# Bipolar (BJT) Single Transistor, NPN, 80 V, 4 A, 36 W, TO-126, Through Hole
**URL**: https://novapart.co/products/BD441/bipolar-bjt-single-transistor-npn-80-v-4-a-36-w-to
**SKU**: BD441
**Manufacturer**: MULTICOMP
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.5660
**Stock**: 200+
**Lead Time**: 2 days (indicative)
## Description
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:3MHz; Power Dissipation Pd:36W; DC Collector Current:4A; DC Current Gain hFE:15hFE; Transistor Case St
## Specifications
| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (23-Jan-2024) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 36W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | NPN |
| Transition Frequency | 3MHz |
| Transistor Case Style | TO-126 |
| Dc Current Gain Hfe Min | 15hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 4A |
| Collector Emitter Voltage Max | 80V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:1862504/)
## **Bipolar Transistor**
## **Description:**
This TO-126 plastic silicon epitaxial base NPN power transistor intended for use in power linear and switching applications.
**==> picture [55 x 81] intentionally omitted <==**
**----- Start of picture text -----**
Collector
3
2
Base
1
Emitter
**----- End of picture text -----**
## **Absolute Maximum Ratings**
|**Parameter**|**Symbol**|**Rating**|**Unit**|
|---|---|---|---|
|Collector-Emitter Voltage|VCEO|80|V|
|Collector-Base Voltage|VCBO|80||
|Emitter-Base Voltage|VEBO|5||
|Continuous Collector Current|IC|4|A|
|Total Device Dissipation at Tc= 25°C|PD|36|W|
|Operating and Storage
Junction Temperature Range|Tj, Tstg|-65 to +150|°C|
**Electrical Characteristics (Ta = 25°C unless otherwise specified)**
|**Parameter**
**OFF Characteristics**
~~a~~|**Symbol**|**Test Conditions**|**Min.**|**Max.**|**Unit**|
|---|---|---|---|---|---|
|Collector - Emitter Breakdown Voltage|V(BR)CEO|IC=100mA, IB=0|80|-|**V**|
|Collector Cut-Off Current|ICBO|VCB=80V, IB=0|-|100|μA|
||ICES|VCE=80V, VBE=0|-|100||
|Emitter Cut-Off Current|IEBO|VEB=5V, IC=0|-|1|mA|
|**ON Characteristics**||||||
|||VCE=5V, IC=10mA|15|-|-|
|DC Current Gain|hFE|VCE=1V, IC=500mA|40|-|-|
|||VCE=1V, IC=2A|15|-|-|
|Collector - Emitter Saturation Voltage|VCE(sat)|IC=2A, IB=0.2A|-|0.8|V|
|Base - Emitter On Voltage|VBE(on)|IC=2A, VCE=1V||1.5||
|**Small-Signal Characteristics**||||||
|Current Gain-Bandwidth Product
~~a~~|fT|VCE=1V, IC=250mA|3|-|MHz|
Note 1. Pulse Test: Pulse Width % 300μs, Duty Cycle % 2%. Note 2. fT is defined as the frequency at which |hfe| extrapolates to unity.
www.element14.com www.farnell.com www.newark.com
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23/04/13 V1.0
## **Bipolar Transistor**
**Dimensions Min. Max.** A 10.8 11.05 B 7.49 7.75 C 2.41 2.67 D 0.51 0.66 ~~—~~ er! ~~FE~~ F 2.92 3.18 G 2.31 2.46 ~~—~~ H 1.27 2.41 J 0.38 0.64 Mit ~~+~~ K 15.11 16.64 K ~~rra~~ M 3° Typical Q 3.76 4.01 ~~ee~~ R 1.14 1.4 | ~~—~~ S ~~a~~ 0.64 0.89 U 3.68 3.94 V 1.02 - Ee ~~oe~~ Dimensions : Millimetres **Pin Configuration:** 1. Emitter
Dimensions : Millimetres
2. Base
3. Collector
## **Part Number Table**
**Description Part Number** Transistor, NPN, 4A, 80V, TO-126 BD441 ~~———~~
**Important Notice :** This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.
www.element14.com www.farnell.com www.newark.com
23/04/13 V1.0
Page <2>
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- [Supplier page](https://es.farnell.com/multicomp/bd441/transistor-npn-4a-80v-to126/dp/1862504)
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