# Small Signal Diode, Dual Series, 120 V, 200 mA, 1.25 V, 50 ns, 2 A

![Product image](https://novapart.co/image/farnell:3606701/)

**URL**: https://novapart.co/products/BAS31-D87Z/small-signal-diode-dual-series-120-v-200-ma-125-50
**SKU**: BAS31-D87Z
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Small Signal Diodes
**Price**: €0.0330
**Stock**: 10+
**Lead Time**: 92 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Qualification | - |
| Diode Mounting | Surface Mount |
| Diode Case Style | SOT-23 |
| Diode Configuration | Dual Series |
| Forward Voltage Max | 1.25V |
| Forward Surge Current | 2A |
| Reverse Recovery Time | 50ns |
| Average Forward Current | 200mA |
| Operating Temperature Max | 150°C |
| Repetitive Peak Reverse Voltage | 120V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3606701/)

**DATA SHEET www.onsemi.com** ~~ee~~ 

## Small Signal Diode 

3 BAS31 2 X 1 **SOT−23 ABSOLUTE MAXIMUM RATINGS** (TA = 25 ° C, unless otherwise noted) **CASE 318BM** (Note 1, 2) **Symbol Parameter Ratings Unit MARKING DIAGRAM** VRRM Maximum Repetitive Reverse Voltage 120 V 3 IF(AV) Average Rectified Forward Current 200 mA L21M IFSM Non−Repetitive Pulse Width = 1.0 second 1.0 A Peak Forward 1 2 Surge Current Pulse Width = 1.0 microsecond 2.0 L21 = Specific Device Code TSTG Storage Temperature Range −55 to ° C M = Date Code +150 TJ Operating Junction Temperature 150 ° C ~~=e~~ **CONNECTION DIAGRAM** Stresses exceeding those listed in the Maximum Ratings table may damage the 3 device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are based on a maximum junction temperature of 150 ° C. 2. These are steady−state limits. **onsemi** should be consulted on applications involving pulsed or low− duty−cycle operations. 1 2 **THERMAL CHARACTERISTICS** (TA = 25 ° C, unless otherwise noted) ~~a~~ **Symbol Parameter Ratings Unit ORDERING INFORMATION** PD Power Dissipation 350 ° C/W **Device Package Reel Shipping**[†] R JA Thermal Resistance, Junction−to−Ambient 357 BAS31 SOT−23 3L 7” 3000 / Tape (Pb−Free, & Reel Halide Free) BAS31−D87Z 13” 10000 / Tape & Reel ~~=—_e~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

**ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**|**ELECTRICAL CHARACTERISTICS**(TJ = 25J = 25= 25°C unless otherwise noted)|C unless otherwise noted)||||
|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Conditions**|**Min**|**Max**|**Unit**|
|VR|Breakdown Voltage|IR= 1.0 mA|120|−|V|
|VF|Forward Voltage|IF= 10 mA<br>~~a~~|−<br>~~a~~|750<br>~~a~~|mV<br>~~a~~|
|||IF= 50 mA<br>~~a~~|−<br>~~a~~|840<br>~~a~~|mV<br>~~a~~|
|||IF= 100 mA<br>~~a~~|−<br>~~a~~|900<br>~~a~~|mV<br>~~a~~|
|||IF= 200 mA<br>~~a~~|−<br>~~a~~|1.00<br>~~a~~|V<br>~~a~~|
|||IF= 400 mA<br>~~a~~|−<br>~~a~~|1.25<br>~~a~~|V<br>~~a~~|
|IR<br>~~a~~|Reverse Current<br>~~a~~|VR= 90 V<br>~~a~~<br>~~a~~|−<br>~~a~~<br>~~a~~|100<br>~~a~~<br>~~a~~|nA<br>~~a~~<br>~~a~~|
|||VR= 90 V, TA= 150°C<br>~~a~~|−<br>~~a~~|100<br>~~a~~|A<br>~~a~~|
|CT<br>~~a~~|Total Capacitance<br>~~a~~|VR= 0 V, f = 1.0 MHz<br>~~a~~|−<br>~~a~~|35<br>~~a~~|pF<br>~~a~~|
|trr<br>~~a~~|Reverse Recovery Time<br>~~a~~|IF= IR= 30 mA, IRR= 3.0 mA, RL= 100<br>~~a~~|−<br>~~a~~|50<br>~~a~~|ns<br>~~a~~|



Publication Order Number: **BAS31/D** 

**1** 

© Semiconductor Components Industries, LLC, 2001 **May, 2023 − Rev. 3** 

**BAS31** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
325 Ta = 25 ° C<br>300<br>275<br>3 5 10 20 30 50 100<br>IR, REVERSE CURRENT ( � A)<br>Figure 1. Reverse Voltage vs. Reverse Current BV −<br>1.0 to 100  � A<br>100 Ta = 25 ° C<br>90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>180 200 220 240 255<br>VR, REVERSE VOLTAGE (V)<br>GENERAL RULE: The Reverse Current of a diode will approximately<br>double for every ten (10) Degree C increase in Temperature<br>Figure 3. Reverse Current vs. Reverse Voltage IR −<br>180 to 255 V<br>725 Ta = 25 ° C<br>700<br>650<br>600<br>550<br>500<br>450<br>0.1 0.2 0.3 0.5 1 2 3 5 10<br>IF, FORWARD CURRENT (mA)<br>, REVERSE VOLTAGE (V)<br>R<br>V<br>, REVERSE CURRENT (nA)<br>IR<br>, FORWARD VOLTAGE (mV)<br>F<br>V<br>**----- End of picture text -----**<br>


**Figure 5. Forward Voltage vs. Forward Current VF − 0.1 to 10 mA** 

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**----- Start of picture text -----**<br>
50 Ta = 25 ° C<br>40<br>30<br>20<br>10<br>0<br>55 75 95 115 135 155 175 195<br>VR, REVERSE VOLTAGE (V)<br>GENERAL RULE: The Reverse Current of a diode will approximately<br>double for every ten (10) Degree C increase in Temperature<br>Figure 2. Reverse Current vs. Reverse Voltage IR −<br>55 to 205 V<br>Ta = 25 ° C<br>450<br>400<br>350<br>300<br>250<br>1 2 3 5 10 20 30 50 100<br>IF, FORWARD CURRENT ( � A)<br>, REVERSE CURRENT (nA)<br>IR<br>, FORWARD VOLTAGE (mV)<br>F<br>V<br>**----- End of picture text -----**<br>


**Figure 4. Forward Voltage vs. Forward Current VF − 1.0 to 100 � A** 

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**----- Start of picture text -----**<br>
1.4 Ta = 25 ° C<br>1.3<br>1.2<br>1.1<br>1<br>0.9<br>0.8<br>0.7<br>10 20 30 50 100 200 300 500 800<br>IF, FORWARD CURRENT (mA)<br>, FORWARD VOLTAGE (mV)<br>F<br>V<br>**----- End of picture text -----**<br>


**Figure 6. Forward Voltage vs. Forward Current VF − 10 to 800 mA** 

**www.onsemi.com** 

**2** 

**BAS31** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** (CONTINUED) 

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**----- Start of picture text -----**<br>
800<br>Ta = −40 ° C<br>600 Ta = 25 ° C<br>400<br>Ta = +80 ° C<br>200<br>0.001 0.003 0.01 0.03 0.1 0.3 1 3 10<br>IF, FORWARD CURRENT (mA)<br>, FORWARD VOLTAGE (mV)<br>F<br>V<br>**----- End of picture text -----**<br>


**Figure 7. Forward Voltage vs. Ambient Temperature VF − 1.0 � A − 10 mA (− 40 to +80** � **C)** 

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**----- Start of picture text -----**<br>
1.3 Ta = 25 ° C<br>1.2<br>1.1<br>1<br>0.9<br>0.8<br>0 2 4 6 8 10 12 14 15<br>REVERSE VOLTAGE (V)<br>CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 8. Capacitance vs. Reverse Voltage** 

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**----- Start of picture text -----**<br>
50<br>40<br>30<br>IF = IR = 30 mA<br>Rloop = 100  �<br>20<br>1 1.5 2 2.5 3<br>Irr, REVERSE RECOVERY CURRENT (mA)<br>REVERSE RECOVERY (nS)<br>**----- End of picture text -----**<br>


**Figure 9. Reverse Recovery Time vs. Reverse Recovery Current (Irr)** 

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**----- Start of picture text -----**<br>
500<br>400 I R − FORWARD CURRENT<br>STEADY STATE − mA<br>300<br>200<br>100<br>Io − AVERAGE RECTIFIED<br>CURRENT − mA<br>0<br>0 50 100 150<br>TA, AMBIENT TEMPERATURE ( ° C)<br>I, CURRENT (mA)<br>**----- End of picture text -----**<br>


**Figure 10. Average Rectified Current (IO) and Forward Current (IF) vs. Ambient Temperature (TA)** 

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**----- Start of picture text -----**<br>
500<br>400<br>300<br>SOT−23 Pkg<br>200<br>100<br>0<br>0 50 100 150 200<br>IO, AVERAGE TEMPERATURE ( ° C)<br>, POWER DISSIPATION (mW)<br>D<br>P<br>**----- End of picture text -----**<br>


**Figure 11. Power Derating Curve** 

**www.onsemi.com** 

**3** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

## **SOT−23** CASE 318BM ISSUE A 

## DATE 01 SEP 2021 

**GENERIC** DETAILS, **MARKING DIAGRAM*** SEMICONDUCTOR MANUAL, XXXM To] 1 *This information is generic. Please refer to device data sheet for actual part marking. XXX = Specific Device Code Pb−Free indicator, “G” or microdot “ ”, may M = Date Code or may not be present. Some products may = Pb−Free Package not follow the Generic Marking. 

MANUAL, SOLDERRMID. MOUNTING TECHNIQUES REFERENCE ”, may Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

## **DOCUMENT NUMBER:** 

## **98AON13784G SOT−23** 

**PAGE 1 OF 1** 

**DESCRIPTION:** 

**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2016 

**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **ADDITIONAL INFORMATION** 

**TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales 

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 



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