# Bipolar (BJT) Single Transistor, NPN, 60 V, 1 A, 3.7 W, TO-39, Through Hole
**URL**: https://novapart.co/products/BC141-16/bipolar-bjt-single-transistor-npn-60-v-1-a-37-w-to
**SKU**: BC141-16
**Manufacturer**: STMICROELECTRONICS
**Price**: €0.4280
**Stock**: 10+
## Description
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:50MHz; Power Dissipation Pd:3.7W; DC Collector Current:1A; DC Current Gain hFE:30hFE; Transistor
## Specifications
| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 3.7W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | NPN |
| Transition Frequency | 50MHz |
| Transistor Case Style | TO-39 |
| Dc Current Gain Hfe Min | 30hFE |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 1A |
| Collector Emitter Voltage Max | 60V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2344068/)
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®
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## **BC141-16**
## GENERAL PURPOSE TRANSISTOR
## **DESCRIPTION**
The BC141-16 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. It is particularly designed for audio amplifiers and switching application up to 1A.
The complementary PNP type is the BC161-16.
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**TO-39**
## **INTERNAL SCHEMATIC DIAGRAM**
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## **ABSOLUTE MAXIMUM RATINGS**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VCBO|Collector-Base Voltage(IE= 0)|100|V|
|VCEO|Collector-Emitter Voltage(IB= 0)|60|V|
|VEBO|Emitter-Base Voltage(IC= 0)|7|V|
|IC|Collector Current|1|A|
|IB|Base Current|0.1|A|
|Ptot|Total Dissipation at Tamb ≤25oC
at TC ≤25oC|0.65
3.7|W
W|
|Tstg|Storage Temperature|-55 to 175|oC|
|Tj|Max. OperatingJunction Temperature|175|oC|
1/5
January 2003
**BC141-16**
## **THERMAL DATA**
|**THERMAL**|**DATA**|**DATA**|||||
|---|---|---|---|---|---|---|
|Rthj-case
Rthj-amb|Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Ambient Max||35
200|||oC/W
oC/W|
|**ELECTRICAL CHARACTERISTICS**(Tcase= 25oC unless otherwise specified)|||||||
|**Symbol**|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|ICES|Collector Cut-off
Current (VBE= 0)|VCE= 60 V
VCE= 60 V TC= 150oC|||100
100|nA
µA|
|V(BR)CBO∗|Collector-Base
Breakdown Voltage
(IE= 0)|IC= 100µA|100|||V|
|V(BR)CEO∗|Collector-Emitter
Breakdown Voltage
(IB= 0)|IC= 30 mA|60|||V|
|V(BR)EBO∗|Emitter-Base
Breakdown Voltage
(IC= 0)|IE= 100µA|7|||V|
|VCE(sat)∗|Collector-Emitter
Saturation Voltage|IC= 100 mA IB= 10 mA
IC= 500 mA IB= 50 mA
IC= 1 A IB= 100 mA||0.1
0.35
0.6|1|V
V
V|
|VBE(on)∗|Base-Emitter On
Voltage|IC= 1 A VCE= 1 V||1.25|1.8|V|
|hFE∗|DC Current Gain|IC= 100µA VCE= 1 V
IC= 100 mA VCE= 1 V
IC= 1 A VCE= 1 V|100|90
160
30|250||
|fT|Transition Frequency|IC= 50 mA VCE= 10 V|50|||MHz|
|CCBO|Collector-Base
Capacitance|IE= 0 VCB= 5 V f = 1MHz||12|25|pF|
|ton|Turn-on Time|IC= 100 mA IB1= 5 mA|||250|ns|
|toff|Turn-off Time|IC= 100 mA IB1= IB2= 5 mA|||850|ns|
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
2/5
**BC141-16**
## Collector-emitter Saturation Voltage.
DC Curent Gain.
## Base-emitter Voltage.
Transiition Frequency.
3/5
**BC141-16**
## **TO-39 MECHANICAL DATA**
|**DIM.**|**mm**|**mm**|**mm**|**inch**|**inch**|**inch**|
|---|---|---|---|---|---|---|
||**MIN.**|**TYP.**|**MAX.**|**MIN.**|**TYP.**|**MAX.**|
|A|12.7|||0.500|||
|B|||0.49|||0.019|
|D|||6.6|||0.260|
|E|||8.5|||0.334|
|F|||9.4|||0.370|
|G|5.08|||0.200|||
|H|||1.2|||0.047|
|I|||0.9|||0.035|
|L|45o(typ.)||||||
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D A
G
I
H
L
P008B
F E
B
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4/5
**BC141-16**
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics
- © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
**http://www.st.com**
5/5
## Links
- [View this product on Novapart](https://novapart.co/products/BC141-16/bipolar-bjt-single-transistor-npn-60-v-1-a-37-w-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/stmicroelectronics/bc141-16/transistor-npn-100v-1a-to-39/dp/2344068)
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