# Bipolar (BJT) Single Transistor, General Purpose, PNP, 60 V, 4 A, 15 W, TO-225, Through Hole ![Product image](https://novapart.co/image/farnell:2101814/) **URL**: https://novapart.co/products/BD788G/bipolar-bjt-single-transistor-general-purpose-pnp **SKU**: BD788G **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.2920 **Stock**: 10+ ## Specifications | Parameter | Value | |---|---| | No. Of Pins | 3Pins | | Power Dissipation | 15W | | Dc Current Gain Hfe | 40hFE | | Transistor Mounting | Through Hole | | Transistor Polarity | PNP | | Transition Frequency | 50MHz | | Transistor Case Style | TO-225 | | Dc Current Gain Hfe Min | 40hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 4A | | Collector Emitter Voltage Max | 60V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2101814/) ## BD787G (NPN), ## Complementary Plastic Silicon Power Transistors These devices are designed for lower power audio amplifier and low current, high−speed switching applications. ## **http://onsemi.com** ## **Features** **4 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON** - Low Collector−Emitter Sustaining Voltage - High Current−Gain − Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant* **60 VOLTS, 15 WATTS MAXIMUM RATINGS Rating Symbol Value Unit PNP NPN** Collector−Emitter Voltage VCEO 60 Vdc COLLECTOR 2, 4 COLLECTOR 2, 4 Collector−Base Voltage VCBO 80 Vdc Emitter Base Voltage VEBO 6.0 Vdc 3 3 Collector Current − Continuous IC 4.0 Adc BASE BASE Collector Current − Peak ICM 8.0 Adc EMITTER 1 EMITTER 1 Base Current − Continuous IB 1.0 Adc Total Power Dissipation PD @ TC = 25 C 15 W Derate above 25 C 0.12 mW/ C Operating and Storage Junction TJ, Tstg –65 to +150 C **TO−225** ~~=e4~~ Temperature Range **CASE 77−09** Stresses exceeding those listed in the Maximum Ratings table may damage the ~~pf tt~~ **STYLE 1** device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1 2 3 |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Max**|**Unit**| |Thermal Resistance, Junction−to−Case|R JC|8.34|C/W| ## **MARKING DIAGRAM** YWW BD78xG Y = Year WW = Work Week BD78x = Device Code x = 7 or 8 G = Pb−Free Package **ORDERING INFORMATION Device Package Shipping** BD787G TO−225 500 Units/Box (Pb−Free) *For additional information on our Pb−Free strategy and soldering details, please BD788G TO−225 500 Units/Box download the ON Semiconductor Soldering and Mounting Techniques (Pb−Free) Reference Manual, SOLDERRM/D. Publication Order Number: **BD787/D** **1** © Semiconductor Components Industries, LLC, 2013 **December, 2013 − Rev. 13** ## **BD787G (NPN), BD788G (PNP)** ## **ELECTRICAL CHARACTERISTICS*** (TC = 25 � C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS***(TC= 25�C unless otherwise noted|)|||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||| |Collector−Emitter Sustaining Voltage (Note 1)
(IC= 10 mAdc, IB= 0)|VCEO(sus)|60|−|Vdc| |Collector Cutoff Current
(VCE= 20 Vdc, IB= 0)
(VCE= 30 Vdc, IB= 0)|ICEO|−|100|�Adc| |Collector Cutoff Current
(VCE= 80 Vdc, VBE(off)= 1.5 Vdc)
(VCE= 40 Vdc, VBE(off)= 1.5 Vdc, TC= 125°C)|ICEX|−
−|1.0
0.1|�Adc
mAdc| |Emitter Cutoff Current
(VEB= 6.0 Vdc, IC= 0)|IEBO|−|1.0|�Adc| |**ON CHARACTERISTICS**(Note 1)||||| |DC Current Gain
(IC= 200 mAdc, VCE= 3.0 Vdc)
(IC= 1.0 Adc, VCE= 3.0 Vdc)
(IC= 2.0 Adc, VCE= 3.0 Vdc)
(IC= 4.0 Adc, VCE= 3.0 Vdc)|hFE|40
25
20
5.0|250
−
−
−|−| |Collector−Emitter Saturation Voltage
(IC= 500 mAdc, IB= 50 mAdc)
(IC= 1.0 Adc, IB= 100 mAdc)
(IC= 2.0 Adc, IB= 200 mAdc)
(IC= 4.0 Adc, IB= 800 mAdc)|VCE(sat)|−
−
−
−|0.4
0.6
0.8
2.5|Vdc| |Base−Emitter Saturation Voltage
(IC= 2.0 Adc, IB= 200 mAdc)|VBE(sat)|−|2.0|Vdc| |Base−Emitter On Voltage
(IC= 2.0 Adc, VCE= 3.0 Vdc)|VBE(on)|−|1.8|Vdc| |**DYNAMIC CHARACTERISTICS**||||| |Current−Gain − Bandwidth Product
(IC= 100 mAdc, VCE= 10 Vdc, f = 10 MHz)|fT|50|−|MHz| |Output Capacitance
(VCB= 10 Vdc, IC= 0)
BD787G
(f = 0.1 MHz)
BD788G|Cob|−
−|50
70|pF| |Small−Signal Current Gain
(IC= 200 mAdc, VCE= 10 Vdc, f = 1.0 kHz)|hfe|10|−|−| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Indicates JEDEC Registered Data 1. Pulse Test; Pulse Width ≤ 300 � s, Duty Cycle ≤ 2.0%. **http://onsemi.com** **2** **BD787G (NPN), BD788G (PNP)** **==> picture [490 x 645] intentionally omitted <==** **----- Start of picture text -----**
16 1.6
12 1.2
8.0 0.8
4.0 0.4
0 0
20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)
Figure 1. Power Derating
+ 30 V 500
VCC 300 VCC = 30 V
25 �s RC 200 IC/IB = 10
+ 11 V SCOPE TJ = 25°C
0 RB 100 tr
70
- 9.0 V 50
51 D1
DUTY CYCLE = 1.0%tr, tf � 10 ns - 4 V 3020 td @ VBE(off) = 5.0 V
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
10 BD787 (NPN)
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB � 100 mA 5.07.0 BD788 (PNP)
MSD6100 USED BELOW IB � 100 mA 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0
FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES. IC, COLLECTOR CURRENT (AMP)
Figure 2. Switching Time Test Circuit Figure 3. Turn−On Time
1.0
0.7 D = 0.5
0.5
0.3 0.2
0.2 0.1
0.1 0.05 P(pk) R�JC(t) = r(t) R�JC
0.07 R�JC = 8.34 ° C/W MAX
0.05 0.02 D CURVES APPLY FOR POWER
t 1 PULSE TRAIN SHOWN
0.03 0.01 t 2 READ TIME AT t1
0.02 0 (SINGLE PULSE) DUTY CYCLE, D = t 1 /t 2 T J(pk) - T C = P (pk) R �JC(t)
0.01
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
t, TIME (ms)
Figure 4. Thermal Response
TA
TC
PD, POWER DISSIPATION (WATTS)
PD, POWER DISSIPATION (WATTS)
t, TIME (ns)
(NORMALIZED)
r(t), TRANSIENT THERMAL RESISTANCE
**----- End of picture text -----**
**http://onsemi.com** **3** ## **BD787G (NPN), BD788G (PNP)** **==> picture [491 x 652] intentionally omitted <==** **----- Start of picture text -----**
10 There are two limitations on the power handling ability of
1.0 ms 100 �s a transistor: average junction temperature and second
5.0
500 �s breakdown. Safe operating area curves indicate IC − VCEC − VCE− VCECE
5.0 ms limits of the transistor that must be observed for reliable
2.0
TJ = 150°C dc operation, i.e., the transistor must not be subjected to greater
1.0 dissipation than the curves indicate.
0.5 BONDING WIRE LIMITEDTHERMALLY LIMITED @ TC = 25°C variable depending on conditions. Second breakdown pulseThe data of Figure 5 is based on TJ(pk) = 150�C: TC isThe data of Figure 5 is based on TJ(pk) = 150�C: TC isJ(pk) = 150�C: TC is = 150�C: TC is�C: TC isC: TC isC is is
0.050.1 CURVES APPLY BELOW RATED V�(SINGLE PULSE)SECOND BREAKDOWN LIMITEDCEO limits are valid for duty cycles to 10% provided T≤At high case temperatures, thermal limitations will reduce 150�C, TJ(pk) may be calculated from the data in Figure 4.J(pk)≤At high case temperatures, thermal limitations will reduce 150�C, TJ(pk) may be calculated from the data in Figure 4.J(pk)At high case temperatures, thermal limitations will reduce 150�C, TJ(pk) may be calculated from the data in Figure 4.J(pk)
0.02
BD787 (NPN) BD788 (PNP) 60 V the power that can be handled to values less than the
0.011.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 limitations imposed by second breakdown.
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active Region Safe Operating Area
2000 200
VCC = 30 V TJ = 25°C
1000 ts IC/IB = 10
700 IB1 = IB2 100
500 TJ = 25°C Cib
70
300
50
200
100 tf 30 Cob
70
20
50
(NPN) (NPN)
30 (PNP) (PNP)
20 10
0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (AMP) VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Turn−Off Time Figure 7. Capacitance
NPN NPN
BD787 BD788
400 200
300 TJ = 150°C VCE = 1.0 V V CE = 1.0 V
VCE = 3.0 V TJ = 150°C VCE = 3.0 V
200 25°C 100
70 25 ° C
-�55°C
100 50
70 -�55°C
30
50
20
30
20 10
0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
t, TIME (ns)
C, CAPACITANCE (pF)
hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN
**----- End of picture text -----**
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCEC − VCE− VCECE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. variable depending on conditions. Second breakdown pulseThe data of Figure 5 is based on TJ(pk) = 150�C: TC isThe data of Figure 5 is based on TJ(pk) = 150�C: TC isJ(pk) = 150�C: TC is = 150�C: TC is�C: TC isC: TC isC is is 150�C, TJ(pk) may be calculated from the data in Figure 4.J(pk)�C, TJ(pk) may be calculated from the data in Figure 4.J(pk)C, TJ(pk) may be calculated from the data in Figure 4.J(pk)J(pk) may be calculated from the data in Figure 4.J(pk) may be calculated from the data in Figure 4.J(pk)J(pk) limits are valid for duty cycles to 10% provided T≤At high case temperatures, thermal limitations will reduce 150�C, TJ(pk) may be calculated from the data in Figure 4.J(pk)≤At high case temperatures, thermal limitations will reduce 150�C, TJ(pk) may be calculated from the data in Figure 4.J(pk)At high case temperatures, thermal limitations will reduce 150�C, TJ(pk) may be calculated from the data in Figure 4.J(pk) the power that can be handled to values less than the limitations imposed by second breakdown. **Figure 8. DC Current Gain** **http://onsemi.com** **4** **BD787G (NPN), BD788G (PNP)** **==> picture [489 x 417] intentionally omitted <==** **----- Start of picture text -----**
2.0 2.0
TJ = 25°C TJ = 25°C
1.6 1.6
1.2 1.2
VBE(sat) @ IC/IB = 10 VBE(sat) @ IC/IB = 10
0.8 0.8
VBE(on) @ VCE = 3.0 V VBE @ VCE = 3.0 V
0.4 0.4
VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10
0 0
0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 9. “On” Voltages
+�2.5 +�2.5
+�2.0 *APPLIES FOR IC/IB ≤ hFE/3 +�2.0 *APPLIES FOR IC/IB ≤ hFE/3
+�1.5 +�1.5
+�1.0+�0.5 *�VC FOR VCE(sat) 25°C to 150°C +�1.0+�0.5 *�VC FOR VCE(sat) 25°C to 150°C
0 0 - 55°C to 25°C
- 55°C to 25°C
-�0.5 -�0.5
-�1.0 -�1.0 25°C to 150°C
25°C to 150°C
-�1.5 �VB FOR VBE -�1.5 �VB FOR VBE
-�2.0 - 55°C to 25°C -�2.0 - 55°C to 25°C
-�2.5 -�2.5
0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS)
C)° C)°
V, TEMPERATURE COEFFICIENTS (mV/ V, TEMPERATURE COEFFICIENTS (mV/
θ θ
**----- End of picture text -----**
**Figure 10. Temperature Coefficients** **http://onsemi.com 5** **==> picture [472 x 451] intentionally omitted <==** **----- Start of picture text -----**
BD787G (NPN), BD788G (PNP)
PACKAGE DIMENSIONS
TO−225
CASE 77−09
4 ISSUE AC
1 3
2 3 2 1
FRONT VIEW BACK VIEW
E NOTES:
1. DIMENSIONING AND TOLERANCING PER
A1 ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
Q A 3. NUMBER AND SHAPE OF LUGS OPTIONAL.
PIN 4 MILLIMETERS
BACKSIDE TAB DIM MIN MAX
A 2.40 3.00
A1 1.00 1.50
b 0.60 0.90
D b2 0.51 0.88
P c 0.39 0.63
D 10.60 11.10
E 7.40 7.80
1 2 3
e 2.04 2.54
L 14.50 16.63
L1 1.27 2.54
P 2.90 3.30
L1 Q 3.80 4.20
STYLE 1:
L PIN 1.2., 4. EMITTERCOLLECTOR
3. BASE
Oh#
2X b2
2X e
| b c a l
FRONT VIEW SIDE VIEW
**----- End of picture text -----**
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