# Schottky Rectifier, 70 V, 30 mA, Single, SOT-23, 3 Pins, 410 mV

![Product image](https://novapart.co/image/farnell:9801340RL/)

**URL**: https://novapart.co/products/BAR18FILM/schottky-rectifier-70-v-30-ma-single-sot-23-3-pins
**SKU**: BAR18FILM
**Manufacturer**: STMICROELECTRONICS
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Schottky Rectifier Diodes
**Price**: €0.0460
**Stock**: 10+
**Lead Time**: 127 days (indicative)

## Description

Repetitive Reverse Voltage Vrrm Max:70V; Forward Current If(AV):30mA; Diode Configuration:Single; Diode Case Style:SOT-23; No. of Pins:3Pins; Forward Voltage VF Max:410mV; Forward Surge Current I

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | BAR18 Series |
| Qualification | - |
| Diode Mounting | Surface Mount |
| Diode Case Style | SOT-23 |
| Diode Configuration | Single |
| Forward Voltage Max | 410mV |
| Forward Surge Current | - |
| Average Forward Current | 30mA |
| Operating Temperature Max | 150°C |
| Repetitive Peak Reverse Voltage | 70V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9801340RL/)

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## **BAR 18 BAS70-04 06** 

## SMALL SIGNAL SCHOTTKY DIODES 

## **DESCRIPTION** 

Low turn-on and high breakdown voltage diodes intended for ultrafast switching and UHF detectors in hybrid micro circuits. 

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A1<br>K<br>K2<br>K1<br>N.C.<br>A A2<br>BAR18 BAS70-04<br>K A<br>A1 K1<br>A2 K2<br>BAS70-05 BAS70-06<br>SOT-23<br>(Plastic)<br>**----- End of picture text -----**<br>


## **ABSOLUTE RATINGS** (limiting values) 

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Symbol Parameter Value Unit<br>VRRM Repetitive peak reverse voltage 70 V<br>IF Continuous forward current 70 mA<br>Ptot Power dissipation (note 1) Tamb = 25°C 250 mW<br>Tstg Maximum storage temperature range - 65 to +150 °C<br>Tj Maximum operating junction temperature * 150 °C<br>TL Maximum temperature for soldering during 10s 260 °C<br>**----- End of picture text -----**<br>


**Note 1:** for double diodes, Ptot is the total dissipation of both diodes 

dPtot 1 *  : < thermal  runaway condition for a diode on its own heatsink dTj Rth(j − a) 

## **THERMAL RESISTANCE** 

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Symbol Parameter Value Unit<br>Rth (j-a) Junction to ambient (*) 500 °C/W<br>**----- End of picture text -----**<br>


(*) Mounted on epoxy board with recommended pad layout. 

December 2001 - Ed: 3A 

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## **BAR 18 / BAS70-04 06** 

## **ELECTRICAL CHARACTERISTICS** 

## **STATIC CHARACTERISTICS** 

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Symbol Test Conditions Min. Typ. Max. Unit<br>VBR Tj = 25°C       IR = 10µA 70 V<br>VF * Tj = 25°C       IF = 1mA 410 mV<br>IR ** Tj = 25°C       VR = 50V 200 nA<br>**----- End of picture text -----**<br>


Pulse test: * tp = 380µs, δ < 2% ** tp = 5 ms, δ < 2% 

## **DYNAMIC CHARACTERISTICS** 

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Symbol Test Conditions Min. Typ. Max. Unit<br>C Tj = 25°C   VR = 0V      F = 1MHz 2 pF<br>τ* Tj = 25°C    IF = 5mA    Krakauer Method 100 ps<br>**----- End of picture text -----**<br>


* Effective carrier life time. 

**Fig. 1-1:** Forward voltage drop versus forward current (low level). 

**Fig. 1-2:** Forward voltage drop versus forward current (high level). 

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IFM(A)<br>2.0E-2<br>1.8E-2<br>1.6E-2 Tj=100°C<br>Typical values<br>1.4E-2<br>1.2E-2 Tj=25°C<br>Maximum values<br>1.0E-2<br>8.0E-3 Tj=25°C<br>6.0E-3 Typical values<br>4.0E-3<br>2.0E-3 VFM(V)<br>0.0E+0<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>**----- End of picture text -----**<br>


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IFM(A)<br>7E-2<br>Tj=100°C<br>Typical values<br>1E-2<br>Tj=25°C<br>Maximum values<br>1E-3 Tj=25°C<br>Typical values<br>VFM(V)<br>1E-4<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0<br>**----- End of picture text -----**<br>


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**BAR 18 / BAS70-04 06** 

**Fig. 2:** Reverse leakage current versus reverse voltage applied  (typical values). 

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IR(µA)<br>1E+1<br>Tj=100°C<br>1E+0<br>1E-1<br>Tj=25°C<br>1E-2<br>VR(V)<br>1E-3<br>0 5 10 15 20 25 30 35 40 45 50 55 60 65 70<br>**----- End of picture text -----**<br>


**Fig. 4:** Junction capacitance versus reverse voltage applied (typical values). 

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C(pF)<br>2.0<br>F=1MHz<br>Tj=25°C<br>1.0<br>VR(V)<br>0.1<br>1 10 100<br>**----- End of picture text -----**<br>


**Fig. 3:** Reverse leakage current versus junction temperature (typical values) 

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IR(µA)<br>5E+2<br>VR=70V<br>1E+2<br>1E+1<br>1E+0<br>1E-1<br>Tj(°C)<br>1E-2<br>0 25 50 75 100 125 150<br>**----- End of picture text -----**<br>


**Fig. 5:** Relative variation of thermal impedance junction to ambient versus pulse duration (alumine substrate 10mm*8mm*0.5mm). 

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Zth(j-a)/Rth(j-a)<br>1.00<br>δ = 0.5<br>δ = 0.2<br>0.10 δ = 0.1<br>T<br>Single pulse tp(s) δ [=tp/T] tp<br>0.01<br>1E-3 1E-2 1E-1 1E+0 1E+1 1E+2<br>**----- End of picture text -----**<br>


**Fig. 6:** Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35µm). 

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Rth(j-a) (°C/W)<br>350<br>P=0.25W<br>300<br>250<br>200<br>S(Cu) (mm²)<br>150<br>0 5 10 15 20 25 30 35 40 45 50<br>**----- End of picture text -----**<br>


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**BAR 18 / BAS70-04 06** 

## **PACKAGE MECHANICAL DATA** 

SOT23 (Plastic) 

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E A DIMENSIONS<br>REF. Millimeters Inches<br>e Min. Max. Min. Max.<br>B e1 D<br>A 0.89 1.4 0.035 0.055<br>A1 0 0.1 0 0.004<br>S B 0.3 0.51 0.012 0.02<br>A1 c 0.085 0.18 0.003 0.007<br>D 2.75 3.04 0.108 0.12<br>L e 0.85 1.05 0.033 0.041<br>e1 1.7 2.1 0.067 0.083<br>H E 1.2 1.6 0.047 0.063<br>H 2.1 2.75 0.083 0.108<br>L 0.6 typ. 0.024 typ.<br>c S 0.35 0.65 0.014 0.026<br>**----- End of picture text -----**<br>


## **FOOTPRINT DIMENSIONS** 

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0.9 0.9<br>0.035 0.035<br>1.9<br>0.075<br>1.45 mm<br>0.037 inch<br>0.9<br>0.035<br>1.1 0.043<br>2.35 0.92<br>1.1 0.043<br>**----- End of picture text -----**<br>


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Ordering type Marking Package Weight Base qty Delivery mode<br>BAR18 D76 SOT-23 0.01g 3000 Tape & reel<br>BAS70-04 D96 SOT-23 0.01g 3000 Tape & reel<br>BAS70-05 D97 SOT-23 0.01g 3000 Tape & reel<br>BAS70-06 D98 SOT-23 0.01g 3000 Tape & reel<br>**----- End of picture text -----**<br>


> I Epoxy meets UL94,V0 

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 

STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 

The ST logo is a registered trademark of STMicroelectronics 

© 2001 STMicroelectronics - Printed in Italy - All rights reserved. 

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