# Bipolar (BJT) Single Transistor, NPN, 45 V, 800 mA, 330 mW, SOT-23, Surface Mount

![Product image](https://novapart.co/image/farnell:1798057/)

**URL**: https://novapart.co/products/BCW66H/bipolar-bjt-single-transistor-npn-45-v-800-ma-330
**SKU**: BCW66H
**Manufacturer**: MULTICOMP PRO
**Price**: €0.0350
**Stock**: 1000+
**Lead Time**: 138 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:170MHz; Power Dissipation Pd:330mW; DC Collector Current:800mA; DC Current Gain hFE:630hFE; Tran

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (04-Feb-2026) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 330mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 170MHz |
| Transistor Case Style | SOT-23 |
| Dc Current Gain Hfe Min | 630hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 800mA |
| Collector Emitter Voltage Max | 45V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1798057/)

## **Bipolar Single Transistor NPN** 

## **Features** 

- For general AF applications 

- High current gain 

- Low collector-emitter saturation voltage 

- Complementary types: BCW67, BCW68 (PNP) 

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**----- Start of picture text -----**<br>
Collector<br>3<br>1<br>Base<br>Pin Configuration:<br>2  1. Base<br>Emitter<br>2. Emitter<br>3. Collector<br>**----- End of picture text -----**<br>


## **Applications** 

- General purpose medium power amplifier 

- Switching application 

## **Maximum Ratings** 

|**Maximum Ratings**|||
|---|---|---|
|**Parameter**|**Symbol**|**Value**|
|Collector - Base Voltage|Vcbo|45|
|Collector - Emitter Voltage|Vceo|75|
|Emitter - Base Voltage|Vebo|5|
|DC Collector Current|Ic|-1|
|Collector Current Continuous|Ic|800|
|Collector Dissipation|Pc|330|
|Junction and Storage Temperature|Tj, Tstg|-65 to +150|



## **Electrical Characteristics (Ta = 25°C unless otherwise noted)** 

|**Parameter**<br>~~en~~<br>~~———e~~|**Symbol**<br>~~en~~<br>~~ee~~|**Test Conditions**<br>~~en~~<br>~~ee~~|**Min.**<br>~~en~~<br>~~oo~~|**Typ.**<br>~~en~~<br>~~oo~~|**Max.**<br>~~en~~<br>~~oo~~|**Unit**<br>~~en~~|
|---|---|---|---|---|---|---|
|Collector - Base Breakdown Voltage<br>~~a~~<br>~~———e~~|V(BR)CBO<br>~~ee~~|Ic=10μA, Ie=0<br>~~ee~~|75<br>~~oo~~|~~oo~~|~~oo~~|V|
|Collector - Emitter Breakdown Voltage<br>~~———e~~|(BR)CBO<br>V(BR)CEO<br>~~ee~~|Ic=10mA, Ib=0<br>~~ee~~|45<br>~~oo~~|~~oo~~|~~oo~~||
|Emitter - Base Breakdown Voltage<br>~~———e~~<br>~~a~~<br>~~SS~~|(BR)CEO<br>V(BR)EBO<br>~~ee~~|Ie=10μA, Ic=0<br>~~ee~~|5<br>~~oo~~|~~oo~~|~~oo~~||
|Collector Cut-Off Current<br>~~———e ~~<br>~~SS~~|(BR)EBO<br>ICBO<br> ~~ee ~~|Vcb=45V, Ie=0<br> ~~ee ~~|~~oo ~~|~~oo ~~|20<br> ~~oo~~|nA|
|Emitter Cut-Off Current<br>~~SS~~<br>~~a~~|IEBO|Veb=4V, Ic=0<br>~~ee~~|~~ee~~|~~ee~~|20<br>~~ee~~||
|DC Current Gain<br>~~SS~~<br>~~a~~|hfe|VCE=10V, IC=100μA<br>~~ee~~<br>~~ee~~|50<br>80<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|-|
|||VCE=1V, IC=10mA<br>~~ee ~~<br>~~ee~~|120<br>180<br> ~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~||
|||VCE=1V, IC=100mA<br>~~ee ~~<br>~~re~~|160<br>250<br> ~~ee~~<br>~~re~~|-<br>~~ee~~<br>~~re~~|400<br>630<br>~~ee~~<br>~~re~~||



Newark.com/multicomp-pro Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro 

22/06/23 V1.0 

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## **Bipolar Single Transistor NPN** 

|**Parameter**|**Symbol**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Collector - Emitter Saturation Voltage|VCE(sat)|IC=-100mA, IB=10mA<br>IC=-500mA, IB=50mA|-|-|0.3<br>0.7|V|
|Base Emitter Saturation Voltage|VBE(sat)|IC=100mA, IB=10mA<br>IC=500mA, IB=50mA|-|-|1.25<br>2||
|Transition Frequency|ft|VCE=5V, IC=50mA<br>f=20MHz|-|170|-|MHz|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Value**|**Unit**|
|Power Dissipation|Pd|330|mW|
|Thermal Resistance Junction-to-Air *|Rθja|395|°C/W|
|Thermal Resistance Junction-to-Case *|Rθjc|218|°C/W|
|Thermal Resistance Junction-to-Lead *|Rθjl|191|°C/W|
|OperatingJunction temperature|Tj|-55 to +150|°C|
|Storage Temperature Range|Tstg|||



**Note** : * The data tested by surface mounted on a 15mm×15mm×1mm FR4-epoxy P.C.B 

**Total power dissipation** _P_ tot = _f_ ( _T_ S) 

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**----- Start of picture text -----**<br>
Transition frequency f T =  f ( I C)<br>V CE = 5V<br>**----- End of picture text -----**<br>


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Newark.com/multicomp-pro Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro 

22/06/23 V1.0 

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## **Bipolar Single Transistor NPN** 

## **Permissible pulse load** 

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**----- Start of picture text -----**<br>
P totmax /  P totDC =  f ( t p)<br>**----- End of picture text -----**<br>


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**Collector cutoff current** _I_ CBO = _f_ ( _T_ A) 

**==> picture [52 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
V  =  V<br>CB CEmax<br>**----- End of picture text -----**<br>


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**Base-emitter saturation voltage** _I_ C = _f_ ( _V_ BEsat), _h_ FE = 10 

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**Collector-emitter saturation voltage** 

_I_ C = _f_ ( _V_ CEsat), _h_ FE = 10 

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Newark.com/multicomp-pro Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro 

22/06/23 V1.0 

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## **Bipolar Single Transistor NPN** 

## **Package Outline** 

## **Plastic Surface Mounted Package** 

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**----- Start of picture text -----**<br>
A<br>E<br>E<br>K B<br>J<br>D<br>G<br>H<br>Tha t<br>C<br>**----- End of picture text -----**<br>


|**Dimensions**|**Min.**|**Max.**|
|---|---|---|
|A|2.85|2.95|
|B|1.25|1.35|
|C|1 Typical||
|D|0.4 Typical||
|E|0.35|0.48|
|G|1.85|1.95|
|H|0.02|0.1|
|J|0.1 Typical||
|K|2.35|2.45|



## **Soldering Footprint** 

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**----- Start of picture text -----**<br>
0.95 0.95<br>2<br>0.9<br>0.8<br>—<br>**----- End of picture text -----**<br>


## **Part Number Table** 

## Dimensions : Millimetres 

|**Part Number Table**||
|---|---|
|**Description**|**Part Number**|
|Transistor, NPN, 0.8A, 45V, SOT-23|BCW66H|



**Important Notice :** This data sheet and its contents (the “Information”) belong to the members of the AVNET group of companies (the “Group”) or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence. Multicomp Pro is the registered trademark of Premier Farnell Limited 2019. 

Newark.com/multicomp-pro Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro 

22/06/23 V1.0 

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## Links

- [View this product on Novapart](https://novapart.co/products/BCW66H/bipolar-bjt-single-transistor-npn-45-v-800-ma-330)
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- [Supplier page](https://es.farnell.com/multicomp-pro/bcw66h/transistor-npn-0-8a-45v-sot23/dp/1798057)
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