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This product is RoHS compilant

BC847QAPNZ

Bipolar Transistor Array, NPN, PNP, 45 V, 100 mA, 350 mW, 200 hFE, DFN1010B

  • Manufacturer: NEXPERIA
  • Product type: Bipolar Junction Transistor Arrays - BJT
  • Product variants: No other variants available. No other names.
  • Power Dissipation NPN: 350mW
  • Power Dissipation PNP: 350mW
  • Transition Frequency NPN: 100MHz
  • Transition Frequency PNP: 100MHz
  • DC Current Gain hFE Min NPN: 200hFE
  • DC Current Gain hFE Min PNP: 200hFE
  • Continuous Collector Current NPN: 100mA
  • Continuous Collector Current PNP: 100mA
  • Collector Emitter Voltage Max NPN: 45V
  • Collector Emitter Voltage Max PNP: 45V
Delivery and price
Units per pack 5000
Price 0.048 €
Current stock 17540
Lead time 7 days