# Small Signal Schottky Diode, Dual Common Anode, 30 V, 200 mA, 800 mV, 600 mA, 125 °C

![Product image](https://novapart.co/image/farnell:2463452RL/)

**URL**: https://novapart.co/products/BAT54AWT1G/small-signal-schottky-diode-dual-common-anode-30-v
**SKU**: BAT54AWT1G
**Manufacturer**: ONSEMI
**Price**: €0.0390
**Stock**: 1000+
**Lead Time**: 83 days (indicative)

## Description

Diode Configuration:Dual Common Anode; Repetitive Reverse Voltage Vrrm Max:30V; Forward Current If(AV):200mA; Forward Voltage VF Max:800mV; Forward Surge Current Ifsm Max:600mA; Operating Temper

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | BAT54 |
| Qualification | AEC-Q101 |
| Diode Mounting | Surface Mount |
| Diode Case Style | SOT-323 |
| Diode Configuration | Dual Common Anode |
| Forward Voltage Max | 800mV |
| Forward Surge Current | 600mA |
| Reverse Recovery Time | 5ns |
| Average Forward Current | 200mA |
| Operating Temperature Max | 125°C |
| Repetitive Peak Reverse Voltage | 30V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2463452RL/)

## BAT54AW 

## Schottky Barrier Diodes 

These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. 

**www.onsemi.com** 

## **Features** 

- Extremely Fast Switching Speed 

- Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mAdc 

- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

## **30 VOLT SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODES** 

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* **MAXIMUM RATINGS** (TJ = 125 ° C unless otherwise noted) *® **SOT−323 Rating Symbol Value Unit CASE 419 STYLE 4** Reverse Voltage VR 30 V Forward Power Dissipation PF CATHODE @ TDerate above 25A = 25 ° C ° C 2001.6 mW/mW ° C ANODE3 1 2 Forward Current (DC) IF 200 Max mA CATHODE Non−Repetitive Peak Forward Current IFSM mA tp < 10 msec 600 **MARKING DIAGRAM** Repetitive Peak Forward Current IFRM mA Pulse Wave = 1 sec, 300 Duty Cycle =  66% B7M Junction Temperature TJ −55 to 150 ° C Storage Temperature Range Tstg −55 to +150 ° C 1 B7 = Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the M = Date Code* device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ~~=e~~ = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. **ORDERING INFORMATION Device Package Shipping**[†] BAT54AWT1G SOT−323 3,000/Tape & Reel (Pb−Free) SBAT54AWT1G SOT−323 3,000/Tape & Reel ~~==~~ (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications *For additional information on our Pb−Free strategy and soldering details, please Brochure, BRD8011/D. download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Publication Order Number: **BAT54AWT1/D** 

**1** 

© Semiconductor Components Industries, LLC, 2015 **October, 2015 − Rev. 5** 

## **BAT54AW** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) (EACH DIODE) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless ot|herwise noted)|(EACH DIODE|)|||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|Reverse Breakdown Voltage<br>(IR= 10�A)|V(BR)R|30|−|−|V|
|Total Capacitance<br>(VR= 1.0 V, f = 1.0 MHz)|CT|−|7.6|10|pF|
|Reverse Leakage<br>(VR= 25 V)|IR|−|0.5|2.0|�Adc|
|Forward Voltage<br>(IF= 0.1 mA)<br>(IF= 1.0 mA)<br>(IF= 10 mA)<br>(IF= 30 mA)<br>(IF= 100 mA)|VF|−<br>−<br>−<br>−<br>−|0.22<br>0.29<br>0.35<br>0.41<br>0.52|0.24<br>0.32<br>0.40<br>0.50<br>0.80|V|
|Reverse Recovery Time<br>(IF= IR= 10 mAdc, IR(REC)= 1.0 mAdc, Figure 1)|trr|−|−|5.0|ns|



**==> picture [486 x 178] intentionally omitted <==**

**----- Start of picture text -----**<br>
820  �<br>+10 V 2 k<br>100  � H IF 0.1  � F tr t p T IF<br>0.1  � F 10% t rr T<br>DUT<br>50  �  OUTPUT 50  �  INPUT 90%<br>PULSE SAMPLING iR(REC) = 1 mA<br>GENERATOR OSCILLOSCOPE VR IR OUTPUT PULSE<br>INPUT SIGNAL<br>(IF = IR = 10 mA; measured<br>at iR(REC) = 1 mA)<br>Notes: 1. A 2.0 k �  variable resistor adjusted for a Forward Current (IF) of 10 mA.<br>Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.<br>Notes: 3. tp » trr<br>**----- End of picture text -----**<br>


**Figure 1. Recovery Time Equivalent Test Circuit** 

**www.onsemi.com** 

**2** 

**BAT54AW** 

**==> picture [238 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>125 ° C<br>85 ° C<br>10<br>150 ° C<br>1.0<br>25 ° C −40 ° C −55 ° C<br>0.1<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6<br>VF, FORWARD VOLTAGE (V)<br>, FORWARD CURRENT (mA)<br>IF<br>**----- End of picture text -----**<br>


**Figure 2. Forward Voltage** 

**==> picture [245 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>TA = 150 ° C<br>100<br>T A  = 125 ° C<br>10<br>1.0<br>T A  = 85 ° C<br>0.1<br>0.01 TA = 25 ° C<br>0.001<br>0 5 10 15 20 25 30<br>VR, REVERSE VOLTAGE (V)<br>A)<br>�<br>, REVERSE CURRENT (<br>IR<br>**----- End of picture text -----**<br>


**Figure 3. Leakage Current** 

**==> picture [237 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 5 10 15 20 25 30<br>VR, REVERSE VOLTAGE (V)<br>, TOTAL CAPACITANCE (pF)<br>T<br>C<br>**----- End of picture text -----**<br>


**Figure 4. Total Capacitance** 

**www.onsemi.com** 

**3** 

**BAT54AW** 

## **PACKAGE DIMENSIONS** 

**SOT−323 (SC−70)** CASE 419−04 ISSUE N 

**==> picture [482 x 352] intentionally omitted <==**

**----- Start of picture text -----**<br>
D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>e1 2. CONTROLLING DIMENSION: INCH.<br>MILLIMETERS INCHES<br>3 DIM MIN NOM MAX MIN NOM MAX<br>A 0.80 0.90 1.00 0.032 0.035 0.040<br>HE E A1 0.00 0.05 0.10 0.000 0.002 0.004<br>1 2 A2 0.70 REF 0.028 REF<br>b 0.30 0.35 0.40 0.012 0.014 0.016<br>c 0.10 0.18 0.25 0.004 0.007 0.010<br>i( a nr S D 1.80 2.10 SS 2.20 e 0.071 0.083 0.087<br>b E 1.15 1.24 1.35 0.045 0.049 0.053<br>e 1.20 1.30 1.40 0.047 0.051 0.055<br>e e1 0.65 BSC 0.026 BSC<br>L 0.20 0.38 0.56 0.008 0.015 0.022<br>H E 2.00 2.10 2.40 0.079 0.083 0.095<br>A A2 c STYLE 4:PIN 1. CATHODE<br>2. CATHODE<br>3. ANODE<br>0.05 (0.002) A1 [SO] L [L]<br>_ [HED,]<br>SOLDERING FOOTPRINT*<br>0.65<br>0.65 0.025<br>0.025<br>1.9<br>_ ab . 0.075<br>0.9<br>0.035<br>0.7<br>Eh<br>0.028<br>SCALE 10:1 mm<br>Tate _ inches<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

**ON Semiconductor** and          are registered trademarks of Semiconductor Components Industries, LLC (SCILLC).  SCILLC reserves the right to make changes without further notice to any products herein.  SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.  All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.  SCILLC does not convey any license under its patent rights nor the rights of others.  SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.  Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.  SCILLC is an Equal Opportunity/Affirmative Action Employer.  This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

## **LITERATURE FULFILLMENT** : 

Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Email** : orderlit@onsemi.com 

**N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** USA/Canada **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit Phone: 421 33 790 2910 **Japan Customer Focus Center** For additional information, please contact your local Phone: 81−3−5817−1050 Sales Representative 

**www.onsemi.com** 

**BAT54AWT1/D** 

**4** 



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---

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