# Power MOSFET, N Channel, 55 V, 51 A, 0.011 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:2062106/)

**URL**: https://novapart.co/products/AUIRLZ44Z/power-mosfet-n-channel-55-v-51-a-0011-ohm-to-220ab
**SKU**: AUIRLZ44Z
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.6900
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Qualification | AEC-Q101 |
| Power Dissipation | 80W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 80W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.011ohm |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 51A |
| Drain Source On State Resistance | 0.011ohm |
| Automotive Qualification Standard | AEC-Q101 |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2062106/)

PD - 97682 

## **AUTOMOTIVE GRADE** 

## AUIRLZ44Z 

## **Features** 

## HEXFET[®] Power MOSFET 

- Advanced Process Technology 

- Ultra Low On-Resistance 

- 175°C Operating Temperature 

- Fast Switching 

- Repetitive Avalanche Allowed up to Tjmax 

- Lead-Free, RoHS Compliant 

|**V(BR)DSS**|**55V**|
|---|---|
|**RDS(on)   typ.**<br>**max.**|**11m**Ω|
||**13.5m**Ω|
|**I**~~**D**~~|**51A**|



- Automotive Qualified * 

## **Description** 

Specifically designed for Automotive applications, this HEXFET[®] Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.  Additional features of this design  are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. 

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D<br>S<br>D<br>G<br>TO-220AB<br>AUIRLZ44Z<br>**----- End of picture text -----**<br>


|**G**|**D**|**S**|
|---|---|---|
|Gate|Drain|Source|



## **Absolute Maximum Ratings** 

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.   These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|ID @ TC = 25°C|Continuous Drain Current, VGS@ 10V<br>~~a~~<br>~~ae~~|51<br>~~a~~<br>~~ae~~|A<br>~~ae~~|
|ID @ TC = 100°C|Continuous Drain Current, VGS@ 10V<br>~~oF~~<br>~~ae~~|36<br>~~oF~~<br>~~ae~~||
|IDM<br>~~+.~~|~~Pulsed Drain Current~~<br>~~ae~~<br>~~+.~~<br>~~+_!_*+-NN~~|204<br>~~ae~~||
|PD @TC = 25°C<br>~~+.~~|Power Dissipation<br>~~+.~~<br>~~+_!_*+-NN~~|80|W|
|~~+.~~<br>~~a~~|Linear Derating Factor<br>~~+.~~<br>~~+_!_*+- NN~~<br>~~[So~~<br>~~a~~|0.53<br>~~[So~~<br>~~a~~|W/°C<br>~~[So~~|
|VGS<br>~~a~~|Linear Derating Factor<br>Gate-to-Source Voltage<br>~~es~~<br>~~aa~~|± 16<br>~~es~~<br>~~a~~<br>~~ee ae~~|V<br>~~es~~<br>~~ae~~|
|EAS(Thermally Limited)<br>~~a~~|Single Pulse Avalanche Energy<br>~~es~~<br>~~aa~~|78<br>~~es~~<br>~~a~~<br>~~ee ae~~|mJ<br>~~es~~<br>~~ae~~|
|EAS(tested )<br>~~a~~|Single Pulse Avalanche EnergyTested Value<br>~~aa~~|110<br>~~a~~<br>~~ee ae~~<br>~~rs~~||
|IAR<br>|~~Avalanche Current~~<br>~~a~~<br>~~ee~~|See Fig.12a, 12b, 15, 16<br>~~ee ae~~<br>~~ee~~<br>~~rs~~<br>~~po~~|A<br>~~ae~~<br>~~ee~~|
|EAR<br>~~po~~|Repetitive Avalanche Energy<br>~~ee~~<br>~~po~~||mJ<br>~~ee~~<br>~~po~~|
|TJ<br>TSTG<br>~~po~~|Operating Junction and<br>Storage Temperature Range<br>~~po~~|-55  to + 175<br>~~rs~~<br>~~po~~|°C<br>~~po~~|
|~~po~~|Soldering Temperature, for 10 seconds (1.6mm from case )<br>~~po~~|300<br>~~po~~||
|~~po~~|Soldering Temperature, for 10 seconds (1.6mm from case )<br>Mounting Torque, 6-32 or M3 screw<br>~~po~~<br>~~a~~|10 lbf in (1.1N m)<br>~~po~~<br>~~a~~|~~po~~<br>~~a~~|



HEXFET[®] is a registered trademark of International Rectifier. 

- Qualification standards can be found at http://www.irf.com/ 

www.irf.com 

1 

**Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Static Electrical Characteristics @ TJJ = 25°C (unless otherwise specified)(unless otherwise specified)unless otherwise specified)pecified)ecified))**|**Static Electrical Characteristics @ TJJ = 25°C (unless otherwise specified)(unless otherwise specified)unless otherwise specified)pecified)ecified))**|**Static Electrical Characteristics @ TJJ = 25°C (unless otherwise specified)(unless otherwise specified)unless otherwise specified)pecified)ecified))**|
|---|---|---|
|**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>55<br>–––<br>–––<br>V<br>ΔV(BR)DSS/ΔTJ<br>Breakdown Voltage Temp. Coefficient<br>–––<br>0.05<br>–––<br>V/°C<br>RDS(on)<br>Static Drain-to-Source On-Resistance<br>–––<br>11<br>13.5<br>~~m~~Ω<br>–––<br>–––<br>20<br>~~m~~Ω<br>–––<br>–––<br>22.5<br>~~m~~Ω<br>VGS(th)<br>Gate Threshold Voltage<br>1.0<br>–––<br>3.0<br>V<br>gfs<br>Forward Transconductance<br>27<br>–––<br>–––<br>V<br>IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>20<br>μA<br>–––<br>–––<br>250<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>200<br>nA<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-200<br>**Dynamic Electrical Characteristics @ TJ = 25°C(unless otherwise specified)**<br>VGS= 5.0V, ID= 30A<br>VGS= 4.5V, ID= 15A<br>VDS= 25V, ID= 31A<br>VGS= 16V<br>VGS= -16V<br>**Conditions**<br>VGS= 0V, ID= 250μA<br>Reference to 25°C, ID= 1mA<br>VGS= 10V, ID= 31A<br>VDS= VGS, ID= 250μA<br>VDS= 55V, VGS= 0V<br>VDS= 55V, VGS= 0V, TJ= 125°C<br>~~GO~~<br>~~GO~~<br>~~GOD QO CO~~<br>~~Rs~~<br>~~GD~~<br>~~QO GO~~<br>~~es~~<br>~~GOD I OD~~<br>~~es~~<br>~~GOD I~~<br>~~ED(©~~<br>~~es~~<br>~~GOD~~<br>~~GOD~~<br>~~©~~<br>~~ee~~<br>~~Rs~~<br>~~RD~~<br>~~GO GO~~<br>~~Rs~~<br>~~DG~~<br>~~QO GO~~<br>~~ee~~<br>~~OE~~<br>~~|~~<br>~~|~~<br>~~C—O~~<br>~~i~~<br>~~a~~<br>~~ee~~<br>~~PT~~|||
|Qg|**Parameter**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Units**<br>Total Gate Charge<br>–––<br>24<br>36<br>ID= 31A<br>**Conditions**<br>~~GO~~<br>~~GO PQ~~<br>~~es~~||
|Qgs<br>Qgd<br>td(on)|Gate-to-Source Charge<br>–––<br>7.5<br>–––<br>nC<br>Gate-to-Drain("Miller")Charge<br>–––<br>12<br>–––<br>Turn-On DelayTime<br>–––<br>14<br>–––<br>VDS= 44V<br>VGS= 5.0V<br>VDD= 50V<br>~~es~~<br>~~es~~<br>~~@~~<br>~~Rs~~||
|tr|Rise Time<br>–––<br>160<br>–––<br>ID= 31A<br>~~Rs~~||
|td(off)<br>tf<br>LD<br>LS<br>Ciss<br>Coss<br>Crss|S<br>D<br>G<br>Turn-Off DelayTime<br>–––<br>25<br>–––<br>ns<br>Fall Time<br>–––<br>42<br>–––<br>Internal Drain Inductance<br>–––<br>4.5<br>–––<br>Between lead,<br>nH<br>6mm (0.25in.)<br>Internal Source Inductance<br>–––<br>7.5<br>–––<br>from package<br>and center of die contact<br>Input Capacitance<br>–––<br>1620<br>–––<br>Output Capacitance<br>–––<br>230<br>–––<br>Reverse Transfer Capacitance<br>–––<br>130<br>–––<br>pF<br>RG= 7.5Ω<br>VGS= 5.0V<br>VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz<br>~~Rs~~<br>~~es~~<br>~~®~~<br>~~+ |S~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~||
|Coss<br>Coss<br>Cosseff.|Output Capacitance<br>–––<br>860<br>–––<br>Output Capacitance<br>–––<br>180<br>–––<br>Effective Output Capacitance<br>–––<br>280<br>–––<br>VGS= 0V,  VDS= 1.0V,ƒ= 1.0MHz<br>VGS= 0V,  VDS= 44V,ƒ= 1.0MHz<br>VGS= 0V, VDS= 0V to 44V<br>~~es~~<br>~~Po~~<br>~~es~~<br>~~|rr—“COCCSC~~<br>~~es~~||
|**Diode Characteristics**|||
||**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units**<br>**Conditions**||
|IS<br>ISM<br>VSD<br>trr<br>Qrr<br>ton|Continuous Source Current<br>–––<br>–––<br>51<br>(Body Diode)<br>A<br>Pulsed Source Current<br>–––<br>–––<br>204<br>(Body Diode)<br>Diode Forward Voltage<br>–––<br>–––<br>1.3<br>V<br>Reverse RecoveryTime<br>–––<br>21<br>32<br>ns<br>Reverse RecoveryCharge<br>–––<br>16<br>24<br>nC<br>Forward Turn-On Time<br>Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>TJ= 25°C, IS= 31A, VGS= 0V<br>TJ= 25°C, IF= 31A, VDD= 28V<br>di/dt = 100A/μs<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>~~SSS~~<br>~~ee)~~<br>~~es~~<br>~~DD (OO~~<br>~~re eee~~<br>~~ee~~<br>~~es~~<br>~~®~~<br>~~|~~||



Notes: ~~)~~ a Repetitive rating;  pulse width limited by © Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive max. junction temperature. (See fig. 11). avalanche performance. @ Limited by TJmax, starting TJ = 25°C, L = 0.166mH © This value determined from sample failure population, RG = 25 Ω , IAS = 31A, VGS =10V. Part not starting TJ = 25°C, L = 0.166mH, RG = 25J = 25°C, L = 0.166mH, RG = 25= 25°C, L = 0.166mH, RG = 25G = 25= 25 Ω , IAS = 31A, VGSAS = 31A, VGS= 31A, VGSGS =10V. recommended for use above this value. 

This value determined from sample failure population, starting TJ = 25°C, L = 0.166mH, RG = 25J = 25°C, L = 0.166mH, RG = 25= 25°C, L = 0.166mH, RG = 25G = 25= 25 Ω , IAS = 31A, VGSAS = 31A, VGS= 31A, VGSGS =10V. R θ is measured at TJ approximately 90°C. 

® Pulse width ≤ 1.0ms; duty cycle ≤ 2%. ) Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . 

www.irf.com 

2 

## **Qualification Information[†]** 

|**Qualification Information[†]**|**Qualification Information[†]**|||
|---|---|---|---|
|**Qualification Level**||Automotive<br>(per AEC-Q101)††||
|||Comments:<br>This part<br>number(s)<br>passed Automotive<br>qualification.<br>IR’s Industrial and Consumer qualification<br>level is granted by extension of the higher Automotive<br>level.||
|**Moisture Sensitivity Level**||TO-220AB|N/A|
|**ESD**|Machine Model|Class M4(+/- 425V )<br>†††<br>(per AEC-Q101-002)||
||Human Body Model|Class H1C(+/- 2000V )<br>†††<br>(per AEC-Q101-001)||
||Charged Device Model|Class C5(+/- 1125V )<br>†††<br>(per AEC-Q101-005)||
|**RoHS Compliant**||Yes||



- Qualification standards can be found at International Rectifier’s web site:  http//www.irf.com/ 

†† Exceptions to AEC-Q101 requirements are noted in the qualification report. 

- †††    Highest passing voltage 

www.irf.com 

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1000<br>VGS<br>ee ee eee TOP           15V10V<br>a ee 8.0V<br>5.0V<br>100 4.5V<br>alll<br>4.0V<br>3.5V<br>BOTTOM 3.0V<br>t yg<br>10 tt |<br>OZ<br>Ft<br>1 3.0V<br>≤  60μs PULSE WIDTH<br>Tj = 25°C<br>aliiPET mail<br>0.1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000.0<br>PEt fF 4<br>ee es es T J  = 25 ee °C ee ee eee eee<br>100.0 | | ae T = 175°C<br>J<br>) | A CC<br>10.0<br>J2<br>AF<br>Bm re V DS  = 20V<br>≤  60μs PULSE WIDTH<br>1.0<br>fpey<br>2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>) (Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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1000<br>VGS<br>TOP           15V10V ee<br>8.0V a<br>5.0V<br>4.5V<br>email<br>100 4.0V<br>3.5V<br>BOTTOM 3.0V<br>eS<br>yg<br>ee<br>10 0<br>3.0V<br>≤  60μs PULSE WIDTH<br>Tj = 175°C<br>|elie ne |<br>1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 2.** Typical Output Characteristics 

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60<br>TJ = 175°C<br>aa<br>40<br>T = 25°C<br>J<br>20 L earn<br>VDS = 10V<br>380μs PULSE WIDTH<br>/<br>0<br>0 10 20 30 40 50<br>ID, Drain-to-Source Current (A)<br>Gfs, Forward Transconductance (S)<br>**----- End of picture text -----**<br>


**Fig 4.** Typical Forward Transconductance Vs. Drain Current 

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2500 12<br>VGS   = 0V,       f = 1 MHZ ID= 31A<br>CCiss   = C = Cgs + Cgd,  C ds SHORTED 10 V DS = 44V<br>2000 rss   gd  VDS= 28V<br>Coss  = Cds + Cgd VDS= 11V<br>Ciss 8<br>1500<br>FETT | CK<br>6<br>1000<br>4<br>CT TO) = AAG<br>500 SU | 2<br>Coss<br>Crss<br>Se 0<br>0<br>0 10 20 30 40 50<br>1 10 100<br> QG  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000.0 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100.0 100<br>TJ = 175°C<br>100μsec<br>10.0 10<br>T = 25°C<br>J  1msec<br>1<br>1.0<br>Tc = 25°C<br>10msec<br>Tj = 175°C<br>VGS = 0V Single Pulse<br>0.1<br>0.1<br>1 10 100 1000<br>0.2 0.6 1.0 1.4 1.8<br>VDS  , Drain-toSource Voltage (V)<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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60 2.5<br>ID = 30A<br>50 V GS  = 5.0V<br>TELE EL ELL 2.0 eT TELTTE ETD<br>TN Ht<br>40<br>ae saueennenend<br>30 TLLEPNEEEEE 1.5 EEE<br>TTT EEN EEE<br>20<br>1.0<br>10<br>TON |  beet<br>ELE ELLENNY CLEPEEE<br>0 0.5<br>25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C) TJ , Junction Temperature (°C)<br>Fig 9.   Maximum Drain Current Vs. Fig 10.   Normalized On-Resistance<br>Case Temperature Vs. Temperature<br>10<br>1 D = 0.50<br>0.20<br>0.10 R 1 R1 R 2 R2 R 3R3 Ri (°C/W)  τ i (sec)<br>0.1 0.05 τ J τ J τ C τ 0.736 0.000345<br>0.02 τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 0.687       0.00147<br>=e 0.01<br>Ci=  τ i / Ri 0.449       0.007058<br>Ci i / Ri<br>0.01<br>SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>0.001 FT fT TE SE ET EE PE EET 2. Peak Tj = P dm x Zthjc + Tc<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>ID  , Drain Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>y: 2V0VGS Jk<br>tp 0.01 Ω<br>a e<br>**----- End of picture text -----**<br>


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Fig 12a.   Unclamped Inductive Test Circuit<br>V(BR)DSS<br>_. tp<br>IAS |<br>Fig 12b.   Unclamped Inductive Waveforms<br>**----- End of picture text -----**<br>


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QG<br>al y QGS “* QGD ><br>VG<br>; 4<br>Charge<br>Fig 13a.   Basic Gate Charge Waveform =<br>L<br>VCC<br>DUT<br>0<br>1K<br>nad<br>**----- End of picture text -----**<br>


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320<br>                 I<br>D<br>TOP          3.7A<br>               5.7A<br>240160 KuaNACE \ BOTTOM  EE   31A<br>80<br>“RS<br>0 SSL<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>Fig 12c.   Maximum Avalanche Energy<br>Vs. Drain Current<br>3.0<br>2.5<br>ESUHREEEEE<br>ID = 250μA<br>2.0<br>PST<br>1.5<br>SE<br>1.0<br>PPLE<br>0.5<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>PATE<br>VGS(th) Gate threshold Voltage (V)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 14.** Threshold Voltage Vs. Temperature 

**Fig 13b.** Gate Charge Test Circuit 

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1000<br>Duty Cycle = Single Pulse<br>100 Allowed avalanche Current vs<br>avalanche  pulsewidth,  tav<br>assuming Δ Tj = 25°C due to<br>0.01<br>avalanche losses. Note: In no<br>10 case should Tj be allowed to<br>0.05 exceed Tjmax<br>0.10<br>1<br>0.1 | TEL EE ETE EE EEE EET LT<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.   Typical Avalanche Current Vs.Pulsewidth<br>100<br>TOP          Single Pulse                 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>(For further info, see AN-1005 at www.irf.com)<br>BOTTOM   1% Duty Cycle<br>1. Avalanche failures assumption:<br>80 ID = 31A<br>  Purely a thermal phenomenon and failure occurs at a<br>    temperature far in excess of Tjmax. This is validated for<br>    every part type.<br>60 S He 2. Safe operation in Avalanche is allowed as long asTjmax is<br>  not exceeded.<br>SO 3. Equation below based on circuit and waveforms shown in<br>40   Figures 12a, 12b.<br>4. PD (ave) = Average power dissipation per single<br>SAE     avalanche pulse.<br>5. BV = Rated breakdown voltage (1.3 factor accounts for<br>20     voltage increase during avalanche).<br>6. Iav = Allowable avalanche current.<br>SSS 7.  Δ T = Allowable rise in junction temperature, not to exceed<br>ELL SSN.<br>0     Tjmax (assumed as 25°C in Figure 15, 16).<br>25 50 75 100 125 150 175   tav = Average time in avalanche.<br>  D = Duty cycle in avalanche =  tav ·f<br>Starting TJ , Junction Temperature (°C)   ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


- ZthJC(D, tav) = Transient thermal resistance, see figure 11) 

## **PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2 T/ [1.3·BV·Zth]** 

- **EAS (AR) = PD (ave)·tav** 

**Fig 16.** Maximum Avalanche Energy Vs. Temperature 

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Driver Gate Drive<br>P.W.<br>D.U.T + { P.W. + Period ——— — D = —— Period<br>) [©)] Circuit    •  Layout Considerations | V t t GS=10<br>| — -  •   GroundLow StrayPlane Inductance<br> •   CurrentLow LeakageTransformerInductance ®@ D.U.T. ISD Waveform<br>+<br>Reverse<br>@ - a | = - ° + RecoveryCurrent r Body Diode ForwardCurrent di/dt 7\ ——<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 we VDD<br>•  Re-Applied<br>Re •   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop ma<br>(4 •   i/dt controlled by Rg Vp p - I<br>•<br>D.U.T. - Device Under Test e e<br>Isp controlled by Duty Factor "D" ® t Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


## **Fig 17.** 

## Reverse Recovery Test Circuit or N-Channel HEXFET ® ower MOSFETs 

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-<br>≤ 1  ys<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


## **Fig 18a.** Switching Time Test Circuit 

**==> picture [137 x 93] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDS<br>90%<br>10%<br>VGS | |<br>la h > ! ab l e<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Switching Time Waveforms 

www.irf.com 

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TO-220AB packages are not recommended for Surface Mount Application. 

**Note: For the most current drawing please refer to IR website at http://www.irf.com/package/** 

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## **Ordering Information** 

|**Base part**<br>**number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Complete Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|AUIRLZ44Z|TO-220|Tube|**Quantity**<br>50|AUIRLZ44Z|



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www.irf.com 

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## Links

- [View this product on Novapart](https://novapart.co/products/AUIRLZ44Z/power-mosfet-n-channel-55-v-51-a-0011-ohm-to-220ab)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/auirlz44z/mosfet-n-ch-55v-51a-to-220/dp/2062106)
---

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