# Small Signal Diode, Dual Common Cathode, 70 V, 150 mA, 1.25 V, 6 ns, 500 mA

![Product image](https://novapart.co/image/farnell:2317449/)

**URL**: https://novapart.co/products/BAV70WT1G/small-signal-diode-dual-common-cathode-70-v-150-ma
**SKU**: BAV70WT1G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Small Signal Diodes
**Price**: €0.0240
**Stock**: 1000+
**Lead Time**: 125 days (indicative)

## Description

Diode Configuration:Dual Common Cathode; Repetitive Reverse Voltage Vrrm Max:70V; Forward Current If(AV):150mA; Forward Voltage VF Max:1.25V; Reverse Recovery Time trr Max:6ns; Forwar

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | BAV70 |
| Qualification | AEC-Q101 |
| Diode Mounting | Surface Mount |
| Diode Case Style | SOT-323 |
| Diode Configuration | Dual Common Cathode |
| Forward Voltage Max | 1.25V |
| Forward Surge Current | 500mA |
| Reverse Recovery Time | 6ns |
| Average Forward Current | 150mA |
| Operating Temperature Max | 150°C |
| Repetitive Peak Reverse Voltage | 70V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2317449/)

## BAV70W, SBAV70W 

## Dual Switching Diode Common Cathode 

## **Features** 

- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

**www.onsemi.com** 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* 

**MAXIMUM RATINGS** (TA = 25 ° C) **Rating Symbol Max Unit** Reverse Voltage VR 100 V Forward Current IF 200 mA ~~a~~ Peak Forward Surge Current IFM(surge) 500 mA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **SOT−323 CASE 419 STYLE 5** 

**==> picture [110 x 46] intentionally omitted <==**

**----- Start of picture text -----**<br>
ANODE<br>1<br>3<br>CATHODE 2<br>ANODE<br>**----- End of picture text -----**<br>


## **MARKING DIAGRAM** 

**THERMAL CHARACTERISTICS** 3 **Characteristic Symbol Max Unit** Total Device Dissipation FR−5 Board PD 200 mW A4 M (Note 1) TA = 25 ° C Derate above 25 ° C 1.6 mW/ ° C ~~ft]~~ ts 1 2 Thermal Resistance, R JA 625 ° C/W Junction−to−Ambient A4 = Specific Device Code ~~eee~~ M = Date Code Total Device Dissipation PD 300 mW Alumina Substrate (Note 2) TDerate above 25 ° C A = 25 ° C 2.4 mW/ ° C (Note: Microdot may be in either location)= Pb−Free Package ~~es~~ Thermal Resistance, R JA 417 ° C/W **ORDERING INFORMATION** Junction−to−Ambient Junction and Storage Temperature TJ, Tstg −55 to ° C **Device Package Shipping**[†] +150 BAV70WT1G SOT−323 3,000 / Tape & Reel 1. FR−5 = 1.0 0.75 0.062 in. (Pb−Free) 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. SBAV70WT1G SOT−323 3,000 / Tape & Reel (Pb−Free) ~~— a =~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Publication Order Number: **BAV70WT1/D** 

© Semiconductor Components Industries, LLC, 2015 **April, 2015 − Rev. 8** 

**1** 

## **BAV70W, SBAV70W** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|Reverse Breakdown Voltage<br>(I(BR)= 100�A)|V(BR)|100|−|V|
|Reverse Voltage Leakage Current (Note 3)<br>(VR= 100 V)<br>(VR= 50 V)|IR|−<br>−|1.0<br>100|�A<br>nA|
|Forward Voltage<br>(IF= 1.0 mA)<br>(IF= 10 mA)<br>(IF= 50 mA)<br>(IF= 150 mA)|VF|−<br>−<br>−<br>−|715<br>855<br>1000<br>1250|mV|
|Diode Capacitance<br>(VR= 0 V, f = 1.0 MHz)|CD|−|1.5|pF|
|Reverse Recovery Time<br>(IF= IR= 10 mA, RL= 100�, IR(REC)= 1.0 mA) (Figure 1)|trr|−|6.0|ns|
|Forward Recovery Voltage<br>(IF= 10 mA, tr= 20 ns) (Figure 2)|VRF|−|1.75|V|



3. For each individual diode while the second diode is unbiased. 

**www.onsemi.com** 

**2** 

**BAV70W, SBAV70W** 

**==> picture [449 x 313] intentionally omitted <==**

**----- Start of picture text -----**<br>
BAV70<br>RS = 50 �<br>SAMPLING<br>OSCILLOSCOPE<br>IF RL = 50 �<br>tr tp<br>t<br>10%<br>+IF trr OUTPUT PULSE<br>VR<br>10%�OF�<br>90% 100��<br>VR<br>INPUT PULSE<br>**----- End of picture text -----**<br>


**Figure 1. Recovery Time Equivalent Test Circuit** 

**==> picture [413 x 316] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 K� 450 �<br>RS = 50 �<br>SAMPLING<br>BAV70<br>OSCILLOSCOPE<br>RL = 50 �<br>I<br>V<br>90%<br>VFR<br>10%<br>t<br>tr tp<br>INPUT PULSE OUTPUT PULSE t<br>Figure 2.<br>**----- End of picture text -----**<br>


**www.onsemi.com** 

**3** 

## **BAV70W, SBAV70W** 

**==> picture [485 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 10<br>TA = 150°C<br>TA = 125°C<br>1.0<br>10<br>TA = 85°C TA = 85°C<br>0.1<br>1.0 TA = 25°C TA = 55°C<br>TA = -�40°C 0.01<br>TA = 25°C<br>0.1 0.001<br>0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50<br>VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>A)<br>μ<br>IR, REVERSE CURRENT (<br>IF, FORWARD CURRENT (mA)<br>**----- End of picture text -----**<br>


**Figure 3. Forward Voltage** 

**Figure 4. Leakage Current** 

**==> picture [239 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.0<br>0.9<br>0.8<br>0.7<br>0.6<br>0 2 4 6 8<br>VR, REVERSE VOLTAGE (VOLTS)<br>CD, DIODE CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 5. Capacitance** 

**www.onsemi.com** 

**4** 

**BAV70W, SBAV70W** 

## **PACKAGE DIMENSIONS** 

**SC−70 (SOT−323)** CASE 419−04 ISSUE N 

**==> picture [462 x 345] intentionally omitted <==**

**----- Start of picture text -----**<br>
D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>e1 2. CONTROLLING DIMENSION: INCH.<br>MILLIMETERS INCHES<br>3 DIM MIN NOM MAX MIN NOM MAX<br>A 0.80 0.90 1.00 0.032 0.035 0.040<br>HE E A1 0.00 0.05 0.10 0.000 0.002 0.004<br>1 2 A2 0.70 REF 0.028 REF<br>b 0.30 0.35 0.40 0.012 0.014 0.016<br>c 0.10 0.18 0.25 0.004 0.007 0.010<br>i a n —— D 1.80 2.10 2.20 0.071 0.083 = 0.087<br>b E 1.15 1.24 1.35 0.045 0.049 0.053<br>e 1.20 1.30 1.40 0.047 0.051 0.055<br>e e e ls ——— e1 0.65 BSC 0.026 BSC<br>L 0.20 0.38 0.56 0.008 0.015 0.022<br>4 1 +} STYLE 5: H E 2.00 2.10 2.40 —} 0.079 —}—_ 0.083 + 0.095<br>A A2 c PIN 1. 2. ANODEANODE<br> 3. CATHODE<br>0.05 (0.002) L<br>A1<br>SOLDERING FOOTPRINT*<br>0.65<br>0.65 0.025<br>0.025<br>1.9<br>ai + 0.075<br>0.9<br>0.035<br>0.7<br>iE<br>0.028 a<br>SCALE 10:1 mm<br>= inches<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

**ON Semiconductor** and          are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).  SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf.  SCILLC reserves the right to make changes without further notice to any products herein.  SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.  All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.  SCILLC does not convey any license under its patent rights nor the rights of others.  SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.  Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.  SCILLC is an Equal Opportunity/Affirmative Action Employer.  This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

## **LITERATURE FULFILLMENT** : 

Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Email** : orderlit@onsemi.com 

**N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** USA/Canada **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit Phone: 421 33 790 2910 **Japan Customer Focus Center** For additional information, please contact your local Phone: 81−3−5817−1050 Sales Representative 

**www.onsemi.com** 

**BAV70WT1/D** 

**5** 



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