# Power MOSFET, N Channel, 55 V, 42 A, 0.027 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:1865624/)

**URL**: https://novapart.co/products/AUIRLR2905/power-mosfet-n-channel-55-v-42-a-0027-ohm-to-252
**SKU**: AUIRLR2905
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.9220
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Qualification | AEC-Q101 |
| Power Dissipation | 110W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 110W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.027ohm |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 42A |
| Drain Source On State Resistance | 0.027ohm |
| Automotive Qualification Standard | AEC-Q101 |
| Gate Source Threshold Voltage Max | 1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1865624/)

AUIRLR2905 AUIRLU2905 ~~po~~ 

**AUTOMOTIVE GRADE** 

## ~~Cinfineon~~ 

## **Features** 

- Advanced Planar Technology 

## HEXFET[® ] Power MOSFET 

- Logic Level Gate Drive 

- Low On-Resistance 

- Dynamic dV/dT Rating 

- 175°C Operating Temperature 

- Fast Switching 

- Fully Avalanche Rated 

|**VDSS**|**55V**|
|---|---|
|**RDS(on)            max.**|**27m**|
|**ID**|**42A**|



- Repetitive Avalanche Allowed up to Tjmax 

- Lead-Free, RoHS Compliant 

| Lead-Free, RoHS CompliantLead-Free, RoHS Compliant<br>D|
|---|
|Automotive Qualified *<br>D|
|**Description**|
|Specifically designed for Automotive applications, this cellular<br>design of HEXFET® Power MOSFETs utilizes the latest<br>S<br>G<br>G<br>S<br>D|
|processing techniques to achieve low on-resistance per silicon<br>area. This benefit combined with the fast switching speed and<br>D-Pak<br>AUIRLR2905<br>I-Pak<br>AUIRLU2905|
|ruggedized device design that HEXFET power MOSFETs are well<br>known for, provides the designer with an extremely efficient and<br>**G**<br>**D**<br>**S**|
|reliable device for use in Automotive and a wide variety of other<br>applications.<br>Gate<br>Drain<br>Source|
|**Base part number**<br>**Package Type**<br>**Standard Pack**<br>**Orderable Part Number**<br>**Form**<br>**Quantity**<br>AUIRLU2905<br>I-Pak<br>Tube<br>75<br>AUIRLU2905<br>AUIRLR2905<br>Tube<br>75<br>AUIRLR2905<br>Tape andReel Left<br>3000<br>AUIRLR2905TRL<br>D-Pak<br>~~ee~~|
|**Absolute Maximum Ratings**|
|Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.   These are stress|
|ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not|
|implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance|
|and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless|
|**Symbol**<br>**Parameter**<br>**Max.**<br>**Units**<br>ID@ TC= 25°C<br>Continuous Drain Current, VGS@ 10V<br>42<br>A<br>ID@ TC= 100°C<br>Continuous Drain Current, VGS@ 10V<br>30<br>IDM<br>Pulsed Drain Current<br>160<br>PD@TC= 25°C<br>Maximum Power Dissipation<br>110<br>W<br>~~————~~<br>~~ae~~|
|Linear Derating Factor<br>0.71<br>W/°C|
|VGS<br>Gate-to-SourceVoltage<br>± 16<br>V<br>EAS<br>Single Pulse Avalanche Energy (ThermallyLimited) <br>210<br>mJ<br>EAS(tested)<br>Single Pulse Avalanche Energy (tested Value) <br>200<br>IAR<br>Avalanche Current<br>25<br>A<br>EAR<br>Repetitive Avalanche Energy <br>11<br>mJ<br>~~—————~~|
|dv/dt<br>Peak Diode Recovery<br>5.0<br>V/ns<br>TJ<br>Operating Junction and<br>-55  to + 175<br>TSTG<br>Storage Temperature Range<br>°C<br>SolderingTemperature,for 10 seconds(1.6mm from case)<br>300<br>~~a~~<br>~~a~~|
|**Thermal Resistance**|
|**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**|
|RJC<br>Junction-to-Case<br>–––<br>1.4|
|°C/W<br>RJA<br>Junction-to-Ambient(PCB Mount) <br>–––<br>50|
|RJA<br>Junction-to-Ambient<br>–––<br>110|



HEXFET® is a registered trademark of Infineon. 

***** Qualification standards can be found at www.infineon.com 

**Thermal Resistance** 

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**Static @ TJ = 25°C (unless otherwise specified)** 

|~~es~~|||||||
|---|---|---|---|---|---|---|
|Qg<br>~~es~~|Total Gate Charge|–––|–––|48|nC|ID= 25A<br>VDS= 44V<br>VGS=5.0V|
|g<br>Qgs<br>~~es~~<br>~~Rs~~|Gate-to-Source Charge|–––|–––|8.6|||
|Qgd<br>~~Rs~~<br>~~es~~|Gate-to-Drain Charge|–––|–––|25|||
|gd<br>td(on)<br>~~Rs~~<br>~~es~~|Turn-On Delay Time|–––|11|–––|ns|VDD= 28V<br>ID= 25A<br>RG= 3.4VGS= 5.0V<br>RD=1.1 |
|d(on)<br>tr<br>~~es~~<br>~~es~~|Rise Time|–––|84|–––|||
|td(off)<br>~~es~~<br>~~es~~|Turn-Off DelayTime<br>|–––<br>|26<br>|–––<br>|||
|d(off)<br>tf<br>~~es~~<br>~~es~~|Fall Time<br>|–––<br>|15<br>|–––<br>|||
|LD<br>~~es++}~~|Internal Drain Inductance<br>~~++}~~|–––<br>~~++}~~|4.5<br>~~++}~~|–––<br>~~++}~~|nH<br>~~|~~|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact|
|LS<br>~~++}~~|Internal Source Inductance<br>~~++}~~|–––<br>~~++}~~|7.5<br>~~++}~~|–––<br>~~++}~~|||
|Ciss<br>~~++}~~<br>~~es~~|Input Capacitance<br>~~++}~~<br>~~es~~|–––<br>~~++}~~<br>~~es~~|1700<br>~~++}~~<br>~~es~~|–––<br>~~++}~~<br>~~es~~|pF<br>~~|~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz,See Fig. 5|
|Coss<br>~~es~~<br>~~es~~|OutputCapacitance<br>~~es~~|–––<br>~~es~~|400<br>~~es~~|–––<br>~~es~~|||
|Crss<br>~~es~~<br>~~es~~|ReverseTransferCapacitance<br>~~es~~|–––<br>~~es~~|150<br>~~es~~|–––<br>~~es~~|||
|**Diode Characteristics**<br>~~es~~|||||||
|~~a~~|**Parameter **<br>~~ee~~|**Min.**<br>~~ee~~|**Typ. M**<br>~~ee~~|**. Max.**|**Units**|**Conditions**|
|IS<br>~~ft)~~|Continuous Source Current<br>(Body Diode)<br>~~ft)~~|–––<br>~~ft)~~|–––<br>~~ft)~~|42<br>~~ft)~~|A<br>~~ft)~~<br>~~QO~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.|
|ISM<br>~~ft)~~<br>~~es~~|Pulsed Source Current<br>(Body Diode)<br>~~ft)~~<br>~~Ts~~|–––<br>~~ft)~~<br>~~I~~|–––<br>~~ft)~~<br>~~Us~~|160<br>~~ft)~~<br>~~Us~~|||
|VSD<br>~~es~~<br>~~iT~~|Diode Forward Voltage<br>~~Ts~~<br>~~iT~~|–––<br>~~I~~<br>~~iT~~|–––<br>~~Us~~<br>~~iT~~|1.3<br>~~Us~~<br>~~iT~~|V<br>~~QO~~<br>~~iT~~|TJ =25°C,IS=25A, VGS =0V<br>~~iT~~|
|trr<br>~~es~~<br>~~iT~~<br>~~[$f~~|Reverse Recovery Time<br>~~Ts ~~<br>~~iT~~<br>~~[$f~~<br>~~jt~~|–––<br> ~~I ~~<br>~~iT~~<br>~~jt~~|80<br> ~~Us~~<br>~~iT~~<br>~~jttt~~|120<br>~~Us ~~<br>~~iT~~<br>~~tt~~|ns<br> ~~QO~~<br>~~iT~~<br>~~tt~~|TJ= 25°C ,IF= 25A<br>nC   di/dt = 100A/µs<br>~~iT~~|
|Qrr<br>~~iT~~<br>~~[$f~~|Reverse RecoveryCharge<br>~~iT~~<br>~~[$f~~<br>~~jt~~|–––<br>~~iT~~<br>~~jt~~|210<br>~~iT~~<br>~~jttt~~|320<br>~~iT~~<br>~~tt~~|nC   di/dt = 100A/<br>~~iT~~<br>~~tt~~||
|ton<br>~~iT~~<br>~~[$f~~|Forward Turn-On Time<br>~~iT~~<br>~~[$f~~<br>~~jt~~|Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>~~iT~~<br>~~jttt~~|||||



**Notes:** 

-  Repetitive rating;  pulse width limited by max. junction temperature. (See fig. 11) 

-  VDD = 25V,Starting  TJ = 25°C, L = 470µH, RG = 25, IAS = 25A (See fig. 12) 

-  ISD 25A, di/dt 270A/µs, VDD V(BR)DSS, TJ  175°C. 

-  Pulse width 300µs; duty cycle  2%. 

- When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. 

-  R is measured at Tj approximately 90°C. 

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**==> picture [537 x 214] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 1000<br>                   VGS                     VGS<br> TOP           15V  TOP           15V<br>                   12V                    12V<br>                   10V                    10V<br>                   8.0V                    8.0V<br>                   6.0V                    6.0V<br>                   4.0V                    4.0V<br>                   3.0V                    3.0V<br> BOTTOM   2.5V  BOTTOM   2.5V<br>100 100<br>Te (aE<br>10 10<br>2.5V<br>SP Sth a a Sh<br>2.5V<br> 20µs PULSE WIDTH  20µs PULSE WIDTH<br>1  T   = 25°CJ A 1  T   = 175°CJ<br>0.1 oe 1 10 100 |  fee 0.1 1 10 100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>I   , Drain-to-Source Current (A)D I   , Drain-to-Source Current (A)D<br>**----- End of picture text -----**<br>


**Fig. 1** Typical Output Characteristics 

**Fig. 2** Typical Output Characteristics 

**==> picture [221 x 218] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>T  = 25°CJ<br>100 TE)<br>T  J = 175°C<br>10<br>Pati<br> V     = 25V DS<br> 20µs PULSE WIDTH<br>1 A ELL<br>2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0<br>V     , Gate-to-Source Voltage (V)GS<br>D<br>I   , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**==> picture [229 x 214] intentionally omitted <==**

**----- Start of picture text -----**<br>
3.0<br> I    = 41AD<br>2.5<br>2.0<br>tte<br>1.5<br>1.0<br>0.5 ean<br> V      = 10V GS<br>0.0<br>-60 EECEEEE -40 -20 0 20 40 60 80 100 Leer 120 140 160 180<br>T   , Junction Temperature (°C)J<br>(Normalized)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig. 3** Typical Transfer Characteristics 

**Fig. 4** Normalized On-Resistance Vs. Temperature 

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## ~~Cinfineon~~ 

**==> picture [226 x 213] intentionally omitted <==**

**----- Start of picture text -----**<br>
2800<br>V      = 0V,         f = 1MHzGS<br>C      = C     + C     ,   C     SHORTED iss         gs         gd         ds<br>2400 C      = Crss         gd<br>— C iss C      = oss        ds         gdC     + C<br>2000<br>a<br>1600<br>C oss<br>1200 Son een<br>800<br>C  rss<br>400 en<br>0 SSE<br>1 10 100<br>V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

**==> picture [220 x 214] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 =:<br>100<br>T  = 175°CJ<br>T  = 25°CJ<br>10 /7 V      = 0V GS<br>0.4 0.8 1.2 1.6 2.0 2.4<br>V     , Source-to-Drain Voltage (V)SD<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


**Fig. 7** Typical Source-to-Drain Diode Forward Voltage 

**==> picture [229 x 605] intentionally omitted <==**

**----- Start of picture text -----**<br>
15<br>I    = 25AD<br> V      = 44VDS<br> V      = 28VDS<br>12 Fae<br>9 fii ie<br>6 PTT TAT<br>3<br>pana’ 4 ceneae<br> FOR TEST CIRCUIT<br>    SEE FIGURE 13<br>0 JET<br>0 10 20 30 40 50 60 70<br>Q   , Total Gate Charge (nC)G<br>Fig 6.  Typical Gate Charge vs.<br>      Gate-to-Source Voltage<br>1000<br> OPERATION IN THIS AREA LIMITED<br>                       BY R DS(on)<br>100 10µs<br>2p Sane Sea<br>100µs<br>10<br>1ms<br> T     = 25°CC 10ms<br> T     = 175°CJ<br>Bests  Single Pulse Ny | I<br>1<br>1 10 100<br>V     , Drain-to-Source Voltage (V)DS<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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**==> picture [193 x 187] intentionally omitted <==**

**----- Start of picture text -----**<br>
50<br>40 Sam LIMITED BY PACKAGE an<br>30<br>Po<br>BREN Pye<br>20<br>P| tL Pf<br>Pitt TT TT TING<br>PETE<br>10<br>Pt ttyTETttTELTt iy<br>0<br>25 SE 50 75 RRE 100 125 150 175<br>T   , Case TemperatureC (  C)°<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


**Fig 10a.** Switching Time Test Circuit 

**Fig 9.** Maximum Drain Current Vs. Case Temperature 

**Fig 10b.** Switching Time Waveforms 

**==> picture [409 x 186] intentionally omitted <==**

**----- Start of picture text -----**<br>
 10<br> 1<br>D = 0.50<br>0.20<br>0.10<br>PDM<br>0.1 0.05 —— ar<br>t1<br>0.02 SINGLE PULSE<br>0.01 (THERMAL RESPONSE) t2<br>Notes:<br>1. Duty factor D = t   / t 1 2<br>2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1<br>t  , Rectangular Pulse Duration (sec)1<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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**==> picture [228 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
15V<br>L DRIVER<br>VDS<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>a ll<br>20V<br>tp 0.01<br>=<br>o f |<br>Fig 12a.   Unclamped Inductive Test Circuit<br>**----- End of picture text -----**<br>


**==> picture [122 x 28] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br>


**==> picture [224 x 213] intentionally omitted <==**

**----- Start of picture text -----**<br>
500<br>                    ID<br>TOP            10A<br>                   17A<br>400 BOTTOM    25A<br>300<br>200<br>NINE EL<br>100 ASA<br>BANG<br>|  V      = 25VDD SSN<br>0<br>25 50 75 100 125 150 175<br>Starting T  , Junction Temperature (°C)J<br>AS<br>E     ,   Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy vs. Drain Current 

IAS 

**Fig 12b.** Unclamped Inductive Waveforms 

**==> picture [172 x 118] intentionally omitted <==**

**----- Start of picture text -----**<br>
Id<br>Vds<br>Vgs<br>Vgs(th) |<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 13a.** Gate Charge Waveform 

**Fig 13b.** Gate Charge Test Circuit 

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**Fig 14.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs 

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AUIRLR/U2905 ~~LLL~~ 

## ~~Cinfin eon~~ 

**D-Pak (TO-252AA) Package Outline** (Dimensions are shown in millimeters (inches)) 

## **D-Pak (TO-252AA) Part Marking Information** 

**==> picture [330 x 148] intentionally omitted <==**

**----- Start of picture text -----**<br>
Part Number  AULR2905<br>Date Code<br>IR Logo  T éaR YWWA  Y= Year<br>WW= Work Week<br><br>XX         XX<br>[|sd<br>Lot Code<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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AUIRLR/U2905 ~~LLL~~ 

## ~~Cinfineon~~ 

**I-Pak (TO-251AA)  Package Outline** (Dimensions are shown in millimeters (inches) 

## **I-Pak (TO-251AA)  Part Marking Information** 

**==> picture [330 x 148] intentionally omitted <==**

**----- Start of picture text -----**<br>
Part Number  AULU2905<br>Date Code<br>IR Logo  T é4R YWWA  Y= Year<br>WW= Work Week<br><br>XX         XX<br>[|<br>Lot Code<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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**D-Pak (TO-252AA) Tape & Reel Information** (Dimensions are shown in millimeters (inches)) 

**==> picture [429 x 370] intentionally omitted <==**

**----- Start of picture text -----**<br>
TR TRR TRL<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>  13 INCH<br>16 mm<br>**----- End of picture text -----**<br>


NOTES : 

1.  CONTROLLING DIMENSION : MILLIMETER. 

2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 

3.  OUTLINE CONFORMS TO EIA-481 & EIA-541. 

NOTES : 

1. OUTLINE CONFORMS TO EIA-481. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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## **Qualification Information** 

|**Qualification Information**|**Qualification Information**|||
|---|---|---|---|
|**Qualification Level**||Automotive<br>(per AEC-Q101)||
|||Comments: This part number(s) passed Automotive qualification. Infineon’s<br>Industrial and Consumer qualification level is granted by extension of the higher<br>Automotive level.||
|**Moisture Sensitivity Level**||D-Pak|MSL1|
|||I-Pak||
|**ESD**|Machine Model|Class M4  (+/- 425V)† <br>AEC-Q101-002||
||Human Body Model|Class H1B (+/- 1000V)† <br>AEC-Q101-001||
||Charged Device Model|Class C5 (+/- 1125V)† <br>AEC-Q101-005||
|**RoHS Compliant**||Yes||



- Highest passing voltage. 

## **Revision History** 

|**Date**||**Comments**|
|---|---|---|
|||Updated datasheet with corporate template|
|12/11/2015||Corrected ordering table on page 1.|
|||Addedpackage outline andpart markingonpage 9|



**Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.** 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

11 

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