BC546BZL1G

Bipolar (BJT) Single Transistor, General Purpose, NPN, 65 V, 100 mA, 625 mW, TO-92, Through Hole

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Manufacturer: ONSEMI
Product type: Single Bipolar Junction Transistors - BJT
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:65V; Transition Frequency ft:150MHz; Power Dissipation Pd:625mW; DC Collector Current:100mA; DC Current Gain hFE:290hFE; Tra
No. of Pins: 3Pins
Product Range: -
Qualification: -
Power Dissipation: 625mW
Transistor Mounting: Through Hole
Transistor Polarity: NPN
Transition Frequency: 150MHz
Transistor Case Style: TO-92
DC Current Gain hFE Min: 290hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 100mA
Collector Emitter Voltage Max: 65V

Delivery and price
Units per pack	90000
Price	0.029 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at March 14, 2026