# IGBT, 240 A, 1.7 V, 750 W, 600 V, TO-274, 3 Pins
**URL**: https://novapart.co/products/AUIRGPS4070D0/igbt-240-a-17-v-750-w-600-to-274-3-pins
**SKU**: AUIRGPS4070D0
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €9.9300
**Stock**: 10+
**Lead Time**: 190 days (indicative)
## Description
DC Collector Current:240A; Collector Emitter Saturation Voltage Vce(on):1.7V; Power Dissipation Pd:750W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-274; No
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 750W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-274 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 240A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 1.7V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2986433/)
~~Cinfineon~~
**AUTOMOTIVE GRADE** AUIRGPS4070D0 ~~a~~
_**INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE**_
**Features** Low VCE (on) Trench IGBT Technology C VCES = 600V Low Switching Losses IC = 160A, TC = 100°C 6µs SCSOA Square RBSOA G tsc 6µs, TJ(MAX) = 175°C 100% of the parts tested for ILM[] E VCE(on) typ. = 1.70V n-channel Positive VCE (on) Temperature Coefficient Soft Recovery Co-pak Diode o] Lead-Free, RoHS Compliant C Automotive Qualified * **Benefits** High Efficiency in a Wide Range of Applications Suitable for Applications in the Low to Mid-Range Frequencies G C[E ] Rugged Transient Performance for Increased Reliability PG-TO274-3-903 Excellent Current Sharing in Parallel Operation Low EMI G C E Gate Collector Emitter ~~———~~ **Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity** AUIRGPS4070D0 PG-TO274-3-903 Tube 25 AUIRGPS4070D0 ~~Se~~ **Absolute Maximum Ratings** ~~ee ee~~ Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VCES|Collector-to-Emitter Voltage|600|V|
|IC @TC= 25°C|Continuous Collector Current|240|A|
|IC @TC= 100°C|Continuous Collector Current|160||
|INOMINAL|Nominal Current|120||
|ICM|Pulse Collector Current,VGE= 15V|360||
|ILM|ClampedInductiveLoad Current,VGE= 20V|480||
|IF NOMINAL|Diode Nominal Current|120||
|IFM|Diode Maximum Forward Current|480||
|VGE|Continuous Gate-to-Emitter Voltage|±20|V|
||Transient Gate-to-Emitter Voltage|±30||
|PD @TC= 25°C|Maximum Power Dissipation|750|W
|
|PD @TC= 100°C
~~pf~~|Maximum Power Dissipation
~~pf~~|375
||
|TJ
TSTG
~~pf~~|Operating Junction and
Storage Temperature Range
~~pffd~~|-55 to +175
~~fd~~|°C
~~fd~~|
|~~pf~~|Soldering Temperature, for 10 sec.
~~pffd~~|300 (0.063 in. (1.6mm) from case)
~~fd~~||
## **Thermal Resistance**
||**Parameter**|**Typ.**|**Max. Units**|**Max. Units**|
|---|---|---|---|---|
|RJC (IGBT)|Thermal Resistance Junction-to-Case(each IGBT) |–––|0.20|°C/W|
|RJC(Diode)|Thermal Resistance Junction-to-Case(each Diode) |–––|0.45||
|RCS|Thermal Resistance,Case-to-Sink(flat, greased surface)|0.24|–––||
|RJA|Thermal Resistance,Junction-to-Ambient(typical socket mount)|–––|40||
* Qualification standards can be found at www.infineon.com
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## ~~Cinfin eon~~
## AUIRGPS4070D0 ~~_~~
|
AUIRGPS4070D0
~~Cinfineon~~
~~_~~||
|---|---|
|**Electrical Characteristics@ TJ = 25°C(unless otherwise specified)**||
|**Parameter**
**Min.**
**Typ. **
**Max. Units**
**Conditions**
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600
—
—
V
VGE =0V, IC =500µA
V(BR)CES/TJTemperature Coeff. of Breakdown Voltage
—
0.74
—
V/°C VGE= 0V,IC= 5mA(25°C-175°C)
VCE(on)
Collector-to-Emitter Saturation Voltage
—
1.7
2.0
V
IC= 120A,VGE= 15V,TJ= 25°C
—
2.0
—
IC =120A, VGE =15V, TJ =150°C
—
2.1
—
IC =120A, VGE =15V, TJ =175°C
~~es~~
~~nn~~
~~GR~~
~~es~~
~~nD(OD IYQO~~
~~es~~
~~I GDQU (~~
~~ee~~||
|VGE(th)
GateThresholdVoltage
4.0
—
6.5
V
VCE= VGE,IC=5.6mA
VGE(th)/TJThreshold Voltage temp. coefficient
—
-16
—
mV/°C VCE= VGE,IC= 5.6mA(25°C-175°C)
gfe
Forward Transconductance
—
87
—
S
VCE =50V, IC =120A
Collector-to-Emitter Leakage Current
—
1.0
200
µAVGE =0V, VCE =600V
—
2.0
—
mA
VGE= 0V,VCE= 600V,TJ= 175°C
ICES
~~a~~
~~ee ee~~
~~EEE~~||
|VFM
Diode Forward Voltage Drop
—
1.8
2.1
VIF= 120A
—
1.9
—
IF= 120A,TJ= 175°C
IGES
Gate-to-Emitter Leakage Current
—
—
±100
nA
VGE= ±20V
~~rr~~
~~ee~~
~~I (RD (ROD (OR~~||
|**Switching Characteristics@ TJ = 25°C(unless otherwise specified)**||
|**Parameter**
**Min.**
**Typ.**
**Max. Units**
**Conditions**
Qg
Total Gate Charge (turn-on)
—
250
375
nC
IC= 120A
Qge
Gate-to-Emitter Charge (turn-on)
—
65
98
VGE= 15V
Qgc
Gate-to-Collector Charge (turn-on)
—
100
150
VCC= 400V
Eon
Turn-On Switching Loss
—
5.7
6.7
mJ
Eoff
Turn-Off Switching Loss
—
4.2
5.2
Etotal
TotalSwitchingLoss
—
9.9
11.9
IC= 120A, VCC= 400V, VGE= 15V
~~————~~
~~ee ee ae a~~
~~ne~~
~~ee~~
~~—ae~~||
|td(on)
Turn-On delaytime
—
40
60
ns
RG= 4.7, L = 87µH, TJ= 25°C
tr
Rise time
—
125
155
Energy losses include tail & diode
td(off)
Turn-Off delaytime
—
140
170
reverse recovery
tf
Fall time
—
120
170
Eon
Turn-On Switching Loss
—
6.4
—
mJ
Eoff
Turn-Off Switching Loss
—
4.7
—
Etotal
Total Switching Loss
—
11.1
—
IC= 120A, VCC= 400V, VGE= 15V
td(on)
Turn-On delaytime
—
40
—
ns
RG= 4.7, L = 87µH, TJ= 175°C
tr
Rise time
—
110
—
Energy losses include tail & diode
td(off)
Turn-Off delay time
—
160
—
reverse recovery
tf
Fall time
—
125
—
Cies
Input Capacitance
—
7600
—
pF
VGE= 0V
Coes
Output Capacitance
—
510
—
VCC= 30V
Cres
Reverse Transfer Capacitance
—
230
—
f = 1.0Mhz
TJ= 175°C, IC= 480A
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
VCC= 480V, Vp ≤ 600V
Rg=4.7, VGE = +20V to 0V
SCSOA
Short Circuit Safe Operating Area
6
—
—
VCC= 400V, Vp ≤ 600V
Rg=5.0, VGE = +15V to 0V
Erec
ReverseRecoveryEnergy oftheDiode
—
1740
—
µJ
TJ= 175°C
trr
Diode Reverse Recovery Time
—
210
—
ns
VCC= 400V, IF= 120A
Irr
Peak Reverse RecoveryCurrent
—
45
—
A
VGE= 15V,Rg= 4.7,L = 87µH
µs
~~——~~
~~ee—————~~
~~esa~~
~~——————a~~
~~esen~~
~~po~~
~~pf ff~~
~~———————————~~||
|**Notes:**||
| VCC= 80% (VCES), VGE= 20V, L = 3.5µH, RG= 47tested in production ILM400A.||
- Pulse width limited by max. junction temperature.
- Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
- R is measured at TJ approximately 90°C.
- Calculated continuous current based on maximum allowable junction temperature. Package IGBT current limit is 195A. Package diode current limit is120A. Note that current limitations arising from heating of the device leads may occur.
2 V 2.4 ~~re~~ 2018-12-03
~~Cafineon~~
AUIRGPS4070D0 ~~LLL~~
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250
200
aw
150
CPN ET
100 PIN
50
EEEERS
0 Pe} ELEN
25 50 75 100 125 150 175
TC (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
1000
10µsec
100
100µsec
1msec
10
DC
1 me
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1 10 100 1000
VCE (V)
Fig. 3 - Forward SOA
TC = 25°C, TJ 175°C; VGE =15V
480
420 Tyr V V GEGE = 18V = 15V
VGE = 12V
360 V GE = 10V
300 otEO VGE = 8.0V
Fee =
240
180 A
120 7 a
60 fT
JSS
0
0 2 4 6 8 10
VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs
IC (A)
IC (A)
ICE (A)
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800
700
600 PASCEECE
500
400 PCPS
300 FECES
200
100 FECES
0 CCEEECENS
0 20 40 60 80 100 120 140 160 180
TC (°C)
Ptot (W)
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**Fig. 2** - Power Dissipation vs. Case Temperature
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1000
100
10
Samal
1
10 100 1000
VCE (V)
Fig. 4 - Reverse Bias SOA
TJ = 175°C; VGE = 20V
480
420 or V V GEGE = 18V = 15V
VGE = 12V
360 V GE = 10V
300 t=ah VGE = 8.0V
240 a
180 s/o
120 OTT
60 FEEEEET=
0 SORE
0 2 4 6 8 10
VCE (V)
IC (A)
ICE (A)
**----- End of picture text -----**
**Fig. 6** - Typ. IGBT Output Characteristics TJ = 25°C; tp = 20µs
3 ~~=~~
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AUIRGPS4070D0 ~~oe~~
## ~~Giro~~
**==> picture [199 x 193] intentionally omitted <==**
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480
VGE = 18V
420 V GE = 15V
VGE = 12V
360 V GE = 10V
300 AS VGE = 8.0V
any 74
240
Pear
7
180
120
60 p=|
0 ALT
0 2 4 6 8 10
VCE (V)
ICE (A)
**----- End of picture text -----**
**Fig. 7** - Typ. IGBT Output Characteristics TJ = 175°C; tp = 20µs
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10
8 lta
ICE = 60A
6 I CE = 120A
ICE = 195A
4 |l ll
2
2a
0 | TP
5 10 15 20
VGE (V)
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
10
ICE = 60A
8 I CE = 120A
ICE = 195A
6 a
4 ry
2 =
f_
0 [|
5 10 15 20
VGE (V)
Fig. 11 - Typical VCE vs. VGE
TJ = 175°C
VCE (V)
VCE (V)
**----- End of picture text -----**
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480
420
-40°C
360
25°C
PE 175°C
300 - Hf
240 a
// ae
180
120
a)ffZee
60
So
0
0.0 1.0 2.0 3.0 4.0 5.0
VF (V)
Fig. 8 - Typ. Diode Forward Characteristics
tp = 20µs
10
8 Lt
ICE = 60A
6 ICE = 120A
ICE = 195A
4 iaii
2
|
0 |TtWe
5 10 15 20
VGE (V)
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
480
420
TJ = -40°C
360 T J = 25°C
300 T J = 175°C a) ae
240
pf
180
120
I
60
s—
0 fe
4 6 8 10 12 14
VGE (V)
VCE (V)
ICE (A)
IF (A)
**----- End of picture text -----**
**Fig. 12** - Typ. Transfer Characteristics VCE = 50V; tp = 20µs
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AUIRGPS4070D0
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25
1000
20
tdOFFOFF
15
EON tFF
100
10
tRR
EOFF
5 tdONON
0
0 50 100 150 200 250 10
0 50 100 150 200
IC (A)
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC Fig. 14 - Typ. Switching Loss vs. IC
TJ = 175°C; L = 0.087mH; VCE = 400V, RG = 4.7; VGE = 15V TJ = 175°C; L = 0.087mH; VJ = 175°C; L = 0.087mH; V = 175°C; L = 0.087mH; VCE = 400V, RG = 4.7= 400V, RG = 4.7G = 4.7 = 4.7; VGE = 15V [ARE] CE = 400V, RG = 4.7= 400V, RG = 4.7G = 4.7 = 4.7; VGE = 15V
16 10000
14
12 E ON
10 1000 tdOFF
8
-| EOFF Ee tF
6
100 tR
Z| lee
4
tdON
2
0 10 Eannae
0 10 20 30 40 50 60 0 10 20 30 40 50 60
Rg () RG ()
Fig. 15 - Typ. Energy Loss vs. RG G Fig. 16 - Typ. Switching Time vs. RG
= 175°C; L = 0.087mH; VCE = 400V, ICE = 120A; VGE = 15V CE = 400V, ICE = 120A; VGE = 15V = 400V, ICE = 120A; VGE = 15V CE = 120A; VGE = 15V = 120A; VGE = 15V GE = 15V = 15V TJ = 175°C; L = 0.087mH; VCE = 400V, ICEJ = 175°C; L = 0.087mH; VCE = 400V, ICE = 175°C; L = 0.087mH; VCE = 400V, ICECE = 400V, ICE = 400V, ICECE = 120A; VGE = 15V
45 45
RG = 4.7
40 40
Ve}
35 R G = 35
t
30 30 ENE
RG = 20
25 25
P|] NEE
RG = 50
20 Ex 20 SEEee
0 50 100 150 200 250 0 10 20 30 40 50 60
IF (A) RG (
Energy (mJ)
Energy (mJ)
Swiching Time (ns)
Swiching Time (ns)
IRR (A) IRR (A)
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1000
tdOFFOFF
tFF
100
tRR
tdONON
10
0 50 100 150 200 250
IC (A)
Swiching Time (ns)
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**Fig. 14** - Typ. Switching Loss vs. IC TJ = 175°C; L = 0.087mH; VJ = 175°C; L = 0.087mH; V = 175°C; L = 0.087mH; VCE = 400V, RG = 4.7= 400V, RG = 4.7G = 4.7 = 4.7; VGE = 15V
**Fig. 15** - Typ. Energy Loss vs. RG G TJ = 175°C; L = 0.087mH; VCE = 400V, ICE = 120A; VGE = 15V CE = 400V, ICE = 120A; VGE = 15V = 400V, ICE = 120A; VGE = 15V CE = 120A; VGE = 15V = 120A; VGE = 15V GE = 15V = 15V
**Fig. 16** - Typ. Switching Time vs. RG TJ = 175°C; L = 0.087mH; VCE = 400V, ICEJ = 175°C; L = 0.087mH; VCE = 400V, ICE = 175°C; L = 0.087mH; VCE = 400V, ICECE = 400V, ICE = 400V, ICECE = 120A; VGE = 15V
**Fig. 17** - Typ. Diode IRR vs. IF TJ = 175°C
**Fig. 18** - Typ. Diode IRR vs. RG TJ = 175°C
5
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Gafineon
45
40
35
30
25
20
PEE
200 400 600 800
diF /dt (A/µs)
IRR (A)
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AUIRGPS4070D0
LLL
10000
9000
240A
8000 4.7
10
7000 pc
20
6000 50 120A
5000
60A
a
4000
3000
P| tt
300 400 \ 500 600 AA 700 800
diF /dt (A/µs)
QRR (nC)
**----- End of picture text -----**
**Fig. 19** - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 120A; TJ = 175°C
**Fig. 20** - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C
**==> picture [528 x 435] intentionally omitted <==**
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24 1200
3000
RG = 4.7 20 1000
2500
RG = 10 a Att Tt) Isc
RG = 20
2000 R G = 50 16 800
T
sc
pe 12 ENGEp 4s 600
1500
inaa PENSE
8 400
1000
ea [Aan
4 200
500
pt | 9 E4RREEE 10 11 12 13 14 15 16
50 100 150 200 250
VGE (V)
IF (A)
Fig. 21 - Typ. Diode ERR vs. IF Fig. 22 - VGE vs. Short Circuit Time
TJ = 175°C VCC = 400V; TC = 25°C
100000 16
VCES = 400V
Cies VCES = 300V
10000 12
Too «6g
1000 8
Ser} Coes
100 4
Saaee Cres Fanaal
10 Sinn 0 AREEEE
0 100 200 300 400 500 0 50 100 150 200 250 300
VCE (V) Q G, Total Gate Charge (nC)
Capacitance (pF)
VGE, Gate-to-Emitter Voltage (V)
Energy (µJ) Time (µs) Current (A)
**----- End of picture text -----**
**Fig. 23** - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz
**Fig. 24** - Typical Gate Charge vs. VGE ICE = 120A
6
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AUIRGPS4070D0
**==> picture [444 x 469] intentionally omitted <==**
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1
0.1 D = 0.50
0.20
°
0.10 Ri ( C/W) I (sec)
0.01 0.05 R1R1 R2R2 R3R3 R 4R4 0.00442 0.000014
0.02 J J C C 0.04530 0.000165
0.01 1 1 2 2 3 3 4 4 0.08912 0.004938
0.001 SINGLE PULSE — CiCi= =iRiiRi / 0.06121 0.026150
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1
TC
D = 0.50
0.1 0.20
Ph TMCTU
0.10
°
0.05 Ri ( C/W) I (sec)
0.01 0.02 R1 R1 R2 R2 R3 R3 R 4R 4 0.00948 0.000013
Tr 0.01 diese J J IN | |} C C 0.12750 0.000134
et rey 1 1 oo 2 2 3 3 4 4 0.18573 0.003167
0.001 eal Ci= Ci i =iRiiRi 0.12730 0.020010
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
( THERMAL RESPONSE )
2. Peak Tj = P dm x Zthjc + Tc
0.0001 Sime |
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
Thermal Response ( Z thJC )
Thermal Response ( Z thJC )
**----- End of picture text -----**
**Fig 26.** Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
7 V 2.4 ~~——_—__--~~
V 2.4 2018-12-03
~~Cinfineon~~
AUIRGPS4070D0 ~~_~~
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L
L
DUT VCC 80 V +
0
1K - DUT VCC
Rg
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Gate Charge Circuit
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RBSOA Circuit
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**Fig.C.T.1** - Gate Charge Circuit (turn-off)
**Fig.C.T.2** - RBSOA Circuit
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4X
DC VCC
DUT
RSH
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**Fig.C.T.3** - S.C. SOA Circuit
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R = [VCC]
ICM
VCC
DUT
Rg
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diode clamp /
DUT
L
>
-5V
DUT / VCC
DRIVER
;
Rg
Switching Loss
Fig.C.T.4 - Switching Loss Circuit
C force
100K
D1 22K
C sense
DUT
G force 0.0075µF
E sense
E force
**----- End of picture text -----**
**Fig.C.T.5** - Resistive Load Circuit
**Fig.C.T.6** - BVCES Filter Circuit
8
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AUIRGPS4070D0
EEE—<§ |
600 180
600 180
tf
tr
500 150
500 150
TEST CURRENT
400 120
400 120
300 a ieee 90 le 90% ICE
90% ICE 300 90
200 60
200 60
10% ICE 10%ICE
100 30
a 100 ne 30
10% VCE 10% VCE
0 0
0 0
| an NiE-
Eoff Loss
Eon Loss
-100 -30
-100 -30
0 0.5 1 1.5
0 0.5 1 1.5
time(µs)
time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4 @ TJ = 175°C using Fig. CT.4
140
500
— QRR
120
VCECE
a
100 400
80
tRR
300
fe
60 ICECE
40
200
20 eeeee
0 ee 100
-20 Peak
IRR
nye 0 0
-40 \
c e
-60
-0.40 0.10 0.60 1.10 -100
-4.00 0.00 4.00 8.00 12.00
time (µS)
(V) (A)
VCE ICE (V)VCE (A)ICE
(A)
IF
Vce (V)
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500 2000
VCECE
400 1600
300 1200
ICECE
200 800
100 400
0 0
-100 -400
-4.00 0.00 4.00 8.00 12.00
Time (uS)
Ice (A)
Vce (V)
**----- End of picture text -----**
**Fig. WF3** - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4
**Fig. WF4** - Typ. S.C. Waveform
@ TJ = 25°C using Fig. CT.3
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AUIRGPS4070D0 ~~_~~
## ~~Cinfineon~~
Case Outline and Dimensions-PG-TO274-3-903 (Dimensions are shown in millimeters (inches))
## PG-TO274-3-903 -Part Marking Information
**==> picture [371 x 147] intentionally omitted <==**
**----- Start of picture text -----**
Part Number AUGPS4070D0
Date Code
YWWA Y = Year
IR Logo 1 éaR WW = Work Week
A = Automotive, Lead Free
XX XX
|
Lot Code
**----- End of picture text -----**
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~~Cinfineon~~
AUIRGPS4070D0 ~~_~~
**Qualification Information**
Automotive (per AEC-Q101) **Qualification Level** This part number(s) passed Automotive qualification. Infineon’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. **Moisture Sensitivity Level** PG-TO274-3-903 N/A Class H3B(+/‐ 8000)[† ] Human Body Model AEC-Q101-001 **ESD** Class C3 (+/‐ 2000)[† ] Charged Device Model AEC-Q101-005 **RoHS Compliant** Yes ~~oe~~ † Highest passing voltage.
## **Revision History**
|**Revision**|**Date**|**Subjects(major changes since last revision)**|**Subjects(major changes since last revision)**|
|---|---|---|---|
|2.0|12/12/2016||Final Datasheet.|
|2.1|08/31/2017||Corrected typo error onpart marking.|
|2.2|11/14/2017||Updated with IFX nomenclature.|
|2.3|07/19/2018||Updated with minor changes.|
|2.4|12/03/2018||Updated withpackage outline.|
**Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.**
## **IMPORTANT NOTICE**
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com).
## **WARNINGS**
Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
11
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## Links
- [View this product on Novapart](https://novapart.co/products/AUIRGPS4070D0/igbt-240-a-17-v-750-w-600-to-274-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/auirgps4070d0/igbt-aec-q101-600v-240a-750w-to/dp/2986433)
---
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