# Small Signal Diode, Single, 250 V, 200 mA, 1.25 V, 50 ns, 625 mA

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![Product image](https://novapart.co/image/farnell:2317708/)

**URL**: https://novapart.co/products/BAS21SLT1G/small-signal-diode-single-250-v-200-ma-125-50-ns
**SKU**: BAS21SLT1G
**Manufacturer**: ONSEMI
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Small Signal Diodes
**Price**: €0.0180
**Stock**: 10+
**Lead Time**: 99 days (indicative)

## Description

The BAS21SLT1G from onsemi is a high-voltage, small-signal switching diode configured as a single device in a surface-mount SOT-23 package. Engineered for applications requiring high blocking voltages and rapid switching speeds, this component features a repetitive peak reverse voltage ($V_{RRM}$) of 250 V and an average forward current ($I_F$) of 200 mA, with a peak forward surge current capability ($I_{F(SM)}$) reaching 625 mA. The device exhibits a maximum forward voltage ($V_F$) of 1.25 V at 200 mA and delivers a fast reverse recovery time ($t_{rr}$) of 50 ns, making it well-suited for high-frequency signal processing and efficient reverse-current blocking. 

Built to withstand demanding operational environments, the BAS21SLT1G is AEC-Q101 qualified, ensuring compliance with strict automotive reliability standards. It supports an operating and storage junction temperature range ($T_J, T_{stg}$) from -55°C to +150°C. With a low diode capacitance ($C_D$) of 5 pF at zero bias and minimal reverse leakage current ($I_R$) of 100 nA at 200 V ($T_J = 150^\circ\text{C}$), the component minimizes parasitic losses and thermal runaway risks in dense circuit layouts. The 3-pin SOT-23 package accommodates standard surface-mount assembly processes while maintaining reliable thermal performance across standard FR-5 or alumina PCB substrates.

This high-voltage small-signal diode is optimized for use in telecommunications infrastructure, industrial automation controls, and automotive electronic control units (ECUs). Typical application circuits include high-voltage general-purpose switching, freewheeling protection in inductive loads, snubber networks, and DC-DC power conversion stages where fast transient suppression and high reverse-voltage withstand capabilities are critical.

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | BAS21 |
| Qualification | AEC-Q101 |
| Diode Mounting | Surface Mount |
| Diode Case Style | SOT-23 |
| Diode Configuration | Single |
| Forward Voltage Max | 1.25V |
| Forward Surge Current | 625mA |
| Reverse Recovery Time | 50ns |
| Average Forward Current | 200mA |
| Operating Temperature Max | 150°C |
| Repetitive Peak Reverse Voltage | 250V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2317708/)

## BAS21SLT1G, NSVBAS21SLT1G 

## Dual Series High Voltage Switching Diode 

## **Features** 

**www.onsemi.com** 

- Moisture Sensitivity Level: 1 

- ESD Rating − Human Body Model: Class 1 ESD Rating − Machine Model: Class B 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

- NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||
|---|---|
|**Rating**<br>**Symbol**<br>**Value**|**Unit**|
|Continuous Reverse Voltage<br>VR<br>250|Vdc|
|Repetitive Peak Reverse Voltage<br>VRRM<br>250|Vdc|
|Peak Forward Current<br>IF<br>225|mAdc|
|Peak Forward Surge Current<br>IFM(surge)<br>625<br>mAdc<br>**THERMAL CHARACTERISTICS**<br>**Characteristic**<br>**Symbol**<br>**Max**<br>**Unit**<br>Total Device Dissipation FR−5 Board<br>(Note 1)<br>TA= 25°C<br>Derate above 25°C<br>PD<br>225<br>1.8<br>mW<br>mW/°C<br>Thermal Resistance,<br>Junction to Ambient<br>R JA<br>556<br>°C/W<br>Total Device Dissipation<br>Alumina Substrate, (Note 2)<br>TA= 25°C<br>Derate above 25°C<br>PD<br>300<br>2.4<br>mW<br>mW/°C<br>Thermal Resistance,<br>Junction to Ambient<br>R JA<br>417<br>°C/W<br>Junction and Storage<br>Temperature Range<br>TJ, Tstg<br>−55 to<br>+150<br>°C<br>Stresses exceeding those listed in the Maximum Ratings table may damage the<br>device. If any of these limits are exceeded, device functionality should not be<br>assumed, damage may occur and reliability may be affected.<br>~~a~~<br>~~TT~~<br>~~ee~~<br>~~LT~~<br>~~ee~~<br>~~ee~~||
|1. FR−5 = 1.0<br>0.75<br>0.062 in.||
|2. Alumina = 0.4<br>0.3<br>0.024 in. 99.5% alumina.||



ANODE CATHODE 1 o—>tr-+ ~~>~~ 2 3 CATHODE/ANODE 

3 1 > 2 **SOT−23 CASE 318 STYLE 11** 

**MARKING DIAGRAM** 

JT M a 1 JT = Device Code M = Date Code* = Pb−Free Package (Note: Microdot may be in either location) 

*Date Code orientation and/or overbar may vary depending upon manufacturing location. 

**ORDERING INFORMATION** 

**Device Package Shipping**[†] BAS21SLT1G SOT−23 3000 / Tape & Reel (Pb−Free) NSVBAS21SLT1G SOT−23 3000 / Tape & Reel (Pb−Free) ~~a~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2000 **October, 2016 − Rev. 7** 

**BAS21SLT1/D** 

**BAS21SLT1G, NSVBAS21SLT1G** 

**ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise n|oted)||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||
|Reverse Voltage Leakage Current<br>(VR= 200 Vdc)<br>(VR= 200 Vdc, TJ= 150°C)|IR|−<br>−|0.1<br>100|�Adc|
|Reverse Breakdown Voltage<br>(IBR= 100�Adc)|V(BR)|250|−|Vdc|
|Forward Voltage<br>(IF= 100 mAdc)<br>(IF= 200 mAdc)|VF|−<br>−|1000<br>1250|mV|
|Diode Capacitance<br>(VR= 0, f = 1.0 MHz)|CD|−|5.0|pF|
|Reverse Recovery Time<br>(IF= IR= 30 mAdc, RL= 100�)|trr|−|50|ns|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

**==> picture [492 x 419] intentionally omitted <==**

**----- Start of picture text -----**<br>
820 �<br>IF<br>+10 V 2.0 k 0.1 �F tr t p t<br>100 �H IF 10% t rr t<br>0.1 �F<br>D.U.T. 90%<br>50 � OUTPUT 50 � INPUT iR(REC) = 3.0 mA<br>IR<br>PULSE SAMPLING VR OUTPUT PULSE<br>GENERATOR OSCILLOSCOPE INPUT SIGNAL<br>(IF = IR = 30 mA; MEASURED<br>at iR(REC) = 3.0 mA)<br>Notes: 1. A 2.0 k �  variable resistor adjusted for a Forward Current (IF) of 30 mA.<br>Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.<br>Notes: 3. tp » trr<br>Figure 1. Recovery Time Equivalent Test Circuit<br>1200 7000<br>1000 TA = −55 ° C 25 ° C 60005000 TA = 155 ° C<br>4000<br>800 3000<br>155 ° C<br>600 6<br>5<br>400 4<br>3<br>200 2 TA = 25 ° C<br>1 TA = −55 ° C<br>1 0<br>1 10 100 1000 1 2 5 10 20 50 100 200 300<br>FORWARD CURRENT (mA) REVERSE VOLTAGE (V)<br>FORWARD VOLTAGE (mV) REVERSE CURRENT (nA)<br>**----- End of picture text -----**<br>


**Figure 2. Forward Voltage** 

**Figure 3. Reverse Leakage** 

**www.onsemi.com** 

**2** 

**BAS21SLT1G, NSVBAS21SLT1G** 

## **PACKAGE DIMENSIONS** 

**SOT−23 (TO−236)** CASE 318−08 ISSUE AR 

**==> picture [462 x 183] intentionally omitted <==**

**----- Start of picture text -----**<br>
D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.<br>0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF<br>=<br>a 3 THE BASE MATERIAL.<br>E HE T 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.<br>1 2<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>L A 0.89 1.00 1.11 0.035 0.039 0.044<br>3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020<br>e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008<br>TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120<br>E 1.20 1.30 1.40 0.047 0.051 0.055<br>e 1.78 1.90 2.04 0.070 0.075 0.080<br>L 0.30 0.43 0.55 0.012 0.017 0.022<br>A L1 0.35 0.54 0.69 0.014 0.021 0.027<br>H E 2.10 2.40 2.64 0.083 0.094 0.104<br>T 0 ° −−− 10 ° 0 ° −−− 10 °<br>A1 SIDE VIEW SEE VIEW C c STYLE 11:<br>END VIEW PIN 1. ANODE<br>2. CATHODE<br>3. CATHODE−ANODE<br>**----- End of picture text -----**<br>


**==> picture [242 x 136] intentionally omitted <==**

**----- Start of picture text -----**<br>
RECOMMENDED<br>SOLDERING FOOTPRINT*<br>3X<br>2.90 _ 0.90<br>Lo | cr<br>3X 0.80 | Lh 0.95<br>PITCH<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**LITERATURE FULFILLMENT** : **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative 

## **LITERATURE FULFILLMENT** : 

◊ 

**BAS21SLT1/D** 

**http://onsemi.com 3** 



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