# RF / Pin Diode, Single, 1 ohm, 30 V, SOT-343, 4 Pin, 0.9 pF

![Product image](https://novapart.co/image/farnell:2480904/)

**URL**: https://novapart.co/products/BAR81WH6327XTSA1/rf-pin-diode-single-1-ohm-30-v-sot-343-4-09-pf
**SKU**: BAR81WH6327XTSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || RF / Pin Diodes
**Price**: €0.1980
**Stock**: 1000+
**Lead Time**: 190 days (indicative)

## Description

Diode Configuration:Single; Resistance @ If:1ohm; Breakdown Voltage Vbr:30V; Diode Case Style:SOT-343; No. of Pins:4 Pin; Total Capacitance Ct:0.9pF; Forward Current If(AV):100mA; O

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 4 Pin |
| Product Range | BAR81 |
| Diode Mounting | Surface Mount |
| Forward Current | 100mA |
| Forward Voltage | 1V |
| Resistance @ If | 1ohm |
| Reverse Voltage | 30V |
| Diode Case Style | SOT-343 |
| Diode Capacitance | 0.9pF |
| Power Dissipation | 100mW |
| Diode Configuration | Single |
| Operating Temperature Max | 125°C |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2480904/)

**BAR81...** 

## **Silicon RF Switching Diode** 

- Designed for use in shunt configuration in 

- high performance RF switches 

- High shunt signal isolation 

- Low shunt insertion loss 

- Optimized for short - open transformation 

using λ/4 lines 

- Pb-free (RoHS compliant) package 

## **BAR81W** 

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|**Type**|**Package**|**Configuration**|**Configuration**|**_L_**~~**S**~~(nH)<br>**Marking**|**_L_**~~**S**~~(nH)<br>**Marking**|
|---|---|---|---|---|---|
|BAR81W|SOT343|single shunt-diode<br>0.15*<br>BBs||||
|* series inductance chip to ground||||||
|**Maximum Ratings**at_T_A= 25°C|= 25°C,unless otherwise specified|||||
|**Parameter**<br>Diode reverse voltage|||**Symbol**<br>_V_R<br>~~e~~e <br>~~e~~e|**Value**<br>30<br> eee<br>ee|**Unit**<br>V|
|Forward current|||_I_F|100|mA|
|Total power dissipation<br>_T_s ≤138°C<br>Junction temperature<br>Operatingtemperature range<br>Storage temperature|||_P_tot<br>100<br>_T_j<br>150<br>_T_op<br>-55 ... 125<br>_T_stg<br>-55 ... 150<br>~~f~~o<br>~~e~~e<br>ee<br>~~ee eee~~<br>~~ee~~<br>~~ee~~||mW<br>°C|
|**Thermal Resistance**||||||
|**Parameter**|||**Symbol**|**Value**|**Unit**|
|Junction - soldering point1)|||_R_thJS|≤120|K/W|



> 1For calculation of _R_ thJA please refer to Application Note Thermal Resistance 

2011-06-14 

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|**BAR81...**<br>**Electrical Characteristics**at_T_A= 25°C,unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**DC Characteristics**<br>Cinfineon~~ee~~<br>~~ee ee~~|**BAR81...**<br>**Electrical Characteristics**at_T_A= 25°C,unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**DC Characteristics**<br>Cinfineon~~ee~~<br>~~ee ee~~|**BAR81...**<br>**Electrical Characteristics**at_T_A= 25°C,unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**DC Characteristics**<br>Cinfineon~~ee~~<br>~~ee ee~~|**BAR81...**<br>**Electrical Characteristics**at_T_A= 25°C,unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**DC Characteristics**<br>Cinfineon~~ee~~<br>~~ee ee~~|**BAR81...**<br>**Electrical Characteristics**at_T_A= 25°C,unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**DC Characteristics**<br>Cinfineon~~ee~~<br>~~ee ee~~|**BAR81...**<br>**Electrical Characteristics**at_T_A= 25°C,unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**DC Characteristics**<br>Cinfineon~~ee~~<br>~~ee ee~~|**BAR81...**<br>**Electrical Characteristics**at_T_A= 25°C,unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**DC Characteristics**<br>Cinfineon~~ee~~<br>~~ee ee~~|
|---|---|---|---|---|---|---|
|Reverse current|_I_R<br>-||-|20||nA|
|_V_R= 20 V|||||||
|Forward voltage|_V_F<br>-||0.93|1||V|
|_I_F= 100 mA|||||||
|**AC Characteristics**|||||||
|Diode capacitance|_C_T|||||pF|
|_V_R= 1 V,_f_= 1 MHz|-||0.6|1|||
|_V_R= 3 V,_f_= 1 MHz|-||0.57|0.9|||
|Forward resistance|_r_f<br>-||0.7|1||Ω|
|_I_F= 5 mA,_f_= 100 MHz|||||||
|Charge carrier life time|τ rr<br>-||80|-||ns|
|_I_F= 10 mA,_I_R= 6 mA, measured at_I_R= 3 mA,|||||||
|_R_L= 100Ω|||||||
|I-region width<br>Shunt Insertion loss1)<br>_I_F= 10 mA,_f_= 1.89 GHz<br>Shunt isolation1)<br>_V_R= 3 V,_f_= 1.89 GHz|_W_I<br>-<br>3.5<br>-<br>_I_L<br>-<br>30<br>-<br>_I_SO<br>-<br>0.7<br>-<br>ee<br>ee eee ee<br>Pf tf<br>Pf tf|||||µm<br>dB|



## **Configuration of the shunt-diode** 

- A perfect ground is essential for optimum isolation 

- The anode pins should be used as passage for RF 

1For more information please refer to Application Note 049. 

2011-06-14 

2 

**BAR81...** 

## **Diode capacitance** _C_ T = ƒ (VR) 

## _f_ = Parameter 

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**----- Start of picture text -----**<br>
1<br>pF<br>0.8<br>0.7<br>0.6<br>1 Mhz ... 1.8 GHz<br>0.5<br>0.4<br>0.3<br>0.2<br>0 2 4 6 8 10 12 14 16 V 20<br>V R<br>T<br>C<br>**----- End of picture text -----**<br>


## **Forward resistance** _r_ f = ƒ ( _I_ F) 

## _f_ = 100MHz 

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**----- Start of picture text -----**<br>
10 1<br>Ohm<br>10 0<br>10 -1<br>10  [-2 ] 10  [-1 ] 10  [0 ] 10  [1 ] mA 10  [2 ]<br>I F<br>r f<br>**----- End of picture text -----**<br>


## **Reverse parallel resistance** _R_ P = ƒ( _V_ R) _f_ = Parameter 

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10 4<br>KOhm<br>100 MHz<br>10 3<br>10 2  1 GHz<br>1.8 GHz<br>10 1<br>10 0<br>10 -1<br>0 2 4 6 8 10 12 14 16 V 20<br>V R<br>p<br>R<br>**----- End of picture text -----**<br>


## **Forward current** _I_ F = ƒ ( _V_ F) _T_ A = Parameter 

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**----- Start of picture text -----**<br>
10 0<br>A<br>10 -1<br>10 -2<br>10 -3<br>-40 °C<br>25 °C<br>10 -4  85 °C<br>125 °C<br>10 -5<br>10 -6<br>0 0.2 0.4 0.6 0.8 V 1.2<br>VF<br>I F<br>**----- End of picture text -----**<br>


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**BAR81...** 

## **Forward current** _I_ F = ƒ ( _T_ S) BAR81W 

**Permissible Puls Load** _R_ thJS = ƒ ( _t_ p) BAR81W 

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**----- Start of picture text -----**<br>
120 10 3<br>mA<br>K/W<br>100<br>90<br>80 10 2<br>70<br>60<br>50 0.5<br>40 10 1  0.2<br>0.1<br>0.05<br>30<br>0.02<br>20 0.01<br>0.005<br>10 D = 0<br>0 10 0<br>0 15 30 45 60 75 90 105 120 °C 150 10  [-6 ] 10  [-5 ] 10  [-4 ] 10  [-3 ] 10  [-2 ] s 10  [0 ]<br>T S t P<br>thJS<br>I F R<br>**----- End of picture text -----**<br>


## **Permissible Pulse Load** 

## _I_ Fmax/ _I_ FDC = ƒ ( _t_ p)        BAR81W 

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**----- Start of picture text -----**<br>
10 2<br>-<br>D = 0<br>0.005<br>0.01<br>0.02<br>10 1  0.05<br>0.1<br>0.2<br>0.5<br>10 0<br>10  [-6 ] 10  [-5 ] 10  [-4 ] 10  [-3 ] 10  [-2 ] s 10  [0 ]<br>t P<br>/ II FDCFmax<br>**----- End of picture text -----**<br>


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**Package SOT343** 

**BAR81...** 

## Package Outline 

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**----- Start of picture text -----**<br>
0.9 ±0.1<br>2 [±0.2]<br>0.1 MAX.<br>1.3<br>0.1<br>A<br>4 3<br>0.15<br>1 2<br>0.3 [+0.1] -0.05 0.15 [+0.1] -0.05<br>4x 0.6 +0.1-0.05<br>0.1 M 0.2 M A<br>±0.1  ±0.1<br>2.1 0.1 MIN. 1.25<br>**----- End of picture text -----**<br>


Foot Print 

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**----- Start of picture text -----**<br>
0.6<br>1.15<br>0.9<br>Manufacturer<br>2005, June<br>Date code (YM)<br>BGA420<br>Pin 1 Type code<br>4 0.2<br>Pin 1 2.15 1.1<br>0.8<br>1.6<br>8<br>2.3<br>**----- End of picture text -----**<br>


## Marking Layout (Example) 

## Standard Packing 

Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 

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**BAR81...** 

## **Edition 2009-11-16** 

**Published by Infineon Technologies AG 81726 Munich, Germany** 

##  **2009 Infineon Technologies AG All Rights Reserved.** 

## **Legal Disclaimer** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 

## **Information** 

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). 

## **Warnings** 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. 

Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

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- [Supplier page](https://es.farnell.com/infineon/bar81wh6327xtsa1/pin-diode-single-30v-0-1a-sot/dp/2480904)
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