# Bipolar Transistor Array, General Purpose, Dual NPN, 45 V, 100 mA, 250 mW
**URL**: https://novapart.co/products/BC847BV,115/bipolar-transistor-array-general-purpose-dual-npn
**SKU**: BC847BV,115
**Manufacturer**: NEXPERIA
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Bipolar Junction Transistor Arrays - BJT
**Price**: €0.0940
**Stock**: 1000+
**Lead Time**: 64 days (indicative)
## Description
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-666; No. of Pins:6P
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Product Range | - |
| Qualification | - |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | Dual NPN |
| Power Dissipation Npn | 250mW |
| Power Dissipation Pnp | - |
| Transistor Case Style | SOT-666 |
| Transition Frequency Npn | 100MHz |
| Transition Frequency Pnp | - |
| Operating Temperature Max | 150°C |
| Dc Current Gain Hfe Min Npn | 200hFE |
| Dc Current Gain Hfe Min Pnp | - |
| Continuous Collector Current Npn | 100mA |
| Continuous Collector Current Pnp | - |
| Collector Emitter Voltage Max Npn | 45V |
| Collector Emitter Voltage Max Pnp | - |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:8734747/)
## **DISCRETE SEMICONDUCTORS**
## **DATA SHEET**
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M3D744
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## **BC847BV** NPN general purpose double transistor
2001 Sep 10
**Philips Semiconductors**
## **NPN general purpose double transistor**
# **BC847BV**
## **FEATURES**
- 300 mW total power dissipation
- Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package
- Excellent coplanarity due to straight leads
- Low collector capacitance
## **PINNING**
|**PINNING**||
|---|---|
|**PIN**|**DESCRIPTION**|
|1, 4|emitter
TR1; TR2|
|2, 5|base
TR1; TR2|
|6, 3|collector
TR1; TR2|
- Improved thermal behaviour due to flat leads
- Reduces number of components as replacement of two SC-75/SC-89 packaged BISS transistors
- Reduces required board space
- Reduces pick and place costs.
## **APPLICATIONS**
- General purpose switching and amplification.
## **DESCRIPTION**
NPN double transistor in a SOT666 plastic package. PNP complement: BC857BV.
**==> picture [242 x 107] intentionally omitted <==**
**----- Start of picture text -----**
handbook, halfpage 6 5 4
6 5 4
TR2
TR1
1 2 3 1 2 3
MAM447
Top view
**----- End of picture text -----**
## **MARKING**
|**MARKING**||
|---|---|
|**TYPE NUMBER**|**MARKING CODE**|
|BC847BV|1F|
Fig.1 Simplified outline (SOT666) and symbol.
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Philips Semiconductors
## NPN general purpose double transistor
## BC847BV
## **LIMITING VALUES**
In accordance with the Absolute Maximum Rating System (IEC 60134).
|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**|
|---|---|---|---|---|---|
|**Per transistor**||||||
|VCBO|collector-base voltage|open emitter|−|50|V|
|VCEO|collector-emitter voltage|open base|−|45|V|
|VEBO|emitter-base voltage|open collector|−|5|V|
|IC|collector current (DC)||−|100|mA|
|ICM|peak collector current||−|200|mA|
|IBM|peak base current||−|200|mA|
|Ptot|total power dissipation|Tamb≤25°C; note 1|−|200|mW|
|Tstg|storage temperature||−65|+150|°C|
|Tj|junction temperature||−|150|°C|
|Tamb|operating ambient temperature||−65|+150|°C|
|**Per device**||||||
|Ptot|total power dissipation|Tamb≤25°C; note 1|−|300|mW|
## **Note**
1. Transistor mounted on an FR4 printed-circuit board.
## **THERMAL CHARACTERISTICS**
|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**VALUE**|**UNIT**|
|---|---|---|---|---|
|Rth j-a|thermal resistance from junction to ambient|notes 1 and 2|416|K/W|
## **Notes**
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
2001 Sep 10
3
Philips Semiconductors
## NPN general purpose double transistor
## BC847BV
## **CHARACTERISTICS**
Tamb = 25 °
|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNIT**|
|---|---|---|---|---|---|---|
|**Per transistor**|||||||
|ICBO|collector-base cut-off current|IE= 0; VCB= 30 V|−|−|15|nA|
|||IE= 0; VCB= 30 V; Tj= 150°C|−|−|5|µA|
|IEBO|emitter-base cut-off current|IC= 0; VEB= 5 V|−|−|100|nA|
|hFE|DC current gain|IC= 2 mA; VCE= 5 V|200|−|450||
|VBE|base-emitter voltage|IC= 2 mA; VCE= 5 V|580|655|700|mV|
|VCEsat|collector-emitter saturation voltage|IC= 10 mA; IB= 0.5 mA|−|−|100|mV|
|||IC= 100 mA; IB= 5 mA; note 1|−|−|300|mV|
|VBEsat|base-emitter saturation voltage|IC= 10 mA; IB= 0.5 mA|−|755|−|mV|
|Cc|collector capacitance|IE= Ie= 0; VCB= 10 V; f = 1 MHz|−|−|1.5|pF|
|Ce|emitter capacitance|IC= ic= 0; VEB= 500 mV;f = 1 MHz|−|11|−|pF|
|fT|transition frequency|IC= 10 mA; VCE= 5 V; f = 100 MHz|100|−|−|MHz|
## **Note**
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
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MBH724
300
handbook, full pagewidth
hFE VCE = 5 V
200
100
0
10 [−][2] 10 [−][1] 1 10 10 [2] 10 [3]
IC (mA)
**----- End of picture text -----**
Fig.2 DC current gain; typical values.
2001 Sep 10
4
Philips Semiconductors
## NPN general purpose double transistor
## BC847BV
## **Graphical information BC847BV**
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**----- Start of picture text -----**
MHB971
600
handbook, halfpage
hFE (1)
500
400
(2)
300
200
(3)
100
0
10 [−][1] 1 10 10 [2] 10 [3]
IC (mA)
VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.3 DC current gain; typical values.
**----- End of picture text -----**
**==> picture [242 x 291] intentionally omitted <==**
**----- Start of picture text -----**
MHB972
1200
handbook, halfpageVBE
(mV)
1000
800 (1)
(2)
600
400
(3)
200
0
10 [−][2] 10 [−][1] 1 10 10 [2] 10 [3]
IC (mA)
VCE = 5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.4 Base-emitter voltage as a function of
collector current; typical values.
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**----- Start of picture text -----**
MHB973
10 [4]
handbook, halfpage
VCEsat
(mV)
10 [3]
10 [2]
(1)
(2)
(3)
10
10 [−][1] 1 10 10 [2] 10 [3]
IC (mA)
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.5 Collector-emitter saturation voltage as a
function of collector current; typical values.
**----- End of picture text -----**
**==> picture [242 x 240] intentionally omitted <==**
**----- Start of picture text -----**
MHB974
1200
handbook, halfpageVBEsat
(mV)
1000
(1)
800
(2)
600
(3)
400
200
0
10 [−][1] 1 10 10 [2] 10 [3]
IC (mA)
IC/IB 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
**----- End of picture text -----**
**==> picture [211 x 22] intentionally omitted <==**
**----- Start of picture text -----**
Fig.6 Base-emitter saturation voltage as a
function of collector current; typical values.
**----- End of picture text -----**
2001 Sep 10
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Philips Semiconductors
## NPN general purpose double transistor
## BC847BV
## **PACKAGE OUTLINE**
## **Plastic surface mounted package; 6 leads**
## **SOT666**
**==> picture [495 x 590] intentionally omitted <==**
**----- Start of picture text -----**
D A E X
S Y S
HE
6 5 4
pin 1 index
A
1 2 3 c
e1 bp w M A
Lp
e
detail X
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A bp c D E e e1 HE Lp w y
0.6 0.27 0.18 1.7 1.3 1.7 0.3
mm 1.0 0.5 0.1 0.1
0.5 0.17 0.08 1.5 1.1 1.5 0.1
OUTLINE REFERENCES EUROPEAN
ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION
01-01-04
SOT666
01-08-27
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2001 Sep 10
6
Philips Semiconductors
## NPN general purpose double transistor
## BC847BV
## **DATA SHEET STATUS**
|**DATA SHEET STATUS**|||
|---|---|---|
|**DATA SHEET STATUS**(1)|**PRODUCT**
**STATUS**(2)|**DEFINITIONS**|
|Objective data|Development|This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specifcation in any manner without notice.|
|Preliminary data|Qualifcation|This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specifcation without
notice, in order to improve the design and supply the best possible
product.|
|Product data|Production|This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notifcation (CPCN) procedure SNW-SQ-650A.|
## **Notes**
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
## **DEFINITIONS**
**Short-form specification** The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.
**Limiting values definition** Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
**Application information** Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
## **DISCLAIMERS**
**Life support applications** These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
**Right to make changes** Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2001 Sep 10
7
## **Philips Semiconductors – a worldwide company**
## **Contact information**
For additional information please visit **http://www.semiconductors.philips.com** . Fax: **+31 40 27 24825** For sales offices addresses send e-mail to: **sales.addresses@www.semiconductors.philips.com** .
© Koninklijke Philips Electronics N.V. 2001
SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
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Printed in The Netherlands
613514/01/pp8 Date of release: 2001 Sep 10 Document order number: 9397 750 08589
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- [Supplier page](https://es.farnell.com/nexperia/bc847bv-115/transistor-npn-sot-666/dp/8734747)
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