# Bipolar (BJT) Single Transistor, NPN, 45 V, 100 mA, 200 mW, SC-75, Surface Mount

![Product image](https://novapart.co/image/farnell:2464041RL/)

**URL**: https://novapart.co/products/BC847BTT1G/bipolar-bjt-single-transistor-npn-45-v-100-ma-200
**SKU**: BC847BTT1G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.0310
**Stock**: 10+
**Lead Time**: 145 days (indicative)

## Description

Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:100MHz; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:450hFE; Transist

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 200mW |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | NPN |
| Transition Frequency | 100MHz |
| Transistor Case Style | SC-75 |
| Dc Current Gain Hfe Min | 450hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 100mA |
| Collector Emitter Voltage Max | 45V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2464041RL/)

## BC847ATT1, BC847BTT1, BC847CTT1 

## General Purpose Transistors 

## **NPN Silicon** 

## **http://onsemi.com** 

These transistors are designed for general purpose amplifier applications. They are housed in the SC−75/SOT−416 package which is designed for low power surface mount applications. 

## **Features** 

- NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- Pb−Free Packages are Available 

**==> picture [69 x 88] intentionally omitted <==**

**----- Start of picture text -----**<br>
COLLECTOR<br>3<br>1<br>BASE<br>& )<br>2<br>EMITTER<br>**----- End of picture text -----**<br>


**MAXIMUM RATINGS** (TA = 25 ° C) **Rating Symbol Max Unit** Collector−Emitter Voltage VCEO 45 V Collector−Base Voltage VCBO 50 V Emitter−Base Voltage VEBO 6.0 V Collector Current − Continuous IC 100 mAdc ~~es~~ 

3 **CASE 463 SC−75/SOT−416** 2 **STYLE 1** 1 ~~*~~ 

**MARKING DIAGRAM** Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. **THERMAL CHARACTERISTICS** XXM **Characteristic Symbol Max Unit** Total Device Dissipation, PDD FR−4 Board (Note 1) 200 mW XX = Device Code TA = 25A = 25 = 25 ° C M = Date Code Derated above 25 ° C 1.6 mW/ ° C = Pb−Free Package ° (Note: Microdot may be in either location) ~~=a~~ 

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. **THERMAL CHARACTERISTICS** XXM **Characteristic Symbol Max Unit** Total Device Dissipation, PDD FR−4 Board (Note 1) 200 mW XX = Device Code TA = 25A = 25 = 25 ° C M = Date Code Derated above 25 ° C 1.6 mW/ ° C Thermal Resistance, R JA 600 ° C/W Junction−to−Ambient (Note 1) ~~=a~~ Total Device Dissipation, PD FR−4 Board (Note 2) 300 mW TA = 25 ° C Derated above 25 ° C 2.4 mW/ ° C Thermal Resistance, R JA 400 ° C/W Junction−to−Ambient (Note 2) ~~ee~~ Junction and Storage TJ, Tstg −55 to ° C Temperature Range +150 

**ORDERING INFORMATION** See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. 

1. FR−4 @ min pad. 

2. FR−4 @ 1.0 × 1.0 in pad. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2014 **November, 2014 − Rev. 3** 

**BC847ATT1/D** 

## **BC847ATT1, BC847BTT1, BC847CTT1** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)||||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||
|Collector−Emitter Breakdown Voltage<br>(IC= 10 mA)<br>BC847 Series|V(BR)CEO|45|−|−|V|
|Collector−Emitter Breakdown Voltage<br>(IC= 10�A, VEB= 0)<br>BC847 Series|V(BR)CES|50|−|−|V|
|Collector−Base Breakdown Voltage<br>(IC= 10�A)<br>BC847 Series|V(BR)CBO|50|−|−|V|
|Emitter−Base Breakdown Voltage<br>(IE= 1.0�A)<br>BC847 Series|V(BR)EBO|6.0|−|−|V|
|Collector Cutoff Current (VCB= 30 V)<br>(VCB= 30 V, TA= 150°C)|ICBO|−<br>−|−<br>−|15<br>5.0|nA<br>�A|
|**ON CHARACTERISTICS**||||||
|DC Current Gain<br>(IC= 10�A, VCE= 5.0 V)<br>BC847A<br>BC847B<br>BC847C<br>(IC= 2.0 mA, VCE= 5.0 V)<br>BC847A<br>BC847B<br>BC847C|hFE|−<br>−<br>−<br>110<br>200<br>420|90<br>150<br>270<br>180<br>290<br>520|−<br>−<br>−<br>220<br>450<br>800|−|
|Collector−Emitter Saturation Voltage (IC= 10 mA, IB= 0.5 mA)<br>Collector−Emitter Saturation Voltage(IC= 100 mA, IB= 5.0 mA)|VCE(sat)|−<br>−|−<br>−|0.25<br>0.6|V|
|Base−Emitter Saturation Voltage (IC= 10 mA, IB= 0.5 mA)<br>Base−Emitter Saturation Voltage(IC= 100 mA, IB= 5.0 mA)|VBE(sat)|−<br>−|0.7<br>0.9|−<br>−|V|
|Base−Emitter Voltage (IC= 2.0 mA, VCE= 5.0 V)<br>Base−Emitter Voltage(IC= 10 mA, VCE= 5.0 V)|VBE(on)|580<br>−|660<br>−|700<br>770|mV|
|**SMALL−SIGNAL CHARACTERISTICS**||||||
|Current−Gain − Bandwidth Product<br>(IC= 10 mA, VCE= 5.0 Vdc, f = 100 MHz)|fT|100|−|−|MHz|
|Output Capacitance (VCB= 10 V, f = 1.0 MHz)|Cobo|−|−|4.5|pF|
|Noise Figure<br>(IC= 0.2 mA, VCE= 5.0 Vdc, RS= 2.0 k�, f = 1.0 kHz, BW = 200 Hz)|NF|−|−|10|dB|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

**http://onsemi.com** 

**2** 

**BC847ATT1, BC847BTT1, BC847CTT1** 

**==> picture [490 x 447] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.0 1.0<br>1.5 VTACE = 25 = 10 V°C 0.90.8 TA = 25°C<br>VBE(sat) @ IC/IB = 10<br>1.0 0.7<br>0.8 0.6 VBE(on) @ VCE = 10 V<br>0.5<br>0.6<br>0.4<br>0.4 0.3<br>0.3 0.2<br>0.1 VCE(sat) @ IC/IB = 10<br>0.2 0<br>0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100<br>IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)<br>Figure 1. Normalized DC Current Gain Figure 2. “Saturation” and “On” Voltages<br>2.0 1.0<br>TA = 25°C -55°C to +125°C<br>1.2<br>1.6<br>IC = 200 mA 1.6<br>1.2<br>IC = IC = IC = 50 mA IC = 100 mA<br>2.0<br>10 mA 20 mA<br>0.8<br>2.4<br>0.4<br>2.8<br>0<br>0.02 0.1 1.0 10 20 0.2 1.0 10 100<br>IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>V, VOLTAGE (VOLTS)<br>hFE, NORMALIZED DC CURRENT GAIN<br>C)°<br>VCE, COLLECTOR-EMITTER VOLTAGE (V) VB, TEMPERATURE COEFFICIENT (mV/<br>θ<br>**----- End of picture text -----**<br>


**Figure 3. Collector Saturation Region** 

**Figure 4. Base−Emitter Temperature Coefficient** 

**http://onsemi.com** 

**3** 

**BC847ATT1, BC847BTT1, BC847CTT1** 

## **BC847** 

**==> picture [488 x 476] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.0<br>D = 0.5<br>0.2<br>0.1<br>0.1<br>0.05<br>0.02<br>0.01 0.01<br>SINGLE PULSE<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>t, TIME (s)<br>Figure 5. Normalized Thermal Response<br>10 400<br>300<br>7.0 T A  = 25°C<br>200<br>5.0 C ib<br>3.0 10080 VTACE = 25 = 10 V°C<br>Cob<br>60<br>2.0<br>40<br>30<br>1.0 20<br>0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50<br>VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)<br>r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE<br>C, CAPACITANCE (pF)<br>f�, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)T<br>**----- End of picture text -----**<br>


**Figure 6. Capacitances** 

**Figure 7. Current−Gain − Bandwidth Product** 

**http://onsemi.com** 

**4** 

**BC847ATT1, BC847BTT1, BC847CTT1** 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**||||
|---|---|---|---|
|**Device**|**Marking**|**Package**|**Shipping**†|
|BC847ATT1|1E|SC−75/SOT−416|3,000 / Tape & Reel|
|BC847BTT1|1F|SC−75/SOT−416|3,000 / Tape & Reel|
|BC847BTT1G|1F|SC−75/SOT−416<br>(Pb−Free)||
|NSVBC847BTT1G*|1F|SC−75/SOT−416<br>(Pb−Free)|3,000 / Tape & Reel|
|BC847CTT1G|1G|SC−75/SOT−416<br>(Pb−Free)|3,000 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

*NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. 

**http://onsemi.com** 

**5** 

**BC847ATT1, BC847BTT1, BC847CTT1** 

## **PACKAGE DIMENSIONS** 

**SC−75/SOT−416** CASE 463 ISSUE F 

**==> picture [198 x 157] intentionally omitted <==**

**----- Start of picture text -----**<br>
eT −E−<br>2<br>_ 3 7 e −D−<br>1<br>b 3 PL<br>0.20 (0.008) M D<br>au HE 0.20 (0.008) E<br>g op<br>C<br>A<br>Lp L A1<br>**----- End of picture text -----**<br>


NOTES: 

|**DIM**|**MILLIMETERS**<br>es|**MILLIMETERS**<br>es|**MILLIMETERS**<br>es|**INCHES**<br>e~~e~~|**INCHES**<br>e~~e~~|**INCHES**<br>e~~e~~|
|---|---|---|---|---|---|---|
||**MIN**<br>es|**NOM**<br>es|**MAX**<br>es|**MIN**|**NOM**<br>e|**MAX**<br>e~~e~~|
|**A**|0.70|0.80|0.90|0.027|0.031|0.035|
|**A1**|0.00|0.05|0.10|0.000|0.002|0.004|
|**A1**<br>**b**|0.00<br>0.15|0.05<br>0.20|0.10<br>0.30|0.000<br>0.006|0.002<br>0.008|0.004<br>0.012|
|**b**<br>**C**<br>**D**<br>—=EEEEES|0.10<br>1.55<br>0.15<br>—=EEEEES|0.15<br>1.60<br>0.20<br>—=EEEEES|0.25<br>1.65<br>0.30<br>—=EEEEES|0.004<br>0.059<br>0.006<br>—=EEEEES|0.006<br>0.063<br>0.008<br>—=EEEEES|0.010<br>0.067<br>0.012<br>—=EEEEES|
|**D**<br>**E**<br>—=EEEEES|1.55<br>0.70<br>—=EEEEES|1.60<br>0.80<br>—=EEEEES|1.65<br>0.90<br>—=EEEEES|0.059<br>0.027<br>—=EEEEES|0.063<br>0.031<br>—=EEEEES|0.067<br>0.035<br>—=EEEEES|
|**e**|1.00 BSC|||0.04 BSC|||
|**L**|0.10|0.15|0.20|0.004|0.006|0.008|
|**HE**|0.10<br>1.50|0.15<br>1.60|0.20<br>1.70|0.004<br>0.061|0.006<br>0.063|0.008<br>0.065|



ON Semiconductor and the         are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf.  SCILLC reserves the right to make changes without further notice to any products herein.  SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.  All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.  SCILLC does not convey any license under its patent rights nor the rights of others.  SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.  Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.  SCILLC is an Equal Opportunity/Affirmative Action Employer.  This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

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Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Email** : orderlit@onsemi.com 

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**http://onsemi.com** 

**BC847ATT1/D** 

**6** 



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