# Small Signal Schottky Diode, Dual Common Anode, 30 V, 200 mA, 800 mV, 600 mA, 150 °C ![Product image](https://novapart.co/image/farnell:2463392RL/) **URL**: https://novapart.co/products/BAT54ALT1G/small-signal-schottky-diode-dual-common-anode-30-v **SKU**: BAT54ALT1G **Manufacturer**: ONSEMI **Price**: €0.0310 **Stock**: 1000+ **Lead Time**: 97 days (indicative) ## Description Diode Configuration:Dual Common Anode; Repetitive Reverse Voltage Vrrm Max:30V; Forward Current If(AV):200mA; Forward Voltage VF Max:800mV; Forward Surge Current Ifsm Max:600mA; Op ## Specifications | Parameter | Value | |---|---| | Svhc | No SVHC (25-Jun-2025) | | No. Of Pins | 3Pins | | Product Range | BAT54 | | Qualification | AEC-Q101 | | Diode Mounting | Surface Mount | | Diode Case Style | SOT-23 | | Diode Configuration | Dual Common Anode | | Forward Voltage Max | 800mV | | Forward Surge Current | 600mA | | Reverse Recovery Time | 5ns | | Average Forward Current | 200mA | | Operating Temperature Max | 150°C | | Repetitive Peak Reverse Voltage | 30V | ## Datasheet 📄 [Download PDF](https://novapart.co/datasheet/farnell:2463392RL/) ## BAT54AL ## Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. ## **Features** - Extremely Fast Switching Speed - Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mAdc - S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable ## **www.onsemi.com** ## **30 VOLT SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODES** • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant **MAXIMUM RATINGS** (TJ = 125 ° C unless otherwise noted) **SOT−23 (TO−236) CASE 318 Rating Symbol Value Unit STYLE 12** Reverse Voltage VR 30 V CATHODE ANODE Forward Power Dissipation PF 1 @ TDerate above 25A = 25 ° C ° C 2251.8 mW/mW ° C 3 2 CATHODE Forward Current (DC) IF 200 Max mA **MARKING DIAGRAM** Non−Repetitive Peak Forward Current IFSM mA tp < 10 msec 600 Repetitive Peak Forward Current IFRM mA Pulse Wave = 1 sec, 300 B6M Duty Cycle = 66% Junction Temperature TJ −55 to 150 ° C 1 Storage Temperature Range Tstg −55 to +150 ° C B6 = Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the M = Date Code* device. If any of these limits are exceeded, device functionality should not be ~~=e~~ = Pb−Free Package assumed, damage may occur and reliability may be affected. (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. **ORDERING INFORMATION Device Package Shipping**[†] BAT54ALT1G SOT−23 3,000/Tape & Reel (Pb−Free) SBAT54ALT1G SOT−23 3,000/Tape & Reel (Pb−Free) BAT54ALT3G SOT−23 10,000/Tape & Reel (Pb−Free) SBAT54ALT3G SOT−23 10,000/Tape & Reel (Pb−Free) ~~===~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 1997 **October, 2016 − Rev. 14** **BAT54ALT1/D** **BAT54AL** **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) (EACH DIODE) |**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise|noted) (EACH|DIODE)|||| |---|---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |Reverse Breakdown Voltage
(IR= 10�A)|V(BR)R|30|−|−|V| |Total Capacitance
(VR= 1.0 V, f = 1.0 MHz)|CT|−|7.6|10|pF| |Reverse Leakage
(VR= 25 V)|IR|−|0.5|2.0|�Adc| |Forward Voltage
(IF= 0.1 mA)
(IF= 1.0 mA)
(IF= 10 mA)
(IF= 30 mA)
(IF= 100 mA)|VF|−
−
−
−
−|0.22
0.29
0.35
0.41
0.52|0.24
0.32
0.40
0.50
0.80|V| |Reverse Recovery Time
(IF= IR= 10 mAdc, IR(REC)= 1.0 mAdc, Figure 1)|trr|−|−|5.0|ns| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **==> picture [486 x 177] intentionally omitted <==** **----- Start of picture text -----**
820 �
+10 V 2 k
100 � H IF 0.1 � F tr t p T IF
0.1 � F 10% t rr T
DUT
50 � OUTPUT 50 � INPUT 90%
PULSE SAMPLING iR(REC) = 1 mA
GENERATOR OSCILLOSCOPE VR IR OUTPUT PULSE
INPUT SIGNAL
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Notes: 1. A 2.0 k � variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
**----- End of picture text -----**
**Figure 1. Recovery Time Equivalent Test Circuit** **www.onsemi.com** **2** **BAT54AL** **==> picture [238 x 170] intentionally omitted <==** **----- Start of picture text -----**
100
125 ° C
85 ° C
10
150 ° C
1.0
25 ° C −40 ° C −55 ° C
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6
VF, FORWARD VOLTAGE (VOLTS)
, FORWARD CURRENT (mA)
IF
**----- End of picture text -----**
**Figure 2. Forward Voltage** **==> picture [245 x 170] intentionally omitted <==** **----- Start of picture text -----**
1000
TA = 150 ° C
100
T A = 125 ° C
10
1.0
T A = 85 ° C
0.1
0.01 TA = 25 ° C
0.001
0 5 10 15 20 25 30
VR, REVERSE VOLTAGE (VOLTS)
A)
�
, REVERSE CURRENT (
IR
**----- End of picture text -----**
**Figure 3. Leakage Current** **==> picture [237 x 171] intentionally omitted <==** **----- Start of picture text -----**
14
12
10
8
6
4
2
0
0 5 10 15 20 25 30
VR, REVERSE VOLTAGE (VOLTS)
, TOTAL CAPACITANCE (pF)
T
C
**----- End of picture text -----**
**Figure 4. Total Capacitance** **www.onsemi.com** **3** **BAT54AL** ## **PACKAGE DIMENSIONS** **SOT−23 (TO−236)** CASE 318−08 ISSUE AR **==> picture [463 x 328] intentionally omitted <==** **----- Start of picture text -----**
D NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
3 THE BASE MATERIAL.
o E eat [|] HE T = 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.
1 2
MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
L A 0.89 1.00 1.11 0.035 0.039 0.044
3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020
e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008
TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120
E 1.20 1.30 1.40 0.047 0.051 0.055
e 1.78 1.90 2.04 0.070 0.075 0.080
L 0.30 0.43 0.55 0.012 0.017 0.022
A L1 0.35 0.54 0.69 0.014 0.021 0.027
H E 2.10 2.40 2.64 0.083 0.094 0.104
T 0 ° −−− 10 ° 0 ° −−− 10 °
a A1 SIDE VIEW SEE VIEW C c STYLE 12:
END VIEW PIN 1. CATHODE
2. CATHODE
3. ANODE
RECOMMENDED
SOLDERING FOOTPRINT
3X
2.90 r o 0.90
LO \ ct
3X 0.80 | LL 0.95
PITCH
DIMENSIONS: MILLIMETERS
**----- End of picture text -----**
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