# Bipolar (BJT) Single Transistor, PNP, 65 V, 100 mA, 200 mW, SOT-323, Surface Mount

![Product image](https://novapart.co/image/farnell:4318441/)

**URL**: https://novapart.co/products/BC856BW/bipolar-bjt-single-transistor-pnp-65-v-100-ma-200
**SKU**: BC856BW
**Manufacturer**: DIODES INC.
**Price**: €0.0170
**Stock**: 10+
**Lead Time**: 316 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 200mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | PNP |
| Transition Frequency | 200MHz |
| Transistor Case Style | SOT-323 |
| Dc Current Gain Hfe Min | 290hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 100mA |
| Collector Emitter Voltage Max | 65V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4318441/)

## - BC856AW BC858CW 

## PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR 

## Features 

|Features|Features|Features|Features|Features|Features|Features|Features|Features|Features|Features|Features|Features|Features|Features|Features|Features|Features|Features|Features|Features|Features|Features|Features|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Ideally Suited for Automatic Insertion<br>Complementary NPN Types Available<br>(BC846W-BC848W)<br>For Switching and AF Amplifier Applications<br>Case: SOT-323, Molded Plastic<br>Terminals: Solderable per MIL-STD-202,<br>Method 208<br>Pin Connections and Marking Codes<br>(See Table & Diagram)<br>Approx. Weight: 0.006 grams<br>Mechanical Data<br>A<br>E<br>J<br>L<br>M<br>B<br>C<br>H<br>G<br>D<br>K<br>TOP VIEW<br>C<br>E<br>B<br>O~~T~~<br>}<br>~~io~~||||||||||||||||||||||||
||||Marking Code (Note 2)|||||||||||||||||||||
||||Type<br>Marking<br>Type<br>Marking|||||||||||||||||||||
||||BC856AW<br>K3A<br>BC857CW<br>K3G|||||||||||||||||||||
||||BC856BW<br>K3B<br>BC858AW<br>K3J, K3A, K3V|||||||||||||||||||||
||||BC857AW<br>K3V, K3A<br>BC858BW<br>K3K, K3B, K3W|||||||||||||||||||||
||||BC857BW<br>K3W, K3B<br>BC858CW<br>K3L, K3G|||||||||||||||||||||



|Dim<br>A<br>B<br>C<br>D<br>E<br>G<br>H<br>J|SOT-323<br>Min<br>Max<br>0.30<br>0.40<br>1.15<br>1.35<br>2.00<br>2.20<br>0.65 Nominal<br>0.30<br>0.40<br>1.20<br>1.40<br>1.80<br>2.20<br>0.0<br>0.10|SOT-323<br>Min<br>Max<br>0.30<br>0.40<br>1.15<br>1.35<br>2.00<br>2.20<br>0.65 Nominal<br>0.30<br>0.40<br>1.20<br>1.40<br>1.80<br>2.20<br>0.0<br>0.10|
|---|---|---|
|K|0.90|1.00|
|L|0.25|0.40|
|M|0.10|0.25|
|All Dimensions in mm|||



## Maximum Ratings[@ T] A[= 25°C unless otherwise specified] 

|Maximum Ratings [@ T]A [= 25°C unless otherwise specified]|[= 25°C unless otherwise specified]|||
|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|Collector-Base Voltage<br>BC856<br>BC857<br>BC858|VCBO|-80<br>-50<br>-30|V|
|Collector-Emitter Voltage<br>BC856<br>BC857<br>BC858|VCEO|-65<br>-45<br>-30|V|
|Emitter-Base Voltage|VEBO|-5.0|V|
|Collector Current|IC|-100|mA|
|Peak Collector Current|ICM|-200|mA|
|Peak Emitter Current|IEM|-200|mA|
|Power Dissipation (Note 1)|Pd|200|mW|
|Operating and Storage Temperature Range|Tj, TSTG|-65 to +150|°C|



Notes: 1. Package mounted on FR4 printed circuit board. 

2. Current gain subgroup “C” is not available for BC856W. 

DS30251 Rev. A-2 

1 of 2 

BC856AW - BC858CW 

## Electrical Characteristics @ TA =25°C unless otherwise specified 

**==> picture [504 x 283] intentionally omitted <==**

**----- Start of picture text -----**<br>
Characteristic Symbol Min Typ Max Unit Test Condition<br>Collector-Base Breakdown Voltage (Note 3)             BC856 -80 — —<br>BC857 V(BR)CBO -50 — — V IC = 10�A, IB = 0<br>BC858 -30 — —<br>Collector-Emitter Breakdown Voltage (Note 3)          BC856 -65 — —<br>BC857 V(BR)CEO -45 — — V IC = 10mA, IB = 0<br>BC858 -30 — —<br>Emitter-Base Breakdown Voltage (Note 3) V(BR)EBO -5 — — V IE = 1�A, IC = 0<br>DC Current Gain (Note 3) Current Gain Group A 125 180 250<br>B hFE 220 290 475 — VCE = -5.0V, IC = -2.0mA<br>C 420 520 800<br>Thermal Resistance, Junction to Ambient R�JA — — 625 °C/W Note 1<br>Collector-Emitter Saturation Voltage (Note 3) VCE(SAT) — -250-75 -300-650 mV IICC = -10mA, I = -100mA, IB = -0.5mAB = -5.0mA<br>— -700 — IC = -10mA, IB = -0.5mA<br>Base-Emitter Saturation Voltage (Note 3) VBE(SAT) — -850 -950 mV IC = -100mA, IB = -5.0mA<br>-600 -650 -750 VCE = -5.0V, IC = -2.0mA<br>Base-Emitter Voltage (Note 3) VBE(ON) — — -820 mV VCE = -5.0V, IC = -10mA<br>Collector-Cutoff Current (Note 3) IICBOCBO —— —— -4.0-15 µAnA VVCBCB = -30V = -30V, TA = 150°C<br>Gain Bandwidth Product fT 100 200 — MHz Vf = 100MHzCE = -5.0V, IC = -10mA,<br>Collector-Base Capacitance CCBO — 3 4.5 pF VCB = -10V, f = 1.0MHz<br>VCE = -5.0V, IC = 200µA,<br>Noise Figure NF — — 10 dB RS = 2k�� f = 1kHz,<br>�f = 200Hz<br>**----- End of picture text -----**<br>


Notes: 1. Package mounted on FR4 printed circuit board. 

2. Current gain subgroup “C” is not available for BC856W. 

3. Short duration pulse test to minimize self-heating effect. 

DS30251 Rev. A-2 

2 of 2 

BC856AW - BC858CW 



## Links

- [View this product on Novapart](https://novapart.co/products/BC856BW/bipolar-bjt-single-transistor-pnp-65-v-100-ma-200)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/diodes-inc/bc856bw/transistor-pnp-65v-0-1a-sot-323/dp/4318441)
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