# Bipolar (BJT) Single Transistor, General Purpose, PNP, 100 V, 15 A, 90 W, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:1084576/)

**URL**: https://novapart.co/products/BD912/bipolar-bjt-single-transistor-general-purpose-pnp
**SKU**: BD912
**Manufacturer**: STMICROELECTRONICS
**Price**: €0.5060
**Stock**: 1000+
**Lead Time**: 113 days (indicative)

## Description

Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:3MHz; Power Dissipation Pd:90W; DC Collector Current:15A; DC Current Gain hFE:40hFE; Transistor Case Styl

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 90W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | PNP |
| Transition Frequency | 3MHz |
| Transistor Case Style | TO-220AB |
| Dc Current Gain Hfe Min | 40hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 15A |
| Collector Emitter Voltage Max | 100V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1084576/)

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## **BD909/911 BD910/912** 

## COMPLEMENTARY SILICON POWER TRANSISTORS 

## I STMicroelectronics PREFERRED SALESTYPES 

## **DESCRIPTION** 

The BD909 and BD911 are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. 

The complementary PNP types are BD910 and BD912 respectively. 

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## **INTERNAL  SCHEMATIC  DIAGRAM** 

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## **ABSOLUTE  MAXIMUM  RATINGS** 

|**Symbol**|**Parameter**||**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|
|||**NPN**|**BD909**|**BD911**||
|||**PNP**|**BD910**|**BD912**||
|VCBO|Collector-Base Voltage(IE= 0)||80|100|V|
|VCEO|Collector-Emitter Voltage(IB= 0)||80|100|V|
|VEBO|Emitter-Base Voltage(IC= 0)||5||V|
|IE,IC|Collector Current||15||A|
|IB|Base Current||5||A|
|Ptot|Total Dissipation at Tc ≤25 oC||90||W|
|Tstg|Storage Temperature||-65 to 150||oC|
|Tj|Max. Operating Junction Temperature||150||oC|



For PNP types voltage and current values are negative. 

1/6 

October 1999 

**BD909 / BD910 / BD911 / BD912** 

## **THERMAL  DATA** 

Rthj-case Thermal  Resistance  Junction-case                                Max 1.4 oC/W 

## **ELECTRICAL  CHARACTERISTICS** (Tcase = 25[o] C unless otherwise specified) 

|**ELECTRICAL  CHARACTERISTICS**|**ELECTRICAL  CHARACTERISTICS**|**ELECTRICAL  CHARACTERISTICS**(Tcase = 25case = 25= 25[o]C unless otherwise specified)|C unless otherwise specified)||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|ICBO|Collector Cut-off<br>Current (IE= 0)|for**BD909/910**VCB= 80 V<br>for**BD911/912**VCB= 100 V<br>Tcase= 150oC<br>for**BD909/910**VCB= 80 V<br>for**BD911/912**VCB= 100 V|||500<br>500<br>5<br>5|µA<br>µA<br>mA<br>mA|
|ICEO|Collector Cut-off<br>Current (IB= 0)|for**BD909/910**VCE= 40 V<br>for**BD911/912**VCE= 50 V|||1<br>1|mA<br>mA|
|IEBO|Emitter Cut-off Current<br>(IC= 0)|VEB= 5 V|||1|mA|
|VCEO(sus)∗|Collector-Emitter<br>Sustaining Voltage<br> (IB= 0)|IC= 100 mA           for**BD909/910**<br> for**BD911/912**|80<br>100|||V<br>V|
|VCE(sat)∗|Collector-Emitter<br>Saturation Voltage|IC= 5 A                  IB= 0.5 A<br>IC= 10 A                IB= 2.5 A|||1<br>3|V<br>V|
|VBE(sat)∗|Base-Emitter<br>Saturation Voltage|IC= 10 A                IB= 2.5 A|||2.5|V|
|VBE∗|Base-Emitter Voltage|IC= 5 A                  VCE= 4 V|||1.5|V|
|hFE∗|DC Current Gain|IC= 0.5 A               VCE= 4 V<br>IC= 5 A                  VCE= 4 V<br>IC= 10 A                VCE= 4 V|40<br>15<br>5||250<br>150||
|fT|Transition frequency|IC= 0.5 A               VCE= 4 V|3|||MHz|



∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 

For PNP types voltage and current values are negative. 

## Safe Operating Area 

## Derating Curves 

2/6 

**BD909 / BD910 / BD911 / BD912** 

DC Current Gain (NPN type) 

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DC Transconductance (NPN type) 

Collector-Emitter Saturation Voltage (NPN type) 

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DC Current Gain (PNP type) 

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DC Transconductance (PNP type) 

Collector-Emitter Saturation Voltage (PNP type) 

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3/6 

**BD909 / BD910 / BD911 / BD912** 

Base-Emitter Saturation Voltage (NPN type) 

Transition Frequency (NPN type) 

Base-Emitter Saturation Voltage (PNP type) 

Transition Frequency (PNP type) 

4/6 

**BD909 / BD910 / BD911 / BD912** 

## **TO-220 MECHANICAL DATA** 

|**DIM.**|**mm**|**mm**|**mm**|**inch**|**inch**|**inch**|
|---|---|---|---|---|---|---|
||**MIN.**|**TYP.**|**MAX.**|**MIN.**|**TYP.**|**MAX.**|
|A|4.40||4.60|0.173||0.181|
|C|1.23||1.32|0.048||0.051|
|D|2.40||2.72|0.094||0.107|
|D1||1.27|||0.050||
|E|0.49||0.70|0.019||0.027|
|F|0.61||0.88|0.024||0.034|
|F1|1.14||1.70|0.044||0.067|
|F2|1.14||1.70|0.044||0.067|
|G|4.95||5.15|0.194||0.203|
|G1|2.4||2.7|0.094||0.106|
|H2|10.0||10.40|0.393||0.409|
|L2||16.4|||0.645||
|L4|13.0||14.0|0.511||0.551|
|L5|2.65||2.95|0.104||0.116|
|L6|15.25||15.75|0.600||0.620|
|L7|6.2||6.6|0.244||0.260|
|L9|3.5||3.93|0.137||0.154|
|DIA.|3.75||3.85|0.147||0.151|



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5/6 

**BD909 / BD910 / BD911 / BD912** 

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 

- © 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES 

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**http://www.st.com** 

. 

6/6 



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