BC846CMTF

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October 2014<br>**----- End of picture text -----**<br>


## **BC846 / BC847 / BC848 / BC850 NPN Epitaxial Silicon Transistor** 

## **Features** 

- Switching and Amplifier Applications 

- Suitable for Automatic Insertion in Thick and Thin-film Circuits 

- Low Noise: BC850 

- Complement to BC856, BC857, BC858, BC859, and BC860 

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3<br>2<br>SOT-23<br>1<br>1. Base   2. Emitter   3. Collector<br>**----- End of picture text -----**<br>


## **Ordering Information**[(1)] 

|**Part Number**|**Marking**|**Package**|**Packing Method**|
|---|---|---|---|
|BC846AMTF|8AA|SOT-23 3L|Tape and Reel|
|BC846BMTF|8AB|SOT-23 3L|Tape and Reel|
|BC846CMTF|8AC|SOT-23 3L|Tape and Reel|
|BC847AMTF|8BA|SOT-23 3L|Tape and Reel|
|BC847BMTF|8BB|SOT-23 3L|Tape and Reel|
|BC847CMTF|8BC|SOT-23 3L|Tape and Reel|
|BC848BMTF|8CB|SOT-23 3L|Tape and Reel|
|BC848CMTF|8CC|SOT-23 3L|Tape and Reel|
|BC850AMTF|8EA|SOT-23 3L|Tape and Reel|
|BC850CMTF|8EC|SOT-23 3L|Tape and Reel|



## **Note:** 

1. Affix “-A,-B,-C” means hFE classification. Affix “-M” means SOT-23 package. Affix “-TF” means the tape and reel type packing. 

© 2002 Fairchild Semiconductor Corporation BC846 / BC847 / BC848 / BC850 Rev. 1.1.0 

www.fairchildsemi.com 

1 

## **Absolute Maximum Ratings** 

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. 

|**Symbol**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|
|VCBO|Collector-Base Voltage|BC846|80|V|
|||BC847 / BC850|50||
|||BC848|30||
|VCEO|Collector-Emitter Voltage|BC846|65|V|
|||BC847 / BC850|45||
|||BC848|30||
|VEBO|Emitter-Base Voltage|BC846 / BC847|6|V|
|||BC848 / BC850|5||
|IC|Collector Current (DC)||100|mA|
|TJ|Junction Temperature||150|°C|
|TSTG|Storage Temperature Range||-65 to +150|°C|



## **Thermal Characteristics**[(2)] 

Values are at TA = 25°C unless otherwise noted. 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|PD|Power Dissipation|310|mW|
||Derate Above 25°C|2.48|mW/°C|
|RθJA|Thermal Resistance, Junction-to-Ambient|403|°C/W|



## **Note:** 

2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 

© 2002 Fairchild Semiconductor Corporation BC846 / BC847 / BC848 / BC850 Rev. 1.1.0 

www.fairchildsemi.com 

2 

## **Electrical Characteristics**[(3)] 

Values are at TA = 25°C unless otherwise noted. 

**Symbol Parameter Conditions Min. Typ. Max. Unit** ~~a~~ ICBO Collector Cut-Off Current VCB = 30 V, IE = 0 15 nA hFE DC Current Gain VCE = 5 V, IC = 2 mA 110 800 Collector-Emitter Saturation IC = 10 mA, IB = 0.5 mA 90 250 VCE(sat) mV ~~a~~ Voltage IC = 100 mA, IB = 5 mA 200 600 IC = 10 mA, IB = 0.5 mA 700 VBE(sat) Collector-Base Saturation Voltage mV ~~SS~~ IC = 100 mA, IB = 5 mA 900 VCE = 5 V, IC = 2 mA 580 660 700 VBE(on) Base-Emitter On Voltage mV ~~a~~ VCE = 5 V, IC = 10 mA 720 fT Current Gain Bandwidth Product f = 100 MHzVCE = 5 V, IC = 10 mA, 300 MHz Cob Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz 3.5 6.0 pF ~~ee~~ Cib Input Capacitance VEB = 0.5 V, IC = 0, f = 1 MHz 9 pF BC846 / BC847 / BC848 VCE = 5 V, IC = 200 μ A, 2.0 10.0 Noise BC850 RG = 2 k Ω, f = 1 kHz 1.2 4.0 NF dB Figure BC850 VCE = 5 V, IC = 200 μ A, 1.4 3.0 ~~aohy”~~ RG = 2 k Ω, ~~CC~~ f = 30 to 15000 Hz ~~|~~ **Note:** 3. Pulse test: pulse width ≤ 300 μ s, duty cycle ≤ 2% **hFE Classification Classification A B C** hFE 110 ~ 220 200 ~ 450 420 ~ 800 ~~— a~~ 

© 2002 Fairchild Semiconductor Corporation BC846 / BC847 / BC848 / BC850 Rev. 1.1.0 

www.fairchildsemi.com 

3 

## **Typical Performance Characteristics** 

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100 10000<br>IB = 400 μ A VCE = 5V<br>80 a I B = 350 μ A<br>IB = 300 μ A<br>1000<br>60 L-— IB = 250 μ A<br>I B  = 200 μ A<br>40 —_—— I B  = 150 μ A<br>100<br>I B  = 100 μ A<br>20 =<br>I B  = 50 μ A<br>0 0 Seer 4 8 12 16 20 10 1 10 100 1000<br>VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT<br>Figure 1. Static Characteristic Figure 2. DC Current Gain<br>10000 100<br>IC = 10 IB V CE  = 2V<br>1000 VBE(sat) 10<br>100 1<br>V CE (sat)<br>10 0.1<br>1 10 100 1000 0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE<br>Figure 3. Base-Emitter Saturation Voltage and  Figure 4. Base-Emitter On Voltage<br>Collector-Emitter Saturation Voltage<br>100 1000<br>f=1MHz<br>VCE=5V<br>10 100<br>1 10<br>0.1 1<br>1 10 100 1000 0.1 1 10 100<br>VCB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT<br>Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product<br>, DC CURRENT GAIN<br>FE<br>[mA], COLLECTOR CURRENTIC h<br>(sat)[V], SATURATION VOLTAGE<br>CE<br>[mA], COLLECTOR CURRENTIC<br>(sat), V<br>BE<br>V<br>[pF], CAPACITANCE<br>ob<br>C<br>[MHz], CURRENT GAIN-BANDWIDTH PRODUCTfT<br>**----- End of picture text -----**<br>


© 2002 Fairchild Semiconductor Corporation BC846 / BC847 / BC848 / BC850 Rev. 1.1.0 

www.fairchildsemi.com 

4 

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0.95<br>2.92±0.20<br>3<br>1.40<br>1.30 [+0.20] 2.20<br>-0.15<br>1 2<br>(0.29) 0.60<br>0.37<br>0.95<br>0.20 A B 1.00<br>1.90 1.90<br>LAND PATTERN<br>RECOMMENDATION<br>1.20 MAX SEE DETAIL A<br>(0.93) 0.10<br>0.00<br>0.10 C<br>C<br>2.40±0.30<br>NOTES: UNLESS OTHERWISE SPECIFIED<br>GAGE PLANE<br>   A)  REFERENCE JEDEC REGISTRATION<br>TO-236, VARIATION AB, ISSUE H.<br>0.23    B)  ALL DIMENSIONS ARE IN MILLIMETERS.<br>0.08    C)  DIMENSIONS ARE INCLUSIVE OF BURRS,<br>0.25        MOLD FLASH AND TIE BAR EXTRUSIONS.<br>   D)  DIMENSIONING AND TOLERANCING PER<br>       ASME Y14.5M - 1994.<br>0.20 MIN<br>SEATING    E)  DRAWING FILE NAME: MA03DREV10<br>(0.55) PLANE<br>**----- End of picture text -----**<br>


- B)  ALL DIMENSIONS ARE IN MILLIMETERS. 

- C)  DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. 

- D)  DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. 

SCALE: 2X 

## ~~—~~ 

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## **PRODUCT STATUS DEFINITIONS** 

|**Definition of Terms**|||
|---|---|---|
|**Datasheet Identification**|**Product Status**|**Definition**|
|Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications may change<br>in anymanner without notice.|
|Preliminary|First Production|Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild<br>Semiconductor reserves the right to make changes at anytime without notice to improve design.|
|No Identification Needed|Full Production|Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make<br>changes at anytime without notice to improve the design.|
|Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.<br>The datasheet is for reference information only.|



Rev. I72 

© Fairchild Semiconductor Corporation 

www.fairchildsemi.com