# Power MOSFET, N Channel, 100 V, 51 A, 0.008 ohm, DirectFET M4, Surface Mount

![Product image](https://novapart.co/image/farnell:2579968/)

**URL**: https://novapart.co/products/AUIRL7766M2TR/power-mosfet-n-channel-100-v-51-a-0008-ohm
**SKU**: AUIRL7766M2TR
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7120
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 9Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | AEC-Q101 |
| Power Dissipation | 62.5W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 62.5W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.008ohm |
| Transistor Case Style | DirectFET M4 |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 51A |
| Drain Source On State Resistance | 0.008ohm |
| Automotive Qualification Standard | AEC-Q101 |
| Gate Source Threshold Voltage Max | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2579968/)

AUIRL7766M2TR ~~a~~ 

**AUTOMOTIVE GRADE** 

## ~~Cinfineon~~ 

## Automotive DirectFET[®] Power MOSFET  

- Advanced Process Technology 

|Automotive DirectFET[®]Power MOSFET <br><br>Advanced Process Technology|Automotive DirectFET[®]Power MOSFET <br><br>Advanced Process Technology|Automotive DirectFET[®]Power MOSFET <br><br>Advanced Process Technology|Automotive DirectFET[®]Power MOSFET <br><br>Advanced Process Technology|Automotive DirectFET[®]Power MOSFET <br><br>Advanced Process Technology|Automotive DirectFET[®]Power MOSFET <br><br>Advanced Process Technology|Automotive DirectFET[®]Power MOSFET <br><br>Advanced Process Technology|Automotive DirectFET[®]Power MOSFET <br><br>Advanced Process Technology|Automotive DirectFET|Automotive DirectFET|Automotive DirectFET|Automotive DirectFET[®]Power MOSFET |Automotive DirectFET[®]Power MOSFET |Automotive DirectFET[®]Power MOSFET |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**V(BR)DSS**<br>**100V**<br>**RDS(on)   typ.**<br>**8.0m**<br>**ID (Silicon Limited)**<br>**51A**<br> **max.**<br>**10m**<br>**Qg (typical)**<br>**44nC**<br>DirectFET® ISOMETRIC<br>M4<br>Applicable DirectFET®Outline and  Substrate Outline<br><br>Advanced Process Technology<br><br>Optimized for Automotive DC-DC and<br>other Heavy Load Applications<br><br>Logic Level Gate Drive<br><br>Exceptionally Small Footprint and Low Profile<br><br>High Power Density<br><br>Low Parasitic Parameters<br><br>Dual Sided Cooling<br><br>175°C Operating Temperature<br><br>Repetitive Avalanche Capability for Robustness and Reliability<br><br>Lead free, RoHS and Halogen free<br><br>Automotive Qualified *<br>D<br>D<br>G<br>S<br>S<br>S<br>S<br>~~=D~~<br>~~[LT~~<br>~~Jj~~<br>~~Jf~~<br>~~<j~~<br>~~|#iFm~~<br>~~T[T~~<br>~~7~~<br>~~JT~~<br>~~JT~~<br>~~4]~~||||||||**V(BR)DSS**|||**100V**|||
|||||||||**(BR)DSS**<br>**RDS(on)   typ.**<br> **max.**|||**8.0m**|||
||||||||||||**10m**|||
|||||||||**I**|||**51A**|||
||||||**ID (Silicon Limited)**<br>**51A**<br>**Qg (typical)**<br>**44nC**<br>DirectFET® ISOMETRIC<br>M4<br>Outline and  Substrate Outline<br>Repetitive Avalanche Capability for Robustness and Reliability<br>D<br>D<br>G<br>S<br>S<br>S<br>S<br>~~=D~~<br>~~#iFm~~<br>~~T[T~~<br>~~7~~<br>~~JT~~<br>~~JT~~|||**ID (Silicon Limited)**|||**51A**|||
|||||||||**D (Silicon Limited)**<br>**Qg (typical)**|||**44nC**|||
||||||||||||||ISOMETRIC<br>~~D~~<br>~~4]~~|
|**SB**<br>~~[LT~~<br>~~Jj~~|**SC**<br>~~Jj~~<br>~~Jf~~|~~Jf~~<br>~~<j~~|~~<j~~<br>~~|~~|**M2**<br>~~|~~|**M2**<br>~~#iFm~~|**M4**<br>~~#iFm~~|~~#iFm~~<br>~~T[T~~||**L4**<br>~~7~~|**L6**<br>~~7~~<br>~~JT~~|**L8**<br>~~JT~~<br>~~JT~~|~~JT~~|~~4]~~|



- Optimized for Automotive DC-DC and 

- Dual Sided Cooling 

## Applicable DirectFET[®] Outline and  Substrate Outline  

## **Description** 

The AUIRL7766M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems. 

This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging platform coupled with the latest silicon technology allows the AUIRL7766M2 to offer substantial system level savings and performance improvement specifically in high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. 

|automotive applications.|||||
|---|---|---|---|---|
|**Base Part Number**|**Package Type**|**Standard Pack**||**Orderable Part Number**|
|||**Form**|**Quantity**||
|AUIRL7766M2|DirectFET Medium Can|Tape and Reel|4800|AUIRL7766M2TR|



## **Absolute Maximum Ratings** 

|~~ee~~|**Parameter**<br>~~ee~~|**Max.**<br>~~ee~~|**Units**|
|---|---|---|---|
|VDS<br>~~ee~~|Drain-to-Source Voltage<br>~~ee~~|100<br>~~ee~~|V<br>~~ae~~|
|VGS<br>~~ee~~<br>~~———————~~|Gate-to-Source Voltage<br>~~ee~~<br>~~———————~~|±16<br>~~ee~~<br>~~———————~~<br>~~ae~~||
|ID @TC= 25°C<br>~~ee~~<br>~~ee~~<br>~~———————~~|Continuous Drain Current,VGS @10V(Silicon Limited) <br>~~ee~~<br>~~ee~~<br>~~———————~~|51<br>~~ee~~<br>~~ee~~<br>~~———————~~<br>~~ae~~|A<br>~~ae~~|
|ID @TC= 100°C<br>~~ee~~<br>~~———————~~|Continuous Drain Current,VGS @10V(Silicon Limited) <br>~~ee~~<br>~~———————~~|36<br>~~ee~~<br>~~———————~~<br>~~ae~~||
|ID @TA= 25°C<br>~~———————~~|Continuous Drain Current,VGS @10V(Silicon Limited) <br>~~———————~~|10<br>~~———————~~<br>~~ae~~||
|IDM<br>~~———————~~|Pulsed Drain Current<br>~~———————~~|204<br>~~———————~~<br>~~ae~~||
|PD @TC= 25°C<br>~~———————~~<br>~~ee~~|Power Dissipation<br>~~———————~~<br>~~ee~~|62.5<br>~~———————~~<br>~~ae~~<br>~~ee~~|W<br>~~ae~~<br>~~ee~~|
|PD @TA= 25°C<br>~~ee~~|Power Dissipation<br>~~ee~~|2.5<br>~~ee~~||
|EAS<br>~~ee~~|Single Pulse Avalanche Energy (ThermallyLimited) <br>~~ee~~|61<br>~~ee~~|mJ<br>~~ee~~<br>~~ee~~|
|EAS(Tested)<br>~~ee~~|Single Pulse Avalanche Energy <br>~~ee~~|237<br>~~ee~~<br>~~ee~~||
|IAR<br>~~ee~~|Avalanche Current<br>~~ee~~|See Fig. 16, 17, 18a, 18b<br>~~ee~~<br>~~ee~~|A<br>~~ee~~<br>~~ee~~|
|EAR<br>~~ee~~|Repetitive Avalanche Energy <br>~~ee~~||mJ<br>~~ee~~<br>~~ee~~|
|TP|Peak SolderingTemperature|270<br>~~ee~~|°C<br>~~ee~~<br>~~a(~~|
|TJ<br>TSTG<br>~~a(~~|Operating Junction and<br>Storage Temperature Range<br>~~a(~~|-55  to + 175<br>~~a(~~||



HEXFET® is a registered trademark of Infineon. ***** Qualification standards can be found at www.infineon.com 

1 

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~~Cinfineon~~ 

AUIRL7766M2TR ~~LLL~~ 

## **Thermal Resistance** 

|**Symbol**<br>**Parameter**<br>**Typ. **<br>**Max.**<br>**Units**|
|---|
|RJA<br>Junction-to-Ambient<br>–––<br>60|
|RJA<br>Junction-to-Ambient<br>12.5<br>–––|
|RJA<br>Junction-to-Ambient<br>20<br>–––<br>°C/W|
|RJ-Can<br>Junction-to-Can<br>–––<br>2.4|
|RJ-PCB<br>Junction-to-PCB Mounted<br>1.0<br>–––|
|Linear DeratingFactor<br>0.42<br>W/°C|
|**Static Electrical Characteristics@ TJ = 25°C(unless otherwise specified) **|
|**Symbol**<br>**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br>**Conditions**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>100<br>–––<br>–––<br>V<br>VGS= 0V, ID= 250µA<br>V(BR)DSS/TJBreakdown Voltage Temp. Coefficient<br>–––<br>0.067<br>–––<br>V/°C Reference to 25°C, ID= 5.0mA<br>RDS(on)<br>Static Drain-to-Source On-Resistance<br>–––<br>8.0<br>10<br>VGS= 10V, ID= 31A<br>–––<br>8.7<br>10.5<br>VGS= 4.5V, ID= 26A<br>VGS(th)<br>Gate Threshold Voltage<br>1.0<br>–––<br>2.5<br>V<br>VDS= VGS, ID= 150µA<br>VGS(th)/TJ<br>Gate Threshold Voltage Coefficient<br>–––<br>-7.3<br>––– mV/°C<br>gfs<br>Forward Transconductance<br>110<br>–––<br>–––<br>S<br>VDS= 25V, ID= 31A<br>m<br>~~a~~<br>~~GO~~<br>~~eG~~<br>~~—~~<br>~~—~~<br>~~ee~~<br>~~eee ee~~<br>~~a~~|
|RG<br>Internal Gate Resistance<br>–––<br>0.88<br>–––<br><br>IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>5.0<br>µA<br>VDS= 100V, VGS= 0V<br>–––<br>–––<br>250<br>VDS= 100V, VGS= 0V, TJ= 125°C<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>nA<br>VGS= 16V<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>VGS= -16V<br>~~a~~<br>~~DO~~<br>~~ee~~<br>~~ee~~<br>~~ee ee~~<br>~~7~~|
|**Dynamic Electrical Characteristics@ TJ = 25°C(unless otherwise specified) **|
|**Symbol**<br>**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br>**Conditions**<br>Qg<br>Total Gate Charge<br>–––<br>44<br>66<br>nC<br>VDS= 50V<br>Qgs1<br>Gate-to-Source Charge<br>–––<br>9.6<br>–––<br>VGS= 4.5V<br>Qgs2<br>Gate-to-Source Charge<br>–––<br>4.5<br>–––<br>ID= 31A<br>Qgd<br>Gate-to-Drain("Miller")Charge<br>–––<br>19<br>–––<br>See Fig. 11<br>Qgodr<br>Gate Charge Overdrive<br>–––<br>10.9<br>–––<br>Qsw<br>Switch Charge(Qgs2+ Qgd)<br>–––<br>23.5<br>–––<br>Qoss<br>Output Charge<br>–––<br>35<br>–––<br>nC<br>VDS= 16V, VGS= 0V<br>td(on)<br>Turn-On DelayTime<br>–––<br>16<br>–––<br>VDD= 50V<br>~~eeGe~~<br>~~rs~~<br>~~I~~<br>~~>~~<br>~~———~~<br>~~—~~|
|tr<br>Rise Time<br>–––<br>24<br>–––<br>ID= 31A|
|ns<br>td(off)<br>Turn-Off DelayTime<br>–––<br>120<br>–––<br>RG= 6.8|
|tf<br>Fall Time<br>–––<br>49<br>–––<br>VGS= 10V<br>Ciss<br>Input Capacitance<br>–––<br>5305<br>–––<br>pF<br>VGS= 0V<br>Coss<br>Output Capacitance<br>–––<br>460<br>–––<br>VDS= 25V<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>195<br>–––<br>ƒ= 1.0 MHz<br>Coss<br>Output Capacitance<br>–––<br>2735<br>–––<br>VGS= 0V, VDS= 1.0V,ƒ= 1.0 MHz<br>Coss<br>Output Capacitance<br>–––<br>270<br>–––<br>VGS= 0V, VDS= 80V,ƒ= 1.0 MHz<br>Cosseff.<br>Effective Output Capacitance<br>–––<br>370<br>–––<br>VGS= 0V, VDS= 0V to 80V<br>~~eeSe~~<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~eeee~~|



Notes  through  are on page 3 

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|<br>AUIRL7766M2TR<br>~~eesor~~|<br>AUIRL7766M2TR<br>~~eesor~~|<br>AUIRL7766M2TR<br>~~eesor~~|<br>AUIRL7766M2TR<br>~~eesor~~|<br>AUIRL7766M2TR<br>~~eesor~~|<br>AUIRL7766M2TR<br>~~eesor~~|<br>AUIRL7766M2TR<br>~~eesor~~|<br>AUIRL7766M2TR<br>~~eesor~~|
|---|---|---|---|---|---|---|---|
|**Diode Characteristics**||||||||
|**Symbol**<br>~~a~~|**Parameter**|**Min.**|**Typ. Max. Units**|**. Max. Units**|**. Max. Units**|**Conditions**|**Conditions**|
|IS<br>ISM|Continuous Source Current<br>(BodyDiode)<br>Pulsed Source Current<br>(BodyDiode) |–––   –––<br>–––   –––|–––   –––<br>–––   –––|51<br>204|A|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.|D<br>S<br>G|
|VSD|Diode Forward Voltage|–––|–––|1.3|V|TJ= 25°C,IS= 31A,VGS= 0V|= 0V|
|trr|Reverse RecoveryTime|–––|45|68|ns|TJ= 25°C, IF= 31A, VDD= 25V|= 25V|
|Qrr|Reverse RecoveryCharge|–––|83|125|nC|dv/dt = 100A/µs||



-  Surface mounted on 1 in. square Cu board  (still air). 

 Mounted to a PCB with small clip heatsink (still air) 

 Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air). 

-  Click on this section to link to the appropriate technical paper. 

-  Click on this section to link to the DirectFET[®] Website. 

-  Surface mounted on 1 in. square Cu board, steady state. 

-  TC measured with thermocouple mounted to top (Drain) of part. 

-  Repetitive rating;  pulse width limited by max. junction temperature. 

-  Starting TJ = 25°C, L = 0.13mH, RG = 50, IAS = 31A, VGS = 20V. 

-  Pulse width  400µs; duty cycle  2%. 

-  Used double sided cooling, mounting pad with large heatsink. 

-  Mounted on minimum footprint full size board with metalized back and with small clip heat sink. 

-  R is measured at TJ of approximately 90°C. 

3 2015-12-11 ~~me~~ 

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AUIRL7766M2TR<br>a<br>1000 1000<br>60µs PULSE WIDTH TOP           VGS15V 60µs PULSE WIDTH TOP           VGS15V<br>Tj = 25°C 10V Tj = 175°C 10V<br>7.0V 7.0V<br>4.5V 4.5V<br>100 3.5V 3.5V<br>3.0V2.8V 100 3.0V 2.8V<br>BOTTOM 2.5V BOTTOM 2.5V<br>Zo y—<br>10<br>2.5V<br>10<br>1<br>2.5V<br>0.1 1<br>0.1 1 10 100 1000 0.1 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig. 1  Typical Output Characteristics  Fig. 2  Typical Output Characteristics<br>25 40<br>ID = 31A<br>20<br>CLLLLL LELLLLD<br>30<br>TJ = 125°C<br>15<br>TJ = 125°C<br>20<br>10 Nal a m a n REGEDDZEan HT<br>TJ = 25°C<br>° 10<br>5 SEER T J  = 25 C co Le<br>Vgs = 10V<br>0 COE Ee 0 Pret<br>2 4 6 8 10 12 14 16 0 25 50 75 100 125 150 175 200<br>VGS, Gate -to -Source Voltage  (V) ID, Drain Current (A)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>)<br>RDS(on),  Drain-to -Source On Resistance (m<br>)<br> m<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig. 3** Typical On-Resistance vs. Gate Voltage 

**Fig. 4** Typical On-Resistance vs. Drain Current 

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**----- Start of picture text -----**<br>
1000 2.5<br>ID = 31A<br>TJ = -40°C V GS  = 10V<br>100 TJ = 25°C az 2.0 AY<br>TJ = 175°C<br>10<br>1.5<br>ae tT<br>1<br>1.0<br>vile ATT<br>VDS = 50V<br>60µs PULSE WIDTH<br>0.1 Ay tl PLT.<br>0.5<br>1 2 3 4 5<br>-60 -40 -20 0 20 40 60 80 100 120 140160 180<br>VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 5.** Transfer Characteristics 

**Fig 6.** Normalized On-Resistance vs. Temperature 

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AUIRL7766M2TR ~~LLL~~ 

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**----- Start of picture text -----**<br>
3.0<br>2.5<br>RR<br>2.0<br>SsePet<br>ID = 150µA<br>1.5<br>ID = 250µA<br>I D  = 1.0mA<br>1.0 I D  = 1.0A<br>ESTLELN<br>0.5<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig. 7** Typical Threshold Voltage vs. Junction Temperature 

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**----- Start of picture text -----**<br>
250<br>TJ = 25°C<br>200<br>Ty<br>150<br>ap72ene<br>TJ = 175°C<br>100<br>_ e/aa0<br>50<br>VDS = 5.0V<br>380µs PULSE WIDTH<br>Valfo _<br>0<br>0 20 40 60 80 100 120<br>ID,Drain-to-Source Current (A)<br>Typical Forward Trans conductance vs. Drain Current<br>14.0<br>ID= 31A<br>Pf<br>12.0<br>VDS= 80V<br>10.0 V DS = 50V<br>VDS= 20V<br>8.0<br>Gf<br>6.0<br>fp<br>4.0<br>Ane<br>2.0<br>An<br>0.0<br>0 20 40 60 80 100 120<br> QG,  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>Gfs, Forward Transconductance (S)<br>**----- End of picture text -----**<br>


**Fig 9.** Typical Forward Trans conductance vs. Drain Current 

**Fig 11.** Typical Gate Charge vs. Gate-to-Source Voltage 

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**----- Start of picture text -----**<br>
1000<br>100<br>Ly TJ = -40°C<br>TJ = 25°C a<br>TJ = 175°C<br>10<br>V GS  = 0V<br>1.0 LE[|<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>VSD, Source-to-Drain Voltage (V)<br>Fig 8.   Typical Source-Drain Diode Forward Voltage<br>100000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss    = C gs + Cgd,  C ds SHORTED<br>C rss    = C gd<br>Coss   = Cds + Cgd<br>«Ff.<br>10000<br>Ciss<br>Coss Se ea<br>1000<br>Sali Crss aii<br>100 aaitrsea<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 10.   Typical Capacitance vs. Drain-to-Source Voltage<br>60<br>50<br>40<br>SanNee<br>30<br>COE N<br>20<br>10 CECE<br>CELL<br>0<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>ISD, Reverse Drain Current (A)<br>C, Capacitance (pF)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Typical Source-Drain Diode Forward Voltage 

**Fig 10.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 12.** Maximum Drain Current vs. Case Temperature 

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## ~~Cinfin eon~~ 

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**----- Start of picture text -----**<br>
1000 250<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on) ID<br>TOP         6.7A<br>200 17A<br>100 Pe egy 100µsec NEL<br>| 1msec aN BOTTOM 31A<br>10msec<br>150<br>10 Akt<br>SHA DC | 100 ENE<br>1 sui eed St eat SENASN EEL<br>Tc = 25°C 50<br>Tj = 175°C<br>Single Pulse<br>0.1 PARE] 0 BBS |CoPS S SANL ar<br>0 1 10 100 1000 25 50 75 100 125 150 175<br>VDS, Drain-to-Source Voltage (V) Starting TJ , Junction Temperature (°C)<br>ID,  Drain-to-Source Current (A)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


## **Fig 13.** Maximum Safe Operating Area 

**Fig 14.** Maximum Avalanche Energy vs. Temperature 

**==> picture [436 x 437] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>TT Lo oi<br>1 D = 0.50<br>0.20<br>0.10<br>0.1 0.02 0.05 J J R1 R1 R2 R2 R3 R3 R4R4 CC Ri  0.0 (° 7 C/ 641  W) 0  .0000 i (sec) 21<br>0.01  1  1  2  2  3  3  4  4 0.36635 0.94890  0.0391496 0.000737<br>Ci= iRi<br>0.01 a0|| Ci i = iRi | 1.00767  0.0073206<br>SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 15.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>1000<br>Duty Cycle = Single Pulse<br>100 |emp Allowed avalanche Current vs avalanche  |<br>pulsewidth, tav, assuming Tj = 150°C and<br>Tstart =25°C (Single Pulse)<br>SSA<br>10 0.01<br>a<br>0.05<br>1 0.10<br>est vie Se<br>0.1 Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming   j = 25°C and<br>Tstart = 150°C.<br>Seema<br>0.01<br>ait a<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Avalanche Current (A)<br>Thermal Response ( Z  thJC ) °C/W<br>**----- End of picture text -----**<br>


**Fig 16.** Typical Avalanche Current vs. Pulse Width 

6 2015-12-11 ~~ee~~ 

**==> picture [65 x 30] intentionally omitted <==**

**----- Start of picture text -----**<br>
Cinfineon<br>**----- End of picture text -----**<br>


## AUIRL7766M2TR ~~|~~ 

**==> picture [204 x 196] intentionally omitted <==**

**----- Start of picture text -----**<br>
70<br>TOP          Single Pulse<br>60 BOTTOM   1.0% Duty Cycle<br>ID = 31A<br>KH<br>50<br>ON EEE<br>40<br>30<br>NENGTTE TTT<br>PINON EEE<br>20<br>PLL ANUN EE<br>10<br>NNN<br>LEE  PAARNL<br>0<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Notes on Repetitive Avalanche Curves , Figures 16, 17: (For further info, see AN-1005 at www.infineon.com)** 

1. Avalanche failures assumption: 

   - Purely a thermal phenomenon and failure occurs at a temperature far in 

   - excess of Tjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 

3.  Equation below based on circuit and waveforms shown in Figures 18a, 18b. 

4.  PD (ave) = Average power dissipation per single avalanche pulse. 

5.  BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

6.  Iav = Allowable avalanche current. 

7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 16, 17). 

   - tav = Average time in avalanche. 

   - D = Duty cycle in avalanche =  tav ·f 

   - ZthJC(D, tav) = Transient thermal resistance, see Figures 15) 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =**  **T/ ZthJC Iav = 2**  **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

**Fig 17.** Maximum Avalanche Energy vs. Temperature 

**Fig 18a.** Unclamped Inductive Test Circuit 

**Fig 18b.** Unclamped Inductive Waveforms 

**==> picture [22 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>**----- End of picture text -----**<br>


**Fig 19a.** Gate Charge Test Circuit 

**Fig 19b.** Gate Charge Waveform 

**Fig 20a.** Switching Time Test Circuit 

**Fig 20b.** Switching Time Waveforms 

2015-12-11 

7 

~~Cinfineon~~ 

AUIRL7766M2TR ~~LLL~~ 

## **DirectFET[®] Board Footprint, M4 (Medium Size Can).** 

Please see DirectFET **[®]** application note AN-1035 for all details regarding the assembly of DirectFET **[®]** . This includes all recommendations for stencil and  substrate designs. 

**==> picture [290 x 176] intentionally omitted <==**

**----- Start of picture text -----**<br>
G = GATE<br>D = DRAIN<br>S = SOURCE<br>D D<br>A<br>S S<br>i !<br>G<br>i]<br>S S<br>D D<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

8 

2015-12-11 

~~Cinfineon~~ 

## AUIRL7766M2TR ~~es~~ 

## **DirectFET[®] Outline Dimension, M4 Outline (Medium Size Can).** 

Please see DirectFET **[®]** application note AN-1035 for all details regarding the assembly of DirectFET **[®]** . This includes all recommendations for stencil and  substrate designs. 

||METRIC|METRIC|IMPERIAL|IMPERIAL|
|---|---|---|---|---|
|CODE|MIN|MAX|MIN|MAX|
|A|6.25|6.35|0.246|0.250|
|B|4.80|5.05|0.189|0.201|
|C|3.85|3.95|0.152|0.156|
|D|0.35|0.45|0.014|0.018|
|E|0.58|0.62|0.023|0.024|
|F<br>G|0.78<br>0.78|0.82<br>0.82|0.031<br>0.031|0.032<br>0.032|
|G<br>H|0.78<br>0.78|0.82<br>0.82|0.031<br>0.031|0.032<br>0.032|
|J<br>K|0.38<br>1.10|0.42<br>1.20|0.015<br>0.043|0.017<br>0.047|
|L|2.30|2.40|0.090|0.094|
|L1|3.50|3.60|0.138|0.142|
|M|0.68|0.74|0.027|0.029|
|P|0.09|0.17|0.003|0.007|
|R|0.02|0.08|0.001|0.003|



## **DirectFET[® ] Part Marking** 

**==> picture [197 x 175] intentionally omitted <==**

**----- Start of picture text -----**<br>
"AU" = GATE AND<br>AUTOMOTIVE MARKING<br>LOGO<br>PART NUMBER<br>BATCH NUMBER<br>DATE CODE<br>Line above the last character of<br>the date code indicates "Lead-Free"<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

9 

2015-12-11 

~~Cinfineon~~ 

AUIRL7766M2TR ~~|~~ 

## **DirectFET[® ] Tape & Reel Dimension (Showing component orientation)** 

**==> picture [212 x 169] intentionally omitted <==**

**----- Start of picture text -----**<br>
F D<br>rY<br>y 7<br>Ao<br>i<br>G<br>H<br>C B<br>E A<br>**----- End of picture text -----**<br>


## NOTE: Controlling dimensions in mm 

Std reel quantity is 4800 parts, ordered as AUIRL7766M2TR. 

|**REEL DIMENSIONS**|**REEL DIMENSIONS**|**REEL DIMENSIONS**|
|---|---|---|
|STANDARD OPTION**(QTY 4800)**|||
|METRIC||IMPERIAL|
|MIN<br>CODE|MAX|MAX<br>MIN|
|330.0|N.C|N.C<br>12.992|
|20.2|N.C|N.C<br>0.795|
|12.8|13.2|0.520<br>0.504|
|1.5|N.C|N.C<br>0.059|
|100.0|N.C|N.C<br>3.937|
|N.C|18.4|0.724<br>N.C|
|12.4|14.4|0.567<br>0.488|
|11.9|15.4|0.606<br>0.469|



## LOADED TAPE FEED DIRECTION 

|||||||||B|B|B||||||||||A|||||||||H||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||||||||||||||||||||,|||||||||
|||||||||||||||||||||||||||||||ry|||
|F<br>ry||||||||||||||||||||||N|||||||D|!||C|
||||||||||||||||||||||||||||||||||
|||~~|~~||||||||||||||||||||||||||||||||
||||||||||||||||||E||||||||||||G||||
||||||||||||||||||||||||||||||||||
|||||||||||||||||||||DIMENSIONS|||||||||||||
|||||||||||||||||||||METRIC||||||IMPERIAL|||||||
|NOTE: CONTROLLING<br>DIMENSIONS IN MM|||||||||||||||CODE|||||MIN||MAX||||MIN|||MAX||||
|||||||||||||||||A||||7.90||8.10||||0.311|||0.319||||
|||||||||||||||||B||||3.90||4.10||||0.154|||0.161||||
|||||||||||||||||C||||11.90||12.30||||0.469|||0.484||||
|||||||||||||||||D||||5.45||5.55||||0.215|||0.219||||
|||||||||||||||||E||||5.10||5.30||||0.201|||0.209||||
|||||||||||||||||F||||6.50||6.70||||0.256|||0.264||||
|||||||||||||||||G||||1.50||N.C||||0.059|||N.C||||
|||||||||||||||||H||||1.50||1.60||||0.059|||0.063||||



Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

10 

2015-12-11 

AUIRL7766M2TR ~~Cinfineon LLL~~ **Qualification Information** Automotive (per AEC-Q101) **Qualification Level** Comments: This part number(s) passed Automotive qualification. Infineon’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. **Moisture Sensitivity Level** DFET2 Medium Can MSL1 Class M4 (+/- 800V)[†] Machine Model AEC-Q101-002 Class H2 (+/- 3000V)[†  ] **ESD** Human Body Model AEC-Q101-001 N/A Charged Device Model AEC-Q101-005 **RoHS Compliant** Yes ~~——~~ †  Highest passing voltage. **Revision History Date Comments**  Updated datasheet with corporate template 12/11/2015  Corrected ordering table on page 1.  Updated Tape and Reel option on page 10 

**Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.** 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

11 

2015-12-11 



## Links

- [View this product on Novapart](https://novapart.co/products/AUIRL7766M2TR/power-mosfet-n-channel-100-v-51-a-0008-ohm)
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- [Supplier page](https://es.farnell.com/en-ES/infineon/auirl7766m2tr/mosfet-auto-n-ch-100v-directfetm4/dp/2579968)
---

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