# Bipolar (BJT) Single Transistor, PNP, 45 V, 4 A, 36 W, TO-126, Through Hole

![Product image](https://novapart.co/image/farnell:1015772/)

**URL**: https://novapart.co/products/BD438/bipolar-bjt-single-transistor-pnp-45-v-4-a-36-w-to
**SKU**: BD438
**Manufacturer**: STMICROELECTRONICS
**Price**: €0.1560
**Stock**: 1000+
**Lead Time**: 113 days (indicative)

## Description

Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:-; Power Dissipation Pd:36W; DC Collector Current:4A; DC Current Gain hFE:130hFE; Transistor Case Style:TO

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 36W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | PNP |
| Transition Frequency | - |
| Transistor Case Style | TO-126 |
| Dc Current Gain Hfe Min | 130hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 4A |
| Collector Emitter Voltage Max | 45V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1015772/)

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## **BD433/5/7 BD434/6/8** 

## COMPLEMENTARY SILICON POWER TRANSISTORS 

- I STMicroelectronics PREFERRED SALESTYPE 

- I COMPLEMENTARY PNP - NPN DEVICES 

## **DESCRIPTION** 

The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in medium power linear and switching applications. 

The BD433 is especially suitable for use in car-radio output stages. 

The complementary PNP types are BD434, BD436, and BD438 respectively. 

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**SOT-32** 

## **INTERNAL  SCHEMATIC  DIAGRAM** 

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## **ABSOLUTE  MAXIMUM  RATINGS** 

|**Symbol**|**Parameter**||**Value**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|---|
|||**NPN**|**BD433**|**BD435**|**BD437**||
|||**PNP**|**BD434**|**BD436**|**BD438**||
|VCBO|Collector-Base Voltage(IE= 0)||22|32|45|V|
|VCES|Collector-Emitter Voltage(VBE= 0)||22|32|45|V|
|VCEO|Collector-Emitter Voltage(IB= 0)||22|32|45|V|
|VEBO|Emitter-Base Voltage(IC= 0)||5|||V|
|IC|Collector Current||4|||A|
|ICM|Collector Peak Current(t≤10 ms)||7|||A|
|IB|Base Current||1|||A|
|Ptot|Total Dissipation at Tc ≤25 oC||36|||W|
|Tstg|Storage Temperature||-65 to 150|||oC|
|Tj|Max. OperatingJunction Temperature||150|||oC|



For PNP types voltage and current values are negative. 

1/4 

February 2003 

**BD433 BD434 BD435 BD436 BD437 BD438** 

## **THERMAL  DATA** 

|Rthj-case<br>Rthj-amb|Thermal  Resistance  Junction-case                          Max<br>Thermal  Resistance  Junction-ambient                     Max|3.5<br>100|oC/W<br>oC/W|
|---|---|---|---|



## **ELECTRICAL  CHARACTERISTICS** (Tcase = 25[o] C unless otherwise specified) 

|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|ICBO|Collector Cut-off<br>Current (IE= 0)|for**BD433/434**VCB= 22 V<br>for**BD435/436**VCB= 32 V<br>for**BD437/438**VCB= 45 V|||100<br>100<br>100|µA<br>µA<br>µA|
|ICES|Collector Cut-off<br>Current (VBE= 0)|for**BD433/434**VCE= 22 V<br>for**BD435/436**VCE= 32 V<br>for**BD437/438**VCE= 45 V|||100<br>100<br>100|µA<br>µA<br>µA|
|IEBO|Emitter Cut-off Current<br>(IC= 0)|VEB= 5 V|||1|mA|
|VCEO(sus)∗|Collector-Emitter<br>Sustaining Voltage<br>(IB= 0)|IC= 100 mA           for**BD433/434**<br>for**BD435/436**<br>for**BD437/438**|22<br>32<br>45|||V<br>V<br>V|
|VCE(sat)∗|Collector-Emitter<br>Saturation Voltage|IC= 2 A                 IB= 0.2 A<br>for**BD433/434**<br>for**BD435/436**<br>for**BD437/438**||0.2<br>0.2<br>0.2|0.5<br>0.5<br>0.6|V<br>V<br>V|
|VBE∗|Base-Emitter Voltage|IC= 10 mA             VCE= 5 V<br>IC= 2 A                  VCE= 1 V<br>for**BD433/434**<br>for**BD435/436**<br>for**BD437/438**||0.58|1.1<br>1.1<br>1.2|V<br>V<br>V<br>V|
|hFE∗|DC Current Gain|IC= 10 mA             VCE= 5 V<br>for**BD433/434**<br>for**BD435/436**<br>for**BD437/438**<br>IC= 500 mA           VCE= 1 V<br>IC= 2 A                 VCE= 1 V<br>for**BD433/434**<br>for**BD435/436**<br>for**BD437/438**|40<br>40<br>30<br>85<br>50<br>50<br>40|130<br>130<br>130<br>140|||
|hFE1/hFE2∗|Matched Pair|IC= 500 mA      VCE= 1 V|||1.4||
|fT|Transition frequency|IC= 250 mA      VCE= 1 V|3|||MHz|



∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 

2/4 

**BD433 BD434 BD435 BD436 BD437 BD438** 

## **SOT-32 (TO-126) MECHANICAL DATA** 

|**DIM.**|**mm**|**mm**|**mm**|**inch**|**inch**|**inch**|
|---|---|---|---|---|---|---|
||**MIN.**|**TYP.**|**MAX.**|**MIN.**|**TYP.**|**MAX.**|
|A|7.4||7.8|0.291||0.307|
|B|10.5||10.8|0.413||0.425|
|b|0.7||0.9|0.028||0.035|
|b1|0.40||0.65|0.015||0.025|
|C|2.4||2.7|0.094||0.106|
|c1|1.0||1.3|0.039||0.051|
|D|15.4||16.0|0.606||0.630|
|e||2.2|||0.087||
|e3||4.4|||0.173||
|F||3.8|||0.150||
|G|3||3.2|0.118||0.126|
|H|||2.54|||0.100|
|H2||2.15|||0.084||
|I||1.27|||0.05||
|O||0.3|||0.011||
|V||10o|||10o||



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0016114/B 

3/4 

**BD433 BD434 BD435 BD436 BD437 BD438** 

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 

- © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES 

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**http://www.st.com** 

4/4 



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- [Supplier page](https://es.farnell.com/stmicroelectronics/bd438/transistor-pnp-to-126/dp/1015772)
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