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BC640TA
Bipolar (BJT) Single Transistor, PNP, 80 V, 500 mA, 1.5 W, TO-92, Through Hole
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:100MHz; Power Dissipation Pd:1.5W; DC Collector Current:-500mA; DC Current Gain hFE:25hFE; T
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Qualification: -
- Power Dissipation: 1.5W
- Transistor Mounting: Through Hole
- Transistor Polarity: PNP
- Transition Frequency: 100MHz
- Transistor Case Style: TO-92
- DC Current Gain hFE Min: 25hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 500mA
- Collector Emitter Voltage Max: 80V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.109 € |
| Current stock | 1000+ |
| Lead time | 7 days |
Datasheet
## Final Product/Process Change Notification Document #:FPCN25225X Issue Date:02 Aug 2023 |**Title of Change:**<br>Wafer fab transfer from JS foundry, Japan to onsemi ISMF, Malaysia for small signal bipolar<br>junction transistor products.<br>Top metal standardization to AlSi and wire change from Au to Pd coated Cu for SOT23 and<br>SC70 packages.<br>**Proposed First Ship date:**<br>09 Nov 2023 or earlier if approved by customer<br>**Contact Information:**<br>Contact your local onsemi Sales Office orHiroshi.Koizumi@onsemi.com<br>~~re~~<br>~~eS~~| |---| |**PCN Samples Contact:**<br>Contact your local onsemi Sales Office.<br>Sample requests are to be submitted no later than 30 days from the date of first notification,<br>Initial PCN or Final PCN, for this change.<br>Samples delivery timing will be subject to request date, sample quantity and special customer<br>packing/label requirements.<br>**Additional Reliability Data:**<br>Contact your local onsemi Sales Office orChangKit.Mok@onsemi.com<br>~~pf~~| |**Type of Notification:**<br>This is a Final Product/Process Change Notification (FPCN) sent to customers. FPCNs are issued<br>90 days prior to implementation of the change.<br>onsemi will consider this change accepted, unless an inquiry is made in writing within 30 days<br>of delivery of this notice. To do so, contact PCN.Support@onsemi.com.<br>~~rr~~| |**Marking of Parts/ Traceability of**<br>**Change:**<br>Product marking follows onsemi marking format / Changed material can be identified by lot<br>code.<br>~~es~~| |**Change Category:**<br>Wafer Fab Change, Assembly Change<br>**Change Sub-Category(s):**<br>Manufacturing Site Addition, Material Change<br>~~oo~~| |**Sites Affected:**| ~~a~~ **onsemi Sites External Foundry/Subcon Sites** onsemi Cebu, Philippines JCET, China ~~a~~ onsemi Leshan, China ~~a~~ onsemi Seremban, Malaysia ~~a~~ onsemi, ISMF Malaysia ~~a~~ **Description and Purpose:** onsemi is publishing this Product Change Notification in order to notify customers of the transfer of small signal bipolar junction transistor products produced in JS Foundry, Japan (former onsemi Niigata). The transfer stems from the onsemi Fab Liter strategy and the resulting sale of Niigata factory; the parts identified in this notification are currently sole sourced from this site and will be transferred to onsemi ISMF fab, Malaysia to ensure supply continuity. Included in the change are several bill of material changes to standardize BOM aligning to the existing onsemi BJT product family. These changes include top metal standardization to AlSi and wire change from Au to Pd coated Cu for SOT23 and SC70 packages. onsemi ISMF fab is an existing qualified manufacturing site for onsemi which certified with IATF 16949:2016. SOT23, SC70 ||**From**|**To**| |---|---|---| |**Wafer Fab**|JS foundry, Japan|onsemi ISMF, Malaysia| |**Backgrind/Backmetal**|JS foundry, Japan|onsemi ISMF, Malaysia| |**Top metal**|Al, AlSi|AlSi| |**Bond wire**|Au|Pd coated Cu/Au| Page 1 of 9 TEM001793 Rev. F Final Product/Process Change Notification Document #:FPCN25225X Issue Date:02 Aug 2023 In addition to the changes in the above table, the 4249-NB42102E/4249-NB42112B will also be transferred to JCET, China from onsemi Cebu, Philippines for Assembly and Final test site to standardize ATO site to other SOT23 parts. **4249-NB42102E/4249-NB42112 From To** onsemi Leshan, China onsemi Leshan, China **Assembly/Final test site** onsemi Cebu, Philippines JCET, China ~~Bs~~ **SOT223 From To Wafer Fab** JS foundry, Japan onsemi ISMF, Malaysia **Backgrind/Backmetal** JS foundry, Japan onsemi ISMF, Malaysia **Top metal** Al, AlSi AlSi ~~———_——~~ **TO92 From To** Phenitec Semiconductor, Japan **Wafer Fab** onsemi ISMF, Malaysia JS foundry, Japan Phenitec Semiconductor, Japan **Backgrind/Backmetal** onsemi ISMF, Malaysia JS foundry, Japan Al, AlSi (Phenitec Semiconductor, JS **Top metal** AlSi ~~—_—-~~ foundry) **SSOT3 From To Wafer Fab** JS foundry, Japan onsemi ISMF, Malaysia **Backgrind/Backmetal** JS foundry, Japan onsemi ISMF, Malaysia **Top metal** Al, AlSi AlSi ~~——~~ **NOTE: Part details is attached:** _To view attachments:_ _1. Download pdf copy of the PCN to your computer_ _2. Open the downloaded pdf copy of the PCN_ _3. Click on the paper clip icon available on the menu provided in the left/bottom portion of the screen to reveal the Attachment field_ _4. Then click on the attached file._ Page 2 of 9 TEM001793 Rev. F Final Product/Process Change Notification Document #:FPCN25225X Issue Date:02 Aug 2023 ## **Reliability Data Summary:** **QV DEVICE NAME: FSB560A RMS: S87865 / S87866 / S90424 PACKAGE: SSOT3** |**Test**|**Specification**|**Condition**|**Interval**|**Results**| |---|---|---|---|---| |High Temperature Reverse Bias|JESD22-A108|Ta=150°C, 100% max rated V|1008 hrs|0/308| |High Temperature Storage Life|JESD22-A103|Ta=150°C|1008 hrs|0/308| |Preconditioning|J-STD-020 /<br>JESD-A113|MSL 1 @ 260°C, Pre IOL, TC, uHAST, HAST for surface<br>mountpkgs only|-|0/1232| |Intermittent Operating Life|MIL-STD-750<br>(M1037)<br>AEC-Q101|Ta=+25°C, delta Tj=100°C<br>On/off =2 min|15,000<br>cyc|0/308| |Temperature Cycling|JESD22-A104|Ta= -55°C to +150°C|1000 cyc|0/308| |Highly Accelerated Stress Test|JESD22-A110|110°C, 85% RH, 17.7psia, bias|264 hrs|0/308| |Unbiased Highly Accelerated Stress<br>Test|JESD22-A118|130°C, 85% RH, 18.8psig, unbiased|96 hrs|0/308| |Resistance to Solder Heat|JESD22- B106|Ta = 265°C, 10 sec<br>Required for through hole devices only|-|0/40| **QV DEVICE NAME: NZT753 RMS: S87888 PACKAGE: SOT223** |**Test**|**Specification**|**Condition**|**Interval**|**Results**| |---|---|---|---|---| |High Temperature Reverse Bias|JESD22-A108|Ta=150°C, 100% max rated V|1008 hrs|0/231| |High Temperature Storage Life|JESD22-A103|Ta=150°C|1008 hrs|0/231| |Preconditioning|J-STD-020 /<br>JESD-A113|MSL 1 @ 260°C, Pre IOL, TC, uHAST, HAST for surface<br>mountpkgs only|-|0/693| |Intermittent Operating Life|MIL-STD-750<br>(M1037)<br>AEC-Q101|Ta=+25°C, delta Tj=100°C<br>On/off =2 min|15,000<br>cyc|0/231| |Temperature Cycling|JESD22-A104|Ta= -55°C to +150°C|1000 cyc|0/231| |Highly Accelerated Stress Test|JESD22-A110|110°C, 85% RH, 17.7psia, bias|264 hrs|0/77| |Unbiased Highly Accelerated<br>Stress Test|JESD22-A118|130°C, 85% RH, 18.8psig, unbiased|96 hrs|0/231| |Resistance to Solder Heat|JESD22- B106|Ta = 265°C, 10 sec<br>Required for through hole devices only|-|0/30| Page 3 of 9 TEM001793 Rev. F Final Product/Process Change Notification Document #:FPCN25225X Issue Date:02 Aug 2023 **QV DEVICE NAME: MMBTH81 RMS: L87893 PACKAGE: SOT23-3L** |**Test**|**Specification**|**Condition**|**Interval**|**Results**| |---|---|---|---|---| |High Temperature Reverse Bias|JESD22-A108|Ta=150°C, 100% max rated V|1008 hrs|0/77| |High Temperature Storage Life|JESD22-A103|Ta=150°C|1008 hrs|0/77| |Preconditioning|J-STD-020 /<br>JESD-A113|MSL 1 @ 260°C, Pre IOL, TC, uHAST, HAST<br>for surface mountpkgs only|-|0/308| |Intermittent Operating Life|MIL-STD-750<br>(M1037)<br>AEC-Q101|Ta=+25°C, delta Tj=100°C<br>On/off =2 min|15,000 cyc|0/77| |Temperature Cycling|JESD22-A104|Ta= -55°C to +150°C|1000 cyc|0/77| |Highly Accelerated Stress Test|JESD22-A110|110°C, 85% RH, 17.7psia, bias|264 hrs|0/77| |Unbiased Highly Accelerated Stress<br>Test|JESD22-A118|130°C, 85% RH, 18.8psig, unbiased|96 hrs|0/77| |Resistance to Solder Heat|JESD22- B106|Ta = 265°C, 10 sec<br>Required for through hole devices only|-|0/10| **QV DEVICE NAME: KSC3265YMTF RMS: S87883 / S87887 PACKAGE: SOT23-3L** |**Test**|**Specification**|**Condition**|**Interval**|**Results**| |---|---|---|---|---| |High Temperature Reverse Bias|JESD22-A108|Ta=150°C, 100% max rated V|1008 hrs|0/308| |High Temperature Storage Life|JESD22-A103|Ta=150°C|1008 hrs|0/308| |Preconditioning|J-STD-020 /<br>JESD-A113|MSL 1 @ 260°C, Pre IOL, TC, uHAST, HAST<br>for surface mountpkgs only|-|0/1232| |Intermittent Operating Life|MIL-STD-750<br>(M1037)<br>AEC-Q101|Ta=+25°C, delta Tj=100°C<br>On/off =2 min|15,000 cyc|0/308| |Temperature Cycling|JESD22-A104|Ta= -55°C to +150°C|1000 cyc|0/308| |Highly Accelerated Stress Test|JESD22-A110|110°C, 85% RH, 17.7psia, bias|264 hrs|0/308| |Unbiased Highly Accelerated Stress<br>Test|JESD22-A118|130°C, 85% RH, 18.8psig, unbiased|96 hrs|0/308| |Resistance to Solder Heat|JESD22- B106|Ta = 265°C, 10 sec<br>Required for through hole devices only|-|0/308| Page 4 of 9 TEM001793 Rev. F Final Product/Process Change Notification Document #:FPCN25225X Issue Date:02 Aug 2023 **QV DEVICE NAME: KSA1013YBU RMS: S87880 PACKAGE: TO92** |**Test**|**Specification**|**Condition**|**Interval**|**Results**| |---|---|---|---|---| |High Temperature Reverse Bias|JESD22-A108|Ta=150°C, 100% max rated V|1008 hrs|0/231| |High Temperature Storage Life|JESD22-A103|Ta=150°C|1008 hrs|0/231| |Intermittent Operating Life|MIL-STD-750<br>(M1037)<br>AEC-Q101|Ta=+25°C, delta Tj=100°C<br>On/off =2 min|15,000 cyc|0/231| |Temperature Cycling|JESD22-A104|Ta= -55°C to +150°C|1000 cyc|0/231| |Highly Accelerated Stress Test|JESD22-A110|110°C, 85% RH, 17.7psia, bias|264 hrs|0/231| |Unbiased Highly Accelerated Stress Test|JESD22-A118|130°C, 85% RH, 18.8psig, unbiased|96 hrs|0/231| |Resistance to Solder Heat|JESD22- B106|Ta = 265°C, 10 sec<br>Required for through hole devices only|-|0/308| **QV DEVICE NAME: 4249-NB42102E RMS: L87896 / L87898 PACKAGE: SOT23-3L** |**Test**|**Specification**|**Condition**|**Interval**|**Results**| |---|---|---|---|---| |High Temperature Reverse Bias|JESD22-A108|Ta=150°C, 100% max rated V|1008 hrs|0/154| |High Temperature Storage Life|JESD22-A103|Ta=150°C|1008 hrs|0/154| |Preconditioning|J-STD-020 /<br>JESD-A113|MSL 1 @ 260°C, Pre IOL, TC, uHAST, HAST<br>for surface mountpkgs only|-|0/616| |Intermittent Operating Life|MIL-STD-750<br>(M1037)<br>AEC-Q101|Ta=+25°C, delta Tj=100°C<br>On/off =2 min|15,000 cyc|0/154| |Temperature Cycling|JESD22-A104|Ta= -55°C to +150°C|1000 cyc|0/154| |Highly Accelerated Stress Test|JESD22-A110|110°C, 85% RH, 17.7psia, bias|264 hrs|0/154| |Unbiased Highly Accelerated Stress<br>Test|JESD22-A118|130°C, 85% RH, 18.8psig, unbiased|96 hrs|0/154| |Resistance to Solder Heat|JESD22- B106|Ta = 265°C, 10 sec<br>Required for through hole devices only|-|0/154| Page 5 of 9 TEM001793 Rev. F Final Product/Process Change Notification Document #:FPCN25225X Issue Date:02 Aug 2023 **QV DEVICE NAME: FJT44TF RMS: S87878 PACKAGE: SOT223** |**Test**|**Specification**|**Condition**|**Interval**|**Results**| |---|---|---|---|---| |High Temperature Reverse Bias|JESD22-A108|Ta=150°C, 100% max rated V|1008 hrs|0/77| |High Temperature Storage Life|JESD22-A103|Ta=150°C|1008 hrs|0/77| |Preconditioning|J-STD-020 /<br>JESD-A113|MSL 1 @ 260°C, Pre IOL, TC, uHAST, HAST<br>for surface mountpkgs only|-|0/308| |Intermittent Operating Life|MIL-STD-750<br>(M1037)<br>AEC-Q101|Ta=+25°C, delta Tj=100°C<br>On/off =2 min|15,000 cyc|0/77| |Temperature Cycling|JESD22-A104|Ta= -55°C to +150°C|1000 cyc|0/77| |Highly Accelerated Stress Test|JESD22-A110|110°C, 85% RH, 17.7psia, bias|264 hrs|0/77| |Unbiased Highly Accelerated Stress<br>Test|JESD22-A118|130°C, 85% RH, 18.8psig, unbiased|96 hrs|0/77| |Resistance to Solder Heat|JESD22- B106|Ta = 265°C, 10 sec<br>Required for through hole devices only|-|0/10| ## **Electrical Characteristics Summary:** Electrical characteristics are not impacted. ## **List of Affected Parts:** _**Note:** Only the standard (off the shelf) part numbers are listed in the parts list. Any custom parts affected by this PCN are shown in the customer specific PCN addendum in the PCN email notification, or on the_ _**PCN Customized Portal.**_ |**Part Number**|**Qualification Vehicle**| |---|---| |FSB649|FJT44TF, FSB560A| |FZT649|FJT44TF, NZT753| |FZT790A|NZT753| |NZT560A|FJT44TF, NZT753| |NZT902|FJT44TF, NZT753| |MMBTH81|MMBTH81| |MMBT100|FJT44TF, KSC3265YMTF| |MMBTA28|FJT44TF, FSB560A| |MPSA29|FJT44TF, KSA1013YBU| |MPSA29-D26Z|FJT44TF, KSA1013YBU| Page 6 of 9 TEM001793 Rev. F Final Product/Process Change Notification Document #:FPCN25225X ONSEM. Issue Date:02 Aug 2023 PZTA28 FJT44TF, NZT753 PZTA29 FJT44TF, NZT753 ~~Ge~~ BC63916-D27Z FJT44TF, KSA1013YBU ~~Ge~~ BC63916-D74Z FJT44TF, KSA1013YBU ~~Ge~~ BCP54 FJT44TF, NZT753 ~~Ge~~ BCP55 FJT44TF, NZT753 ~~Ge~~ BC516-D27Z KSA1013YBU, KSC3265YMTF ~~Ge~~ NZT753 NZT753 ~~Ge~~ NZT605 FJT44TF, NZT753 ~~a G~~ NZT7053 FJT44TF, NZT753 ~~Ge~~ BC517-D74Z 4249-NB42102E, KSA1013YBU ~~Ge~~ FSB660A KSA1013YBU, FSB560A ~~Ge~~ MPS751 KSA1013YBU ~~Ge~~ MPS751-D26Z KSA1013YBU ~~a G~~ NZT660 NZT753 ~~Ge~~ NZT660A NZT753 ~~Ge~~ FSB560 FJT44TF, FSB560A ~~Ge~~ FSB560A FSB560A ~~Ge~~ NZT560 FJT44TF, NZT753 ~~Ge~~ MMBT5179 4249-NB42102E ~~Ge~~ KSA928AYTA KSA1013YBU ~~Ge~~ KSC2328AYBU FJT44TF, KSA1013YBU ~~Ge~~ KSC2328AYTA FJT44TF, KSA1013YBU ~~Ge~~ FJT44KTF FJT44TF, NZT753 ~~Ge~~ FJT44TF FJT44TF ~~Ge~~ KSP44BU FJT44TF, KSA1013YBU ~~Ge~~ KSP44TA FJT44TF, KSA1013YBU ~~Ge~~ KSP44TF FJT44TF, KSA1013YBU ~~Ge~~ FJV1845FMTF FJT44TF, KSC3265YMTF ~~a~~ FJV992FMTF KSA1013YBU, KSC3265YMTF ~~aG~~ FJX992TF KSA1013YBU, KSC3265YMTF ~~a~~ KSA992FATA KSA1013YBU, KSC3265YMTF ~~aG~~ KSA992FBTA KSA1013YBU, KSC3265YMTF ~~Ge~~ KSA992FBU KSA1013YBU, KSC3265YMTF ~~a G Sf~~ TEM001793 Rev. F Page 7 of 9 |KSA992FTA<br>~~Sf~~|KSA1013YBU, KSC3265YMTF<br>~~Sf~~| |---|---| |KSC1845FTA<br>~~Sf~~<br>~~Ge~~|FJT44TF, KSC3265YMTF<br>~~Sf~~<br>~~Ge~~| |KSA1015YTA<br>~~Sf~~<br>~~Ge~~|KSA1013YBU, KSC3265YMTF<br>~~Sf~~<br>~~Ge~~| |KSC1815YTA<br>~~Sf~~<br>~~Ge~~|FJT44TF, KSC3265YMTF<br>~~Sf~~<br>~~Ge~~| |KSD5041RTA<br>~~Sf~~<br>~~Ge~~|FJT44TF, KSA1013YBU<br>~~Sf~~<br>~~Ge~~| |KSD1616AGBU<br>~~Sf~~<br>~~Ge~~|FJT44TF, KSA1013YBU<br>~~Sf~~<br>~~Ge~~| |KSD1616AGTA<br>~~Sf~~<br>~~Ge~~|FJT44TF, KSA1013YBU<br>~~Sf~~<br>~~Ge~~| |KSD1616AYTA<br>~~Sf~~<br>~~Ge~~|FJT44TF, KSA1013YBU<br>~~Sf~~<br>~~Ge~~| |2N6517BU<br>~~Sf~~<br>~~a~~|FJT44TF, KSC3265YMTF<br>~~Sf~~<br>~~G~~| |2N6517TA<br>~~Sf~~<br>~~Ge~~|FJT44TF, KSC3265YMTF<br>~~Sf~~<br>~~Ge~~| |KSA1013YBU<br>~~Sf~~<br>~~Ge~~|KSA1013YBU<br>~~Sf~~<br>~~Ge~~| |KSA1013YTA<br>~~Sf~~<br>~~Ge~~|KSA1013YBU<br>~~Sf~~<br>~~Ge~~| |KSC2383OTA<br>~~Sf~~<br>~~Ge~~|FJT44TF, KSA1013YBU<br>~~Sf~~<br>~~Ge~~| |KSC2383YTA<br>~~Sf~~<br>~~a~~|FJT44TF, KSA1013YBU<br>~~Sf~~<br>~~G~~| |KSD471ACYBU<br>~~Sf~~<br>~~Ge~~|FJT44TF, KSC3265YMTF<br>~~Sf~~<br>~~Ge~~| |KSD471ACYTA<br>~~Sf~~<br>~~Ge~~|FJT44TF, KSC3265YMTF<br>~~Sf~~<br>~~Ge~~| |KSD471AYTA<br>~~Sf~~<br>~~Ge~~|FJT44TF, KSC3265YMTF<br>~~Sf~~<br>~~Ge~~| |KSA916YTA<br>~~Sf~~<br>~~Ge~~|KSA1013YBU<br>~~Sf~~<br>~~Ge~~| |BC636TA<br>~~Sf~~<br>~~Ge~~|KSA1013YBU, KSC3265YMTF<br>~~Sf~~<br>~~Ge~~| |BC638TA<br>~~Sf~~<br>~~Ge~~|KSA1013YBU, KSC3265YMTF<br>~~Sf~~<br>~~Ge~~| |BC640TA<br>~~Sf~~<br>~~Ge~~|KSA1013YBU, KSC3265YMTF<br>~~Sf~~<br>~~Ge~~| |KSA1298YMTF<br>~~Sf~~<br>~~Ge~~|KSA1013YBU, KSC3265YMTF<br>~~Sf~~<br>~~Ge~~| |KSA708CYTA<br>~~Sf~~<br>~~Ge~~|KSA1013YBU, KSC3265YMTF<br>~~Sf~~<br>~~Ge~~| |KSA708YBU<br>~~Sf~~<br>~~Ge~~<br>~~Ge~~|KSA1013YBU, KSC3265YMTF<br>~~Sf~~<br>~~Ge~~<br>~~Ge~~| |KSA708YTA<br>~~Sf~~<br>~~Ge~~<br>~~Ge~~|KSA1013YBU, KSC3265YMTF<br>~~Sf~~<br>~~Ge~~<br>~~Ge~~| |KSC1008CYTA<br>~~Sf~~<br>~~Ge~~<br>~~Ge~~|FJT44TF, KSC3265YMTF<br>~~Sf~~<br>~~Ge~~<br>~~Ge~~| |KSC1008YBU<br>~~Sf~~<br>~~Ge~~<br>~~Ge~~|FJT44TF, KSC3265YMTF<br>~~Sf~~<br>~~Ge~~<br>~~Ge~~| |KSC1008YTA<br>~~Sf~~<br>~~Ge~~<br>~~Ge~~|FJT44TF, KSC3265YMTF<br>~~Sf~~<br>~~Ge~~<br>~~Ge~~| |KSC3265YMTF<br>~~Sf~~<br>~~Ge~~<br>~~a~~|KSC3265YMTF<br>~~Sf~~<br>~~Ge~~<br>~~a~~<br>~~G~~| |SS8050CBU<br>~~Sf~~<br>~~a~~<br>~~a~~|FJT44TF, KSC3265YMTF<br>~~Sf~~<br>~~a~~<br>~~G~~<br>~~a~~<br>~~G~~| |SS8050CTA<br>~~Sf~~<br>~~a~~<br>~~a~~|FJT44TF, KSC3265YMTF<br>~~Sf~~<br>~~a~~<br>~~G~~<br>~~a~~<br>~~G~~| |SS8050DBU<br>~~Sf~~<br>~~a~~<br>~~a~~|FJT44TF, KSC3265YMTF<br>~~Sf~~<br>~~a~~<br>~~G~~<br>~~a~~<br>~~G~~| |SS8050DTA<br>~~Sf~~<br>~~a~~<br>~~Ge~~|FJT44TF, KSC3265YMTF<br>~~Sf~~<br>~~a~~<br>~~G~~<br>~~Ge~~| |SS8550CBU<br>~~Sf~~<br>~~Ge~~<br>~~a~~|KSA1013YBU, KSC3265YMTF<br>~~Sf~~<br>~~Ge~~<br>~~G~~| ## Final Product/Process Change Notification Document #:FPCN25225X Issue Date:02 Aug 2023 |SS8550CTA|KSA1013YBU, KSC3265YMTF|KSA1013YBU, KSC3265YMTF| |---|---|---| |SS8550DTA|KSA1013YBU, KSC3265YMTF|KSA1013YBU, KSC3265YMTF| |SS8550DBU|KSA1013YBU, KSC3265YMTF|KSA1013YBU, KSC3265YMTF| Page 9 of 9 TEM001793 Rev. F
Updated at March 24, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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