BC546BTF
Bipolar (BJT) Single Transistor, NPN, 65 V, 100 mA, 500 mW, TO-92, Through Hole
- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- No. of Pins: 3Pins
- Power Dissipation: 500mW
- DC Current Gain hFE: 200hFE
- Transistor Mounting: Through Hole
- Transistor Polarity: NPN
- DC Collector Current: 100mA
- Power Dissipation Pd: 500mW
- Transition Frequency: 300MHz
- Transistor Case Style: TO-92
- DC Current Gain hFE Min: 200hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 100mA
- Collector Emitter Voltage Max: 65V
- Collector Emitter Voltage V(br)ceo: 65V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.097 € |
| Current stock | 1000+ |
| Lead time | 7 days |
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November 2014<br>**----- End of picture text -----**<br>
## **BC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon Transistor**
## **Features**
- Switching and Amplifier
- High-Voltage: BC546, VCEO = 65 V
- Low-Noise: BC549, BC550
- Complement to BC556, BC557, BC558, BC559, and BC560
1 TO-92 1. Collector 2. Base 3. Emitter **Ordering Information** ~~OE~~ **Part Number Marking Package Packing Method** ~~eC~~ BC546ABU BC546A TO-92 3L ~~CO~~ Bulk ~~Ge~~ BC546ATA BC546A ~~CO~~ TO-92 3L ~~(~~ Ammo ~~Ge~~ BC546BTA BC546B TO-92 3L ~~GO~~ Ammo ~~eC~~ BC546BTF BC546B TO-92 3L Tape and Reel BC546CTA BC546C TO-92 3L Ammo ~~— <=CO~~ BC547ATA BC547A TO-92 3L Ammo ~~a ‘$MM =|) —E eG~~ BC547B BC547B TO-92 3L ~~CO~~ Bulk ~~pf~~ BC547BBU BC547B TO-92 3L Bulk ~~|~~ BC547BTA ~~88=3=—s~~ BC547B ~~cs tc~~ TO-92 3L ~~kw~~ Ammo ~~C(O~~ BC547BTF BC547B TO-92 3L Tape and Reel ~~pf~~ BC547CBU BC547C TO-92 3L Bulk BC547CTA BC547C TO-92 3L Ammo ~~OO i@ iM || pO~~ BC547CTFR BC547C TO-92 3L Tape and Reel BC548BU BC548 TO-92 3L Bulk ~~———_ )~ °° &;}| °°.» aN~~ BC548BTA BC548B TO-92 3L Ammo ~~a |[lll]~~ BC548CTA BC548C TO-92 3L Ammo ~~A | pf~~ BC549BTA BC549B TO-92 3L Ammo ~~GC~~ BC549BTF BC549B TO-92 3L Tape and Reel ~~se~~ BC549CTA BC549C ~~GG~~ TO-92 3L Ammo ~~eG~~ BC550CBU BC550C TO-92 3L Bulk BC550CTA BC550C TO-92 3L Ammo ~~ee GDCO~~
© 2002 Fairchild Semiconductor Corporation BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.1
www.fairchildsemi.com
1
## **Absolute Maximum Ratings**
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
|**Symbol**|**Parameter**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|---|
|VCBO|Collector-Base Voltage|BC546|80|V|
|||BC547 / BC550|50||
|||BC548 / BC549|30||
|VCEO|Collector-Emitter Voltage|BC546|65|V|
|||BC547 / BC550|45||
|||BC548 / BC549|30||
|VEBO|Emitter-Base Voltage|BC546 / BC547|6|V|
|||BC548 / BC549 / BC550|5||
|IC|Collector Current (DC)||100|mA|
|PC|Collector Power Dissipation||500|mW|
|TJ|Junction Temperature||150|°C|
|TSTG|Storage Temperature Range||-65 to +150|°C|
## **Electrical Characteristics**
Values are at TA = 25°C unless otherwise noted.
|**Symbol**|**Parameter**|**Parameter**|**Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|ICBO|Collector Cut-Off Current||VCB= 30 V, IE= 0|||15|nA|
|hFE|DC Current Gain||VCE= 5 V, IC= 2 mA|110||800||
|VCE(sat)|Collector-Emitter Saturation<br>Voltage||IC= 10 mA, IB= 0.5 mA||90|250|mV|
||||IC= 100 mA, IB= 5 mA||250|600||
|VBE(sat)|Base-Emitter Saturation Voltage||IC= 10 mA, IB= 0.5 mA||700||mV|
||||IC= 100 mA, IB= 5 mA||900|||
|VBE(on)|Base-Emitter On Voltage||VCE= 5 V, IC= 2 mA|580|660|700|mV|
||||VCE= 5 V, IC= 10 mA|||720||
|fT|Current Gain Bandwidth Product||VCE= 5 V, IC= 10 mA,<br>f = 100 MHz||300||MHz|
|Cob|Output Capacitance||VCB= 10 V, IE= 0, f = 1 MHz||3.5|6.0|pF|
|Cib|Input Capacitance||VEB= 0.5 V, IC= 0, f = 1 MHz||9||pF|
|NF|Noise<br>Figure|BC546 / BC547 / BC548|VCE= 5 V, IC= 200μA,<br>f = 1 kHz, RG= 2 kΩ||2.0|10.0|dB|
|||BC549 / BC550|||1.2|4.0||
|||BC549|VCE= 5 V, IC= 200μA,<br>RG= 2 kΩ,f = 30 to 15000 MHz||1.4|4.0||
|||BC550|||1.4|3.0||
## **hFE Classification**
|**hFE ClassificationFE ClassificationClassification**||||
|---|---|---|---|
|**Classification**|**A**|**B**|**C**|
|hFE|110 ~ 220|200 ~ 450|420 ~ 800|
© 2002 Fairchild Semiconductor Corporation BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.1
www.fairchildsemi.com
2
## **Typical Performance Characteristics**
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100 100<br>I B = 400 μ A V CE = 5V<br>80 I B = 350 μ A<br>I B = 300 μ A<br>10<br>60 er I B = 250 μ A<br>aeatee IB = 200 μ A Th<br>40 Veto I B = 150 μ A<br>1<br>IB = 100 μ A<br>20 |ane<br>I B = 50 μ A<br>0 PEE 0.1<br>0 2 4 6 8 10 12 14 16 18 20 0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>VCE[V], COLLECTOR-EMITTER VOLTAGE VBE[V], BASE-EMITTER VOLTAGE<br>Figure 1. Static Characteristic Figure 2. Transfer Characteristic<br>10000<br>V CE = 5V IC = 10 IB<br>1000<br>1000 VBE(sat)<br>100<br>100<br>10<br>VCE(sat)<br>1 1 10 100 1000 10 1 10 100 1000<br>IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT<br>Figure 3. DC Current Gain Figure 4. Base-Emitter Saturation Voltage and<br>Collector-Emitter Saturation Voltage<br>100 1000<br>f=1MHz VCE = 5V<br>IE = 0<br>10 100<br>1 10<br>0.1 1<br>1 10 100 1000 0.1 1 10 100<br>VCB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT<br>Figure 5. Output Capacitance Figure 6. Current Gain Bandwidth Product<br>[mA], COLLECTOR CURRENTIC [mA], COLLECTOR CURRENTIC<br>, DC CURRENT GAINhFE (sat)[mV], SATURATION VOLTAGECE<br>(sat), V<br>BE<br>V<br>[pF], CAPACITANCE<br>ob<br>C<br>, CURRENT GAIN-BANDWIDTH PRODUCTfT<br>**----- End of picture text -----**<br>
© 2002 Fairchild Semiconductor Corporation BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.1
www.fairchildsemi.com
3
## **Physical Dimensions**
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**Figure 7. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type**
© 2002 Fairchild Semiconductor Corporation BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.1
www.fairchildsemi.com
4
## **Physical Dimensions** (Continued)
**Figure 8. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type**
© 2002 Fairchild Semiconductor Corporation BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.1
www.fairchildsemi.com
5
## **TRADEMARKS**
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. TO OBTAIN THE LATEST, MOST UP-TO-DATE DATASHEET AND PRODUCT INFORMATION, VISIT OUR WEBSITE AT HTTP://WWW.FAIRCHILDSEMI.COM. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
## **LIFE SUPPORT POLICY**
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain system whose failure to perform can be reasonably expected to life, and (c) whose failure to perform when properly used in cause the failure of the life support device or system, or to affect its accordance with instructions for use provided in the labeling, can be safety or effectiveness. reasonably expected to result in a significant injury of the user.
## **ANTI-COUNTERFEITING POLICY**
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
## **PRODUCT STATUS DEFINITIONS**
## **Definition of Terms**
|**Definition of Terms**|||
|---|---|---|
|**Datasheet Identification**|**Product Status**|**Definition**|
|Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications may change<br>in anymanner without notice.|
|Preliminary|First Production|Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild<br>Semiconductor reserves the right to make changes at anytime without notice to improve design.|
|No Identification Needed|Full Production|Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make<br>changes at anytime without notice to improve the design.|
|Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.<br>The datasheet is for reference information only.|
Rev. I72
© Fairchild Semiconductor Corporation
www.fairchildsemi.com
Updated at February 9, 2023
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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