BC847BFA-7B

**BC847BFA** 

**45V NPN SMALL SIGNAL TRANSISTOR IN DFN0806** 

## **Features** 

## **Mechanical Data** 

- BVCEO  > 45V 

- IC = 100mA High Collector Current 

- PD = 435mW Power Dissipation 

- 0.48mm[2] Package Footprint, 16 times smaller than SOT23 

- 0.4mm Height Package Minimizing Off-Board Profile 

- Complementary PNP Type BC857BFA 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

   - Case: X2-DFN0806-3 

   - Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

   - Terminals: Finish  NiPdAu, Solderable per MIL-STD-202, Method 208 **e4** 

   - Weight: 0.0008 grams (Approximate) 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

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X2-DFN0806-3  C<br>B<br>B C<br>E<br>E<br>Top View<br>Device Schematic<br>Top View  Bottom View  Device Symbol<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|---|---|
||||||
|**Product**|**Marking**|**Reel size(inches)**|**Tape width(mm)**|**Quantity per reel**|
|BC847BFA-7B|1F|7|8mm|10,000|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

X2-DFN0806-3 

**1F** 1F = Product Type Marking Code Top View Bar Denotes Base and Emitter Side 

## **Absolute Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|50|V|
|Collector-Emitter Voltage|VCEO|45|V|
|Emitter-Base Voltage|VEBO|6.0|V|
|Continuous Collector Current|IC|100|mA|
|Peak Pulse Collector Current|ICM|200|mA|



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BC847BFA Document number: DS36018 Rev. 2 - 2 

March 2015 © Diodes Incorporated 

**BC847BFA** Cd 

**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation(Note 5)|PD|435|mW|
|Thermal Resistance, Junction to Ambient(Note 5)|RJA|287|°C/W|
|Thermal Resistance, Junction to Lead(Note 6)|RJL|150|°C/W|
|Operatingand Storage and Temperature Range|TJ,TSTG|-55 to +150|C|



## **ESD Ratings** (Note 7) 

||||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|**JEDEC Class**|
|Electrostatic Discharge - Human Body Model|ESD HBM|4,000|V|3A|
|Electrostatic Discharge - Machine Model|ESD MM|200|V|B|



Notes: 5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink. 6. Thermal resistance from junction to solder-point (on the exposed collector pad). 

7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

## **Thermal Characteristics and Derating Information** 

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0.45<br>V<br>CE(sat) CATA EE EEE LTTE td] 0.40 aee<br>Limited<br>0.35<br>100m PAAT AN PEE RSEEEEEEFEEAH<br>AANAIAAAI 0.30 PARE.<br>DC 1s<br>PE NOAENE 0.25 ee<br>PTA TT TT 100ms WANA LIT Pt tT tT yt pe EAT Ty<br>0.20<br>> AE | 10ms ANG ll a<br>Aine (WW 0.15 PEE<br>1ms<br>10m Single Pulse \\| 0.10 PiPt || |tf |Thm| mT | ft tTEtTetT R  EEETNTTT To<br>Tamb=25°C EHa Ee 0.050.00 Pt EES‘N<br>10m 100m 1 10 0 20 40 60 80 100 120 140 160<br>VCE  Collector-Emitter Voltage (V)  Temperature (°C)<br>Safe Operating Area Derating Curve<br>300<br>275 T amb =25°C a a a 100 Single Pulse<br>250 T =25°C<br>225200175 BA D=0.5 rn A "AAPa=Z olfit AYe | BECNENTHEE a eeOooo Th amb TToi<br>150 A ff 10 TTR ETM CUTIE LTT EET TTA UT<br>125<br>100<br>75 San D=0.2 ee 7//AlllWi)AN Single Pulse HM |peCITE NpTMNT TE TET TT PTT<br>50 Ee D=0.05 TTT 1 TAM EEA SSN UTM TTA<br>250 pe 0 D=0.1 EA TTT LTT PEER HE COIS EE Ss<br>100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s) Pulse Width (s)<br>  Collector Current (A)<br>C<br>I<br> Max Power Dissipation (W)<br> Maximum Power (W)<br>Thermal Resistance (°C/W)<br>**----- End of picture text -----**<br>


## **Transient Thermal Impedance** 

## **Pulse Power Dissipation** 

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BC847BFA Document number: DS36018 Rev. 2 - 2 

March 2015 © Diodes Incorporated 

**BC847BFA** 

## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typical**|**Max**|**Unit**|**Test Condition**|
|**OFF CHARACTERISTICS**|||||||
|Collector-Base Breakdown Voltage|BVCBO|50|150||V|IC= 50µA,IB= 0|
|Collector-Emitter Breakdown Voltage|BVCES<br>~~es~~|50<br>~~ee~~|150<br>~~ee~~|<br>~~ee~~|~~ee~~|IC= 50µA,IB= 0|
|Collector-Emitter Breakdown Voltage(Note 8)<br>~~ee~~|BVCEO<br>~~ee~~<br>~~es~~|45<br>~~ee~~<br>~~ee~~|65<br>~~ee~~<br>~~ee~~|<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~|IC= 1mA,IB= 0<br>~~ee~~|
|Collector-Base Breakdown Voltage<br>~~ee~~|BVEBO<br>~~ee~~<br>~~es~~<br>~~es~~|6.0<br>~~ee~~<br>~~ee~~<br>~~ee~~|8.35<br>~~ee~~<br>~~ee~~<br>~~ee~~|<br>~~ee~~<br>~~ee~~<br>~~ee~~|V<br>~~ee~~<br>~~ee~~<br>~~ee~~|IE= 50µA,IC= 0<br>~~ee~~|
|Collector-Base Cut-Off Current<br>~~es~~|ICBO<br>~~es ~~<br>~~es~~<br>~~es~~|<br> ~~ee ~~<br>~~es~~<br>~~ee~~|<br> ~~ee ~~<br>~~es~~<br>~~ee~~|15<br> ~~ee ~~<br>~~es~~<br>~~ee~~|nA<br> ~~ee~~<br>~~es~~<br>~~ee~~|VCB= 40V<br>~~es~~|
|Collector-Emitter Cut-Off Current<br>~~es~~|ICES<br>~~es~~<br>~~es~~|<br>~~es~~<br>~~ee~~|<br>~~es~~<br>~~ee~~|15<br>~~es~~<br>~~ee~~|nA<br>~~es~~<br>~~ee~~|VCE= 40V<br>~~es~~|
|**ON CHARACTERISTICS**(Note 8)<br>~~es ee ee~~<br>~~eees~~|||||||
|DC Current Gain<br>~~es~~|hFE<br>~~es~~<br>~~ee~~<br>~~ee~~|<br>200<br>~~es~~<br>~~es~~<br>~~ee~~|220<br>260<br>~~es~~|<br>470<br>~~es~~|<br>~~es~~|IC=  10µA, VCE= 5.0V<br>IC=  2.0mA,VCE= 5.0V<br>~~es~~|
|Collector-Emitter Saturation Voltage<br>~~es~~|VCE(sat)<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|<br> ~~es~~<br>~~es~~<br>~~ee~~<br>~~es~~|50<br>122<br>~~es~~|125<br>300<br>~~es~~|mV<br>~~es~~|IC= 10mA, IB= 0.5mA<br>IC= 100mA,IB= 5.0mA<br>~~es~~|
|Base-Emitter Saturation Voltage<br>~~es~~|VBE(sat)<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|<br> ~~ee~~<br>~~es~~<br>~~es~~<br>~~ee~~|760<br>880<br>~~es~~|1000<br>1100<br>~~es~~|mV<br>~~es~~|IC= 10mA, IB= 0.5mA<br>IC= 100mA,IB= 5.0mA<br>~~es~~|
|Base-Emitter Voltage<br>~~es~~|VBE(on)<br>~~ee ~~<br>~~es~~<br>~~ee~~|580<br><br> ~~es~~<br>~~es~~<br>~~ee~~|650<br>725<br>~~es~~|750<br>800<br>~~es~~|mV<br>~~es~~|IC=  2.0mA, VCE=  5V<br>IC=  10mA,VCE=  5V<br>~~es~~|
|**SMALL SIGNAL CHARACTERISTICS**<br>~~ee~~<br>~~GO~~<br>~~GO~~|||||||
|Output Capacitance<br>~~CG~~|Cobo<br>~~CG~~|<br>~~CG~~<br>~~dG~~|1.5<br>~~CG~~<br>~~dG~~|<br>~~CG~~<br>~~GO~~<br>~~dG~~|pF<br>~~CG~~<br>~~GO~~|VCB= 10.0V,f = 1.0MHz,IE= 0<br>~~CG~~|
|Current Gain-Bandwidth Product<br>~~DO~~|fT<br>~~DO~~|100<br>~~DO~~<br>~~dG~~|170<br>~~DO~~<br>~~dG~~|<br>~~GO~~<br>~~DO~~<br>~~dG~~|MHz<br>~~GO~~<br>~~DO~~|VCE= 5V, IC= 10mA,<br>f = 100MHz<br>~~DO~~|



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BC847BFA Document number: DS36018 Rev. 2 - 2 

March 2015 © Diodes Incorporated 

**BC847BFA** 

**Typical Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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0.160.14 7 IB = 1.2mA ] IB = 1.4mA IB = 1.6mA IB = 1.8mA ——= IB = 2mA 450400350 0EH TA = 150°C VCE = 5V<br>0.12 SSS CE ee EEISSO<br>T A  = 100°C<br>————- IB = 1mA 300 I<br><== PEN<br>0.10 Ee IB = 0.8mA CT. CT NSN<br>0.08 E(Ea I B  = 0.6mA 250 EcotecPE TA = 25°C NTTNI<br>0.06 a=Aa IB = 0.4mA 200 PTTAEccISSNocrPNW<br>150<br>ea Co TA = -55°C ov<br>0.04 {—__[_ I B  = 0.2mA 100 ee =a<br>Free<br>0.02 i 0 eee<br>| 50 PETE EEE<br>0 PO 0 iA<br>0 1 2 3 4 5 1 10 100<br>VCE, COLLECTOR-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (mA)<br>Fig. 4 Typical Collector Current  Fig. 5 Typical DC Current Gain vs. Collector Current<br>vs. Collector-Emitter Voltage<br>0.20 LE ET 1 E-A——-—ee —— — EEee ee ee<br>0.18 I C /I B  = 10<br>0.16<br>a 02<br>0.14<br>eePOI ee / }<br>0.12<br>0.10 ee)0 a F 0.1 i IC/I TLR B = 100 “< VA<br>a ge<br>0.08 Pt TA |  = 150°C eA see I C /I B  = 50<br>T A  = 100°C<br>0.06 LETnyAA 74) oar IC/IB = 20 oe<br>ee, 2| rHee pHt<br>0.04 TA = 25°C IC/IB = 10<br>0.02 T A  = -55°C<br>PE<br>0 OO 0.01<br>1 10 100 1 10 100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Fig. 6 Typical Collector-Emitter Saturation Voltage Fig. 7 Typical Collector-Emitter Saturation Voltage<br>vs. Collector Current vs. Collector Current<br>1.0 1.1<br>VCE = 5V<br>HE ETN FF ELEiT | 1.0 AEE, EEa<br>0.9<br>0.8 | | La TA = -55 ° C —_ 0.9 ee|sil|<br>ill 4 pa pen<br>0.8 T A  = -55°C<br>Wee er<br>0.7<br>sania TA = 25°C 0.7 Te<br>0.6 | eet TA = 25°C ea<br>ee age te<br>0.6<br>0.5 Nea T A = 100°C 0.5 Hee TA = 100 ° C<br>0.4 Tei TA = 150°C 0.4 nt T A  = 150°C _<br>0.3 0.3<br>1 10 100 1 10 100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Fig. 8 Typical Base-Emitter Turn-On Voltage  Fig. 9 Typical Base-Emitter Saturation Voltage<br>vs. Collector Current vs. Collector Current<br>, BASE-EMITTER SATURATION VOLTAGE (V)<br>V<br>BE(SAT)<br>, COLLECTOR CURRENT (A)<br>IC<br>, DC CURRENT GAIN<br>h<br>FE<br>VOLTAGE (V)<br>, COLLECTOR-EMITTER<br>SATURATION<br>CE(SAT)<br>V<br>VOLTAGE (V)<br>, COLLECTOR-EMITTER<br>SATURATION<br>V<br>CE(SAT)<br>, BASE-EMITTER TURN-ON VOLTAGE (V)<br>V<br>BE(ON)<br>**----- End of picture text -----**<br>


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**BC847BFA** 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 

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A3<br>A1<br>A<br>Seating Plane<br>X2-DFN0806-3<br>Dim  Min  Max  Typ<br>D A  0.375 0.40 0.39<br>A1  0 0.05 0.02<br>e A3  -  -  0.10<br>b  0.10 0.20 0.15<br>D  0.55 0.65 0.60<br>D1  0.35 0.45 0.40<br>L (2x) E  0.75 0.85 0.80<br>E1  0.20 0.30 0.25<br>e  -  -  0.35<br>K b (2x) K  -  -  0.20<br>E L  0.20 0.30 0.25<br>All Dimensions in mm<br>E1<br>Pin#1<br>R0.075<br>D1<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

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X1<br>Y1<br>Y2<br>X (2x)<br>Y (2x)<br>C<br>X2<br>**----- End of picture text -----**<br>


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Value<br>Dimensions<br>(in mm)<br>C  0.350<br>X  0.200<br>X1  0.450<br>X2  0.550<br>Y  0.375<br>Y1  0.475<br>Y2  1.000<br>**----- End of picture text -----**<br>


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BC847BFA Document number: DS36018 Rev. 2 - 2 

March 2015 © Diodes Incorporated 

**BC847BFA** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2015, Diodes Incorporated 

**www.diodes.com** 

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BC847BFA Document number: DS36018 Rev. 2 - 2 

March 2015 © Diodes Incorporated