# Small Signal Schottky Diode, Dual Isolated, 30 V, 200 mA, 800 mV, 600 mA, 125 °C

![Product image](https://novapart.co/image/farnell:3439597RL/)

**URL**: https://novapart.co/products/BAT74V,115/small-signal-schottky-diode-dual-isolated-30-v-200
**SKU**: BAT74V,115
**Manufacturer**: NEXPERIA
**Price**: €0.1050
**Stock**: 10+
**Lead Time**: 64 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 6Pins |
| Product Range | - |
| Qualification | AEC-Q101 |
| Diode Mounting | Surface Mount |
| Diode Case Style | SOT-666 |
| Diode Configuration | Dual Isolated |
| Forward Voltage Max | 800mV |
| Forward Surge Current | 600mA |
| Reverse Recovery Time | - |
| Average Forward Current | 200mA |
| Operating Temperature Max | 125°C |
| Repetitive Peak Reverse Voltage | 30V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3439597RL/)

## **DISCRETE SEMICONDUCTORS** 

## **DATA SHEET** 

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M3D744<br>**----- End of picture text -----**<br>


## **BAT74V** Schottky barrier double diode 

2002 Sep 02 

**Philips Semiconductors** 

**BAT74V** 

## **Schottky barrier double diode** 

## **FEATURES** 

- Low forward voltage 

- Low capacitance 

- Ultra small SMD plastic package 

- Flat leads: excellent coplanarity and improved thermal behaviour. 

## **APPLICATIONS** 

- Ultra high-speed switching 

- Voltage clamping 

- Line termination 

- Inverse polarity protection. 

## **DESCRIPTION** 

Planar Schottky barrier double diode with an integrated guard ring for stress protection. 

Two separate dies encapsulated in a SOT666 ultra small SMD plastic package. 

## **PINNING** 

|**PINNING**||
|---|---|
|**PIN**|**DESCRIPTION**|
|1|anode 1|
|2|not connected|
|3|cathode 2|
|4|anode 2|
|5|not connected|
|6|cathode 1|



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handbook, halfpage 6 5 4<br>6 4<br>1 3<br>1 2 3<br>Top view MAM461<br>Marking code:  74.<br>**----- End of picture text -----**<br>


Fig.1  Simplified outline (SOT666) and symbol. 

## **LIMITING VALUES** 

In accordance with the Absolute Maximum Rating System (IEC 60134). 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**|
|---|---|---|---|---|---|
|VR|continuous reverse voltage||−|30|V|
|IF|continuous forward current||−|200|mA|
|IFRM|repetitive peak forward current|tp≤1 s;δ ≤0.5|−|300|mA|
|IFSM|non-repetitive peak forward current|tp<10 ms||600|mA|
|Ptot|total power dissipation|Tamb≤25°C|−|230|mW|
|Tstg|storage temperature||−65|+150|°C|
|Tj|junction temperature||−|125|°C|
|Tamb|operating ambient temperature||−65|+125|°C|



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## Schottky barrier double diode 

## BAT74V 

## **CHARACTERISTICS** 

Tamb = 25 ° 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MAX.**|**UNIT**|
|---|---|---|---|---|
|VF|continuous forward voltage|IF= 0.1 mA|240|mV|
|||IF= 1 mA|320|mV|
|||IF= 10 mA|400|mV|
|||IF= 30 mA|500|mV|
|||IF= 100 mA; note 1; see Fig.2|800|mV|
|IR|reverse current|VR= 25 V; note 1; see Fig.3|2|µA|
|Cd|diode capacitance|VR= 1 V; f = 1 MHz; see Fig.4|10|pF|



## **Note** 

1. Pulse test: tp = 300 µs; δ = 0.02. 

## **THERMAL CHARACTERISTICS** 

|**SYMBOL**|**PARAMETER**|**CONDITIONS**|**VALUE**|**UNIT**|
|---|---|---|---|---|
|Rth j-a|thermal resistance from junction to ambient|note 1|416|K/W|



## **Note** 

1. Refer to SOT666 standard mounting conditions. 

## **Soldering** 

The only recommended soldering method is reflow soldering. 

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Philips Semiconductors 

## Schottky barrier double diode 

## BAT74V 

## **GRAPHICAL DATA** 

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MSA892<br>10 3<br>handbook, halfpage<br>IF (1) (2) (3)<br>(mA)<br>10 2<br>10<br>(1) (2) (3)<br>1<br>10 [1]<br>0 0.4 0.8 1.2<br>VF (V)<br>(1) Tamb = 125 °C.<br>(2) Tamb = 85 °C.<br>(3) Tamb = 25 °C.<br>Fig.2 Forward current as a function of forward<br>voltage; typical values.<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
10 [3] MSA893<br>IR (1)<br>(µA)<br>10 [2]<br>(2)<br>10<br>1<br>(3)<br>10 [1]<br>0 10 20 30<br>V    (V)R<br>(1) Tamb = 125 °C.<br>(2) Tamb = 85 °C.<br>**----- End of picture text -----**<br>


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(3) Tamb = 25 °C.<br>**----- End of picture text -----**<br>


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Fig.3 Reverse current as a function of reverse<br>voltage; typical values.<br>**----- End of picture text -----**<br>


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MSA891<br>15<br>handbook, halfpage<br>Cd<br>(pF)<br>10<br>5<br>0<br>0 10 20 30<br>VR (V)<br>**----- End of picture text -----**<br>


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f = 1 MHz; Tamb = 25 °C.<br>**----- End of picture text -----**<br>


Fig.4 Diode capacitance as a function of reverse voltage; typical values. 

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Philips Semiconductors 

## Schottky barrier double diode 

## BAT74V 

## **PACKAGE OUTLINE** 

## **Plastic surface mounted package; 6 leads** 

**SOT666** 

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D A E X<br>S Y S<br>HE<br>6 5 4<br>pin 1 index<br>A<br>1 2 3 c<br>e1 bp w M A<br>Lp<br>e<br>detail X<br>0 1 2 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>UNIT A bp c D E  e e1 HE Lp w y<br>0.6 0.27 0.18 1.7 1.3 1.7 0.3<br>mm 1.0 0.5 0.1 0.1<br>0.5 0.17 0.08 1.5 1.1 1.5 0.1<br>OUTLINE  REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION  IEC  JEDEC  EIAJ PROJECTION<br>01-01-04<br> SOT666<br>01-08-27<br>**----- End of picture text -----**<br>


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## Schottky barrier double diode 

## BAT74V 

## **DATA SHEET STATUS** 

|**DATA SHEET STATUS**|||
|---|---|---|
|**DATA SHEET STATUS**(1)|**PRODUCT**<br>**STATUS**(2)|**DEFINITIONS**|
|Objective data|Development|This data sheet contains data from the objective specification for product<br>development. Philips Semiconductors reserves the right to change the<br>specifcation in any manner without notice.|
|Preliminary data|Qualifcation|This data sheet contains data from the preliminary specification.<br>Supplementary data will be published at a later date. Philips<br>Semiconductors reserves the right to change the specifcation without<br>notice, in order to improve the design and supply the best possible<br>product.|
|Product data|Production|This data sheet contains data from the product specification. Philips<br>Semiconductors reserves the right to make changes at any time in order<br>to improve the design, manufacturing and supply. Changes will be<br>communicated according to the Customer Product/Process Change<br>Notifcation (CPCN) procedure SNW-SQ-650A.|



## **Notes** 

1. Please consult the most recently issued data sheet before initiating or completing a design. 

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 

## **DEFINITIONS** 

**Short-form specification**  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. 

**Limiting values definition**  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. 

**Application information**  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 

## **DISCLAIMERS** 

**Life support applications**  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. 

**Right to make changes**  Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise spec 

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Philips Semiconductors 

Schottky barrier double diode 

BAT74V 

## **NOTES** 

2002 Sep 02 

7 

## **Philips Semiconductors – a worldwide company** 

## **Contact information** 

For additional information please visit **http://www.semiconductors.philips.com** . Fax: **+31 40 27 24825** For sales offices addresses send e-mail to: **sales.addresses@www.semiconductors.philips.com** . 

© Koninklijke Philips Electronics N.V. 2002 

SCA74 

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. 

**==> picture [214 x 95] intentionally omitted <==**

Printed in The Netherlands 

613514/01/pp8 Date of release: 2002 Sep 02 Document order number: 9397 750 10101 



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- [Supplier page](https://es.farnell.com/nexperia/bat74v-115/schottky-diode-dual-30v-0-2a-sot/dp/3439597RL)
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