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BCV29,115

Bipolar Transistor Array, Dual NPN, 30 V, 500 mA, 1.3 W

  • Manufacturer: NEXPERIA
  • Product type: Bipolar Junction Transistor Arrays - BJT
  • Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:30V; Power Dissipation Pd:1.3W; DC Collector Current:500mA; DC Current Gain hFE:4000hFE; Transistor Case Style:SO
  • MSL: MSL 1 - Unlimited
  • SVHC: No SVHC (25-Jun-2025)
  • No. of Pins: 3Pins
  • Product Range: -
  • Qualification: -
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: Dual NPN
  • Power Dissipation NPN: 1.3W
  • Power Dissipation PNP: -
  • Transistor Case Style: SOT-89
  • Transition Frequency NPN: 220MHz
  • Transition Frequency PNP: -
  • Operating Temperature Max: 150°C
  • DC Current Gain hFE Min NPN: 4000hFE
  • DC Current Gain hFE Min PNP: -
  • Continuous Collector Current NPN: 500mA
  • Continuous Collector Current PNP: -
  • Collector Emitter Voltage Max NPN: 30V
  • Collector Emitter Voltage Max PNP: -
Delivery and price
Units per pack 5000
Price 0.217 €
Current stock 1000+
Lead time 7 days

Updated at March 17, 2026