# Bipolar (BJT) Single Transistor, NPN, 60 V, 1.5 A, 1.25 W, TO-126, Through Hole

![Product image](https://novapart.co/image/farnell:4343291/)

**URL**: https://novapart.co/products/BD137/bipolar-bjt-single-transistor-npn-60-v-15-a-125-w
**SKU**: BD137
**Manufacturer**: MULTICOMP PRO
**Price**: €0.1110
**Stock**: 1000+
**Lead Time**: 127 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | Multicomp Pro Bipolar Transistor NPN |
| Qualification | - |
| Power Dissipation | 1.25W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | NPN |
| Transition Frequency | - |
| Transistor Case Style | TO-126 |
| Dc Current Gain Hfe Min | 40hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 1.5A |
| Collector Emitter Voltage Max | 60V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4343291/)

## **Single Bipolar Transistor** 

## **Discription** 

Designed for use as Audio Amplifier and Drivers Utilizing 

## **Applications** 

- Driver stages in hi-fi amplifier and television circuit. 

## **Features** 

- This product is available in AEC-Q101 Qualified and PPAP Capable also. 

## **Absolute Maximum Ratings (Ta = 25°C Unless otherwise specified)** 

|**Parameter**<br>~~ee~~<br>~~po~~|**Symbol**<br>~~ee~~<br>~~oo~~|**BD137/BD138**<br>~~ee~~<br>~~oo~~|**BD139/BD140**<br>~~ee~~|**Unit**<br>~~ee~~|
|---|---|---|---|---|
|Collector -Emitter Voltage<br>~~po~~|VCEO<br>~~oo~~|60<br>~~oo~~|80|V<br>~~ee~~|
|Collector -Emitter Voltage(RBE=1kW)<br>~~po~~<br>~~ee~~|VCER<br>~~oo~~||100||
|Collector -Base Voltage<br>~~po~~<br>~~ee~~|VCBO<br>~~oo~~||||
|Emitter Base Voltage<br>~~po~~<br>~~ee~~<br>~~ee~~|VEBO<br>~~oo~~<br>~~ee~~|5<br>~~oo~~<br>~~ee~~|||
|Collector Current|IC|1.5||A<br>~~es~~|
|Collector Peak Current<br>~~a~~|ICM|2|||
|Base Current<br>~~es~~<br>~~————~~|IB<br>~~es~~<br>~~————~~|0.5<br>~~es~~<br>~~————~~|||
|Power Dissipation@Ta=25ºC<br>~~————~~<br>~~pO~~|PD<br>~~————~~<br>~~ee~~<br>~~ee~~<br>|1.25<br>~~————~~<br>~~ee~~||W<br>~~ee~~|
|Derate above 25ºC<br>~~————~~<br>~~pO~~<br>~~po~~||10<br>~~————~~<br>~~ee~~<br>~~ee~~||mW/°C<br>~~ee~~<br>~~ee~~|
|Power Dissipation@Tc=25ºC<br>~~————~~<br>~~pO~~<br>~~po~~<br>~~po~~||12.5<br>~~————~~<br>~~ee~~<br>~~ee~~<br>~~ee~~||W<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|Derate above 25ºC<br>~~————~~<br>~~po~~<br>~~po~~<br>~~ee~~||100<br>~~————~~<br>~~ee~~<br>~~ee~~<br>~~ee~~||mW/°C<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|Power Dissipation@Tc=70ºC<br>~~————~~<br>~~po~~<br>~~ee~~<br>~~a~~||8<br>~~————~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>||W<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|
|Operating And Storage Junction<br>Temperature Range<br>~~————~~<br>~~ee~~<br>~~ee~~<br>~~a~~|TJ, TSTG<br>~~————~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|-55 to +150<br>~~————~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>||°C<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|
|Junction to Ambient in free air<br>~~aee~~|Rth (j-a)<br>~~ee~~<br>~~ee~~|100<br>~~ee~~<br>~~ee~~||°C/W<br>~~ee~~<br>~~ee~~|
|Junction to Case<br>~~aee~~|Rth (j-c)<br>~~ee~~<br>~~ee~~|10<br>~~ee~~<br>~~ee~~|||



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## **Single Bipolar Transistor** 

## **Electrical Characteristics at (Ta = 25°C Unless otherwise specified)** 

|||||~~GO~~||||
|---|---|---|---|---|---|---|---|
|**Parameter**<br>~~GQ~~|**Symbol**<br>~~GQ~~<br>~~es ee~~|**Test Condition**<br>~~GQ~~<br>~~eeee~~||Min.<br>~~GQ~~<br>~~GO~~<br>|Typ.<br>~~GQ~~<br>~~ee~~|Max.<br>~~GQ~~<br>~~ee~~|**Unit**<br>~~GQ~~<br>~~ee~~|
|Collector Emitter Sustaining Voltage<br>~~ee~~|VCEO (sus)1<br>~~ee~~<br>~~es ee~~<br>~~a~~|IC=30mA, IB=0<br>~~ee~~<br>~~ee~~<br>~~ee~~|BD137/BD138<br>~~ee~~<br>~~ee~~<br>~~es~~|40<br>~~GO~~<br>~~ee~~<br>|--<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~|v<br>~~ee~~<br>~~ee~~|
||~~ee~~<br>~~es ee~~<br>~~a~~|~~ee~~<br>~~ee~~<br>~~ee~~|BD139/BD140<br>~~ee~~<br>~~ee~~<br>~~es~~|60<br>~~ee~~<br>|--<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~||
|Collector Cut off Current<br>~~|~~<br>~~es~~|ICBO<br>~~es ee~~<br>~~a~~<br>~~|~~<br>|VCB=30V,<br>~~ee ee ~~<br>~~ee es~~<br>~~|~~<br>||--<br> <br>~~|~~<br>~~es~~<br>|--<br> ~~ee~~<br>~~|~~<br>~~ee~~|0.1<br>~~ee~~<br>~~|~~<br>~~ee~~|V<br>~~ee~~<br>~~|~~|
|||VCB=30V, IE=0, Tc=125ºC<br>~~|~~<br>~~ee~~<br>||--<br>~~|~~<br>~~ee~~<br>~~es~~<br>|--<br>~~|~~<br>~~ee~~<br>~~ee~~|10<br>~~|~~<br>~~ee~~<br>~~ee~~|µA<br>~~|~~<br>~~ee~~|
|Emitter Cut off Current<br>~~es ~~|IEBO<br> ~~OG~~|VEB=5V, IC=0<br>~~OG~~||--<br>~~es~~<br>~~OG~~|--<br>~~ee~~|10<br>~~ee~~|µA|
|DC Current Gain<br>~~es ~~|hFE1<br>|IC=0.005A, VCE=2V<br><br>~~es~~||25<br>~~es ~~<br><br>~~es~~<br>~~es~~|--<br> ~~ee~~<br>~~es~~|--<br>~~ee~~<br>~~es~~|µA<br>~~es~~|
|||IC=0.15A, VCE=2V<br>~~ee~~||40<br>~~ee~~<br>~~es~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~|250<br>~~ee~~<br>~~ee~~|~~ee~~|
|||IC=0.5A, VCE=2V<br>~~ee~~||25<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~<br>~~ee~~|--<br>~~ee~~<br>~~ee~~<br>~~ee~~|~~ee~~|
|DC Current Gain||IC=0.15A, VCE=2V<br>~~GO~~|-6<br>~~ee~~|40<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|--<br> ~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|100<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|~~ee~~|
||||-10<br>~~ee~~|63<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|--<br> ~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|160<br> ~~ee~~<br>~~ee~~<br>~~ee~~|~~ee~~|
||||-16<br>~~ee~~|100<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|--<br> ~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|250<br> ~~ee~~<br>~~ee~~<br>~~ee~~|~~ee~~|
||||-25<br>~~ee~~<br>~~GO~~|160<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~GO~~|--<br> ~~ee~~<br>~~ee~~<br>~~ee~~|400<br>~~ee~~<br>~~ee~~|~~ee~~|
|Collector Emitter Saturation Voltage<br>~~es~~|~~es~~|IC=0.5A, IB=0.05A<br>~~es~~<br>~~GO~~||--<br>~~ee ~~<br>~~es~~<br>~~GO~~<br>~~GO~~|--<br> ~~ee ~~<br>~~es~~<br>~~OO~~|0.5<br> ~~ee~~<br>~~es~~<br>~~OO~~|V<br>~~es~~|
|Base Emitter On Voltage<br>~~GG~~|~~GG~~|IC=0.5A, VCE=2V<br>~~GO~~<br>~~GG~~||--<br>~~GO~~<br>~~GG~~<br>~~GO~~|--<br>~~GG~~<br>~~OO~~|1.0<br>~~GG~~<br>~~OO~~|V<br>~~GG~~|



## Note: 

1. Pulse test:- Pulse width=300µs, duty cycle=2% 

2. For PNP devices voltage and current values will be negative (-) 

## **Typical Characteristics Curves** 

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## **Single Bipolar Transistor** 

TO-126 Leaded Plastic Package 

|**DIM**|**MIN.**|**TYP**|**MAX.**|
|---|---|---|---|
|A|7.4|--|7.8|
|B|10.5||10.8|
|C|2.4||2.7|
|D|0.7||0.9|
|E|--|2.25|--|
|F|0.49|--|0.75|
|G|--|4.5|--|
|L||15.7||
|M||1.27||
|N||3.75||
|P|3|--|3.2|
|S|--|2.5|--|



Dimensions : Millimetres 

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## **Single Bipolar Transistor** 

## **Recommended Reflow Solder Profiles** 

The recommended reflow solder profiles for Pb and Pb-free devices are shown below. Figure 1 shows the recommended solder profile for devices that have Pb-free terminal plating, and where a Pb free solder is used. 

Figure 2 shows the recommended solder profile for devices with Pb-free terminal plating used with leaded solder, or for devices with leaded terminal plating used with a leaded solder. 

## **Reflow profiles in tabular form** 

|**Reflow profiles in tabular form**|||
|---|---|---|
|**Profile Feature**|**Sn-Pb System**|**Pb-Free System**|
|Average Ramp-UpRate|~3°C/second|~3°C/second|
|Preheat<br>– Temperature Range<br>– Time|150-170°C<br>60-180 seconds|150-200°C<br>60-180 seconds|
|Time maintained above:<br>– Temperature<br>– Time|200°C<br>30-50 seconds|217°C<br>60-150 seconds|
|Peak Temperature|235°C|260°C max.|
|Time within +0 -5°C of actual Peak|10 seconds|40 seconds|
|Ramp-Down Rate|3°C/second max.|6°C/second max.|



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## **Single Bipolar Transistor** 

## **Recommended Wave Solder Profiles** 

The Recommended solder Profile For Devices with Pb-free terminal plating where a Pb-free solder is used 

The Recommended solder Profile For Devices with Pb-free terminal plating used with leaded solder, or for devices with leaded terminal platingused with leaded solder 

## **Wave Profiles in Tabular Form** 

|**Wave Profiles in Tabular Form**|||
|---|---|---|
|**Profile Feature**|**Sn-Pb System**|**Pb-Free System**|
|Average Ramp-UpRate|~200°C/second|~200°C/second|
|Heatingrate during preheat|Typical 1-2, Max 4°C/sec|Typical 1-2, Max 4°C/Sec|
|Finalpreheat Temperature|Within 125°C of Solder Temp|Within 125°C of Solder Temp|
|Peak Temperature|235°C|260°C max.|
|Time within +0 -5°C of actual Peak|10 seconds|10 seconds|
|Ramp-Down Rate|5°C/second max.|5°C/second max.|



## **Part Number Table** 

## Dimensions : Millimetres 

|**Part Number Table**||
|---|---|
|**Description**|**Part Number**|
|Single Bipolar Transistor, NPN, 60V, 1500mA, 12.5W, TO-126|BD137|
|Single Bipolar Transistor, NPN, 60V, 1500mA, 12.5W, 10A DC, TO-126|BD137-10|
|Single Bipolar Transistor, NPN, 60V, 1500mA, 12.5W, 16A DC, TO-126|BD137-16|
|Single Bipolar Transistor, PNP, 60V, 1500mA, 12.5W, TO-126|BD138|
|Single Bipolar Transistor, PNP, 60V, 1500mA,12.5W, 10A DC, TO-126|BD138-10|
|Single Bipolar Transistor, PNP, 60V, 1500mA, 12.5W, 16A DC, TO-126|BD138-16|
|Single Bipolar Transistor, NPN, 80V, 1500mA, 12.5W TO-126|BD139|
|Single Bipolar Transistor, NPN, 80V, 1500mA, 12.5W, 16A DC, TO-126|BD139-16|
|Single Bipolar Transistor, PNP, 80V, 1500mA, 12.5W, 16A DC, TO-126|BD140-16|
|Single Bipolar Transistor, PNP, 80V, 1500mA, 12.5W, 25A DC, TO-126|BD140-25|



**Important Notice :** This data sheet and its contents (the “Information”) belong to the members of the AVNET group of companies (the “Group”) or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence. Multicomp Pro is the registered trademark of Premier Farnell Limited 2019. 

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## Links

- [View this product on Novapart](https://novapart.co/products/BD137/bipolar-bjt-single-transistor-npn-60-v-15-a-125-w)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/multicomp-pro/bd137/transistor-npn-60v-1-5a-to-126/dp/4343291)
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