# Small Signal Diode, Dual Common Anode, 70 V, 150 mA, 1.25 V, 6 ns, 500 mA

![Product image](https://novapart.co/image/farnell:2317712/)

**URL**: https://novapart.co/products/BAW56WT1G/small-signal-diode-dual-common-anode-70-v-150-ma
**SKU**: BAW56WT1G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Small Signal Diodes
**Price**: €0.0190
**Stock**: 10+
**Lead Time**: 120 days (indicative)

## Description

Diode Configuration:Dual Common Anode; Repetitive Reverse Voltage Vrrm Max:70V; Forward Current If(AV):150mA; Forward Voltage VF Max:1.25V; Reverse Recovery Time trr Max:6ns; Forward

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | BAW56 |
| Qualification | AEC-Q101 |
| Diode Mounting | Surface Mount |
| Diode Case Style | SOT-323 |
| Diode Configuration | Dual Common Anode |
| Forward Voltage Max | 1.25V |
| Forward Surge Current | 500mA |
| Reverse Recovery Time | 6ns |
| Average Forward Current | 150mA |
| Operating Temperature Max | 150°C |
| Repetitive Peak Reverse Voltage | 70V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2317712/)

## BAW56WT1G, SBAW56WT1G 

## Dual Switching Diode, Common Anode 

## **Features** 

**www.onsemi.com** 

- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

**SC−70 CASE 419 STYLE 4** 

**MAXIMUM RATINGS** (TA = 25 ° C) 

**==> picture [146 x 51] intentionally omitted <==**

**----- Start of picture text -----**<br>
CATHODE<br>ANODE 1<br>3<br>2<br>CATHODE<br>**----- End of picture text -----**<br>


**Rating Symbol Max Unit** ANODE 3 Reverse Voltage VR 70 V Forward Current IF 200 mA ~~———~~ Peak Forward Surge Current IFM(surge) 500 mA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. **THERMAL CHARACTERISTICS** (TA = 25 ° C) A1 M **Characteristic Symbol Max Unit** 1 Total Device Dissipation FR−5 Board PD 200 mW (Note 1)TA = 25 ° C ° ° A1MM = Device Code= Date Code*= Date Code* Derate above 25 C 1.6 mW/ C Thermal Resistance, Junction−to−Ambient R JA 625 ° C/W ~~nn~~ _ Total Device Dissipation PD 300 mW Alumina Substrate (Note 2) TA = 25 ° C ° ° upon manufacturing location. Derate above 25 C 2.4 mW/ C Thermal Resistance, Junction−to−Ambient R JA 417 ° C/W ~~pf~~ Junction and Storage Temperature TJ, Tstg ~~|}~~ −55 to ° C +150 **Device Package** 1. ~~ee~~ FR−5 = 1.0 0.75 0.062 in. ~~eee~~ BAW56WT1G SC−70 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Pb−Free 

**MARKING DIAGRAM** A1 M 1 A1MM = Device Code= Date Code*= Date Code* = Pb−Free Package _ 

(Note: Microdot may be in either location) 

*Date Code orientation may vary depending upon manufacturing location. 

## **ORDERING INFORMATION** 

|**Device**|**Package**|**Package**<br>**Shipping**†|
|---|---|---|
|BAW56WT1G|SC−70<br>(Pb−Free|SC−70<br>Pb−Free)<br>3,000 / Tape & Reel|
|SBAW56WT1G|SC−70<br>(Pb−Free)|SC−70<br>(Pb−Free)<br>3,000 / Tape & Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: **BAW56WT1/D** 

© Semiconductor Components Industries, LLC, 2016 **April, 2016 − Rev. 8** 

**1** 

**BAW56WT1G, SBAW56WT1G** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||
|Reverse Breakdown Voltage<br>(I(BR)= 100�A)|V(BR)|70|−|V|
|Reverse Voltage Leakage Current<br>(VR= 25 V, TJ= 150°C)<br>(VR= 70 V)<br>(VR= 70 V, TJ= 150°C)|IR|−<br>−<br>−|30<br>2.5<br>50|�A|
|Diode Capacitance<br>(VR= 0, f = 1.0 MHz)|CD|−|2.0|pF|
|Forward Voltage<br>(IF= 1.0 mA)<br>(IF= 10 mA)<br>(IF= 50 mA)<br>(IF= 150 mA)|VF|−<br>−<br>−<br>−|715<br>855<br>1000<br>1250|mV|
|Reverse Recovery Time<br>(IF= IR= 10 mA, RL= 100�, IR(REC)= 1.0 mA) (Figure 1)|trr|−|6.0|ns|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

**==> picture [484 x 129] intentionally omitted <==**

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820 �<br>IF<br>+10 V 2.0 k 0.1 �F tr t p t<br>100 �H IF 10% t rr t<br>0.1 �F<br>DUT 90%<br>50 � OUTPUT 50 � INPUT iR(REC) = 1.0 mA<br>IR<br>PULSE SAMPLING VR OUTPUT PULSE<br>GENERATOR OSCILLOSCOPE INPUT SIGNAL<br>(IF = IR = 10 mA; MEASURED<br>at iR(REC) = 1.0 mA)<br>**----- End of picture text -----**<br>


Notes: 1. A 2.0 k � variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr 

**Figure 1. Recovery Time Equivalent Test Circuit** 

**www.onsemi.com** 

**2** 

**BAW56WT1G, SBAW56WT1G** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [488 x 381] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 10<br>TA = 150°C<br>TA = 125°C<br>1.0<br>10<br>TA = 85°C TA = 85°C<br>TA = 25°C 0.1<br>1.0 TA = 55°C<br>0.01<br>TA = -�40°C<br>TA = 25°C<br>0.1 0.001<br>0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50<br>VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>Figure 2. Forward Voltage Figure 3. Leakage Current<br>1.75<br>1.5<br>1.25<br>1.0<br>0.75<br>0 2 4 6 8<br>VR, REVERSE VOLTAGE (VOLTS)<br>A)<br>μ<br>IR, REVERSE CURRENT (<br>IF, FORWARD CURRENT (mA)<br>CD, DIODE CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 4. Capacitance** 

**www.onsemi.com** 

**3** 

**BAW56WT1G, SBAW56WT1G** 

## **PACKAGE DIMENSIONS** 

**SC−70 (SOT−323)** CASE 419−04 ISSUE N 

**==> picture [480 x 347] intentionally omitted <==**

**----- Start of picture text -----**<br>
D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>e1 2. CONTROLLING DIMENSION: INCH.<br>MILLIMETERS INCHES<br>3 DIM MIN NOM MAX MIN NOM MAX<br>A 0.80 0.90 1.00 0.032 0.035 0.040<br>HE E A1 0.00 0.05 0.10 0.000 0.002 0.004<br>1 2 A2 0.70 REF 0.028 REF<br>b 0.30 0.35 0.40 0.012 0.014 0.016<br>c 0.10 0.18 0.25 0.004 0.007 0.010<br>i a n == D 1.80 2.10 2.20 0.071 0.083 0.087<br>b E 1.15 1.24 1.35 0.045 0.049 0.053<br>e 1.20 1.30 1.40 0.047 0.051 0.055<br>be e ———— e1 0.65 BSC 0.026 BSC<br>L 0.20 0.38 0.56 0.008 0.015 0.022<br>H E 2.00 2.10 2.40 0.079 0.083 0.095<br>44 ————————— STYLE 4:<br>A A2 c PIN 1.2. CATHODECATHODE<br>3. ANODE<br>Et 0.05 (0.002) A1 Ay L<br>SOLDERING FOOTPRINT*<br>0.65<br>0.65 0.025<br>0.025<br>1.9<br>aia<br>0.075<br>0.9<br>0.035<br>0.7<br>[3—*<br>0.028<br>SCALE 10:1 mm<br>ate _ inches<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

ON Semiconductor and the         are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf.  SCILLC reserves the right to make changes without further notice to any products herein.  SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.  All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.  SCILLC does not convey any license under its patent rights nor the rights of others.  SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.  Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.  SCILLC is an Equal Opportunity/Affirmative Action Employer.  This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**LITERATURE FULFILLMENT** : **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative 

## **LITERATURE FULFILLMENT** : 

**www.onsemi.com** 

**BAW56WT1/D** 

**4** 



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