# DIODE, SCHOTTKY, AEC-Q101, 30V, SOD-523 ![Product image](https://novapart.co/image/farnell:2814888/) **URL**: https://novapart.co/products/BAT54XV2T5G/diode-schottky-aec-q101-30v-sod-523 **SKU**: BAT54XV2T5G **Manufacturer**: ONSEMI **Price**: €0.0370 **Stock**: 200+ **Lead Time**: 102 days (indicative) ## Description Diode Configuration:Single; Repetitive Peak Reverse Voltage:30V; Average Forward Current:200mA; Forward Voltage Max:800mV; Forward Surge Current:600mA; Operati 42AC1707 ## Specifications | Parameter | Value | |---|---| | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 2Pins | | Product Range | - | | Qualification | AEC-Q101 | | Diode Mounting | Surface Mount | | Diode Case Style | SOD-523 | | Diode Configuration | Single | | Forward Voltage Max | 800mV | | Forward Surge Current | 600mA | | Reverse Recovery Time | 5ns | | Average Forward Current | 200mA | | Operating Temperature Max | 125°C | | Repetitive Peak Reverse Voltage | 30V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2814888/) BAT54XV2 ## Schottky Barrier Diodes These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited. **www.onsemi.com** ## **Features** - Extremely Fast Switching Speed - Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mA - S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable ## **30 VOLT SILICON HOT−CARRIER DETECTOR AND SWITCHING DIODES** - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant **MAXIMUM RATINGS** (TJ = 125 ° C unless otherwise noted) |**Characteristic**
~~ee~~|**Symbol**
~~ee~~|**Max**
~~ee~~|**Unit**
~~ee~~| |---|---|---|---| |Total Device Dissipation FR−5 Board,
(Note 1)
TA= 25°C
Derate above 25°C
~~ee~~|PD
~~ee~~|200
1.57
~~ee~~|mW
mW/°C
~~ee~~| |Forward Current (DC)
~~ee~~
~~ee~~|IF
~~ee~~
~~eee~~|200 Max
~~ee~~
~~eee~~|mA
~~ee~~
~~eee~~| |Non−Repetitive Peak Forward
Current, tp< 10 msec
~~ee~~
~~ee~~|IFSM
~~eee~~
~~eee~~|600
~~eee~~
~~eee~~|mA
~~eee~~
~~eee~~| |Repetitive Peak Forward Current
Pulse Wave = 1 sec, Duty Cycle = 66%
~~ee ~~
~~ee~~
~~EE~~|IFRM
~~eee~~
~~eee~~
~~eee~~|300
~~eee~~
~~eee~~
~~eee~~|mA
~~eee~~
~~eee~~
~~eee~~| |Thermal Resistance,
Junction−to−Ambient
~~ee ~~
~~EE~~|R JA
~~eee~~
~~eee~~|635
~~eee~~
~~eee~~|°C/W
~~eee~~
~~eee~~| |Junction and Storage Temperature
~~EE~~|TJ, Tstg
~~eee~~|−55 to 125
~~eee~~|°C
~~eee~~| **==> picture [94 x 87] intentionally omitted <==** **----- Start of picture text -----**
1 2
CATHODE ANODE
2
SOD−523
CASE 502
1
®
**----- End of picture text -----**
## **MARKING DIAGRAM** **==> picture [146 x 78] intentionally omitted <==** **----- Start of picture text -----**
JVM
1
JV = Device Code
M = Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
**----- End of picture text -----**
*Date Code orientation may vary depending upon manufacturing location. ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**†| |---|---|---| |BAT54XV2T1G|SOD−523
(Pb−Free)|3000 / Tape &
Reel| |BAT54XV2T5G|SOD−523
(Pb−Free)|8000 / Tape &
Reel| |SBAT54XV2T1G|SOD−523
(Pb−Free)|3000 / Tape &
Reel| - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2017 **February, 2017 − Rev. 11** **BAT54XV2T1/D** **BAT54XV2** **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**E**|**LECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise|**LECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise|**LECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise|**LECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise|n|oted)|oted)||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---| ||**Characteristic**|||||**Symbol**||**Min**|**Typ**|||**Max**|**Unit**| ||Reverse Breakdown Voltage
(IR= 10�A)|||||V(BR)R||30|−|||−|V| ||Total Capacitance
(VR= 1.0 V, f = 1.0 MHz)||||||CT|−|7.6|||10|pF| ||Reverse Leakage
(VR= 25 V)||||||IR|−|0.3|||2.0|�A| ||Forward Voltage
(IF= 0.1 mA)
(IF= 1.0 mA)
(IF= 10 mA)
(IF= 30 mA)
(IF= 100 mA)||||||VF|−
−
−
−
−|0.22
0.28
0.35
0.39
0.46|||0.24
0.32
0.40
0.50
0.80|V| ||Reverse Recovery Time
(IF= IR= 10 mA, IR(REC)= 1.0 mA) Figure 1||||||trr|−|−|||5.0|ns| ||820�|||||t|~~t~~||of 10 mA.
IF
IR
~~t~~rr
t
iR(REC)= 1 mA
OUTPUT PULSE
(IF= IR= 10 mA; measured
at iR(REC)= 1 mA)|||~~t~~|| ||+10 V|2 k
0.1�F
100�H|IF|0.1�F|||||||||| ||||||||p||||||| |||||||~~r~~|10%
90%||||||| |||||||||||||rr|| ||||||||||||||| |||||50�Input
Sampling
Oscilloscope|||||||||| ||||||||||||||| ||||||||||||||| ||||||||||||||| **Figure 1. Recovery Time Equivalent Test Circuit** **www.onsemi.com** **2** **BAT54XV2** **==> picture [489 x 388] intentionally omitted <==** **----- Start of picture text -----**
100 1000
TA = 150 ° C
100 TA = 125 ° C
10 150 ° C
10 TA = 85 ° C
125 ° C 1.0
1.0
85 ° C
25 ° C −40 ° C −55 ° C 0.1 TA = 25 ° C
0.1 0.01
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 20 25 30
VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Forward Voltage Figure 3. Leakage Current
14 25
Based on square wave currents
12 TJ = 25 ° C prior to surge
20
10
15
8
6 10
4
5
2
0 0
0 5 10 15 20 25 30 0.001 0.01 0.1 1 10 100 1000
VR, REVERSE VOLTAGE (VOLTS) tP, PULSE ON TIME (ms)
A)
�
, FORWARD CURRENT (mA) , REVERSE CURRENT (
IF IR
, TOTAL CAPACITANCE (pF)
T
C
, FORWARD SURGE MAX CURRENT (A)
IFSM
**----- End of picture text -----**
**Figure 4. Total Capacitance** **Figure 5. Forward Surge Current** **www.onsemi.com** **3** **BAT54XV2** ## **PACKAGE DIMENSIONS** **SOD−523** CASE 502 ISSUE E **==> picture [162 x 281] intentionally omitted <==** **----- Start of picture text -----**
−X−
—oe D — −Y−
E
1 2
2X b
0.08 f M a! [o] X Y [o]
TOP VIEW
A
id ob
c JL HE
SIDE VIEW
2X L
2X L2 i otos e
BOTTOM VIEW
**----- End of picture text -----**
NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. **==> picture [237 x 241] intentionally omitted <==** **----- Start of picture text -----**
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PRO-
TRUSIONS, OR GATE BURRS.
MILLIMETERS
DIM MIN NOM MAX
A 0.50 0.60 0.70
b 0.25 0.30 0.35
c 0.07 0.14 0.20
D 1.10 1.20 1.30
E 0.70 0.80 0.90
H E 1.50 1.60 1.70
L 0.30 REF
L2 0.15 0.20 0.25
===e
RECOMMENDED
SOLDERING FOOTPRINT*
2X 1.80
0.48 2X
0.40
PACKAGE
OUTLINE a8 DIMENSION: MILLIMETERS
Te
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
**----- End of picture text -----**
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