# Bipolar (BJT) Single Transistor, PNP, 45 V, 100 mA, 250 mW, SOT-23, Surface Mount ![Product image](https://novapart.co/image/farnell:1081268/) **URL**: https://novapart.co/products/BCW70,215/bipolar-bjt-single-transistor-pnp-45-v-100-ma-250 **SKU**: BCW70,215 **Manufacturer**: NEXPERIA **Price**: €0.0730 **Stock**: 1000+ **Lead Time**: 373 days (indicative) ## Description Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:150hFE; Transistor Case Sty ## Specifications | Parameter | Value | |---|---| | Msl | MSL 1 - Unlimited | | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | - | | Qualification | - | | Power Dissipation | 250mW | | Transistor Mounting | Surface Mount | | Transistor Polarity | PNP | | Transition Frequency | - | | Transistor Case Style | SOT-23 | | Dc Current Gain Hfe Min | 150hFE | | Operating Temperature Max | 150°C | | Continuous Collector Current | 100mA | | Collector Emitter Voltage Max | 45V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:1081268/) Philips Semiconductors eee Product specification ## PNP general purpose transistors ## BCW69; BCW70 ## eee ## FEATURES e Low current (max. 100 mA) ## APPLICATIONS ¢ General purpose switching and amplification. ## DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BCW71 and BCW72. ## MARKING **==> picture [197 x 15] intentionally omitted <==** **----- Start of picture text -----**
TYPE NUMBER MARKING CODE“)
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PINNING **==> picture [204 x 204] intentionally omitted <==** **----- Start of picture text -----**
| PIN | DESCRIPTION
3
:
1 —{
1 5 2
,
**----- End of picture text -----**
## Note 1. * =p: Made in Hong Kong. * = t: Made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol. ## LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). |SYMBOL|PARAMETER|CONDITIONS||MIN.
| MAX. | UNIT| |---|---|---|---| ||collector-emitter voltage
emitter-basevoltage|open base; Ic=-2mA
opencollector|fs |-45 fv
-
[5
|v
|| 1999 Apr 19 2 Philips Semiconductors Product specification BCW69; BCW70 ## PNP general purpose transistors ## THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FRé4 printed-circuit board. ## CHARACTERISTICS |Tj = 25 °C unless otherwise specified.
[svmeo.[PARAMETER [CONDITIONS
| MIN.| TYP |MAK. UNTT
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DC current gain
Io =-10 WA; Vee =-5 V| |---| |BCW69
90| |BCW70
150| |DC current gain
Ic
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120
260| |BCW70
215
500| |VceEsat
collector-emitter saturation
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base-emitter saturation voltage
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PREY
||PP
Rg
= 2 kQ; f =
1 kHz;
B = 200 Hz| Note 1. Pulse test: t, < 300 us; 6 < 0.02. 1999 Apr 19 3 Philips Semiconductors Product specification ## PNP general purpose transistors ## BCW69; BCW70 ## PACKAGE OUTLINE **==> picture [495 x 627] intentionally omitted <==** **----- Start of picture text -----**
Plastic surface mounted package; 3 leads SOT23
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DIMENSIONS (mm are the original dimensions)
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crm fos14 [0 [ 0 48S |[sos 0.15 | 3 05 | 1 .43 [12 Jos | 2.5at |[880.4 5 | 0 .55% | oe | oe |
RSourune |eeCREFERENCES =||EUROPEAN eo
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1999 Apr 19 4
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