# Power MOSFET, P Channel, 60 V, 100 A, 0.0044 ohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2825142RL/)

**URL**: https://novapart.co/products/BBS3002-DL-1E/power-mosfet-p-channel-60-v-100-a-00044-ohm-to-263
**SKU**: BBS3002-DL-1E
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.6600
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Channel Type | P Channel |
| Power Dissipation | 90W |
| Drain Source On State Resistance | 0.0044ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2825142RL/)

**Ordering number : ENA1357C** 

## **BBS3002** 

## **P-Channel Power MOSFET –60V, –100A, 5.8m** Ω **, TO-263-2L/TO-263** 

## **Features** 

• ON-resistance  RDS(on)1=4.4mΩ (typ.) 

• 4V drive 

http://onsemi.com 

> **TO-263** 

- Input capacitance  Ciss=13200pF (typ.) 

## **Specifi cations** 

## **Absolute Maximum Ratings** at Ta=25°C 

|**Absolute Maximum Ratingsgss**at Ta=25°C|at Ta=25°C||||
|---|---|---|---|---|
|Parameter|Symbol|Conditions|Ratings|Unit|
|Drain to Source Voltage|VDSS||--60|V|
|Gate to Source Voltage|VGSS||±20|V|
|Drain Current(DC)|ID||--100|A|
|Drain Current(Pulse)|IDP|PW≤10μs, dutycycle≤1%|--400|A|
|Allowable Power Dissipation|PD|Tc=25°C|90|W|
|Channel Temperature|Tch||150|°C|
|Storage Temperature|Tstg||--55 to +150|°C|
|Avalanche Energy (Single Pulse)*1|EAS||340|mJ|
|Avalanche Current *2|IAV||--60|A|



Note : * 1 VDD=--30V, L=100μH, IAV=--60A (Fig.1) 

* 2 L≤100μH, Single pulse 

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

**Electrical Characteristics** at Ta=25°C 

|**Electrical Characteristics **at Ta=25°C|at Ta=25°C||||||
|---|---|---|---|---|---|---|
|Parameter<br>~~re~~|Symbol<br>~~re~~|Conditions<br>~~re~~|Ratings<br>~~re~~|||Unit<br>~~re~~|
||||min<br>~~re~~|typ<br>~~re~~|max<br>~~re~~||
|Drain to Source Breakdown Voltage<br>~~re~~<br>~~———~~|V(BR)DSS<br>~~re~~|ID=--1mA, VGS=0V<br>~~re~~|--60<br>~~re~~|~~re~~|~~re~~|V<br>~~re~~|
|Zero-Gate Voltage Drain Current<br>~~re~~<br>~~———~~|IDSS<br>~~re~~|VDS=--60V, VGS=0V<br>~~re~~|~~re~~|~~re~~|--1<br>~~re~~|μA<br>~~re~~|
|Gate to Source Leakage Current<br>~~———~~|IGSS|VGS=±16V, VDS=0V|||±10|μA|
|Cutoff Voltage<br>~~———~~|VGS(off)|VDS=--10V, ID=--1mA|--1.2||--2.6|V|
|Forward Transfer Admittance<br>~~———~~|| yfs||VDS=--10V, ID=--50A|54|90||S|
|Static Drain to Source On-State Resistance<br>~~———~~<br>~~—~~|RDS(on)1|ID=--50A, VGS=--10V<br>~~==~~|~~==~~|4.4<br>~~==~~|5.8<br>~~==~~|mΩ<br>~~==~~|
||RDS(on)2|ID=--50A, VGS=--4V<br>~~==~~|~~==~~|6.4<br>~~==~~|9.0<br>~~==~~|mΩ<br>~~==~~|
|Input Capacitance<br>~~———~~<br>~~—~~|Ciss|VDS=--20V, f=1MHz<br>~~==~~|~~==~~|13200<br>~~==~~|~~==~~|pF<br>~~==~~|
|Output Capacitance<br>~~—~~|Coss||~~==~~|1300<br>~~==~~|~~==~~|pF<br>~~==~~|
|Reverse Transfer Capacitance<br>~~—~~|Crss||~~==~~|950<br>~~==~~|~~==~~|pF<br>~~==~~|
|Turn-ON Delay Time|td(on)|See Fig.2||95||ns|
|Rise Time|tr|||1000||ns|
|Turn-OFF Delay Time|td(off)|||800||ns|
|Fall Time|tf|||820||ns|
|Total Gate Charge<br>~~—~~|Qg<br>~~——~~|VDS=--30V, VGS=--10V, ID=--100A<br>~~——~~|~~—~~|280<br>~~—~~|~~—~~|nC<br>~~—~~|
|Gate to Source Charge<br>~~—~~|Qgs<br>~~——~~||~~—~~|50<br>~~—~~|~~—~~|nC<br>~~—~~|
|Gate to Drain “Miller” Charge<br>~~—~~|Qgd<br>~~——~~||~~—~~|55<br>~~—~~|~~—~~|nC<br>~~—~~|
|Diode Forward Voltage<br>~~—~~|VSD<br>~~——~~|IS=--100A, VGS=0V<br>~~——~~|~~—~~|--1.0<br>~~—~~|--1.5<br>~~—~~|V<br>~~—~~|



## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 6 of this data sheet. 

Semiconductor Components Industries, LLC, 2013 **September, 2013** 

91113 TKIM TC-00002965/60612 TKIM/12512 TKIM TC-00002684/  No. A1357-1/6 N1208QA MSIM TC-00001708 

**BBS3002** 

**==> picture [483 x 737] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID  --  VDS ID  --  VGS<br>--200 --200<br>Tc=25°C VDS= --10V<br>--180 --180<br>TTT YA TT e e<br>--140 Po fF --140 eee (ee<br>--160 --160<br>--120 neNA /72neee --120 ee a<br>--100 --100<br>YL ae ee<br>--80 --80<br>--60 >/ --60 tf<br>--40 fo | VGS= --3V | --40 pe<br>--20 --20<br>0 | 4 Se 0 aa J<br>0 Ar --0.2 --0.4 tft --0.6  rrrry --0.8 --1.0 --1.2 --1.4 --1.6 yy --1.8 --2.0 0 ey --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0<br>Drain to Source Voltage, VDS  --  V IT14173 Gate to Source Voltage, VGS  --  V IT14174<br>RDS(on)  --  VGS RDS(on)  --  Tc<br>20 12<br>ID= --50A Single pulse<br>18 TTT Ttt Single pulse<br>10<br>16<br>SCE pti tt<br>14<br>ts 8 Pf | | 4<br>12<br>10 ns 6 a =<br>8<br>4<br>6 PRCEREEE} = Eee er<br>nee Fae aGnn<br>4<br>SS SSE 2 Thi<br>2 FEE | ty |<br>0 a 0 ERR<br>--2 --3 --4 --5 --6 --7 --8 --9 --10 --50 --25 0 25 50 75 100 125 150<br>Gate to Source Voltage, VGS  --  V IT14175 Case Temperature, Tc  --  °C IT14176<br>3 | yfs  |   --  ID --1K IS  --  VSD<br>2 [TT Ty Tet VDS= --10V 5 [7] 3 VGS=0V ee<br>2 Single pulse<br>--100<br>100 FATT | EE<br>5 [7]<br>7 3<br>5 2<br>--10<br>3 SESSeeee 5 [7] e/aStSf<br>3<br>2 | 2 f<br>| | tt ||| --1.0 ——_—————<br>10 5 [7] 3<br>7 2<br>--0.1<br>5<br>5 [7]<br>3 FAA Ee EE 32 ff<br>2 Broo} --0.01 Eafefi<br>5 [7]<br>1.0 ARS 32 =<br>7 LP tt Ty ty tt tet ft ty --0.001 AFF<br>--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2<br>Drain Current, ID  --  A IT14177 Diode Forward Voltage, VSD  --  V IT17199<br>SW Time  --  ID Ciss,  Coss,  Crss  --  VDS<br>5 3<br>VDD= --30V f=1MHz<br>3 VGS= --10V 2<br>2<br>Ca LTTEHy 10000 aeee<br>1000 Pee 7 CoE<br>7 NRE. 5 \ a a ee<br>5<br>SS eee Ae 3 \<br>3<br>CPP 2 ee<br>2<br>100 PEEee td(on) eeeee 1000 SS=~<br>7 7<br>5 P| tT e_ tit Tt} yet te fy 5 ee<br>--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 0 --5 --10 --15 --20 --25 --30<br>Drain Current, ID  --  A IT14179 Drain to Source Voltage, VDS  --  V IT14180<br>tf<br>25°C<br> --25°C<br>Ciss<br>Tc=75°C<br>td(off)<br>Crss<br>Coss<br>--4V<br>D= --50A<br>VGS= --10V, I<br>tr<br>D= --50A<br>VGS= --4V, I<br>°C<br>25<br>°C<br>75<br>°C<br>Tc= --25<br>--6V<br>--8V<br>--10V<br>25°C<br>--25°C<br>Tc=75°C<br>25°C<br>Tc=75°C °C<br>--25<br>°C<br>25<br>°C<br>75<br>°C<br>Tc= --25<br>Drain Current, ID  --  A Drain Current, ID  --  A<br>Ω Ω<br>Static Drain to Source On-State Resistance, RDS(on)  --  m Static Drain to Source On-State Resistance, RDS(on)  --  m<br>|  --  S<br>fs<br>y<br>|<br>Source Current, IS  --  A<br>Forward Transfer Admittance,<br>Ciss,  Coss,  Crss  --  pF<br>Switching Time, SW Time  --  ns<br>**----- End of picture text -----**<br>


No. A1357-2/6 

**BBS3002** 

**==> picture [475 x 368] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGS  --  Qg A S O<br>--10 --1000<br>VDS= --30V 75  IDP= --400A PW≤10μs<br>--9 ID= --100A 3<br>2<br>--8 ID= --100A<br>--100<br>--7 7<br>5<br>--6 3<br>2<br>--5 --10 Operation in<br>7 this area is<br>5<br>--4 3 limited by R DS (on).<br>2<br>--3<br>--1.0<br>--2 7<br>5<br>--1 32 Tc=25 ° C<br>0 --0.1 Single pulse<br>0 50 100 150 200 250 300 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100<br>Total Gate Charge, Qg  --  nC IT14181 Drain to Source Voltage, VDS  --  V IT14182<br>PD  --  Tc EAS  --  Ta<br>100 120<br>90<br>100<br>80<br>70<br>80<br>60<br>50 60<br>40<br>40<br>30<br>20<br>20<br>10<br>0 0<br>0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 150 175<br>Case Temperature, Tc  --  °C IT14183 Ambient Temperature, Ta  --  °C IT14184<br>100<br>μs<br>10<br>μs<br>1ms<br>10ms<br>100ms<br>DC operation<br>Drain Current, ID  --  A<br>Gate to Source Voltage, VGS  --  V<br>Allowable Power Dissipation, PD  --  W Avalanche Energy derating factor  --  %<br>**----- End of picture text -----**<br>


No. A1357-3/6 

**BBS3002** 

## **Package Dimensions** 

BBS3002-DL-1E 

## **D2PAK/TO-263-2L** 

**==> picture [60 x 97] intentionally omitted <==**

**----- Start of picture text -----**<br>
CASE 418AP<br>ISSUE O<br>Unit : mm<br>1: Gate<br>2: Drain<br>3: Source<br>4: Drain<br>**----- End of picture text -----**<br>


**Land Pattern Example** 

## **Packing Type: DL** 

## **Electrical Connection** 

**==> picture [194 x 98] intentionally omitted <==**

**----- Start of picture text -----**<br>
2, 4<br>DL<br>1<br>3<br>**----- End of picture text -----**<br>


No. A1357-4/6 

**BBS3002** 

## **Package Dimensions** 

BBS3002-TL-1E 

**==> picture [484 x 370] intentionally omitted <==**

**----- Start of picture text -----**<br>
Unit : mm<br>1: Gate<br>2: Drain<br>3: Source<br>4: Drain<br>Land Pattern Example<br>**----- End of picture text -----**<br>


## **Packing Type: TL** 

## **Electrical Connection** 

**==> picture [202 x 98] intentionally omitted <==**

**----- Start of picture text -----**<br>
2, 4<br>TL<br>1<br>3<br>**----- End of picture text -----**<br>


No. A1357-5/6 

**BBS3002** 

## **Ordering & Package Information** 

||||||||||
|---|---|---|---|---|---|---|---|---|
|**Ordering & Package Information**<br>**Marking**<br>Device<br>Package<br>Shipping<br>memo<br>BBS3002-DL-1E<br>TO-263-2L<br>SC-83, TO-263<br>800<br>pcs./reel<br>Pb-Free<br>BBS3002-TL-1E<br>TO-263<br>BS3002<br>LOT No.|||||||||
|Device|Package|Shipping|memo||||||
|||||BS3002<br>LOT No.|||||
|BBS3002-DL-1E|TO-263-2L<br>SC-83, TO-263|800<br>pcs./reel|Pb-Free||||||
|BBS3002-TL-1E|TO-263||||||||
||||||||||



## **Fig.1 Unclamped Inductive Switching Test Circuit** 

## **Fig.2 Switching Time Test Circuit** 

**==> picture [241 x 105] intentionally omitted <==**

**----- Start of picture text -----**<br>
D L<br>≥ 50 Ω<br>RG<br>G<br>BBS3002<br>0V 50 Ω S VDD<br>--10V<br>**----- End of picture text -----**<br>


**==> picture [158 x 161] intentionally omitted <==**

**----- Start of picture text -----**<br>
VIN VDD= --30V<br>0V<br>--10V<br>ID= --50A<br>VIN RL=0.6 Ω<br>D VOUT<br>PW=10 μ s<br>D.C. ≤ 1%<br>G<br>BBS3002<br>P.G 50 Ω S<br>**----- End of picture text -----**<br>


Note on usage : Since the BBS3002 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 

ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”  must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

PS No. A1357-6/6 



## Links

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- [Supplier page](https://es.farnell.com/en-ES/onsemi/bbs3002-dl-1e/mosfet-p-ch-60v-100a-to-263-3/dp/2825142RL)
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