# Bipolar (BJT) Single Transistor, PNP, 80 V, 3 A, 40 W, TO-220, Through Hole
**URL**: https://novapart.co/products/BD242B/bipolar-bjt-single-transistor-pnp-80-v-3-a-40-w-to
**SKU**: BD242B
**Manufacturer**: STMICROELECTRONICS
**Price**: β¬0.1780
**Stock**: 1000+
**Lead Time**: 71 days (indicative)
## Description
Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:-; Power Dissipation Pd:40W; DC Collector Current:-3A; DC Current Gain hFE:10hFE; Transistor C
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 40W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | PNP |
| Transition Frequency | - |
| Transistor Case Style | TO-220 |
| Dc Current Gain Hfe Min | 10hFE |
| Operating Temperature Max | 150Β°C |
| Continuous Collector Current | 3A |
| Collector Emitter Voltage Max | 80V |
## Datasheet
π [Download PDF](https://novapart.co/datasheet/farnell:2849624/)
## ky, SGS-THOMSON S| | MICROELECTRONICS
## BD241A/B/C BD242A/B/C
## COMPLEMENTARY SILICON POWER TRANSISTORS
Β» SGS-THOMSON PREFERRED SALESTYPES
## DESCRIPTION
The BD241A, BD241B and BD241C are silicon epitaxial-base NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for use in medium power linear and switching applications. The complementary PNP types are BD242A, BD242B and BD242C respectively.
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## INTERNAL SCHEMATIC DIAGRAM
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## ABSOLUTE MAXIMUM RATINGS
Symbol Parameter [NPN | BO241A | BD2416 | BD2MC_ Veen [PNP | BD242A | BD242B | BD242C | | Voeo **|Coll** ector-Emitter VoltageectorBase Voliage (Ree=1000) (Ils=0) |=| 70βSΒ«|| So]| tof}STC SC=~<ββ~*~sβββββββsβsCβCsβββββ*~S*sβββ;7CSβS* picture [447 x 235] intentionally omitted <==**
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|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|IcES|Collector|Cut-off|Voce|=|rated|Vceo|0.2|mA|
|Current|(Vee|=|0)|
|IcEO|Collector|Cut-off|for|BD241A/BD242A|Vce|=30V|0.3|mA|
|Current|(lp|=|0)|for|BD241B/BD242B|Vce|=|60|V|0.3|mA|
|for|BD241C/BD242C|Vce|=60V|0.3|mA|
|lEBO|Emitter|Cut-off|Current||Veg|=|5|V|1|mA|
|(Ic|=|0)|
|VcEo(sus)*||Collector-Emitter|lo|=30|mA|
|Sustaining|Voltage|for|BD241A/BD242A|60|Vv|
|for|BD241B/BD242B|80|Vv|
|for|BD241C/BD242C|100|Vv|
|VeceE\saty*||Collector-Emitter|Ic=3A|Ip=0.6A|1.2|Vv|
|Saturation|Voltage|
|hre*|DC|Current|Gain|Ilc=1A|VcE=4V|25|
|Ic=3A|VcE=4V|10|
|hfe|Small|Signal|Current|Ic=0.5A|VceE=10V|f=|1MHz|
|Gain|Ic|=0.5A|Voce|=10V|f=1KHz|
|*|Pulsed:|Pulse|duration|=|300|us,|duty|cycle|< 2%|
|For|PNP|types|voltage and|current values|are|negative.|
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BD241 A/B/C/BD242A/B/C
## TO-220 MECHANICAL DATA
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BD241 A/B/C/BD242A/B/C
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS- THOMSON Microelectronics. Specifications mentioned in this publication are subjectto change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical compaents in life supportdevices or systems without express written approval of SGS-THOMSON Microelectaics.
Β© 1995 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectrorics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong- Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore- Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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## Links
- [View this product on Novapart](https://novapart.co/products/BD242B/bipolar-bjt-single-transistor-pnp-80-v-3-a-40-w-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/bd242b/transistor-pnp-80v-3a-to-220/dp/2849624)
---
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