# Power MOSFET, N Channel, 55 V, 2 A, 0.14 ohm, SOT-223, Surface Mount
**URL**: https://novapart.co/products/AUIRLL014NTR/power-mosfet-n-channel-55-v-2-a-014-ohm-sot-223
**SKU**: AUIRLL014NTR
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2450
**Stock**: 10+
## Specifications
| Parameter | Value |
|---|---|
| No. Of Pins | 4Pins |
| Channel Type | N Channel |
| Power Dissipation | 1W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 1W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.14ohm |
| Transistor Case Style | SOT-223 |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 2A |
| Drain Source On State Resistance | 0.14ohm |
| Gate Source Threshold Voltage Max | 2V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2148071/)
AUIRLL014N ~~_—~~
**AUTOMOTIVE GRADE**
HEXFET[® ] Power MOSFET
## ~~Cinfin eon~~
## **Features**
|Advanced Planar Technology
Low On-Resistance
Logic Level Gate Drive
Dynamic dv/dt Rating
150°C Operating Temperature
Fast Switching||||||**VDSS**
**55V**
**RDS(on) max.**
**0.14**
**ID**
**2.0A**
~~——~~|
|---|---|---|---|---|---|---|
|Fully Avalanche Rated|||||||
|Repetitive Avalanche Allowed up to Tjmax||||||D|
|Lead-Free, RoHS Compliant|||||||
|Automotive Qualified *||||||S|
|**Description**||||||G
D|
|Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest||||||SOT-223
AUIRLL014N|
|processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of|**G**
**D**
**S**
Gate
Drain
Source
~~-—}——_—~~||||||
|other applications
**Base part number**
**Package Type**
**Standard Pack**
**Form**
AUIRLL014N
SOT-223
Tape and Reel
~~ee~~|**Standard Pack**
**Quantity**
2500|||||**Orderable Part Number**
AUIRLL014NTR|
|**Absolute Maximum Ratings**|||||||
|Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress|||Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress||||
|ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not||||ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not|ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not||
|implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance||||implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance|||
|and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless|||||||
|otherwise specified.|||||||
|**Symbol**
**Parameter**||||||**Max.**
**Units**|
|ID@ TA= 25°C
Continuous Drain Current, VGS@ 10V||||||2.8|
|ID @TA= 25°C
Continuous Drain Current,VGS @10V
ID @TA= 70°C
Continuous Drain Current,VGS @10V||||||A
2.0
1.6|
|IDM
Pulsed Drain Current||||||16|
|PD@TA= 25°C
Maximum Power Dissipation (PCB Mount)
2.1
PD@TA= 25°C
Maximum Power Dissipation (PCB Mount)
1.0
Linear DeratingFactor(PCB Mount)
8.3
mW/°C
W
~~er~~|||||||
|VGS
Gate-to-SourceVoltage||||||± 16
V|
|EAS
Single Pulse Avalanche Energy (ThermallyLimited) ||||||32
mJ|
|IAR
Avalanche Current||||||2.0
A|
|dv/dt
Peak Diode Recoverydv/dt
7.2
V/ns
TJ
Operating Junction and
-55 to + 150
°C
TSTG
StorageTemperatureRange
EAR
Repetitive Avalanche Energy
0.1
mJ
~~Soo~~|||||||
|**Thermal Resistance**|||||||
|**Symbol**
**Parameter**
**Typ.**
**Max.**
**Units**
°C/W
RJA
Junction-to-Ambient(PCB Mount,steadystate)
90
120
RJA
Junction-to-Ambient(PCB Mount,steadystate)
50
60
~~——————————~~|||||||
|HEXFET® is a registered trademark of Infineon.|||||||
|*****Qualification standards can be found atwww.infineon.com
~~———_—_~~|||||||
1 ~~———_—_~~
2015-10-29
~~Cinfineon~~
AUIRLL014N ~~|~~
**Static @ TJ = 25°C (unless otherwise specified)**
**==> picture [551 x 448] intentionally omitted <==**
**----- Start of picture text -----**
||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Parameter|Min.|Typ. Max. Units|Conditions|
|es|ns|Is|rs|Ot|
|es|V(BR)DSS|Rs|Drain-to-Source Breakdown Voltage|55|–––|–––|V|VGS|= 0V, ID|= 250µA|
|a|V(BR)DSS/TJ|Breakdown Voltage Temp. Coefficient|––– 0.015 –––|QO|V/°C Reference to 25°C, ID = 1mA|
|–––|–––|0.14|VGS = 10V, ID = 2.0A |
|a|a|ee|
|RDS(on)|Static Drain-to-Source On-Resistance|a|–––|–––|0.20||VGS = 5.0V, ID = 1.2A |
|a|–––|a|–––|0.28|e|e|VGS = 4.0V, ID = 1.0A |
|a|VGS(th)|Gate Threshold Voltage|1.0|–––|es|2.0|V|VDS = VGS, ID = 250µA|
|es|gfs|Forward Trans|conducta|rs|nce|2.|Ps|3|–––|–––|QO|S|VDS = 25V, ID = 1.0A|
|–––|–––|25|[=][ 55V, V][GS]|[=][ 0V ]|
|a|IDSS|Drain-to-Source Leakage Current|Pt|–––|–––|250|µA|PO|V|[V][DS]|DS|= 44V,VGS|= 0V,TJ|= 150°C|
|Gate-to-Source Forward Leakage|–––|–––|100|[=][ 16V ]|
|Bo|IGSS|eeff|Gate-to-Source Reverse Leakage|–––|–––|-100|nA|Pe|V|[V][GS]|GS|=|-16V|
|Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)|
|es|Qg|ee|Total Gate Charge|–––|9.5|14|ID = 2.0A|
|Qgs|Gate-to-Source Charge|–––|1.1|1.7|nC|VDS = 44V|
|ee|
|es|Qgd|ee|Gate-to-Drain Charge|–––|3.0|4.4|VGS = 10V,|See Fig|6|and|9||
|es|td(on)|ee|Turn-On Delay Time|–––|5.1|–––|VDD = 28V|
|tr|Rise Time|–––|4.9|–––|ID = 2.0A|
|es|ns|
|es|td(off)|Turn-Off Delay Time|–––|14|–––|RG = 6.0|
|es|tf|es|Fall Time|–––|2.9|–––|RD = 14See Fig. 10 |
|Ciss|Input Capacitance|–––|230|–––|VGS = 0V|
|esee|
|es|Coss|Output Capacitance|–––|66|–––|pF|VDS = 25V|
|Crss|Reverse Transfer Capacitance|–––|30|–––|ƒ = 1.0MHz, See Fig.5|
|es|
|Diode Characteristics|
|ee|Parameter|nD|Min.|ts|Typ. M|(OO|ax.|Units|Conditions|
|Continuous Source Current|MOSFET symbol|
|IS|(Body Diode)|–––|–––|1.3|showing the|
|A|
|Pulsed Source Current|integral reverse|
|>|ISM|(Body Diode)|HL|–––|–––|16|p-n junction diode.|a|
|es|VSD|ee|Diode Forward Voltage|–––|rs|Q|–––|1.0|V|TJ|= 25°C,IS = 2.0A,VGS|= 0V |
|trr|Reverse Recovery Time|–––|41|61|ns|TJ = 25°C ,IF = 2.0A,|
|Sees|Qrr|en|Reverse Recovery Charge|–––|73|110|nC|di/dt = 100A/µs||
|ton|Forward Turn-On Time|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)|
|es ee|
**----- End of picture text -----**
**Notes:**
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
VDD = 25V, starting TJ = 25°C, L = 4.0mH, RG = 25, IAS = 4.0A. (See fig. 12)
- ISD 2.0A, di/dt 170A/µs, VDD V(BR)DSS, TJ 150°C.
- Pulse width 300µs; duty cycle 2%.
- When mounted on FR-4 board using minimum recommended footprint.
- When mounted on 1 inch square copper board, for comparison with other SMD devices.
2
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AUIRLL014N
**==> picture [223 x 573] intentionally omitted <==**
**----- Start of picture text -----**
100
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10 ee
20µs PULSE WIDTH
3.0V
1 | T = 25°CJ
0.1 1 10 100
V , Drain-to-Source Voltage (V)DS
Fig. 1 Typical Output Characteristics
100
10 Py
T = 25°CJ
Ee T = 150J ° C
V = 25VDS
1 Zann 20µs PULSE WIDTH
3.0 4.0 5.0 6.0 7.0
V , Gate-to-Source Voltage (V)GS
D
I , Drain-to-Source Current (A)
D
I , Drain-to-Source Current (A)
**----- End of picture text -----**
**Fig. 3** Typical Transfer Characteristics
**==> picture [230 x 580] intentionally omitted <==**
**----- Start of picture text -----**
100
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
bg
3.0V
20µs PULSE WIDTH
1 iF T = 150°CJ
0.1 1 10 100
V , Drain-to-Source Voltage (V)DS
Fig. 2 Typical Output Characteristics
2.0
I = 2.0AD
1.5
ATT er
1.0
rT
0.5
ATEEET V = 10V GS
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature (°C)J
D
I , Drain-to-Source Current (A)
(Normalized)
DS(on)
R , Drain-to-Source On Resistance
**----- End of picture text -----**
**Fig. 4** Normalized On-Resistance vs. Temperature
3
2015-10-29
AUIRLL014N
**==> picture [226 x 214] intentionally omitted <==**
**----- Start of picture text -----**
400
V = 0V, f = 1MHzGSGS
C = C + C , C SHORTEDiss gs gd dsiss gs gd ds
C = C rss gdoss ds gd
C = C + Coss ds gdrss gdoss ds gd
300 O C ississ s
200 eee eal
C ossoss
100 Ca
C rssrss
:
0
1 10 100
Seat esestl
V , Drain-to-Source Voltage (V)DSDS
C, Capacitance (pF)
**----- End of picture text -----**
**==> picture [535 x 640] intentionally omitted <==**
**----- Start of picture text -----**
400 20
V = 0V, f = 1MHzGSGS I = 2.0AD
C = C + C , C SHORTEDiss gs gd dsiss gs gd ds V = 44VDS
C = C C = C + Coss ds gdrss gdoss ds gd 16 V = 28V DS
300 O C ississ s TE
12
200 eee eal ERED
C ossoss
8
100 Ca ae aan
C rssrss 4
: (lA
FOR TEST CIRCUIT
SEE FIGURE 9
0 A 0
1 10 100 0 3 6 9 12 15
Seat esestl pri| |
V , Drain-to-Source Voltage (V)DSDS Q , Total Gate Charge (nC)G
Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs.
Drain-to-Source Voltage Gate-to-Source Voltage
100 100
OPERATION IN THIS AREA LIMITED
BY R DS(on)
10 10 10µs
T = 150°C J 100µs
T = 25°CJ
1ms
1 1
10ms
T = 25°CA
T = 150°CJ
0.1 AAI) V = 0V GS A 0.1 LL Single Pulse
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100
V , Source-to-Drain Voltage (V)SD V , Drain-to-Source Voltage (V)DS
Fig. 7 Typical Source-to-Drain Diode
Fig 8. Maximum Safe Operating Area
GS
V , Gate-to-Source Voltage (V)
I , Drain Current (A)D
I , Reverse Drain Current (A)SD
**----- End of picture text -----**
**Fig. 7** Typical Source-to-Drain Diode Forward Voltage
4 2015-10-29 ~~=°°.”~~ @ ~~|~~
AUIRLL014N ~~|~~
## ~~Cinfineon~~
**==> picture [167 x 114] intentionally omitted <==**
**----- Start of picture text -----**
Id
Vds
Vgs
|
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
**----- End of picture text -----**
**Fig 9a.** Basic Gate Charge Waveform
**Fig 10a.** Switching Time Test Circuit
**Fig 9b.** Gate Charge Test Circuit
**Fig 10b.** Switching Time Waveforms
**==> picture [478 x 214] intentionally omitted <==**
**----- Start of picture text -----**
1000
100
D = 0.50
$<} oe
0.20
re
0.10
10
=a==
0.05
PDM
0.02
0.01 t1
1 t2
Notes:
SINGLE PULSE 1. Duty factor D = t / t 1 2
(THERMAL RESPONSE)
0.1 2. Peak T = P x Z + T J DM thJA A A
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t , Rectangular Pulse Duration (sec)1
thJA
Thermal Response (Z )
**----- End of picture text -----**
**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
2015-10-29
5
AUIRLL014N
**==> picture [191 x 115] intentionally omitted <==**
**----- Start of picture text -----**
15V
L DRIVER
VDS
RG D.U.T +
- [V][DD]
IAS
20V
a tp 0.01
**----- End of picture text -----**
**Fig 12a.** Unclamped Inductive Test Circuit
**==> picture [224 x 213] intentionally omitted <==**
**----- Start of picture text -----**
80
ID
TOP 1.8A
3.2A
BOTTOM 4.0A
60 KELL
40 NEL
20
SSE V = 25VDD
0
25 50 75 100 125 150
Starting T , Junction Temperature (°C)J
AS
E , Single Pulse Avalanche Energy (mJ)
**----- End of picture text -----**
**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current
**==> picture [124 x 28] intentionally omitted <==**
**----- Start of picture text -----**
V(BR)DSS
tp
**----- End of picture text -----**
**==> picture [20 x 10] intentionally omitted <==**
**----- Start of picture text -----**
IAS
**----- End of picture text -----**
**Fig 12b.** Unclamped Inductive Waveforms
6
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Cinfir
AUIRLL014N
**Fig 13.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
2015-10-29
7
AUIRLL014N ~~|... ]~~
**SOT-223 (TO-261AA) Package Outline** (Dimensions are shown in millimeters (inches)
## ~~Cinfineon~~
## **SOT-223(TO-261AA) Part Marking Information**
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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~~Cinfineon~~
AUIRLL014N ~~|... ]~~
**SOT-223(TO-261AA) Tape and Reel** (Dimensions are shown in millimeters (inches)
**==> picture [412 x 177] intentionally omitted <==**
**----- Start of picture text -----**
4.10 (.161)
0.35 (.013)
3.90 (.154) 1.85 (.072)
0.25 (.010)
2.05 (.080) 1.65 (.065)
TR 1.95 (.077)
7.55 (.297)
7.45 (.294)
16.30 (.641)
7.60 (.299) 15.70 (.619)
7.40 (.292)
1.60 (.062)
1.50 (.059)
TYP.
FEED DIRECTION
7.10 (.279) 2.30 (.090)
6.90 (.272) 2.10 (.083)
12.10 (.475)
11.90 (.469)
**----- End of picture text -----**
NOTES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.
**==> picture [391 x 195] intentionally omitted <==**
**----- Start of picture text -----**
13.20 (.519) 15.40 (.607)
12.80 (.504) 11.90 (.469)
4
330.00 50.00 (1.969)
(13.000) MIN.
MAX.
NOTES : 18.40 (.724)
MAX.
1. OUTLINE COMFORMS TO EIA-418-1.
2. CONTROLLING DIMENSION: MILLIMETER.. 14.40 (.566) 4
3. DIMENSION MEASURED @ HUB. 12.40 (.488)
3
**----- End of picture text -----**
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
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|
AUIRLL014N
~~Cinfineon~~
~~|... ]~~|
AUIRLL014N
~~Cinfineon~~
~~|... ]~~|
|---|---|
|**Qualification Information**||
|**Qualification Level**
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
**Moisture Sensitivity Level**
SOT-223
MSL1
**ESD**
Machine Model
Class M1A (+/- 50V)†
AEC-Q101-002
Human Body Model
Class H0 (+/- 250V)†
AEC-Q101-001
Charged Device Model
Class C5 (+/- 1125V)†
AEC-Q101-005
**RoHS Compliant**
Yes
~~———~~|Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher|
|† Highest passing voltage.||
|**Revision History**||
|**Date**
**Comments**||
|
Added "Logic Level Gate Drive" bullet in the features section on page 1||
|3/25/2014
Updated part marking on page 8||
|
Updated data sheet with new IR corporate template||
|10/29/2015
Updated datasheet with corporate template||
|
Corrected orderingtable onpage 1.||
**Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.**
## **IMPORTANT NOTICE**
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com).
## **WARNINGS**
Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
10
2015-10-29
## Links
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- [Supplier page](https://es.farnell.com/en-ES/infineon/auirll014ntr/mosfet-n-ch-55v-2a-sot-223/dp/2148071)
---
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