# RF / Pin Diode, Single Pair Common Anode, 2.2 ohm, 150 V, SOT-323, 3 Pin, 0.65 pF

![Product image](https://novapart.co/image/farnell:4229016RL/)

**URL**: https://novapart.co/products/BAR6406WH6327XTSA1/rf-pin-diode-single-pair-common-anode-22-ohm-150-v
**SKU**: BAR6406WH6327XTSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || RF / Pin Diodes
**Price**: €0.0650
**Stock**: 1000+
**Lead Time**: 113 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3 Pin |
| Product Range | - |
| Diode Mounting | Surface Mount |
| Forward Current | 100mA |
| Forward Voltage | 820mV |
| Resistance @ If | 2.2ohm |
| Reverse Voltage | 150V |
| Diode Case Style | SOT-323 |
| Diode Capacitance | 0.65pF |
| Power Dissipation | 250mW |
| Diode Configuration | Single Pair Common Anode |
| Operating Temperature Max | 125°C |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4229016RL/)

## **BAR64-06W** 

## **Low signal distortion, surface mount RF PIN diode, common anode pair** 

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## **Product description** 

This Infineon cost optimized RF PIN diode is designed for low distortion switches that require to hold off large RF voltages, and is best suited for frequencies as high as 3 GHz. Its nominal 50 μm I-region width, combined with the typical 1.55 μs carrier lifetime, result in a diode with low forward resistance and low distortion characteristics. 

## **Feature list** 

- Low signal distortion, charge carrier lifetime _t_ rr = 1.55 µs (typical) 

- Very low capacitance _C_ = 0.25 pF (typical) at voltage _V_ R = 0 and frequencies _f_ ≥ 1 GHz 

- Low forward resistance _R_ F = 2.2 Ω (typical) at forward current _I_ F = 10 mA and frequency _f_ = 100 MHz 

- Industry standard SOT323-3 package (2.1 mm x 2 mm x 0.9 mm) 

- Pb-free, RoHS compliant and halogen-free 

## **Product validation** 

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. 

## **Potential applications** 

Optimized for low bias current RF and high-speed interface switches and attenuators 

- Wireless communication 

- High speed data networks 

## **Device information** 

**Table 1 Part information** 

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**----- Start of picture text -----**<br>
||||||
|---|---|---|---|---|
|Product name / Ordering code|Package|Pin configuration|Marking|Pieces / Reel|
|BAR64-06W / BAR6406WH6327XTSA1|SOT323-3|Common anode pair|PSs|3 k|

**----- End of picture text -----**<br>


## _**Attention** :_ _**ESD (Electrostatic discharge) sensitive device, observe handling precautions!**_ 

Please read the Important Notice and Warnings at the end of this document 

Datasheet 

v1.0 

**www.infineon.com** 

2018-06-30 

**BAR64-06W Low signal distortion, surface mount RF PIN diode, common anode pair** 

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## **Table of contents** 

## **Table of contents** 

||**Product description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
|---|---|
||**Feature list**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
||**Device information**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2|
|**1**|**Absolute maximum ratings**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2|
|**2**|**Electrical performance in test fixture**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3|
|2.1|DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3|
|2.2|AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4|
|**3**|**Thermal characteristics**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9|
|**4**|**Package information SOT323-3**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11|
||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12|
||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13|



## **1 Absolute maximum ratings** 

**Table 2 Absolute maximum ratings at** _**T**_ **A = 25 °C, unless otherwise specified** 

|**Parameter**|**Symbol**|**Values**|**Values**|**Unit**|**Note or test condition**|
|---|---|---|---|---|---|
|||**Min.**|**Max.**|||
|Diode reverse voltage|_V_R|–|150|V||
|Forward current|_I_F|–|100|mA||
|Total power dissipation|_P_TOT|–|250|mW|_T_S≤ 126 °C**_1)_**|
|Junction temperature|_T_J|–|150|°C||
|Operating temperature|_T_OP|-55|125|||
|Storage temperature|_T_STG|-55|150|||



_**Attention** :_ _**Stresses above the maximum values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the component.**_ 

> 1 _T_ S is the soldering point temperature. 

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## **Electrical performance in test fixture** 

## **2 Electrical performance in test fixture** 

## **2.1 DC characteristics** 

At _T_ A = 25 °C, unless otherwise specified 

## **DC characteristics** 

||||||||
|---|---|---|---|---|---|---|
|**Table 3**<br>**DC characteristics**|||||||
|**Parameter**|**Symbol**|**Values**|||**Unit**|**Note or test condition**|
|||**Min.**|**Typ.**|**Max.**|||
|Breakdown voltage|_V_BR|150|–|–|V|_I_R= 5 µA|
|Reverse current|_I_R|–|–|20|nA|_V_R= 20 V|
|Forward voltage|_V_F|–|0.82|–|V|_I_F= 10 mA|
|||–|0.9|–||_I_F= 50 mA|
|||–|0.95|1.1||_I_F= 100 mA|
|I-region width|_W_I|–|50|–|μm||



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**----- Start of picture text -----**<br>
10 [2]<br>10 [1]<br>10 [0]<br>10 [-1]<br>10 [-2]<br>10 [-3]<br>0.2 0.4 0.6 0.8 1 1.2<br>V  [V]<br>F<br> [mA]<br>F<br>I<br>**----- End of picture text -----**<br>


**Figure 1 Forward current** _**I**_ **F vs. forward voltage** _**V**_ **F** 

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## **Electrical performance in test fixture** 

## **2.2 AC characteristics** 

At _T_ A = 25 °C, unless otherwise specified 

|At_T_A= 25 °C, unless otherwise specified|At_T_A= 25 °C, unless otherwise specified||||||
|---|---|---|---|---|---|---|
|**Table 4**<br>**Key parameter**|||||||
|**Parameter**|**Symbol**|**Values**|||**Unit**|**Note or test condition**|
|||**Min.**|**Typ.**|**Max.**|||
|Capacitance|_C_|–|0.65|–|pF|_V_R= 0 V,_f_= 1 MHz|
|||–|0.26|0.35||_V_R= 20 V,_f_= 1 MHz|
|Forward resistance|_R_F|–|10.2|20||_I_F= 1 mA,_f_= 100 MHz|
|||–|4.4|–||_I_F= 3 mA,_f_= 100 MHz|
|||–|3.3|–||_I_F= 5 mA,_f_= 100 MHz|
|||–|2.2|2.8||_I_F= 10 mA,_f_= 100 MHz|
|||–|–|1.35||_I_F= 100 mA,_f_= 100 MHz|
|Inductance|_L_s|–|1.4|–|nH||
|Charge carrier lifetime|τrr|–|1550|–|ns|_I_F= 10 mA,_I_R= 6 mA,<br>measured at_I_R= 3 mA,<br>_R_L= 100 Ω|



|**Table 5**<br>**AC parameter at****_f_ = 1 GHz**|**Table 5**<br>**AC parameter at****_f_ = 1 GHz**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|**Note or test condition**|
|||**Min.**|**Typ.**|**Max.**|||
|Capacitance|_C_|–|0.25|–|pF|_V_R= 0 V|
|Reverse parallel resistance|_R_P|–|3.2|–|kΩ|_V_R= 0 V|
|Forward resistance|_R_F|–|9.8|–|Ω|_I_F= 1 mA|
|||–|4.4|–||_I_F= 3 mA|
|||–|3.4|–||_I_F= 5 mA|
|||–|2.4|–||_I_F= 10 mA|
|Insertion loss|_I_L|–|0.82|–|dB|_I_F= 1 mA|
|||–|0.4|–||_I_F= 3 mA|
|||–|0.31|–||_I_F= 5 mA|
|||–|0.23|–||_I_F= 10 mA|
|Isolation|_I_SO|–|17.8|–||_V_R= 0 V|



|**Table 6**<br>**AC parameter at****_f_= 1.8 GHz**|**Table 6**<br>**AC parameter at****_f_= 1.8 GHz**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|**Note or test condition**|
|||**Min.**|**Typ.**|**Max.**|||
|Capacitance|_C_|–|0.25|–|pF|_V_R= 0 V|
|Reverse parallel resistance|_R_P|–|2.6|–|kΩ|_V_R= 0 V|



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## **Electrical performance in test fixture** 

|**Table 6**<br>**AC parameter at****_f_= 1.8 GHz (continued)**|**Table 6**<br>**AC parameter at****_f_= 1.8 GHz (continued)**|**Table 6**<br>**AC parameter at****_f_= 1.8 GHz (continued)**|**Table 6**<br>**AC parameter at****_f_= 1.8 GHz (continued)**|**Table 6**<br>**AC parameter at****_f_= 1.8 GHz (continued)**|**Table 6**<br>**AC parameter at****_f_= 1.8 GHz (continued)**||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|**Note or test condition**|
|||**Min.**|**Typ.**|**Max.**|||
|Forward resistance|_R_F|–|9.9|–|Ω|_I_F= 1 mA|
|||–|4.5|–||_I_F= 3 mA|
|||–|3.5|–||_I_F= 5 mA|
|||–|2.4|–||_I_F= 10 mA|
|Insertion loss|_I_L|–|0.85|–|dB|_I_F= 1 mA|
|||–|0.44|–||_I_F= 3 mA|
|||–|0.35|–||_I_F= 5 mA|
|||–|0.27|–||_I_F= 10 mA|
|Isolation|_I_SO|–|13.1|–||_V_R= 0 V|



**Table 7 AC parameter at** _**f**_ **= 2.5 GHz** 

|**Table 7**<br>**AC parameter at****_f_ = 2.5**|**GHz**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|**Note or test condition**|
|||**Min.**|**Typ.**|**Max.**|||
|Capacitance|_C_|–|0.25|–|pF|_V_R= 0 V|
|Reverse parallel resistance|_R_P|–|2.3|–|kΩ|_V_R= 0 V|
|Forward resistance|_R_F|–|10.1|–|Ω|_I_F= 1 mA|
|||–|4.7|–||_I_F= 3 mA|
|||–|3.6|–||_I_F= 5 mA|
|||–|2.6|–||_I_F= 10 mA|
|Insertion loss|_I_L|–|0.9|–|dB|_I_F= 1 mA|
|||–|0.49|–||_I_F= 3 mA|
|||–|0.4|–||_I_F= 5 mA|
|||–|0.33|–||_I_F= 10 mA|
|Isolation|_I_SO|–|10.5|–||_V_R= 0 V|



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## **Electrical performance in test fixture** 

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**----- Start of picture text -----**<br>
0.6<br>0.5<br>0.4<br>1 MHz<br>1...3 GHz<br>0.3<br>0.2<br>0.1<br>0 5 10 15 20 25 30 35 40<br>V  [V]<br>R<br>C [pF]<br>**----- End of picture text -----**<br>


**Figure 2 Capacitance** _**C**_ **vs. reverse voltage** _**V**_ **R at different frequencies** 

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**Figure 3 Reverse parallel resistance** _**R**_ **P vs. reverse voltage** _**V**_ **R at different frequencies** 

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## **Electrical performance in test fixture** 

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**Figure 4 Forward resistance** _**R**_ **F vs. forward voltage** _**V**_ **F at different frequencies** 

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**----- Start of picture text -----**<br>
0<br>-0.2<br>-0.4<br>100 mA<br>-0.6 10 mA<br>5 mA<br>3 mA<br>1 mA<br>-0.8<br>-1<br>0 1 2 3 4 5 6<br>f [GHz]<br>[dB]<br>L<br>I<br>**----- End of picture text -----**<br>


**Figure 5 Insertion loss** _**I**_ **L vs. frequency** _**f**_ **at different forward currents** 

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## **Electrical performance in test fixture** 

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**----- Start of picture text -----**<br>
0<br>-5<br>-10<br>-15<br>-20<br>-25 0 V<br>1 V<br>10 V<br>-30<br>-35<br>0 1 2 3 4 5 6<br>f [GHz]<br> [dB]<br>SO<br>I<br>**----- End of picture text -----**<br>


**Figure 6** 

**Isolation** _**I**_ **SO vs. frequency** _**f**_ **at different reverse voltages** 

_Note: The curves shown in this chapter have been generated using typical devices but shall not be understood as a guarantee that all devices have identical characteristic curves._ 

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## **Thermal characteristics** 

## **3 Thermal characteristics** 

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**----- Start of picture text -----**<br>
Table 8 Thermal resistance<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Parameter Sym Values Unit Note or test condition<br>bol<br>Min. Typ. Max.<br>Thermal resistance R thJS – 105 – K/W T S = 123 °C  [2)]<br>(junction - soldering point)<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 20 40 60 80 100 120 140 160<br>T  [°C]<br>S<br> [mA]<br>F<br>I<br>**----- End of picture text -----**<br>


**Figure 7 Permissible forward current** _**I**_ **F in DC operation** 

2 

For _R_ thJS in other conditions refer to the curves in this chapter. 

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## **Thermal characteristics** 

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**Figure 8** 

**Thermal resistance** _**R**_ **thJS in pulse operation** 

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**Figure 9** 

**Permissible forward current ratio** _**I**_ **Fmax/** _**I**_ **DC in pulse operation** 

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**4** 

## **Package information SOT323-3** 

## **Package information SOT323-3** 

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**----- Start of picture text -----**<br>
1.25 ±0.1 - A _<br>S o<br>0.1 MIN. TL 4a 0.1<br>Elon 0.2 A 2.1±0.1<br>T t p<br>taf | |<br>MOLD FLASH, PROTRUSION OR GATE BURRS OF 0.2 MM MAXIMUM PER SIDE ARE NOT INCLUDED<br>ALL DIMENSIONS ARE IN UNITS MM<br>THE DRAWING IS IN COMPLIANCE WITH ISO 128 & PROJECTION METHOD 1 [ ae ]<br>±0.1<br>0.9<br>+0.10 -0.05<br>0.15<br>MAX.<br>0.1<br>3x<br>1 0.1<br>0.65<br>2±0.2 0.65 3<br>2 +0.100.3-0.05<br>**----- End of picture text -----**<br>


## **Figure 10 Package outline** 

## **Figure 11 Foot print** 

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**----- Start of picture text -----**<br>
TYPE CODE<br>— 1<br>NOTE OF MANUFACTURER<br>MONTH<br>YEAR<br>**----- End of picture text -----**<br>


## **Figure 12 Marking layout example** 

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**----- Start of picture text -----**<br>
4<br>2 0.2<br>OF<br>( [O] Oo [/] — _ [O] +<br>INDEX MARKINGPIN 1 2.15 1.1<br>ALL DIMENSIONS ARE IN UNITS MM<br>THE DRAWING IS IN COMPLIANCE WITH ISO 128 & PROJECTION METHOD 1 [ ae ]<br>8<br>1.9 2.3<br>**----- End of picture text -----**<br>


**Figure 13 Tape information** 

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## **Revision history** 

## **Revision history** 

|**Document**<br>**version**|**Date of**<br>**release**|**Description of changes**|
|---|---|---|
|1.0|2018-09-07|•<br>Change from series datasheet to individual one<br>•<br>Initial release of datasheet<br>•<br>Typical values and curves updated to the values of the production<br>(No product or process change behind)<br>•<br>Maximum/typical values added<br>•<br>Typical curves/values removed|
|1.1|2019-01-21|Product description, feature list and potential application section reworked|



Datasheet 

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## **Trademarks** 

All referenced product or service names and trademarks are the property of their respective owners. 

**Edition 2018-06-30 IMPORTANT NOTICE Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”) . **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding the **© 2019 Infineon Technologies AG** application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of **All Rights Reserved.** any kind, including without limitation warranties of non-infringement of intellectual property rights of any **Do you have a question about any** third party. **aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-pwy1535527432136** Infineon Technologies in customer’s applications. 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 



## Links

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---

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