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BC559BTA

Bipolar (BJT) Single Transistor, PNP, 30 V, 100 mA, 500 mW, TO-92, Through Hole

  • Manufacturer: ONSEMI
  • Product type: Single Bipolar Junction Transistors - BJT
  • Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-30V; Transition Frequency ft:150MHz; Power Dissipation Pd:500mW; DC Collector Current:-100mA; DC Current Gain hFE:200hFE;
  • MSL: MSL 1 - Unlimited
  • SVHC: No SVHC (25-Jun-2025)
  • No. of Pins: 3Pins
  • Product Range: -
  • Qualification: -
  • Power Dissipation: 500mW
  • Transistor Mounting: Through Hole
  • Transistor Polarity: PNP
  • Transition Frequency: 150MHz
  • Transistor Case Style: TO-92
  • DC Current Gain hFE Min: 200hFE
  • Operating Temperature Max: 150°C
  • Continuous Collector Current: 100mA
  • Collector Emitter Voltage Max: 30V
Delivery and price
Units per pack 5000
Price 0.029 €
Current stock 1000+
Lead time 7 days
PDF File icon Datasheet

Updated at March 14, 2026