# Power MOSFET, N Channel, 40 V, 55 A, 6950 µohm, DirectFET SC, Surface Mount

![Product image](https://novapart.co/image/farnell:2579958/)

**URL**: https://novapart.co/products/AUIRF7732S2TR/power-mosfet-n-channel-40-v-55-a-6950-ohm
**SKU**: AUIRF7732S2TR
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.0900
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0055ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 7Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | AEC-Q101 |
| Power Dissipation | 41W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | DirectFET SC |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 55A |
| Drain Source On State Resistance | 6950µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2579958/)

**AUTOMOTIVE GRADE** 

## ~~Cinfineon~~ 

## AUIRF7732S2TR ~~—~~ 

Automotive DirectFET[®] Power MOSFET  

- Advanced Process Technology 

 Optimized for Automotive Motor Drive, DC-DC and **V(BR)DSS 40V** other Heavy Load Applications **RDS(on)   typ. 5.5m**   Exceptionally Small Footprint and Low Profile **max. 6.95m**   High Power Density **I 55A**  Low Parasitic Parameters **D (Silicon Limited)**  Dual Sided Cooling **Qg (typical) 30nC**  175°C Operating Temperature  Repetitive Avalanche Capability for Robustness and Reliability  Lead free, RoHS and Halogen free S  Automotive Qualified * D G D S ~~aD~~ SC DirectFET[®] ISOMETRIC Applicable DirectFET[®] Outline and  Substrate Outline  **SB SC M2 M4 L4 L6 L8** ~~|TTTT~~ **Description** The AUIRF7732S2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve low gate charge as well as the lowest on-state resistance in a package that has the footprint which is 38% smaller than an SO-8 and only 0.7mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems. 

This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging platform coupled with the latest silicon technology allows the AUIRF7732S2 to offer substantial system level savings and performance improvement specifically in high frequency DC-DC, motor drive and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area . Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. 

|**Base Part Number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|AUIRF7732S2|DirectFET Small Can|Tape and Reel|4800|AUIRF7732S2TR|



## **Absolute Maximum Ratings** 

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.   These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS<br>~~ee~~|Drain-to-Source Voltage<br>~~ee~~|40<br>~~ee~~|V<br>~~ie~~|
|VGS<br>~~ee~~<br>~~—__—————————————~~|Gate-to-Source Voltage<br>~~ee~~<br>~~—__—————————————~~|±20<br>~~ee~~<br>~~—__—————————————~~<br>~~ie~~||
|ID @TC= 25°C<br>~~—__—————————————~~<br>~~————————~~|Continuous Drain Current,VGS @10V(Silicon Limited) <br>~~—__—————————————~~<br>~~————————~~|55<br>~~—__—————————————~~<br>~~————————~~<br>~~ie~~|A<br>~~————————~~<br>~~ie~~|
|ID @TC= 100°C<br>~~—__—————————————~~<br>~~————————~~|Continuous Drain Current,VGS @10V(Silicon Limited) <br>~~—__—————————————~~<br>~~————————~~|39<br>~~—__—————————————~~<br>~~————————~~<br>~~ie~~||
|ID @TA= 25°C<br>~~————————~~|Continuous Drain Current,VGS @10V(Silicon Limited) <br>~~————————~~|14<br>~~————————~~<br>~~ie~~||
|IDM<br>~~————————~~|Pulsed Drain Current<br>~~————————~~|220<br>~~————————~~<br>~~ie~~||
|PD @TC= 25°C<br>~~os~~|Power Dissipation<br>~~os~~|41<br>~~ie~~<br>~~os~~|W<br>~~ie~~<br>~~os~~|
|PD @TA= 25°C<br>~~os~~|Power Dissipation<br>~~os~~|2.5<br>~~os~~||
|EAS<br>~~—~~|Single Pulse Avalanche Energy (ThermallyLimited) <br>~~ee~~|45<br>~~ee~~|mJ<br>~~ee~~|
|EAS(Tested)<br>~~—~~|Single Pulse Avalanche Energy <br>~~ee~~|100<br>~~ee~~||
|IAR<br>~~—~~|Avalanche Current<br>~~—~~<br>~~a~~|See Fig. 16, 17, 18a, 18b<br>~~—~~<br>~~a~~|A<br>~~—~~<br>~~a~~|
|EAR<br>~~—~~|Repetitive Avalanche Energy <br>~~—~~<br>~~a~~||mJ<br>~~—~~<br>~~a~~|
|TP<br>~~a~~|Peak SolderingTemperature<br>~~a~~|270<br>~~a~~|°C<br>~~a~~|
|TJ<br>TSTG<br>~~a~~|Operating Junction and<br>Storage Temperature Range<br>~~a~~|-55  to + 175<br>~~a~~||



1 

2015-12-14 

AUIRF7732S2TR ~~LLL~~ 

## ~~Cinfin eon~~ 

## **Thermal Resistance** 

|**Thermal Resistance**||
|---|---|
|**Symbol**<br>**Parameter**<br>**Typ. **<br>**Max.**<br>**Units**||
|RJA<br>Junction-to-Ambient<br>–––<br>60||
|RJA<br>Junction-to-Ambient<br>12.5<br>–––||
|RJA<br>Junction-to-Ambient<br>20<br>–––<br>°C/W||
|RJ-Can<br>Junction-to-Can<br>–––<br>3.7||
|RJ-PCB<br>Junction-to-PCB Mounted<br>1.0<br>–––||
|Linear DeratingFactor<br>0.27<br>W/°C||
|**Static Electrical Characteristics@ TJ = 25°C(unless otherwise specified) **||
|**Symbol**<br>**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br>**Conditions**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>40<br>–––<br>–––<br>V<br>VGS= 0V, ID= 250µA<br>V(BR)DSS/TJBreakdown Voltage Temp. Coefficient<br>–––<br>0.03<br>–––<br>V/°C Reference to 25°C, ID= 1.0mA<br>RDS(on) <br>Static Drain-to-Source On-Resistance<br>–––<br>5.5<br>6.95<br>m VGS= 10V, ID= 33A<br>VGS(th)<br>Gate Threshold Voltage<br>2.0<br>–––<br>4.0<br>V<br>VDS= VGS, ID= 50µA<br>VGS(th)/TJ<br>Gate Threshold Voltage Coefficient<br>–––<br>-8.1<br>––– mV/°C<br>gfs<br>Forward Transconductance<br>52<br>–––<br>–––<br>S<br>VDS= 10V, ID= 33A<br>RG<br>Internal Gate Resistance<br>–––<br>0.7<br>–––<br><br>~~a~~<br>~~nD I (OE(OO~~<br>~~—_—es~~<br>~~a ee~~<br>~~a~~||
|IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>5.0<br>µA<br>VDS= 40V, VGS= 0V<br>–––<br>–––<br>250<br>VDS= 40V, VGS= 0V, TJ= 125°C<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>nA<br>VGS= 20V<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>VGS= -20V<br>**Dynamic Electrical Characteristics@ TJ = 25°C(unless otherwise specified) **<br>~~SS~~<br>~~FE~~<br>~~—~~||
|**Symbol**<br>**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br>**Conditions**<br>Qg<br>Total Gate Charge<br>–––<br>30<br>45<br>VDS= 20V<br>Qgs1<br>Gate-to-Source Charge<br>–––<br>5.1<br>–––<br>VGS= 10V<br>Qgs2<br>Gate-to-Source Charge<br>–––<br>2.8<br>–––<br>ID= 33A<br>Qgd<br>Gate-to-Drain("Miller")Charge<br>–––<br>9.7<br>–––<br>See Fig. 11<br>Qgodr<br>Gate Charge Overdrive<br>–––<br>12<br>–––<br>nC<br>~~ee~~<br>~~ts I I (OR  (~~<br>~~ee~~<br>~~Gt~~<br>~~es~~<br>~~———~~||
|Qsw<br>Switch Charge(Qgs2+ Qgd)<br>–––<br>12.5<br>–––<br>Qoss<br>Output Charge<br>–––<br>16<br>–––<br>nC<br>VDS= 16V, VGS= 0V<br>~~—~~||
|td(on)<br>Turn-On DelayTime<br>–––<br>9.6<br>–––<br>ns<br>VDD= 20V<br>tr<br>Rise Time<br>–––<br>25<br>–––<br>ID= 33A<br>td(off)<br>Turn-Off DelayTime<br>–––<br>24<br>–––<br>RG= 6.8<br>tf<br>Fall Time<br>–––<br>22<br>–––<br>VGS= 4.5V<br>Ciss<br>Input Capacitance<br>–––<br>1700<br>–––<br>pF<br>VGS= 0V<br>Coss<br>Output Capacitance<br>–––<br>405<br>–––<br>VDS= 25V<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>200<br>–––<br>ƒ= 1.0 MHz<br>Coss<br>Output Capacitance<br>–––<br>1460<br>–––<br>VGS= 0V, VDS= 1.0V,ƒ= 1.0 MHz<br>Coss<br>Output Capacitance<br>–––<br>360<br>–––<br>VGS= 0V, VDS= 32V,ƒ= 1.0 MHz<br>Cosseff.<br>Effective Output Capacitance<br>–––<br>540<br>–––<br>VGS= 0V, VDS= 0V to 32V<br>~~—~~<br>~~———~~<br>~~eeensne eee~~<br>~~ee~~<br>~~Pe~~<br>~~rr~~||
|Notesthroughare on page 3||
|2<br>2015-12-14<br>~~re~~||



|<br>AUIRF7732S2TR<br>~~eesor~~|<br>AUIRF7732S2TR<br>~~eesor~~|<br>AUIRF7732S2TR<br>~~eesor~~|<br>AUIRF7732S2TR<br>~~eesor~~|<br>AUIRF7732S2TR<br>~~eesor~~|<br>AUIRF7732S2TR<br>~~eesor~~|<br>AUIRF7732S2TR<br>~~eesor~~|<br>AUIRF7732S2TR<br>~~eesor~~|
|---|---|---|---|---|---|---|---|
|**Diode Characteristics**||||||||
|**Symbol**<br>~~a~~|**Parameter**|**Min.**|**Typ. Max. Units**|**. Max. Units**|**. Max. Units**|**Conditions**|**Conditions**|
|IS<br>ISM|Continuous Source Current<br>(BodyDiode)<br>Pulsed Source Current<br>(BodyDiode) |–––   –––<br>–––   –––|–––   –––<br>–––   –––|55<br>220|A|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.|D<br>S<br>G|
|VSD|Diode Forward Voltage|–––|–––|1.3|V|TJ= 25°C,IS= 33A,VGS= 0V|= 0V|
|trr|Reverse RecoveryTime|–––|33|50|ns|TJ= 25°C, IF= 33A, VDD= 20V|= 20V|
|Qrr|Reverse RecoveryCharge|–––|22|33|nC|dv/dt = 100A/µs||



-  Surface mounted on 1 in. square Cu board  (still air). 

 Mounted to a PCB with small clip heatsink (still air) 

 Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air). 

-  Click on this section to link to the appropriate technical paper. 

-  Click on this section to link to the DirectFET[®] Website. 

-  Surface mounted on 1 in. square Cu board, steady state. 

-  TC measured with thermocouple mounted to top (Drain) of part. 

-  Repetitive rating;  pulse width limited by max. junction temperature. 

-  Starting TJ = 25°C, L = 0.083mH, RG = 50, IAS = 33A.Vgs = 20V. 

-  Pulse width  400µs; duty cycle  2%. 

-  Used double sided cooling, mounting pad with large heatsink. 

-  Mounted on minimum footprint full size board with metalized back and with small clip heat sink. 

-  R is measured at TJ of approximately 90°C. 

3 2015-12-14 ~~me~~ 

~~Cinfineon~~ 

AUIRF7732S2TR ~~TL~~ 

**==> picture [493 x 668] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>100 8.0V 8.0V<br>6.0V 6.0V<br>5.0V 5.0V<br>4.5V4.0V 100 4.5V 4.0V<br>10 BOTTOM 3.5V BOTTOM 3.5V<br>1<br>10<br>0.1 3.5V<br>3.5V<br>60µs PULSE WIDTH<br>60µs PULSE WIDTH<br>Tj = 25°C<br>0.01 1 fo Tj = 175°C<br>0.1 1 10 100 1000 0.1 1 10 100 1000<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig. 1  Typical Output Characteristics  Fig. 2  Typical Output Characteristics<br>18 16<br>16 ID = 33A Vgs = 10V<br>14<br>PTT TT “TTT LLY<br>14<br>12<br>12<br>°<br>10 PREECE TJ = 125 ° C 10 T J  = 125 C<br>8 HAE 8 ELT<br>6 PP NEE 6 [|ET<br>4 T J  = 25°C 4 T J  = 25°C<br>2 ees I<br>2<br>0 | | PEE  EEE<br>4 pLitiii 5 6 7 8 9 10 11 12 0 EET<br>0 20 40 60 80 100 120 140 160 180 200<br>VGS, Gate -to -Source Voltage  (V) ID, Drain Current (A)<br>Fig. 3  Typical On-Resistance vs. Gate Voltage Fig. 4  Typical On-Resistance vs. Drain Current<br>1000 2.0<br>ID = 33A<br>V GS  = 10V<br>100 T J  = -40°C<br>TJ = 25°C 1.5<br>TJ = 175°C<br>10 TOESf<br>1.0<br>1 EG/GGGE<br>VDS = 25V<br>60µs PULSE WIDTH<br>0.1 A<br>0.5<br>1 2 3 4 5 6 7 8<br>-60 -40 -20 0 20 40 60 80 100 120 140160 180<br>VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)<br>)<br>RDS(on),  Drain-to -Source On Resistance (m<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>)<br> m<br>RDS(on),  Drain-to -Source On Resistance (<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig. 4** Typical On-Resistance vs. Drain Current 

**Fig. 3** Typical On-Resistance vs. Gate Voltage 

**Fig 5.** Transfer Characteristics 

**Fig 6.** Normalized On-Resistance vs. Temperature 

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AUIRF7732S2TR ~~Tes~~ 

## ~~Cinfineon~~ 

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4.0<br>3.5<br>3.0 Poe<br>2.5<br>ID = 50µA<br>ID = 250µA<br>2.0<br>ID = 1.0mA<br>ID = 1.0A<br>1.5<br>iTitiLENS<br>1.0<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig. 7** Typical Threshold Voltage vs. Junction Temperature 

**==> picture [210 x 200] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>80 T J  = 25°C<br>To<br>60<br>AL<br>TJ = 175°C<br>40<br>20<br>VDS = 5.0V<br>380µs PULSE WIDTH<br>foo<br>0<br>0 20 40 60 80 100<br>ID,Drain-to-Source Current (A)<br>Gfs, Forward Transconductance (S)<br>**----- End of picture text -----**<br>


**Fig 9.** Typical Forward Trans conductance vs. Drain Current 

**==> picture [207 x 202] intentionally omitted <==**

**----- Start of picture text -----**<br>
14.0<br>ID= 33A<br>12.0<br>[Ty VDS= 32V<br>VDS= 20V<br>10.0<br>VDS= 8.0V<br>8.0 caam=/4<br>Sane /4n<br>6.0<br>a<br>4.0<br>Venaeeee<br>2.0<br>7A<br>0.0<br>0 5 10 15 20 25 30 35 40<br> QG,  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1000<br>100 ||) te<br>TJ = -40°C<br>TJ = 25 ° C<br>TJ = 175 ° C<br>10<br>V GS  = 0V<br>1.0 ria<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Typical Source-Drain Diode Forward Voltage 

**==> picture [210 x 431] intentionally omitted <==**

**----- Start of picture text -----**<br>
10000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss    = C gs + Cgd,  C ds  SHORTED<br>C rss    = C gd<br>Coss   = Cds + Cgd<br>Ciss<br>«[L.,<br>1000 Ooi Coss<br>C rss<br>100<br>- Lt<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 10.   Typical Capacitance vs. Drain-to-Source Voltage<br>60<br>50<br>NTT TTT<br>40<br>PSCC<br>CENCE<br>30<br>PETTING<br>20<br>10<br>0 PTT TT<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 10.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 12.** Maximum Drain Current vs. Case Temperature 

**Fig 11.** Typical Gate Charge vs. Gate-to-Source Voltage 5 ~~= °°~~ 

2015-12-14 ~~OT~~ 

AUIRF7732S2TR ~~|~~ 

## ~~Cinfineon~~ 

**==> picture [488 x 198] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 200<br>OPERATION IN THIS AREA  ID<br>LIMITED BY R DS(on) TOP         6.4A<br>160 17A<br>100 BOTTOM 33A<br>1msec<br>100µsec<br>120<br>aaeo NOELLE<br>10<br> nwSvs ao ne INTE \<br>80<br>DC 10 msec<br>1<br>Tc = 25°C 40<br>Tj = 175°C<br>Single Pulse<br>0.1 ote 0 CPE SS.<br>0.1 1 10 100 25 50 75 100 125 150 175<br>VDS  , Drain-toSource Voltage (V) Starting TJ , Junction Temperature (°C)<br>ID,  Drain-to-Source Current (A)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


## **Fig 13.** Maximum Safe Operating Area 

**Fig 14.** Maximum Avalanche Energy vs. Temperature 

**==> picture [433 x 433] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>D = 0.50 WO a<br>1<br>0.20<br>Ea toc eer TM |<br>ot oe<br>0.10<br>0.05<br>0.1 err— 0.02 ear ll<br>0.01<br>0.01<br>SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 15.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>1000<br>Duty Cycle = Single Pulse<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  Tj  = 150°C and<br>100<br>Tstart =25°C (Single Pulse)<br>0.01<br>10 aeey  KOEll<br>0.05 0.10 CHTSSSSS | | Suilll<br>1 te7ooo SS|| aanTTes<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming   j = 25°C and<br>Tstart = 150°C.<br>PA rt<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Avalanche Current (A)<br>Thermal Response ( Z  thJC ) °C/W<br>**----- End of picture text -----**<br>


**Fig 16.** Typical Avalanche Current vs. Pulse Width 

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**==> picture [204 x 196] intentionally omitted <==**

**----- Start of picture text -----**<br>
50<br>TOP          Single Pulse<br>45 | | | |<br>BOTTOM   1.0% Duty Cycle<br>40 ID = 33A<br>Nae |<br>35<br>PINT<br>30 TET ET ty<br>25<br>NONEE<br>20 BNEANEEEEEEE<br>15<br>BEXURNEREEEE<br>10 PLTPOPPININEEET<br>5<br>0 ptt ETPNEESNST| | PRES<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


## **Notes on Repetitive Avalanche Curves , Figures 16, 17:** 

**(For further info, see AN-1005 at www.infineon.com)** 

1. Avalanche failures assumption: 

   - Purely a thermal phenomenon and failure occurs at a temperature far in 

   - excess of Tjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 

3.  Equation below based on circuit and waveforms shown in Figures 18a, 18b. 

4.  PD (ave) = Average power dissipation per single avalanche pulse. 

5.  BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

6.  Iav = Allowable avalanche current. 

7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 16, 17). 

   - tav = Average time in avalanche. 

   - D = Duty cycle in avalanche =  tav ·f 

   - ZthJC(D, tav) = Transient thermal resistance, see Figures 15) 

**==> picture [129 x 32] intentionally omitted <==**

**----- Start of picture text -----**<br>
PD (ave) = 1/2 ( 1.3·BV·Iav) =   T/ ZthJC<br>Iav = 2  T/ [1.3·BV·Zth]<br>EAS (AR) = PD (ave)·tav<br>**----- End of picture text -----**<br>


**Fig 17.** Maximum Avalanche Energy vs. Temperature 

**Fig 18a.** Unclamped Inductive Test Circuit 

**Fig 18b.** Unclamped Inductive Waveforms 

**==> picture [22 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD<br>**----- End of picture text -----**<br>


**Fig 19a.** Gate Charge Test Circuit 

**Fig 19b.** Gate Charge Waveform 

**Fig 20a.** Switching Time Test Circuit 

**Fig 20b.** Switching Time Waveforms 

2015-12-14 

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AUIRF7732S2TR ~~LLL~~ 

## **DirectFET[®] Board Footprint, SC (Small Size Can).** 

Please see DirectFET **[®]** application note AN-1035 for all details regarding the assembly of DirectFET **[®]** . This includes all recommendations for stencil and  substrate designs. 

**==> picture [281 x 200] intentionally omitted <==**

**----- Start of picture text -----**<br>
G=GATE<br>D=DRAIN<br>S=SOURCE<br>D D<br>S<br>i<br>G '<br>'<br>S<br>D D<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

8 

2015-12-14 

Cinfineon 

AUIRF7732S2TR 

## **DirectFET[®] Outline Dimension, SC Outline (Small Size Can).** 

Please see DirectFET **[®]** application note AN-1035 for all details regarding the assembly of DirectFET **[®]** . This includes all recommendations for stencil and  substrate designs. 

|DIMENSIONS|DIMENSIONS|DIMENSIONS|DIMENSIONS|DIMENSIONS|
|---|---|---|---|---|
||METRIC||IMPERIAL||
|CODE|MIN|MAX|MIN|MAX|
|A|4.75|4.85|0.187|0.191|
|B|3.70|3.95|0.146|0.156|
|C|2.75|2.85|0.108|0.112|
|D|0.35|0.45|0.014|0.018|
|E|0.58|0.62|0.023|0.024|
|F|0.78|0.82|0.031|0.032|
|F<br>G|0.78<br>0.75|0.82<br>0.80|0.031<br>0.030|0.032<br>0.031|
|H|0.63|0.67|0.025|0.026|
|J|0.38|0.42|0.015|0.016|
|K|0.95|1.05|0.037|0.041|
|L|2.15|2.25|0.085|0.088|
|M<br>P|0.68<br>0.08|0.74<br>0.17|0.027<br>0.003|0.029<br>0.007|
|R<br>P|0.02<br>0.08|0.08<br>0.17|0.003<br>0.001|0.003<br>0.007|



## **DirectFET[® ] Part Marking** 

**==> picture [174 x 157] intentionally omitted <==**

**----- Start of picture text -----**<br>
"AU" = GATE AND<br>AUTOMOTIVE MARKING<br>LOGO<br>PART NUMBER<br>BATCH NUMBER<br>DATE CODE<br>Line above the last character of<br>the date code indicates "Lead-Free"<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

9 

2015-12-14 

~~Cinfineon~~ 

AUIRF7732S2TR ~~|~~ 

## **DirectFET[® ] Tape & Reel Dimension (Showing component orientation)** 

## LOADED TAPE FEED DIRECTION 

**==> picture [466 x 261] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||||||||
|---|---|---|---|---|---|---|---|---|
|F|D|
|B|A|
|i|f|a|-|Lo|e|-|H|
|,|I|
|i|
|!!|rY|
|ae|||
|!|'|
|G|
|i|
|i|
|!|
|E|G|
|H|
|DIMENSIONS|
|Std reel quantity is 4800 parts, ordered as AUIRF7732S2TR.|NOTE: CONTROLLING|METRIC|IMPERIAL|
|CODE|MIN|MAX|MIN|MAX|
|DIMENSIONS IN MM|
|REEL DIMENSIONS|A|7.90|8.10|0.311|0.319|
|STANDARD OPTION|(QTY 4800)|B|3.90|4.10|0.154|0.161|
|METRIC|IMPERIAL|C|11.90|12.30|0.469|0.484|
|MIN|MAX|MIN|MAX|D|5.45|5.55|0.215|0.219|
|330.0|N.C|12.992|N.C|
|E|4.00|4.20|0.158|0.165|
|20.2|N.C|0.795|N.C|
|F|5.00|5.20|0.197|0.205|
|12.8|13.2|0.504|0.520|
|1.5|N.C|0.059|N.C|G|1.50|N.C|0.059|N.C|
|H|1.50|1.60|0.059|0.063|

**----- End of picture text -----**<br>


NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts, ordered as AUIRF7732S2TR. 

**==> picture [116 x 100] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||||
|---|---|---|---|---|
|REEL DIMENSIONS|
|STANDARD OPTION|(QTY 4800)|
|METRIC|IMPERIAL|
|CODE|MIN|MAX|MIN|MAX|
|A|330.0|N.C|12.992|N.C|
|B|20.2|N.C|0.795|N.C|
|C|12.8|13.2|0.504|0.520|
|D|1.5|N.C|0.059|N.C|
|E|100.0|N.C|3.937|N.C|
|F|N.C|18.4|N.C|0.724|
|G|12.4|14.4|0.488|0.567|
|H|11.9|15.4|0.469|0.606|

**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

10 

2015-12-14 

AUIRF7732S2TR ~~Cinfineon LLL~~ **Qualification Information** Automotive (per AEC-Q101) **Qualification Level** Comments: This part number(s) passed Automotive qualification. Infineon’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. **Moisture Sensitivity Level** DFET2 Small Can MSL1 Class M2 (+/- 200V)[†] Machine Model AEC-Q101-002 Class H1B (+/- 1000V)[†  ] **ESD** Human Body Model AEC-Q101-001 N/A Charged Device Model AEC-Q101-005 **RoHS Compliant** Yes ~~——~~ †  Highest passing voltage. **Revision History Date Comments**  Updated datasheet with corporate template 12/14/2015  Corrected ordering table on page 1.  Updated Tape and Reel option on page 10 

**Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.** 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

11 

2015-12-14 



## Links

- [View this product on Novapart](https://novapart.co/products/AUIRF7732S2TR/power-mosfet-n-channel-40-v-55-a-6950-ohm)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/auirf7732s2tr/mosfet-auto-n-ch-40v-directfetsc/dp/2579958)
---

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