BAV20W-TP
SWITCHING DIODE, 150V, SOD-123
- Manufacturer: MICRO COMMERCIAL COMPONENTS
- Product type: Small Signal Diodes
- No. of Pins: 2Pins
- Diode Case Style: SOD-123
- Diode Configuration: Single
- Forward Voltage Max: 1.25V
- Forward Surge Current: 1A
- Reverse Recovery Time: 50ns
- Average Forward Current: 200mA
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 150V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.053 € |
| Current stock | 10+ |
| Lead time | 30 days |
## _M C C_ - TM ������������������ omponents 20736 Marilla Street Chatsworth - **Micro Commercial Components** �������� ��������������������� ��������������������� **==> picture [86 x 67] intentionally omitted <==** **----- Start of picture text -----**<br> BAV19W<br>THRU<br>BAV21W<br>**----- End of picture text -----**<br> ## Features **==> picture [132 x 79] intentionally omitted <==** **----- Start of picture text -----**<br> 410mW<br>Small Signal<br>Diodes<br>120 to 250 Volts<br>**----- End of picture text -----**<br> - Silicon Epitaxial Planar Diodes - For General Purpose - This diode is also available in other case. ## Mechanical Data |<br>•Marking code: BAV19W=A8<br>BAV20W=T2 or A80<br>BAV21W=T3 or A82<br>Maximum Ratings<br>•<br>Case Material: Molded Plastic. UL Flammability<br>Classification Rating 94V-0|<br>•Marking code: BAV19W=A8<br>BAV20W=T2 or A80<br>BAV21W=T3 or A82<br>Maximum Ratings<br>•<br>Case Material: Molded Plastic. UL Flammability<br>Classification Rating 94V-0|<br>•Marking code: BAV19W=A8<br>BAV20W=T2 or A80<br>BAV21W=T3 or A82<br>Maximum Ratings<br>•<br>Case Material: Molded Plastic. UL Flammability<br>Classification Rating 94V-0|<br>•Marking code: BAV19W=A8<br>BAV20W=T2 or A80<br>BAV21W=T3 or A82<br>Maximum Ratings<br>•<br>Case Material: Molded Plastic. UL Flammability<br>Classification Rating 94V-0|H||||A<br>B<br>E<br>D<br>G<br>SOD123|A<br>B<br>E<br>D<br>G<br>SOD123|A<br>B<br>E<br>D<br>G<br>SOD123|A<br>B<br>E<br>D<br>G<br>SOD123|A<br>B<br>E<br>D<br>G<br>SOD123|A<br>B<br>E<br>D<br>G<br>SOD123|A<br>B<br>E<br>D<br>G<br>SOD123||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |||||||||||||||||||||| ||||||C|||||||||||||||| |**Symbol**|**Rating**|**Rating**|**Unit**|||||||||||||||||| |VR|Continuous Reverse Voltage BAV19W<br>BAV20W<br>BAV21W|100<br>150<br>200|V|||||||||||||||||| |||||||||||||||||||||| |VRRM|Repetitive Peak Reverse Voltage BAV19W<br>BAV20W<br>BAV21W|120<br>200<br>250|V|||||||||||||||||| |||||||||||||||||||||| |||||||||||||||||||||| |IF|Forward DC Current at Tamb=25OC(1)|250|mA|||||||||||||||||| |IF(AV)|Rectified Current (Average) Half Wave<br>Rectification with Resist. Load at<br>Tamb=25OC(1)|200|mA|||||G||||||||||||| |||||||||||||||||||||| |IFRM|Repetitive Peak Forward Current at f>50Hz,<br>Tamb=25OC(1)|625|mA|||||||||||||||||| |||||||||DIMENSIONS||||||||||||| |IFSM|Surge Forward Current at t<1s,Tj=25OC|1.0|A||DIM|||INCHES||||MM||||NOTE||||| |Ptot|Power Dissipation at Tamb=25OC(1)|410|mW|||||MIN|MAX|||MIN||MAX||||||| |RJA|Thermal Resistance Junction to Ambient Air|375|mW||A|.||140|.152|||3.55||3.85||||||| |TJ|Junction Temperature|-55 to +150|OC<br>||B|.||100|.112|||2.55||2.85||||||| |TSTG|Storage Temperature|-55 to +150|OC||C|.||055|.071|||1.40||1.80||||||| |Electrical Characteristics @ 25OC Unless Otherwise Specified<br>**Symbol**<br>**Parameter**<br>**Min**<br>**Typ**<br>**Max**<br>**Units**<br>VF<br>Forward Voltage (IF=100mA)<br>(IF=200mA)<br>---<br>---<br>---<br>---<br>1.00<br>1.25<br>V<br>IR<br>Leakage Current<br>(VR=100V) BAV19W<br>(VR=100V, Tj=100OC) BAV19W<br>(VR=150V) BAV20W<br>(VR=150V, Tj=100OC) BAV20W<br>(VR=200V) BAV21W<br>(VR=200V,Tj=100OC)BAV21W<br>---<br>---<br>---<br>---<br>---<br>---<br>---<br>---<br>---<br>---<br>---<br>---<br>100<br>15<br>100<br>15<br>100<br>15<br>nA<br>uA<br>nA<br>uA<br>nA<br>uA<br>rf<br>Dynamic Forward Resistance<br> (IF=10mA)<br>---<br>5.0<br>---<br>OHM<br>Ctot<br>Capacitance<br> (VR=0,f=1.0MHz)<br>---<br>1.5<br>---<br>pF<br>trr<br>Reverse Recovery Time<br>(IF=30mA, IR=30mA)<br> (Irr=3.0mA,RL=100OHMS)<br>---<br>---<br>50<br>ns<br>*(1) Valid provided that leads are kept at ambient temperature|||||D|-||----|.053|||-----||1.35||||||| ||||||E|.||012|.031|||0.30||.78||||||| ||||||G|.||006|-----|||0.15||-----||||||| ||||||H|-||----|.01|||-----||.25||||||| ||||||J|-||----|.006|||-----||.15||||||| |||||||||0.03<br>0.093"<br>0.048”<br>SUGGESTED SOLDER<br>PAD LAYOUT||||||||||||| |||||||||||||||||||||| |||||||||||||||||||||| *(1) Valid provided that leads are kept at ambient temperature ## _www.mccsemi.com_ _Revision: 4 2006/05/13_ **1 of 4** ## BAV19W thru BAV21W **==> picture [106 x 29] intentionally omitted <==** **----- Start of picture text -----**<br> M C C<br>**----- End of picture text -----**<br> **==> picture [145 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> TM<br>**----- End of picture text -----**<br> **Micro Commercial Components** **==> picture [162 x 228] intentionally omitted <==** **==> picture [172 x 285] intentionally omitted <==** **==> picture [173 x 286] intentionally omitted <==** **==> picture [181 x 217] intentionally omitted <==** ## _www.mccsemi.com_ _Revision: 4 2006/05/13_ **2 of 4** ## BAV19W thru BAV21W ## _M C C_ **==> picture [144 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> TM<br>**----- End of picture text -----**<br> ## **Micro Commercial Components** **==> picture [9 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> Ω<br>**----- End of picture text -----**<br> **==> picture [172 x 217] intentionally omitted <==** **==> picture [169 x 240] intentionally omitted <==** ## _www.mccsemi.com_ _Revision: 4 2006/05/13_ **3 of 4** ## _M C C_ **==> picture [144 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> TM<br>**----- End of picture text -----**<br> ## **Micro Commercial Components** ## *****IMPORTANT NOTICE***** _**Micro Commercial Components Corp .**_ reserves the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . _**Micro Commercial Components Corp .**_ does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all risks of such use and will agree to hold _**Micro Commercial Components Corp .**_ and all the companies whose products are represented on our website, harmless against all damages. ## *****APPLICATIONS DISCLAIMER***** Products offer by _**Micro Commercial Components Corp .**_ are not intended for use in Medical, Aerospace or Military Applications. ## _www.mccsemi.com_ **4 of 4** _Revision: 4 2006/05/13_
Updated at February 9, 2023
Headquartered in the United States, Micro Commercial Components (MCC) is an established leader in the discrete semiconductor market. Leveraging vertical integration and an in-house wafer foundry, the company delivers high-quality, cost-effective components with competitive lead times. MCC's robust manufacturing capabilities allow them to support a wide array of demanding applications across the industrial, automotive, and consumer electronics sectors. The core of our MCC portfolio centers on a comprehensive selection of reliable diodes and rectifiers. This encompasses a strong variety of Zener single diodes designed for precise voltage regulation, alongside standard recovery, fast, and ultrafast rectifier diodes for efficient power management. Furthermore, MCC's small signal and Schottky diodes provide versatile, high-performance solutions for high-speed switching and applications requiring low forward voltage drops. Complementing their diode technologies, MCC manufactures a dependable lineup of bipolar transistors, as well as single and dual MOSFETs suited for diverse amplification and power switching tasks. By maintaining rigorous quality standards and a commitment to continuous process improvement, MCC remains a trusted partner for engineers seeking robust discrete semiconductors that enhance overall system reliability and performance.
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