# Small Signal Schottky Diode, Common Anode, 40 V, 200 mA, 550 mV, 1 A, 150 °C
**URL**: https://novapart.co/products/BAT854AW,115/small-signal-schottky-diode-common-anode-40-v-200
**SKU**: BAT854AW,115
**Manufacturer**: NEXPERIA
**Price**: €0.1240
**Stock**: 1000+
**Lead Time**: 64 days (indicative)
## Description
Diode Configuration:Common Anode; Repetitive Reverse Voltage Vrrm Max:40V; Forward Current If(AV):200mA; Forward Voltage VF Max:550mV; Forward Surge Current Ifsm Max:1A; Operating Temp
## Specifications
| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | BAT854W |
| Qualification | - |
| Diode Mounting | Surface Mount |
| Diode Case Style | SOT-323 |
| Diode Configuration | Common Anode |
| Forward Voltage Max | 550mV |
| Forward Surge Current | 1A |
| Reverse Recovery Time | - |
| Average Forward Current | 200mA |
| Operating Temperature Max | 150°C |
| Repetitive Peak Reverse Voltage | 40V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2575119/)
## **Important notice**
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the tradename **Nexperia** . Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use **http://www.nexperia.com**
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use **salesaddresses@nexperia.com** (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved
Should be replaced with:
- **© Nexperia B.V. (year). All rights reserved** .
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via **salesaddresses@nexperia.com** ). Thank you for your cooperation and understanding,
Kind regards,
Team Nexperia
_**DISCRETE SEMICONDUCTORS**_
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DATA SHEET
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halfpage
M3D102
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## **BAT854W series** Schottky barrier (double) diodes
Product data sheet 2001 Feb 27
**==> picture [249 x 119] intentionally omitted <==**
**NXP Semiconductors**
**Product data sheet**
## **Schottky barrier (double) diodes**
## **BAT854W series**
## **FEATURES**
## **PINNING**
|• Very low forward voltage
• Very low reverse current
• Guard ring protected
• Very small SMD plastic package.
**APPLICATIONS**
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes
• Low power consumption
applications (e.g. hand-held
applications).
**DESCRIPTION**
Planar Schottky barrier diodes
encapsulated in a SOT323 very small
SMD plastic package. Single diodes
and double diodes with different
pinning are available.
**MARKING**
**TYPE NUMBER**
**MARKING**
**CODE**
BAT854W
81
BAT854AW
82
BAT854CW
83
BAT854SW
84|||||||
|---|---|---|---|---|---|---|
||**PIN**|||||**SYMBOL**|
||**BAT854W**||||||
||1|||||a|
||2|||||n.c.|
||3|||||k|
||**BAT854AW**||||||
||1|||||k1|
||2|||||k2|
||3|||||a1,a2|
||**BAT854CW**||||||
||1|||||a1|
||2|||||a2|
||3|||||k1, k2|
||**BAT854SW**||||||
||1|||||a1|
||2|||||k2|
||3|||||k1, a2|
||||||||
||||||||
||_handbook, 2 colu_|_mns_|||||
||||||||
||||||||
||**1**
**2**
_MBC870_
Top view||||||
||||||||
||||||||
||Fig.1
Simplified outline
SOT323 and pin
configuration.||||||
2001 Feb 27
2
NXP Semiconductors
Product data sheet
## Schottky barrier (double) diodes
## BAT854W series
## **LIMITING VALUES**
In accordance with the Absolute Maximum Rating System (IEC 60134).
|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**|
|---|---|---|---|---|---|
|**Per diode**||||||
|VR|continuous reverse voltage||−|40|V|
|IF|continuous forward current||−|200|mA|
|IFRM|repetitivepeak forward current|tp ≤1 s;δ ≤0.5|−|300|mA|
|IFSM|non-repetitive peak forward current|t = 8.3 ms half sinewave;
JEDEC method|−|1|A|
|Tstg|storage temperature||−65|+150|°C|
|Tj|junction temperature||−|150|°C|
|Tamb|operatingambient temperature||−65|+150|°C|
## **ELECTRICAL CHARACTERISTICS**
Tamb = 25 °C; unless otherwise specified.
|Tamb= 25°C;|unless otherwise specified.|||||
|---|---|---|---|---|---|
|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**TYP.**|**MAX.**|**UNIT**|
|**Per diode**||||||
|VF|continuous forward voltage|see Fig.6
IF= 0.1 mA
IF= 1 mA
IF= 10 mA
IF= 30 mA
IF= 100 mA|200
260
340
−
−|−
−
−
420
550|mV
mV
mV
mV
mV|
|IR|continuous reverse current|VR= 25 V; note 1; see Fig.7|−|0.5|μA|
|Cd|diode capacitance|VR= 1 V; f = 1 MHz; see Fig.8|−|20|pF|
## **Note**
1. Pulse test: tp = 300 μs; δ = 0.02.
## **THERMAL CHARACTERISTICS**
|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**VALUE**|**UNIT**|
|---|---|---|---|---|
|Rthj-a|thermal resistance fromjunction to ambient|note 1|625|K/W|
## **Note**
1. Refer to SOT323 standard mounting conditions.
2001 Feb 27
3
NXP Semiconductors
Product data sheet
## Schottky barrier (double) diodes
## BAT854W series
## **GRAPHICAL DATA**
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**----- Start of picture text -----**
MLD546
10 [3]
handbook, halfpage
IF
(mA)
10 [2]
10
(1) (2) (3)
1
10 [−] [1]
0 0.4 0.8 1.2
VF (V)
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.6 Forward current as a function of forward
voltage; typical values.
**----- End of picture text -----**
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**----- Start of picture text -----**
MLD547
10 [3]
handbook, halfpage
IR
( μ A) (1)
10 [2]
(2)
10
1
(3)
10 [−] [1]
0 10 20 30 40
VR (V)
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.7 Reverse current as a function of reverse
voltage; typical values.
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**----- Start of picture text -----**
MLD548
20
handbook, halfpage
Cd
(pF)
16
12
8
4
0
0 10 20 30 40
VR (V)
f = 1 MHz; Tamb = 25 °C.
Fig.8 Diode capacitance as a function of reverse
voltage; typical values.
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2001 Feb 27
4
NXP Semiconductors
Product data sheet
## Schottky barrier (double) diodes
## BAT854W series
## **PACKAGE OUTLINE**
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**----- Start of picture text -----**
Plastic surface mounted package; 3 leads SOT323
D B E A
X
y HE v M A
3
Q
A
A1
c
1 2
e1 bp w M B Lp
e detail X
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A maxA1 bp c D E e e1 HE Lp Q v w
1.1 0.4 0.25 2.2 1.35 2.2 0.45 0.23
mm 0.1 1.3 0.65 0.2 0.2
0.8 0.3 0.10 1.8 1.15 2.0 0.15 0.13
OUTLINE REFERENCES EUROPEAN
ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION
SOT323 SC-70 97-02-28
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2001 Feb 27
5
NXP Semiconductors
Product data sheet
## Schottky barrier (double) diodes
## BAT854W series
## **DATA SHEET STATUS**
|**DATA SHEET STATUS**|||
|---|---|---|
|**DOCUMENT**
**STATUS**(1)|**PRODUCT**
**STATUS**(2)|**DEFINITION**|
|Objective data sheet|Development|This document contains data from the objective specification for product
development.|
|Preliminarydata sheet|Qualification|This document contains data from thepreliminaryspecification.|
|Product data sheet|Production|This document contains theproduct specification.|
## **Notes**
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
## **DISCLAIMERS**
**General** ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.
**Right to make changes** ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
**Suitability for use** ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.
⎯ **Applications** Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.
**Terms and conditions of sale** ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.
**No offer to sell or license** ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
⎯ **Export control** This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
**Quick reference data** ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
⎯ **Limiting values** Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions
2001 Feb 27
6
## _**NXP Semiconductors**_
## **Customer notification**
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers.
## **Contact information**
For additional information please visit: **http://www.nxp.com** For sales offices addresses send e-mail to: **salesaddresses@nxp.com**
## © NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
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Date of release: 2001 Feb 27
613514/01/pp7
Document order number: 9397 750 07935
## Links
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- [Supplier page](https://es.farnell.com/nexperia/bat854aw-115/schottky-diode-40v-0-2a-sot-323/dp/2575119)
---
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