# Bipolar (BJT) Single Transistor, PNP, 45 V, 4 A, 36 W, TO-126, Through Hole

![Product image](https://novapart.co/image/farnell:3615304/)

**URL**: https://novapart.co/products/BD438STU/bipolar-bjt-single-transistor-pnp-45-v-4-a-36-w-to
**SKU**: BD438STU
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.2700
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (15-Jan-2018) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 36W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | PNP |
| Transition Frequency | 3MHz |
| Transistor Case Style | TO-126 |
| Dc Current Gain Hfe Min | 30hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 4A |
| Collector Emitter Voltage Max | 45V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3615304/)

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## Plastic Medium Power Silicon PNP Transistor 

## **4.0 AMP POWER TRANSISTORS PNP SILICON** 

BD436G, BD438G, BD440G, COLLECTOR 2, 4 BD442G BASE 3 This series of plastic, medium−power silicon PNP transistors can be used for for amplifier and switching applications. Complementary EMITTER 1 types are BD437 and BD441. ~~8~~ **Features**  These Devices are Pb−Free and are RoHS Compliant* **TO−225 MAXIMUM RATINGS CASE 77−09 STYLE 1 Rating Symbol Value Unit** Collector−Emitter Voltage VCEO Vdc 1 2 3 BD436G 32 BD438G 45 BD440G 60 **MARKING DIAGRAM** BD442G 80 Collector−Base Voltage VCBO Vdc BD436G 32 YWW BD438G 45 BD4xxG BD440G 60 BD442G 80 Emitter−Base Voltage VEBO 5.0 Vdc Y = Year WW = Work Week Collector Current IC 4.0 Adc BD4xx = Device Code Base Current IB 1.0 Adc xx = 36, 36T, 38, 38T, 40, 42 G = Pb−Free Package Total Device Dissipation PD @ TDerate above 25C = 25C C 28836 W/WC **ORDERING INFORMATION** Operating and Storage Junction TJ, Tstg –55 to +150 C **Device Package Shipping** Temperature Range BD442G TO−225 500 Units/Box ~~a FT~~ (Pb−Free) Stresses exceeding those listed in the Maximum Ratings table may damage the ~~a~~ device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. **DISCONTINUED** (Note 1) BD436G 500 Units/Box **THERMAL CHARACTERISTICS** BD436TG 50 Units/Rail **Characteristic Symbol Max Unit** TO−225 BD438G 500 Units/Box Thermal Resistance, Junction−to−Case R JC 3.5 C/W BD438TG (Pb−Free) 50 Units/Rail BD440G 500 Units/Box ~~==~~ 1. **DISCONTINUED:** These devices are not recommended for new design. Please contact your **onsemi** representative for information. The most current information on these devices may be available on www.onsemi.com. 

> *For additional information on our Pb−Free strategy  and soldering details, please download the **onsemi** Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Publication Order Number: **BD438/D** 

**1** 

 Semiconductor Components Industries, LLC, 2013 **August, 2024 − Rev. 17** 

## **BD436G, BD438G, BD440G, BD442G** 

**ELECTRICAL CHARACTERISTICS** (TC = 25C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TC = 25C unless otherwise noted)C = 25C unless otherwise noted)= 25C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)|(TC = 25C unless otherwise noted)C = 25C unless otherwise noted)= 25C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)|||||
|---|---|---|---|---|---|
|**Characteristic**<br>~~UTE~~|**Symbol**<br>~~UTE~~|**Min**<br>~~UTE~~|**Typ**<br>~~UTE~~|**Max**<br>~~UTE~~|**Unit**<br>~~UTE~~|
|Collector−Emitter Breakdown Voltage<br>(IC= 100 mA, IB= 0)<br>BD436G<br>BD438G<br>BD440G<br>BD442G<br>~~UTE~~|V(BR)CEO<br>~~UTE~~|32<br>45<br>60<br>80<br>~~UTE~~|−<br>−<br>−<br>−<br>~~UTE~~|−<br>−<br>−<br>−<br>~~UTE~~|Vdc<br>~~UTE~~|
|Collector−Base Breakdown Voltage<br>(IC= 100 A, IB= 0)<br>BD436G<br>BD438G<br>BD440G<br>BD442G|V(BR)CBO|32<br>45<br>60<br>80|−<br>−<br>−<br>−|−<br>−<br>−<br>−|Vdc|
|Emitter−Base Breakdown Voltage<br>(IE= 100 A, IC= 0)|V(BR)EBO|5.0|−|−|Vdc|
|Collector Cutoff Current<br>(VCB= 32 V, IE= 0)<br>BD436G<br>(VCB= 45 V, IE= 0)<br>BD438G<br>(VCB= 60 V, IE= 0)<br>BD440G<br>(VCB= 80 V, IE= 0)<br>BD442G|ICBO|−<br>−<br>−<br>−|−<br>−<br>−<br>−|0.1<br>0.1<br>0.1<br>0.1|mAdc|
|Emitter Cutoff Current<br>(VEB= 5.0 V)<br>~~ee~~|IEBO<br>~~ee~~|−<br>~~ee~~|−<br>~~ee~~|1.0<br>~~ee~~|mAdc<br>~~ee~~|
|DC Current Gain<br>(IC= 10 mA, VCE= 5.0 V)<br>BD436G<br>BD438G<br>BD440G<br>BD442G<br>~~ee~~|hFE<br>~~ee~~|40<br>30<br>20<br>15<br>~~ee~~|−<br>−<br>−<br>−<br>~~ee~~|−<br>−<br>−<br>−<br>~~ee~~|−<br>~~ee~~|
|DC Current Gain<br>(IC= 500 mA, VCE= 1.0 V)<br>BD436G<br>BD438G<br>BD440G<br>BD442G|hFE|85<br>85<br>40<br>40|−<br>−<br>−<br>−|475<br>475<br>475<br>475|−|
|DC Current Gain<br>(IC= 2.0 A, VCE= 1.0 V)<br>BD436G<br>BD438G<br>BD440G<br>BD442G|hFE|50<br>40<br>25<br>15|−<br>−<br>−<br>−|−<br>−<br>−<br>−|−|
|Collector Saturation Voltage<br>(IC= 2.0 A, IB= 0.2 A)<br>BD436G<br>(IC= 3.0 A, IB= 0.3 A)<br>BD438G<br>BD440G<br>BD442G|VCE(sat)|−<br>−<br>−<br>−|−<br>−<br>−<br>−|0.5<br>0.7<br>0.8<br>0.8|Vdc|
|Base−Emitter On Voltage<br>(IC= 2.0 A, VCE= 1.0 V)<br>BD436G/BD438G<br>BD440G/BD442G<br>~~FE~~|VBE(ON)<br>~~FE~~<br>~~ee~~|−<br>−<br>~~FE~~<br>~~ee~~|−<br>−<br>~~FE~~<br>~~ee~~|1.1<br>1.5<br>~~FE~~<br>~~ee~~|Vdc<br>~~FE~~<br>~~ee~~|
|Current−Gain − Bandwidth Product<br>(VCE= 1.0 V, IC= 250 mA, f = 1.0 MHz)<br>~~ee~~|fT<br>~~ee~~<br>~~ee~~|3.0<br>~~ee~~<br>~~ee~~|−<br>~~ee~~<br>~~ee~~|−<br>~~ee~~<br>~~ee~~|MHz<br>~~ee~~<br>~~ee~~|



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**BD436G, BD438G, BD440G, BD442G** 

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**----- Start of picture text -----**<br>
2.0 ATee<br>AIee<br>1.6<br>HO IC = 10 mA 100 mA 1.0 A 3.0 A<br>AIee<br>1.2 AI Te<br>0.8 OE A<br>PANT TJ =<br>255C<br>0.4 PNTTANS<br>PORN NE<br>POPUPS SEESSE<br>00.050.070.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500<br>IB, BASE CURRENT (mA)<br>VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br>


**Figure 1. Collector Saturation Region** 

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**----- Start of picture text -----**<br>
200 PTTP<br>Pee<br>ee en ee ee Se eee eee<br>FedTOe Oe On a GORNDis iI =<br>100 PE<br>8060 aPEa Oe eeRENNeeeR Aee<br>40 PERTEEE<br>20 PE<br>PEE TT<br>0 10 2 3 100 1 5<br>IC, COLLECTOR CURRENT (AMP)<br>Figure 2. Current Gain<br>2.0 10<br>TJ = 25C<br>1.6 4.0 5 ms<br>C oo ee ee ee T [| ttt<br>TJ = 150C<br>1.2 A eee dc<br>CE TT SECONDARY BREAKDOWN .<br>PICCATTA 1.0 THERMAL LIMIT TC = 25  C \ENET<br>0.8 il VBE(sat) @ IC/IB = 10 eee Zan BONDING WIRE LIMIT NEFF<br>VBE @ VCE = 2.0 V 0.5 CURVES APPLY BELOW RATED VCEO<br>0.4 BD438<br>VCE(sat) @ IC/IB = 10 BD440<br>He rt Hf ti A N HT<br>BD442<br>0 PO TTT 0.1 LETT EAN]<br>0.005 0.010.02 0.030.05 0.1 0.2 0.3 0.5 1.02.0 3.04.0 1.0 2.0 5.0 10 20 50 100<br>IC, COLLECTOR CURRENT (AMP) VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)<br>hFE, CURRENT GAIN (NORMALIZED)<br>VOLTAGE (VOLTS)<br>IC, COLLECTOR CURRENT (AMP)<br>**----- End of picture text -----**<br>


**Figure 3. “On” Voltage** 

**Figure 4. Active Region Safe Operating Area** 

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**3** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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TO−225<br>CASE 77−09<br>ISSUE AD<br>**----- End of picture text -----**<br>


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4 ISSUE AD<br>DATE 25 MAR 2015<br>1 3<br>2 3 2 1<br>FRONT VIEW BACK VIEW<br>SCALE 1:1<br>E NOTES:<br>1. DIMENSIONING AND TOLERANCING PER<br>A1 ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>Q A 3. NUMBER AND SHAPE OF LUGS OPTIONAL.<br>PIN 4 MILLIMETERS<br>BACKSIDE TAB DIM MIN MAX<br>A 2.40 3.00<br>A1 1.00 1.50<br>b 0.60 0.90<br>D b2 0.51 0.88<br>P c 0.39 0.63<br>D 10.60 11.10<br>E 7.40 7.80<br>1 2 3<br>e 2.04 2.54<br>L 14.50 16.63<br>L1 1.27 2.54<br>P 2.90 3.30<br>L1 Q 3.80 4.20<br>GENERIC<br>L<br>MARKING DIAGRAM*<br>YWW<br>XX<br>XXXXXG<br>2X b2 Y = Year<br>WW = Work Week<br>2X e XXXXX = Device Code<br>b c G = Pb−Free Package<br>FRONT VIEW SIDE VIEW *This information is generic. Please refer to<br>device data sheet for actual part marking.<br>Pb−Free indicator, “G” or microdot “ � ”, may<br>or may not be present. Some products may<br>not follow the Generic Marking.<br>STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5:<br>PIN 1. EMITTER PIN 1. CATHODE PIN 1. BASE PIN 1. ANODE 1 PIN 1. MT 1<br>2., 4. COLLECTOR 2., 4. ANODE 2., 4. COLLECTOR 2., 4. ANODE 2 2., 4. MT 2<br>3. BASE 3. GATE 3. EMITTER 3. GATE 3. GATE<br>STYLE 6: STYLE 7: STYLE 8: STYLE 9: STYLE 10:<br>PIN 1. CATHODE PIN 1. MT 1 PIN 1. SOURCE PIN 1. GATE PIN 1. SOURCE<br>2., 4. GATE 2., 4. GATE 2., 4. GATE 2., 4. DRAIN 2., 4. DRAIN<br>3. ANODE 3. MT 2 3. DRAIN 3. SOURCE 3. GATE<br>**----- End of picture text -----**<br>


DATE 25 MAR 2015 

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Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42049B Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: TO−225 PAGE 1 OF 1<br>**----- End of picture text -----**<br>


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