# Bipolar (BJT) Single Transistor, NPN, 45 V, 3 A, 5 W, SOT-223, Surface Mount

![Product image](https://novapart.co/image/farnell:2443456/)

**URL**: https://novapart.co/products/BDP947H6327XTSA1/bipolar-bjt-single-transistor-npn-45-v-3-a-5-w-sot
**SKU**: BDP947H6327XTSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.2380
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation Pd:5W; DC Collector Current:3A; DC Current Gain hFE:50hFE; Transi

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 5W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 100MHz |
| Transistor Case Style | SOT-223 |
| Dc Current Gain Hfe Min | 50hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 3A |
| Collector Emitter Voltage Max | 45V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2443456/)

**BDP947_BDP949_BDP953** 

## **Silicon NPN Transistors** 

- For AF driver and output stages 

- High collector current 

- High current gain 

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4 3<br>2<br>1<br>**----- End of picture text -----**<br>


- Low collector-emitter saturation voltage 

- Complementary types: BDP948, BDP950, 

BDP954 (PNP) 

- Pb-free (RoHS compliant) package 

- Qualified according AEC Q101 

|**Type**|**Marking**|**Pin Configuration**|**Pin Configuration**|**Pin Configuration**|**Pin Configuration**|**Pin Configuration**|**Pin Configuration**|**Package**|
|---|---|---|---|---|---|---|---|---|
|BDP947<br>BDP949<br>BDP953|BDP947<br>BDP949<br>BDP953|1=B<br>1=B<br>1=B|2=C<br>2=C<br>2=C|3=E<br>3=E<br>3=E|4=C<br>4=C<br>4=C|-<br>-<br>-|-<br>-<br>-|SOT223<br>SOT223<br>SOT223|



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**BDP947_BDP949_BDP953** 

## **Maximum Ratings** 

|**Maximum Ratings**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Value**|**Unit**|
|Collector-emitter voltage<br>BDP947<br>BDP949<br>BDP953|_V_CEO|45<br>60<br>100|V|
|Collector-base voltage<br>BDP947<br>BDP949<br>BDP953|_V_CBO|45<br>60<br>120||
|Emitter-base voltage|_V_EBO|5||
|Collector current|_I_C|3|A|
|Peak collector current, _t_p ≤10 ms|_I_CM|5||
|Base current|_I_B|200|mA|
|Peak base current,_t_p ≤10 ms|_I_BM|500||
|Total power dissipation-<br>_T_S ≤100 °C|_P_tot|5|W|
|Junction temperature|_T_j|150|°C|
|Storage temperature|_T_stg|-65 ... 150||



|**Thermal Resistance**|**Thermal Resistance**|**Thermal Resistance**|**Thermal Resistance**|
|---|---|---|---|
|**Parameter**|**Symbol**|**Value**|**Unit**|
|Junction - soldering point1)|_R_thJS|≤10|K/W|



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**BDP947_BDP949_BDP953** 

## **Electrical Characteristics** at _T_ A = 25°C, unless otherwise specified 

|**Electrical Characteristics**at_T_A= 25°C, unless o|therwise s|pecified|pecified|pecified||
|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|
|||**min.**|**typ.**|**max.**||
|**DC Characteristics**||||||
|Collector-emitter breakdown voltage<br>_I_C= 10 mA,_I_B= 0 , BDP947<br>_I_C= 10 mA,_I_B= 0 , BDP949<br>_I_C= 10 mA,_I_B= 0 , BDP953|_V_(BR)CEO|45<br>60<br>100|-<br>-<br>-|-<br>-<br>-|V|
|Collector-base breakdown voltage<br>_I_C= 100 µA,_I_E= 0 , BDP947<br>_I_C= 100 µA,_I_E= 0 , BDP949<br>_I_C= 0 ,_I_E= 100 µA, BDP953|_V_(BR)CBO|45<br>60<br>120|-<br>-<br>-|-<br>-<br>-||
|Emitter-base breakdown voltage<br>_I_E= 10 µA,_I_C= 0|_V_(BR)EBO|5|-|-||
|Collector-base cutoff current<br>_V_CB= 45 V,_I_E= 0<br>_V_CB= 45 V,_I_E= 0 ,_T_A= 150 °C|_I_CBO|-<br>-|-<br>-|0.1<br>20|µA|
|Emitter-base cutoff current<br>_V_EB= 4 V,_I_C= 0|_I_EBO|-|-|100|nA|
|DC current gain2)<br>_I_C= 10 mA,_V_CE= 5 V<br>_I_C= 500 mA,_V_CE= 1 V<br>_I_C= 2 A,_V_CE= 2 V, BDP947, BDP949<br>_I_C= 2 A,_V_CE= 2 V, BDP953|_h_FE|25<br>100<br>50<br>15|-<br>-<br>-<br>-|-<br>475<br>-<br>-|-|
|Collector-emitter saturation voltage2)<br>_I_C= 2 A,_I_B= 0.2 A|_V_CEsat|-|-|0.5|V|
|Base emitter saturation voltage2)<br>_I_C= 2 A,_I_B= 0.2 A|_V_BEsat|-|-|1.3||
|||||||
|**AC Characteristics**||||||
|Transition frequency<br>_I_C= 50 mA,_V_CE= 10 V,_f_= 100 MHz|_f_T|-|100|-|MHz|
|Collector-base capacitance<br>_V_CB= 10 V,_f_= 1 MHz|_C_cb|-|25|-|pF|



> 1For calculation of _R_ thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 

2Pulse test: t < 300µs; D < 2% 

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**DC current gain** _h_ FE =  ƒ( _I_ C) _V_ = 2 V CE 

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10 3<br>100°C<br>-<br>25°C<br>10 2  -55°C<br>10 1<br>10 0<br>10  [0 ] 10  [1 ] 10  [2 ] 10  [3 ] mA 10  [4 ]<br>I C<br>FE<br>h<br>**----- End of picture text -----**<br>


## **Base-emitter saturation voltage** 

_I_ C =  ( _V_ BEsat), _h_ FE = 10 

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10 4<br>mA<br>10 3<br>-50°C<br>25°C<br>100°C<br>10 2<br>10 1<br>10 0<br>0 0.2 0.4 0.6 0.8 1 V 1.3<br>V BEsat<br>I C<br>**----- End of picture text -----**<br>


**Collector-emitter saturation voltage** _I_ C = ƒ( _V_ CEsat), _h_ FE = 10 

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10 4<br>mA<br>10 3<br>100°C<br>25°C<br>10 2  -50°C<br>10 1<br>10 0<br>0 0.1 0.2 0.3 0.4 V 0.6<br>V CEsat<br>I C<br>**----- End of picture text -----**<br>


**Collector current** _I_ C =  ƒ( _V_ BE) _V_ = 2 V CE 

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10 4<br>mA<br>10 3<br>-50°C<br>25°C<br>100°C<br>10 2<br>10 1<br>10 0<br>0 0.2 0.4 0.6 0.8 1 V 1.3<br>V BE<br>I C<br>**----- End of picture text -----**<br>


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**BDP947_BDP949_BDP953** 

**Collector cutoff current** _I_ CBO =  ƒ( _T_ A) _V_ CB = 45 V 

**Collector-base capacitance** _C_ cb = ƒ( _V_ CB) **Emitter-base capacitance** _C_ eb = ƒ( _V_ EB) 

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10 5  500<br>nA<br>pF<br>10 4<br>400<br>10 3  350<br>300<br>max<br>10 2  250<br>CEB<br>200<br>10 1<br>150<br>typ<br>10 0  100<br>50<br>CCB<br>10 -1  0<br>0 20 40 60 80 100 120 °C 150 0 4 8 12 16 V 22<br>T A V CB( V EB<br>)<br>EB<br>C<br>(<br>I CB0 C CB<br>**----- End of picture text -----**<br>


**Total power dissipation** _P_ tot = ƒ( _T_ S) 

**Permissible Pulse Load** _R_ thJS =  ƒ( _t_ p) 

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5.5<br>W<br>4.5<br>4<br>3.5<br>3<br>2.5<br>2<br>1.5<br>1<br>0.5<br>0<br>0 15 30 45 60 75 90 105 120 °C 150<br>ts<br>tot<br>P<br>**----- End of picture text -----**<br>


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10 2<br>10 1<br>D = 0,5<br>0,2<br>0,1<br>10 0  0,05<br>0,02<br>0,01<br>0,005<br>0<br>10 -1<br>10  [-6 ] 10  [-5 ] 10  [-4 ] 10  [-3 ] 10  [-2 ] s 10  [0 ]<br>t<br>p<br>thJS<br>R<br>**----- End of picture text -----**<br>


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**BDP947_BDP949_BDP953** 

## **Permissible Pulse Load** 

_P_ totmax/ _P_ totDC =  ƒ( _t_ p) 

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10 3<br>-<br>D = 0<br>10 2  0.005<br>0.01<br>0.02<br>0.05<br>0.1<br>0.2<br>0.5<br>10 1<br>10 0<br>10  [-6 ] 10  [-5 ] 10  [-4 ] 10  [-3 ] 10  [-2 ] s 10  [0 ]<br>t<br>p<br>totDC<br>P<br>totmax/<br>P<br>**----- End of picture text -----**<br>


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**Package SOT223 BDP947_BDP949_BDP953** 

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Package Outline 6.5 ±0.2 1.6 [±0.1]<br>A<br>3±0.1 0.1 MAX.<br>4 B<br>1 2 3<br>0.7 [±0.1] 2.3<br>4.6<br>0.25 [M] A<br>0.25 [M] B<br>Foot Print<br>3.5<br>1.2 1.1<br>Marking Layout (Example)<br>Manufacturer<br>2005, 24 CW<br>Date code (YYWW)<br>BCP52-16<br>Type code<br>Pin 1<br>Packing<br>Reel ø180 mm = 1.000 Pieces/Reel<br>Reel ø330 mm = 4.000 Pieces/Reel<br>8 0.3 MAX.<br>6.8 1.75<br>Pin 1<br>0...10˚<br>0.28±0.04<br>15˚ MAX.<br>±0.2<br>±0.3<br>7 3.5<br>0.5 MIN.<br>1.4<br>4.8<br>1.4<br>55 12<br>7.<br>**----- End of picture text -----**<br>


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## **Edition 2009-11-16** 

**Published by Infineon Technologies AG 81726 Munich, Germany** 

##  **2009 Infineon Technologies AG All Rights Reserved.** 

## **Legal Disclaimer** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 

## **Information** 

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). 

## **Warnings** 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. 

Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

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