# Small Signal Schottky Diode, Single, 30 V, 200 mA, 350 mV, 600 mA, 150 °C

![Product image](https://novapart.co/image/farnell:1651157/)

**URL**: https://novapart.co/products/BAT54T1G/small-signal-schottky-diode-single-30-v-200-ma-350
**SKU**: BAT54T1G
**Manufacturer**: ONSEMI
**Price**: €0.0300
**Stock**: 1000+
**Lead Time**: 97 days (indicative)

## Description

Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:30V; Forward Current If(AV):200mA; Forward Voltage VF Max:350mV; Forward Surge Current Ifsm Max:600mA; Operating Temperatu

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 2Pins |
| Product Range | BAT54 |
| Qualification | AEC-Q101 |
| Diode Mounting | Surface Mount |
| Diode Case Style | SOD-123 |
| Diode Configuration | Single |
| Forward Voltage Max | 350mV |
| Forward Surge Current | 600mA |
| Reverse Recovery Time | 5ns |
| Average Forward Current | 200mA |
| Operating Temperature Max | 150°C |
| Repetitive Peak Reverse Voltage | 30V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1651157/)

## BAT54T1G, SBAT54T1G 

## Schottky Barrier Diodes 

These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. 

**http://onsemi.com** 

## **Features** 

- Extremely Fast Switching Speed 

- Low Forward Voltage − 0.35 Volts (Typ) @ IF = 10 mAdc 

- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

**30 VOLT SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODES** 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

1 2 **MAXIMUM RATINGS** (TJ = 125 ° C unless otherwise noted) CATHODE ANODE **Rating Symbol Value Unit** Reverse Voltage VR 30 V ~~a~~ **SOD−123** Forward Power Dissipation, FR−5 Board PF 2 **CASE 425** (Note 1) @ TA = 25 ° C 400 mW 1 **STYLE 1** ° Derate above 25 C ° 3.2 mW/ C ~~a~~ Thermal Resistance, R JL 174 ° C/W Junction−to−Case **MARKING DIAGRAM** ~~SC~~ Thermal Resistance, R JA 492 ° C/W Junction−to−Ambient SBM 1 Forward Current (DC) IF 200 Max mA ~~p_____}*} | ct~~ Non−Repetitive Peak Forward Current IFSM 600 mA tp < 10 msec SB = Device Code ~~PT~~ M = Date Code Repetitive Peak Forward Current IFRM 300 mA = Pb−Free Package Pulse Wave = 1 sec, Duty Cycle =  66% (Note: Microdot may be in either location) Junction Temperature TJ −55 to 125 ° C ~~———~~ Storage Temperature Range Tstg −55 to +150 ° C Stresses exceeding those listed in the Maximum Ratings table may damage the **ORDERING INFORMATION** device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. **Device Package Shipping**[†] 1. FR-5 = 1.0 x 0.75 x 0.062 in. 

|**Device**|**Package**|**Shipping**[†]|
|---|---|---|
|BAT54T1G|SOD−123<br>(Pb−Free)|3000 / Tape & Reel|
|SBAT54T1G|SOD−123<br>(Pb−Free)|3000 / Tape & Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2014 **April, 2014 − Rev. 10** 

**BAT54T1/D** 

## **BAT54T1G, SBAT54T1G** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise n|oted)|||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|Reverse Breakdown Voltage<br>(IR= 10�A)|V(BR)R|30|−|−|V|
|Total Capacitance<br>(VR= 1.0 V, f = 1.0 MHz)|CT|−|7.6|10|pF|
|Reverse Leakage<br>(VR= 25 V)|IR|−|0.5|2.0|�Adc|
|Forward Voltage<br>(IF= 0.1 mAdc)|VF|−|0.22|0.24|Vdc|
|Forward Voltage<br>(IF= 30 mAdc)|VF|−|0.41|0.5|Vdc|
|Forward Voltage<br>(IF= 100 mAdc)|VF|−|0.52|0.8|Vdc|
|Reverse Recovery Time<br>(IF= IR= 10 mAdc, IR(REC)= 1.0 mAdc, Figure 1)|trr|−|−|5.0|ns|
|Forward Voltage<br>(IF= 1.0 mAdc)|VF|−|0.29|0.32|Vdc|
|Forward Voltage<br>(IF= 10 mAdc)|VF|−|0.35|0.40|Vdc|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

**==> picture [485 x 178] intentionally omitted <==**

**----- Start of picture text -----**<br>
820  �<br>+10 V 2 k<br>100  � H IF 0.1  � F tr t p t IF<br>0.1  � F 10% t rr t<br>DUT<br>50  �  Output 50  �  Input 90%<br>Pulse Sampling iR(REC) = 1 mA<br>Generator Oscilloscope VR IR OUTPUT PULSE<br>INPUT SIGNAL<br>(IF = IR = 10 mA; measured<br>at iR(REC) = 1 mA)<br>Notes: 1. A 2.0 k �  variable resistor adjusted for a Forward Current (IF) of 10 mA.<br>Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.<br>Notes: 3. tp » trr<br>**----- End of picture text -----**<br>


**Figure 1. Recovery Time Equivalent Test Circuit** 

**http://onsemi.com** 

**2** 

**BAT54T1G, SBAT54T1G** 

**==> picture [238 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>125 ° C<br>85 ° C<br>10<br>150 ° C<br>1.0<br>25 ° C −40 ° C −55 ° C<br>0.1<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6<br>VF, FORWARD VOLTAGE (VOLTS)<br>, FORWARD CURRENT (mA)<br>IF<br>**----- End of picture text -----**<br>


**Figure 2. Forward Voltage** 

**==> picture [246 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>TA = 150 ° C<br>100<br>TA = 125 ° C<br>10<br>1.0<br>TA = 85 ° C<br>0.1<br>0.01 TA = 25 ° C<br>0.001<br>0 5 10 15 20 25 30<br>VR, REVERSE VOLTAGE (VOLTS)<br>A)<br>�<br>, REVERSE CURRENT (<br>IR<br>**----- End of picture text -----**<br>


**Figure 3. Leakage Current** 

**==> picture [237 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 5 10 15 20 25 30<br>VR, REVERSE VOLTAGE (VOLTS)<br>, TOTAL CAPACITANCE (pF)<br>T<br>C<br>**----- End of picture text -----**<br>


**Figure 4. Total Capacitance** 

**http://onsemi.com** 

**3** 

**BAT54T1G, SBAT54T1G** 

## **PACKAGE DIMENSIONS** 

**SOD−123** CASE 425−04 ISSUE G 

**==> picture [429 x 357] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>A NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI<br>A1 Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: INCH.<br>1<br>MILLIMETERS INCHES<br>ÂÂÂ DIM MIN NOM MAX MIN NOM MAX<br>A 0.94 1.17 1.35 0.037 0.046 0.053<br>ÂÂÂ A1 0.00 0.05 0.10 0.000 0.002 0.004<br>b 0.51 0.61 0.71 0.020 0.024 0.028<br>HE E c --- --- 0.15 --- --- 0.006<br>D 1.40 1.60 1.80 0.055 0.063 0.071<br>E 2.54 2.69 2.84 0.100 0.106 0.112<br>HE 3.56 3.68 3.86 0.140 0.145 0.152<br>L 0.25 --- --- 0.010 --- ---<br>0° --- 10° 0° --- 10°<br>2<br>ot<br>STYLE 1:<br>b L PIN 1. CATHODE2. ANODE<br>i ne C - iaeeeee<br>SOLDERING FOOTPRINT*<br>0.91<br>0.036<br>ÉÉ ÉÉ<br>ÉÉ ÉÉ 0.0481.22<br>1<br>ÉÉ ÉÉ<br>2.36<br>0.093<br>4.19<br>0.165<br>SCALE 10:1 mm<br>prot inches<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br>


**ON Semiconductor** and          are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).  SCILLC reserves the right to make changes without further notice to any products herein.  SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.  All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.  SCILLC does not convey any license under its patent rights nor the rights of others.  SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.  Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.  SCILLC is an Equal Opportunity/Affirmative Action Employer.  This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**LITERATURE FULFILLMENT** : **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative 

## **LITERATURE FULFILLMENT** : 

**http://onsemi.com** 

**BAT54T1/D** 

**4** 



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