# Small Signal Diode, Dual Common Anode, 85 V, 140 mA, 1.25 V, 3 µs, 4 A

![Product image](https://novapart.co/image/farnell:2463436/)

**URL**: https://novapart.co/products/BAW156,215/small-signal-diode-dual-common-anode-85-v-140-ma
**SKU**: BAW156,215
**Manufacturer**: NEXPERIA
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Small Signal Diodes
**Price**: €0.0470
**Stock**: 10+
**Lead Time**: 373 days (indicative)

## Description

Diode Configuration:Dual Common Anode; Repetitive Reverse Voltage Vrrm Max:85V; Forward Current If(AV):140mA; Forward Voltage VF Max:1.25V; Reverse Recovery Time trr Max:3µs; Forward Surge

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | BAW15 |
| Qualification | - |
| Diode Mounting | Surface Mount |
| Diode Case Style | TO-236AB |
| Diode Configuration | Dual Common Anode |
| Forward Voltage Max | 1.25V |
| Forward Surge Current | 4A |
| Reverse Recovery Time | 3µs |
| Average Forward Current | 140mA |
| Operating Temperature Max | 150°C |
| Repetitive Peak Reverse Voltage | 85V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2463436/)

## _**DISCRETE SEMICONDUCTORS**_ 

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DATA SHEET<br>**----- End of picture text -----**<br>


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ook, halfpage<br>M3D088<br>**----- End of picture text -----**<br>


## **BAW156** Low-leakage double diode 

Product data sheet 1999 May 11 Supersedes data of 1996 Mar 13 

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**NXP Semiconductors** 

**Product data sheet** 

## **Low-leakage double diode** 

## **BAW156** 

## **FEATURES** 

- Plastic SMD package 

- Low leakage current: typ. 3 pA 

- Switching time: typ. 0.8 μs 

- Continuous reverse voltage: max. 75 V 

- Repetitive peak reverse voltage: max. 85 V 

- Repetitive peak forward current: max. 500 mA. 

## **APPLICATION** 

- Low-leakage current applications in surface mounted circuits. 

## **DESCRIPTION** 

Epitaxial, medium-speed switching, double diode in a small SOT23 plastic SMD package. The diodes are in common anode configuration. 

## **PINNING** 

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PIN DESCRIPTION<br>1 cathode<br>2 cathode<br>3 common anode<br>handbook, 4 columns 2 1<br>2 1<br>3<br>3<br>MAM206<br>Top view<br>Marking code:  JZp = made in Hong Kong; JZt = made in Malaysia.<br>Fig.1  Simplified outline (SOT23) and symbol.<br>**----- End of picture text -----**<br>


## **LIMITING VALUES** 

In accordance with the Absolute Maximum Rating System (IEC 134). 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**|
|---|---|---|---|---|---|
|**Per diode**||||||
|VRRM|repetitivepeak reverse voltage||−|85|V|
|VR|continuous reverse voltage||−|75|V|
|IF|continuous forward current|single diode loaded; note 1; see Fig.2|−|160|mA|
|||double diode loaded; note 1; see Fig.2|−|140|mA|
|IFRM|repetitivepeak forward current||−|500|mA|
|IFSM|non-repetitive peak forward<br>current|square wave; Tj= 25°C prior to surge;<br>see Fig.4<br>tp= 1μs<br>tp= 1 ms<br>tp= 1 s|−<br>−<br>−|4<br>1<br>0.5|A<br>A<br>A|
|Ptot|totalpower dissipation|Tamb ≤25°C; note 1|−|250|mW|
|Tstg|storage temperature||−65|+150|°C|
|Tj|junction temperature||−|150|°C|



## **Note** 

1. Device mounted on a FR4 printed-circuit board. 

1999 May 11 

2 

NXP Semiconductors 

Product data sheet 

## Low-leakage double diode 

## BAW156 

## **ELECTRICAL CHARACTERISTICS** 

Tj =  25 °C unless otherwise specified. 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**TYP.**|**MAX.**|**UNIT**|
|---|---|---|---|---|---|
|**Per diode**||||||
|VF|forward voltage|see Fig.3<br>IF= 1 mA<br>IF= 10 mA<br>IF= 50 mA<br>IF= 150 mA|−<br>−<br>−<br>−|900<br>1 000<br>1 100<br>1 250|mV<br>mV<br>mV<br>mV|
|IR|reverse current|see Fig.5<br>VR= 75 V<br>VR= 75 V; Tj= 150°C|0.003<br>3|5<br>80|nA<br>nA|
|Cd|diode capacitance|f = 1 MHz; VR= 0; see Fig.6|3|−|pF|
|trr|reverse recovery time|when switched from IF= 10 mA to<br>IR= 10 mA; RL= 100Ω;<br>measured at IR= 1 mA; see Fig.7|0.8|3|μs|



## **THERMAL CHARACTERISTICS** 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**VALUE**|**UNIT**|
|---|---|---|---|---|
|Rthj-tp|thermal resistance fromjunction to tie-point||360|K/W|
|Rthj-a|thermal resistance fromjunction to ambient|note 1|500|K/W|



## **Note** 

1. Device mounted on a FR4 printed-circuit board. 

1999 May 11 

3 

NXP Semiconductors 

Product data sheet 

## Low-leakage double diode 

## BAW156 

## **GRAPHICAL DATA** 

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MLB752 - 1<br>MLB756 300<br>300 handbook, halfpage<br>handbook, halfpage<br>IF IF<br>(mA) (mA)<br>200 200<br>(1) (2) (3)<br>single diode loaded<br>100 100<br>double diode loaded<br>0 0<br>0 100 o 200 0 0.4 0.8 1.2 1.6<br>T         (  C)amb<br>V    (V)F<br>Device mounted on a FR4 printed-circuit board.  (1)(2) TTj j = 150 = 25 °C; typical values.°C; typical values.<br>(3) Tj = 25 °C; maximum values.<br>Fig.2 Maximum permissible continuous forward<br>current as a function of ambient  Fig.3 Forward current as a function of forward<br>temperature. voltage; per diode.<br>**----- End of picture text -----**<br>


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MBG704<br>10 [2]<br>handbook, full pagewidth<br>IFSM<br>(A)<br>10<br>1<br>10 [−] [1]<br>1 10 10 [2] 10 [3] 10 [4]<br>tp ( μ s)<br>Based on square wave currents.<br>Tj = 25 °C prior to surge.<br>Fig.4  Maximum permissible non-repetitive peak forward current as a function of pulse duration per diode.<br>**----- End of picture text -----**<br>


1999 May 11 

4 

NXP Semiconductors 

Product data sheet 

## Low-leakage double diode 

## BAW156 

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MLB754<br>10 [2]<br>handbook, halfpage<br>I R<br>(nA)<br>10 (1)<br>1<br>10 [1]<br>10 [2] (2)<br>10 [3]<br>0 50 100 150 200<br>T   (  C)j o<br>VR = 75 V.<br>Fig.5 Reverse current as a function of junction<br>temperature; per diode.<br>**----- End of picture text -----**<br>


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MBG525<br>4<br>handbook, halfpage<br>Cd<br>(pF)<br>3<br>2<br>1<br>0<br>0 5 10 15 20<br>VR (V)<br>f = 1 MHz; Tj = 25 °C.<br>Fig.6 Diode capacitance as a function of reverse<br>voltage; per diode; typical values.<br>**----- End of picture text -----**<br>


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handbook, full pagewidth<br>tr t p<br>t<br>D.U.T. 10%<br>R   = 50 Ω IF IF t rr<br>S SAMPLING t<br>OSCILLOSCOPE<br>V = V      I   x RR F S R  = 50i Ω<br>90% (1)<br>VR<br>MGA881<br>input signal output signal<br>Fig.7  Reverse recovery time test circuit and waveforms.<br>**----- End of picture text -----**<br>


1999 May 11 

5 

NXP Semiconductors 

Product data sheet 

## Low-leakage double diode 

## BAW156 

## **PACKAGE OUTLINE** 

## **Plastic surface mounted package; 3 leads** 

**SOT23** 

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D B E A X<br>HE v M A<br>3<br>Q<br>A<br>A1<br>1 2 c<br>e1 bp w M B Lp<br>e<br>detail X<br>0 1 2 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>UNIT A max.A1 bp c D E  e e1 HE Lp Q v w<br>1.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55<br>mm 0.1 1.9 0.95 0.2 0.1<br>0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45<br>OUTLINE  REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION  IEC  JEDEC  EIAJ PROJECTION<br>97-02-28<br> SOT23 TO-236AB<br>99-09-13<br>**----- End of picture text -----**<br>


1999 May 11 

6 

**NXP Semiconductors** 

**Product data sheet** 

**Low-leakage double diode** 

**BAW156** 

## **DATA SHEET STATUS** 

|**DATA SHEET STATUS**|||
|---|---|---|
|**DOCUMENT**<br>**STATUS**(1)|**PRODUCT**<br>**STATUS**(2)|**DEFINITION**|
|Objective data sheet|Development|This document contains data from the objective specification for product<br>development.|
|Preliminarydata sheet|Qualification|This document contains data from thepreliminaryspecification.|
|Product data sheet|Production|This document contains theproduct specification.|



## **Notes** 

1. Please consult the most recently issued document before initiating or completing a design. 

2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 

## **DISCLAIMERS** 

**General** ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 

**Right to make changes** ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 

**Suitability for use** ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. 

⎯ **Applications** Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 

above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. 

**Terms and conditions of sale** ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. 

**No offer to sell or license** ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 

⎯ **Export control** This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 

**Quick reference data** ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 

⎯ **Limiting values** Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 

1999 May 11 

7 

## _**NXP Semiconductors**_ 

## **Customer notification** 

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. 

## **Contact information** 

For additional information please visit: **http://www.nxp.com** For sales offices addresses send e-mail to: **salesaddresses@nxp.com** 

## © NXP B.V. 2009 

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. 

Printed in The Netherlands 

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Date of release: 1999 May 11 

115002/00/03/pp8 

Document order number: 9397 750 05951 



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- [Supplier page](https://es.farnell.com/nexperia/baw156-215/diode-switching-85v-sot-23/dp/2463436)
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