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BCV29,115

Bipolar Transistor Array, Dual NPN, 30 V, 500 mA, 1.3 W, 4000 hFE, SOT-89

  • Manufacturer: NEXPERIA
  • Product type: Bipolar Junction Transistor Arrays - BJT
  • Product variants: No other variants available. No other names.
  • No. of Pins: 3Pins
  • DC Current Gain hFE: 4000hFE
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: Dual NPN
  • DC Collector Current: 500mA
  • Power Dissipation Pd: 1.3W
  • Power Dissipation NPN: 1.3W
  • Transistor Case Style: SOT-89
  • Transition Frequency NPN: 220MHz
  • Operating Temperature Max: 150°C
  • DC Current Gain hFE Min NPN: 4000hFE
  • Continuous Collector Current NPN: 500mA
  • Collector Emitter Voltage Max NPN: 30V
  • Collector Emitter Voltage V(br)ceo: 30V
Delivery and price
Units per pack 5000
Price 0.122 €
Current stock 2092
Lead time 7 days