# Small Signal Schottky Diode, Dual Series, 4 V, 130 mA, 600 mV, 125 °C
**URL**: https://novapart.co/products/BAT1704WH6327XTSA1/small-signal-schottky-diode-dual-series-4-v-130-ma
**SKU**: BAT1704WH6327XTSA1
**Manufacturer**: INFINEON
**Price**: €0.0910
**Stock**: 1000+
**Lead Time**: 113 days (indicative)
## Description
Diode Configuration:Dual Series; Repetitive Reverse Voltage Vrrm Max:4V; Forward Current If(AV):130mA; Forward Voltage VF Max:600mV; Forward Surge Current Ifsm Max:-; Operating Temper
## Specifications
| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | BAT17 |
| Qualification | - |
| Diode Mounting | Surface Mount |
| Diode Case Style | SOT-323 |
| Diode Configuration | Dual Series |
| Forward Voltage Max | 600mV |
| Forward Surge Current | - |
| Reverse Recovery Time | - |
| Average Forward Current | 130mA |
| Operating Temperature Max | 125°C |
| Repetitive Peak Reverse Voltage | 4V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2725755/)
## **BAT17-04W**
## **Series silicon RF Schottky diode pair**
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## **Product description**
These Infineon RF Schottky diodes are silicon low barrier N-type devices with an integrated guard ring on-chip for overvoltage protection. Their low barrier height, small forward voltage and low junction capacitance, make BAT17-04W a suitable choice for mixer and detector applications at frequencies as high as 6 GHz.
## **Feature list**
- Low inductance _L_ s = 1.4 nH (typical)
- Low capacitance _C_ = 0.61 pF (typical) at frequency _f_ = 1 MHz
- Industry standard SOT323-3 package (2.1 mm x 2 mm x 0.9 mm)
- Pb-free, RoHS compliant and halogen free
## **Product validation**
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
## **Potential applications**
For mixers and detectors in:
- Wearables
- Smart metering
- Telematic systems
- Set top boxes
## **Device information**
## **Table 1 Part information**
|**Table 1**
**Part information**|||||
|---|---|---|---|---|
|**Product name / Ordering code**|**Package**|**Pin configuration**|**Marking**|**Pieces / Reel**|
|BAT17-04W / BAT1704WH6327XTSA1|SOT323-3|Series pair|54s|3 k|
_**Attention** :_ _**ESD (Electrostatic discharge) sensitive device, observe handling precautions!**_
Please read the Important Notice and Warnings at the end of this document
Datasheet **www.infineon.com**
2018-06-30
**BAT17-04W Series silicon RF Schottky diode pair**
**==> picture [105 x 47] intentionally omitted <==**
## **Table of contents**
## **Table of contents**
||**Product description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
|---|---|
||**Feature list**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
||**Device information**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2|
|**1**|**Absolute maximum ratings**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2|
|**2**|**Electrical performance in test fixture**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3|
|2.1|Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3|
|2.2|Characteristic curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4|
|**3**|**Thermal characteristics**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6|
|**4**|**Package information SOT323-3**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8|
||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9|
||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10|
## **1 Absolute maximum ratings**
## **Table 2 Absolute maximum ratings at** _**T**_ **A = 25 °C, unless otherwise specified**
|**Parameter**|**Symbol**|**Values**|**Values**|**Unit**|**Note or test condition**|
|---|---|---|---|---|---|
|||**Min.**|**Max.**|||
|Diode reverse voltage|_V_R|–|4|V||
|Forward current|_I_F|–|130|mA||
|Total power dissipation|_P_TOT|–|150|mW|_T_S≤ 100 °C**_1)_**|
|Junction temperature|_T_J|–|150|°C||
|Operating temperature|_T_OP|-55|125|||
|Storage temperature|_T_STG|-55|150|||
_**Attention** :_ _**Stresses above the maximum values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the component.**_
> 1 _T_ S is the soldering point temperature.
Datasheet
2
2018-06-30
**BAT17-04W Series silicon RF Schottky diode pair**
**==> picture [105 x 47] intentionally omitted <==**
## **Electrical performance in test fixture**
## **2 Electrical performance in test fixture**
## **2.1 Electrical characteristics**
|**2.1**
**Electrical characteristics**|**2.1**
**Electrical characteristics**|**2.1**
**Electrical characteristics**|**2.1**
**Electrical characteristics**|**2.1**
**Electrical characteristics**|**2.1**
**Electrical characteristics**|**2.1**
**Electrical characteristics**|
|---|---|---|---|---|---|---|
|**Table 3**
**Electrical characteristics at****_T_A** **= 25 °C, unless otherwise specified**|||||||
|**Parameter**|**Symbol**|**Values**|||**Unit**|**Note or test condition**|
|||**Min.**|**Typ.**|**Max.**|||
|Breakdown voltage|_V_BR|4|–|–|V|_I_R= 10 μA|
|Reverse current|_I_R|–|–|0.25|μA|_V_R= 3 V|
|||–|–|1.25||_V_R = 3 V,_T_A = 60 °C**_1)_**|
|||–|–|10||_V_R = 4 V|
|Forward voltage|_V_F|0.2|0.27|0.35|V|_I_F= 0.1 mA|
|||0.25|0.34|0.45||_I_F= 1 mA|
|||0.35|0.42|0.60||_I_F= 10 mA|
|Forward voltage matching|Δ_V_F|–|–|20|mV|_I_F= 1 mA**_2)_**|
|Diferential forward resistance|_R_F|–|8|15|Ω|_I_F= 5 mA|
|Capacitance|_C_|0.4|0.61|0.7|pF|_V_R= 0 V,_f_= 1 MHz|
|Inductance|_L_S|–|1.4|–|nH||
> 1 Parameter is not subject to production test, min/max values are specified by design.
> 2 Δ _V_ F is the difference between lowest and highest _V_ F in a multiple diode component.
Datasheet
3
2018-06-30
**BAT17-04W Series silicon RF Schottky diode pair**
**==> picture [105 x 47] intentionally omitted <==**
## **Electrical performance in test fixture**
## **2.2 Characteristic curves**
At _T_ A = 25 °C, unless otherwise specified
**==> picture [357 x 278] intentionally omitted <==**
**----- Start of picture text -----**
0.7
0.65
0.6
0.55
0.5
0.45
0.4
0.35
0.3
0 0.5 1 1.5 2 2.5 3 3.5 4
V [V]
R
C [pF]
**----- End of picture text -----**
**Figure 1 Capacitance** _**C**_ **vs. reverse voltage** _**V**_ **R at frequency** _**f**_ **= 1 MHz**
**==> picture [357 x 278] intentionally omitted <==**
**----- Start of picture text -----**
10 [2]
10 [1]
10 [0]
10 [-1]
10 [-2]
10 [-3]
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V [V]
F
[mA]
F
I
**----- End of picture text -----**
**Figure 2 Forward current** _**I**_ **F vs. forward voltage** _**V**_ **F**
Datasheet
4
2018-06-30
**BAT17-04W Series silicon RF Schottky diode pair**
**==> picture [105 x 47] intentionally omitted <==**
## **Electrical performance in test fixture**
**==> picture [357 x 278] intentionally omitted <==**
**----- Start of picture text -----**
10 [2]
10 [1]
10 [0]
0 0.5 1 1.5 2 2.5 3 3.5 4
V [V]
R
[nA]
R
I
**----- End of picture text -----**
**Figure 3 Reverse current** _**I**_ **R vs. reverse voltage** _**V**_ **R**
_Note: The curves shown in this chapter have been generated using typical devices but shall not be understood as a guarantee that all devices have identical characteristic curves._
Datasheet
5
2018-06-30
**BAT17-04W Series silicon RF Schottky diode pair**
**==> picture [105 x 47] intentionally omitted <==**
## **Thermal characteristics**
## **3 Thermal characteristics**
**==> picture [184 x 9] intentionally omitted <==**
**----- Start of picture text -----**
Table 4 Thermal resistance
**----- End of picture text -----**
**==> picture [512 x 364] intentionally omitted <==**
**----- Start of picture text -----**
Parameter Sym Values Unit Note or test condition
bol
Min. Typ. Max.
Thermal resistance R thJS – 330 – K/W T S = 100 °C [1)]
(junction - soldering point)
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
T [°C]
S
[mA]
F
I
**----- End of picture text -----**
**Figure 4 Permissible forward current** _**I**_ **F in DC operation**
> 1 For _R_ thJS in other conditions refer to the curves in this chapter.
Datasheet
6
2018-06-30
**BAT17-04W Series silicon RF Schottky diode pair**
**==> picture [105 x 47] intentionally omitted <==**
## **Thermal characteristics**
**==> picture [357 x 278] intentionally omitted <==**
**Figure 5 Thermal resistance** _**R**_ **thJS in pulse operation**
**==> picture [357 x 278] intentionally omitted <==**
**Figure 6 Permissible forward current ratio** _**I**_ **Fmax/** _**I**_ **DC in pulse operation**
Datasheet
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2018-06-30
**BAT17-04W Series silicon RF Schottky diode pair**
**4 Package information SOT323-3**
## **Package information SOT323-3**
**==> picture [219 x 147] intentionally omitted <==**
**----- Start of picture text -----**
1.25 ±0.1 - A _
S o
0.1 MIN. TL 4a 0.1
Elon 0.2 A 2.1±0.1
T t p
taf | |
MOLD FLASH, PROTRUSION OR GATE BURRS OF 0.2 MM MAXIMUM PER SIDE ARE NOT INCLUDED
ALL DIMENSIONS ARE IN UNITS MM
THE DRAWING IS IN COMPLIANCE WITH ISO 128 & PROJECTION METHOD 1 [ ae ]
±0.1
0.9
+0.10 -0.05
0.15
MAX.
0.1
3x
1 0.1
0.65
2±0.2 0.65 3
2 +0.100.3-0.05
**----- End of picture text -----**
**Figure 7 Package outline**
## **Figure 8 Foot print**
**==> picture [140 x 40] intentionally omitted <==**
**----- Start of picture text -----**
TYPE CODE
— 1
NOTE OF MANUFACTURER
MONTH
YEAR
**----- End of picture text -----**
**Figure 9 Marking layout example**
**==> picture [172 x 116] intentionally omitted <==**
**----- Start of picture text -----**
4
2 0.2
OF
( [O] Oo [/] — _ [O] +
INDEX MARKINGPIN 1 2.15 1.1
ALL DIMENSIONS ARE IN UNITS MM
THE DRAWING IS IN COMPLIANCE WITH ISO 128 & PROJECTION METHOD 1 [ ae ]
8
1.9 2.3
**----- End of picture text -----**
## **Figure 10 Tape information**
Datasheet
8
2018-06-30
**BAT17-04W Series silicon RF Schottky diode pair**
**==> picture [105 x 47] intentionally omitted <==**
## **Revision history**
## **Revision history**
|**Document**
**version**|**Date of**
**release**|**Description of changes**|
|---|---|---|
|1.0|2018-09-07|•
Change from series datasheet to individual one
•
Initial release of datasheet
•
Typical values and curves updated to the values of the production
(No product or process change behind)
•
Maximum values tightened (No product or process change behind)
•
Typical curves removed|
Datasheet
9
2018-06-30
## **Trademarks**
All referenced product or service names and trademarks are the property of their respective owners.
**Edition 2018-06-30 IMPORTANT NOTICE Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”) . **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding the **© 2018 Infineon Technologies AG** application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of **All Rights Reserved.** any kind, including without limitation warranties of non-infringement of intellectual property rights of any **Do you have a question about any** third party. **aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-say1531919707504** Infineon Technologies in customer’s applications.
## **WARNINGS**
Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
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