# Bipolar (BJT) Single Transistor, NPN, 45 V, 1.5 A, 12.5 W, TO-126, Through Hole ![Product image](https://novapart.co/image/farnell:3368614/) **URL**: https://novapart.co/products/BD13516STU/bipolar-bjt-single-transistor-npn-45-v-15-a-125-w **SKU**: BD13516STU **Manufacturer**: ONSEMI **Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT **Price**: €0.2370 **Stock**: 1000+ **Lead Time**: 2 days (indicative) ## Specifications | Parameter | Value | |---|---| | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | BD135 | | Qualification | - | | Power Dissipation | 12.5W | | Transistor Mounting | Through Hole | | Transistor Polarity | NPN | | Transition Frequency | - | | Transistor Case Style | TO-126 | | Dc Current Gain Hfe Min | 100hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 1.5A | | Collector Emitter Voltage Max | 45V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:3368614/) ## BD135G, BD137G, BD139G ## Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ## **http://onsemi.com** ## **Features** ## **1.5 A POWER TRANSISTORS NPN SILICON 45, 60, 80 V, 12.5 W** - High DC Current Gain - BD 135, 137, 139 are complementary with BD 136, 138, 140 - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* **==> picture [454 x 332] intentionally omitted <==** **----- Start of picture text -----**
COLLECTOR
2, 4
MAXIMUM RATINGS
Rating Symbol Value Unit
3
Collector−Emitter Voltage VCEO Vdc BASE
BD135G 45
BD137G 60 &)
BD139G 80 1
EMITTER
Collector−Base Voltage VCBO Vdc
BD135G 45
BD137G 60
BD139G 100
Emitter−Base Voltage VEBO 5.0 Vdc TO−225
Collector Current IC 1.5 Adc CASE 77−09
STYLE 1
Base Current IB 0.5 Adc
Total Device Dissipation@ TA = 25 ° C PD 1.25 Watts 1 2 3
Derate above 25 ° C 10 mW/ ° C
MARKING DIAGRAM
Total Device Dissipation PD
@ TC = 25 ° C 12.5 Watts
Derate above 25 ° C 100 mW/ ° C
Operating and Storage Junction TJ, Tstg –55 to +150 ° C YWWBD1xxG
Temperature Range
a?
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be Y = Year
assumed, damage may occur and reliability may be affected. WW = Work Week
BD1xx = Device Code
THERMAL CHARACTERISTICS
xx = 35, 37, 39
Characteristic Symbol Max Unit G = Pb−Free Package
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**Characteristic Symbol Max Unit** G = Pb−Free Package Thermal Resistance, Junction−to−Case R JC 10 ° C/W **ORDERING INFORMATION** Thermal Resistance, Junction−to−Ambient R JA 100 ° C/W **Device Package Shipping** BD135G TO−225 500 Units / Box (Pb−Free) BD135TG TO−225 50 Units / Rail (Pb−Free) BD137G TO−225 500 Units / Box (Pb−Free) *For additional information on our Pb−Free strategy and soldering details, please BD139G TO−225 500 Units / Box download the ON Semiconductor Soldering and Mounting Techniques (Pb−Free) ~~ne~~ Reference Manual, SOLDERRM/D. Publication Order Number: **BD135/D** **1** © Semiconductor Components Industries, LLC, 2013 **December, 2013 − Rev. 17** **BD135G, BD137G, BD139G** ## **ELECTRICAL CHARACTERISTICS** (TC = 25 � C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted)||||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Max**|**UnIt**| |Collector−Emitter Sustaining Voltage*
(IC= 0.03 Adc, IB= 0)
BD135G
BD137G
BD139G|BVCEO*|45
60
80|−
−
−|Vdc| |Collector Cutoff Current
(VCB= 30 Vdc, IE= 0)
(VCB= 30 Vdc, IE= 0, TC= 125�C)|ICBO|−
−|0.1
10|�Adc| |Emitter Cutoff Current
(VBE= 5.0 Vdc, IC= 0)|IEBO|−|10|�Adc| |DC Current Gain
(IC= 0.005 A, VCE= 2 V)
(IC= 0.15 A, VCE= 2 V)
(IC= 0.5 A VCE= 2 V)|hFE*|25
40
25|−
250
−|−| |Collector−Emitter Saturation Voltage*
(IC= 0.5 Adc, IB= 0.05 Adc)|VCE(sat)*|−|0.5|Vdc| |Base−Emitter On Voltage*
(IC= 0.5 Adc, VCE= 2.0 Vdc)|VBE(on)*|−|1|Vdc| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2.0%. ## **TYPICAL CHARACTERISTICS** **==> picture [490 x 173] intentionally omitted <==** **----- Start of picture text -----**
1000 0.3
VCE = 2 V IC/IB = 10 150 ° C
150 ° C
0.2
25 ° C
−55 ° C
100 −55 ° C 25 ° C
0.1
10 0
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
, DC CURRENT GAIN , COLLECTOR−EMITTER
FE
h
SATURATION VOLTAGE (V)
CE(sat)
V
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**Figure 1. DC Current Gain** **Figure 2. Collector−Emitter Saturation Voltage** **http://onsemi.com** **2** **BD135G, BD137G, BD139G** ## **TYPICAL CHARACTERISTICS** **==> picture [490 x 387] intentionally omitted <==** **----- Start of picture text -----**
1.2 1.2
IC/IB = 10 VCE = 2 V
1.0 1.0
−55 ° C −55 ° C
0.8 25 ° C 0.8 25 ° C
0.6 0.6
150 ° C
150 ° C
0.4 0.4
0.2 0.2
0 0
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 3. Base−Emitter Saturation Voltage Figure 4. Base−Emitter On Voltage
1000 10
f = 1 MHz
0.1 ms
Cib 5 ms 0.5 ms
100 1
TJ = 125 ° C dc
Cob
10 0.1
BD135
BD137
BD139
1 0.01
0.1 1 10 100 1 10 80
VR, REVERSE VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
, BASE−EMITTER
BE(sat)
V
SATURATION VOLTAGE (V) , BASE−EMITTER ON VOLTAGE (V)
BE(on)
V
C, CAPACITANCE (pF)
, COLLECTOR CURRENT (A)
IC
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**Figure 5. Capacitance** **Figure 6. Active−Region Safe Operating Area** **==> picture [243 x 173] intentionally omitted <==** **----- Start of picture text -----**
1.50
1.25
1.00
0.75
0.50
0.25
0
0 20 40 60 80 100 120 140 160
TA, AMBIENT TEMPERATURE ( ° C)
, POWER DISSIPATION (W)
D
P
**----- End of picture text -----**
**Figure 7. Power Derating** **http://onsemi.com** **3** **BD135G, BD137G, BD139G** **==> picture [472 x 435] intentionally omitted <==** **----- Start of picture text -----**
PACKAGE DIMENSIONS
TO−225
CASE 77−09
4 ISSUE AC
1 3
2 3 2 1
FRONT VIEW BACK VIEW
E NOTES:
1. DIMENSIONING AND TOLERANCING PER
A1 ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
Q A 3. NUMBER AND SHAPE OF LUGS OPTIONAL.
PIN 4 MILLIMETERS
BACKSIDE TAB DIM MIN MAX
A 2.40 3.00
A1 1.00 1.50
b 0.60 0.90
D b2 0.51 0.88
P c 0.39 0.63
D 10.60 11.10
E 7.40 7.80
1 2 3
e 2.04 2.54
L 14.50 16.63
L1 1.27 2.54
P 2.90 3.30
L1 Q 3.80 4.20
STYLE 1:
L PIN 1.2., 4. EMITTERCOLLECTOR
3. BASE
Trcial
2X b2
2X e
I b c a l
FRONT VIEW SIDE VIEW
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