# Power MOSFET, N Channel, 100 V, 36 A, 0.0265 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:1864534/)

**URL**: https://novapart.co/products/AUIRF540Z/power-mosfet-n-channel-100-v-36-a-00265-ohm-to
**SKU**: AUIRF540Z
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.8100
**Stock**: 25+
**Lead Time**: 358 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.021ohm; Rds; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (23-Jan-2024) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 92W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 36A |
| Drain Source On State Resistance | 0.0265ohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1864534/)

## Cinfin eon 

AUIRF540Z **AUTOMOTIVE GRADE** Cinfin eon AUIRF540ZS ~~po~~ **Features VDSS 100V** ,  Advanced Process Technology **RDS(on)   typ. 21m**   Ultra Low On-Resistance  175°C Operating Temperature **max. 26.5m**   Fast Switching  Repetitive Avalanche Allowed up to Tjmax **ID 36A** ~~=~~  Lead-Free, RoHS Compliant  Automotive Qualified * D **Description** Specifically designed for Automotive applications, this D S S G HEXFET® Power MOSFET utilizes the latest processing G techniques to achieve extremely low on-resistance per silicon TO-220AB D[2] Pak area. Additional features of this design are a 175°C junction AUIRF540Z AUIRF540ZS operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make **G D S** this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications. ~~EJ~~ Gate Drain Source **Standard Pack Base part number Package Type Orderable Part Number Form Quantity** AUIRF540Z TO-220 Tube 50 AUIRF540Z Tube 50 AUIRF540ZS AUIRF540ZS D[2] -Pak Tape and Reel Left 800 AUIRF540ZSTRL 

## **Absolute Maximum Ratings** 

|Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.   These are stress|
|---|
|ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not|
|implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance|
|and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless|
|otherwise specified.|
|**Symbol**<br>**Parameter**<br>**Max.**<br>**Units**<br>ID@ TC= 25°C<br>Continuous Drain Current, VGS@ 10V (Silicon Limited)<br>36<br>A<br>ID @TC= 100°C<br>Continuous Drain Current,VGS @10V(Silicon Limited)<br>25<br>IDM<br>Pulsed Drain Current<br>140<br>PD@TC= 25°C<br>Maximum Power Dissipation<br>92<br>W<br>Linear Derating Factor<br>0.61<br>W/°C<br>VGS<br>Gate-to-SourceVoltage<br>± 20<br>V<br>EAS<br>Single Pulse Avalanche Energy (ThermallyLimited) <br>83<br>mJ<br>EAS(tested)<br>Single Pulse Avalanche EnergyTested Value<br>120<br>IAR<br>Avalanche Current<br>See Fig.15,16, 12a, 12b<br>A<br>EAR<br>Repetitive Avalanche Energy <br>mJ<br>TJ<br>Operating Junction and<br>-55  to + 175<br>TSTG<br>Storage Temperature Range<br>°C<br>SolderingTemperature,for 10 seconds(1.6mm from case)<br>300<br>Mountingtorque,6-32 or M3 screw<br>10 lbf•in(1.1N•m)<br> <br>~~————————~~<br>~~ae~~<br>~~=SSS5~~<br>~~se~~|
|**Thermal Resistance**|
|**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**|
|RJC<br>Junction-to-Case<br>–––<br>1.64|
|°C/W<br>RCS<br>Case-to-Sink, Flat, Greased Surface<br>0.50<br>–––<br>RJA<br>Junction-to-Ambient<br>–––<br>62|
|RJA<br>Junction-to-Ambient(PCB Mount,steadystate) <br>40|



HEXFET® is a registered trademark of Infineon. 

***** Qualification standards can be found at www.infineon.com 

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AUIRF540Z/S ~~LL~~ 

**Static @ TJ = 25°C (unless otherwise specified)** 

|Qg<br>~~es~~|Total Gate Charge<br>~~es~~|–––<br>~~es~~|42<br>~~es~~|63<br>~~es~~|nC|ID= 22A<br>VDS= 80V<br>VGS= 10V|
|---|---|---|---|---|---|---|
|g<br>Qgs<br>~~es~~<br>~~Rs~~|Gate-to-Source Charge<br>~~es~~|–––<br>~~es~~|9.7<br>~~es~~|–––<br>~~es~~|||
|Qgd<br>~~Rs~~<br>~~es~~|Gate-to-Drain Charge|–––|15|–––|||
|gd<br>td(on)<br>~~Rs~~<br>~~es~~|Turn-On Delay Time|–––|15|–––|ns<br>~~+++,~~]|VDD= 50V<br>ID= 22A<br>RG= 12<br>VGS= 10V<br>~~ee~~|
|d(on)<br>tr<br>~~es~~<br>~~es~~|Rise Time|–––|51|–––|||
|td(off)<br>~~es~~<br>~~es~~|Turn-Off DelayTime<br>|–––<br>|43<br>|–––<br>|||
|d(off)<br>tf<br>~~es~~<br>~~es+++,~~|Fall Time<br>~~+++,~~|–––<br>~~+++,~~|39<br>~~+++,~~|–––<br>~~+++,~~|||
|LD<br>~~es+++,~~|Internal Drain Inductance<br>~~+++,~~|–––<br>~~+++,~~|4.5<br>~~+++,~~|–––<br>~~+++,~~|nH<br>~~+++,~~]|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>~~ee~~|
|LS<br>~~+++,~~|Internal Source Inductance<br>~~+++,~~|–––<br>~~+++,~~|7.5<br>~~+++,~~|–––<br>~~+++,~~|||
|Ciss<br>~~+++,~~<br>~~esnner~~|Input Capacitance<br>~~+++,~~<br>~~nner~~|–––<br>~~+++,~~<br>~~nner~~|1770<br>~~+++,~~<br>~~nner~~|–––<br>~~+++,~~<br>~~nner~~|pF<br>~~+++,~~ ]<br>~~nner~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz,See Fig. 5<br>~~ee~~<br>~~PO~~|
|Coss<br>~~+++,~~<br>~~esnner~~|OutputCapacitance<br>~~+++,~~<br>~~nner~~|–––<br>~~+++,~~<br>~~nner~~|180<br>~~+++,~~<br>~~nner~~|–––<br>~~+++,~~<br>~~nner~~|||
|Crss<br>~~+++,~~<br>~~esnner~~<br>~~es~~|ReverseTransferCapacitance<br>~~+++,~~<br>~~nner~~|–––<br>~~+++,~~<br>~~nner~~|100<br>~~+++,~~<br>~~nner~~|–––<br>~~+++,~~<br>~~nner~~|||
|Coss<br>~~nner~~<br>~~es~~<br>~~es~~|OutputCapacitance<br>~~nner~~|–––<br>~~nner~~|730<br>~~nner~~|–––<br>~~nner~~||VGS=0V,VDS= 1.0Vƒ= 1.0MHz<br>~~PO~~<br>~~Po~~|
|Coss<br>~~nner~~<br>~~es~~<br>~~es~~<br>~~es~~|Output Capacitance<br>~~nner~~|–––<br>~~nner~~|110<br>~~nner~~|–––<br>~~nner~~||VGS=0V,VDS=80Vƒ= 1.0MHz<br>~~PO~~<br>~~Po~~<br>~~PO~~|
|Coss eff.<br>~~nner~~<br>~~es~~<br>~~es~~|Effective Output Capacitance<br>~~nner~~|–––<br>~~nner~~|170<br>~~nner~~|–––<br>~~nner~~||VGS= 0V,VDS= 0V to 80V<br>~~Po~~<br>~~PO~~|
|**Diode Characteristics**<br>~~nner~~<br>~~es~~<br>~~PO~~<br>~~po~~|||||||
|~~po{1}~~|**Parameter **<br>~~{1}~~|**Min.**<br>~~{1}~~|**Typ. M**<br>~~{1}~~|**. Max.**<br>~~{1}~~|**Units**<br>~~)~~|**Conditions**<br>~~gy~~|
|IS<br>~~po{1}~~|Continuous Source Current<br>(Body Diode)<br>~~{1}~~|–––<br>~~{1}~~|–––<br>~~{1}~~|36<br>~~{1}~~|A<br>~~)~~<br>~~es~~<br>~~QO~~<br>|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>~~gy~~<br>~~es~~<br>|
|ISM<br>~~{1}~~<br>~~es~~<br>~~Cee~~|Pulsed Source Current<br>(Body Diode)<br>~~{1}~~<br>~~es~~<br>|–––<br>~~{1}~~<br>~~es~~<br>~~I~~<br>|–––<br>~~{1}~~<br>~~es~~<br>~~Us~~<br>|140<br>~~{1}~~<br>~~es~~<br>~~Us~~<br>|||
|VSD<br>~~{1}~~<br>~~es~~<br>~~Cee~~|Diode Forward Voltage<br>~~{1}~~<br>~~es~~<br>|–––<br>~~{1}~~<br>~~es~~<br>~~I~~<br>|–––<br>~~{1}~~<br>~~es~~<br>~~Us~~<br>|1.3<br>~~{1}~~<br>~~es~~<br>~~Us~~<br>|V<br>~~)~~<br>~~es~~<br>~~QO~~<br>|TJ =25°C,IS=22A,VGS =0V<br>~~gy~~<br>~~es~~<br>|
|trr<br>~~es~~<br>~~Cee~~<br>~~es~~|Reverse Recovery Time<br>~~es~~<br>~~ee~~<br>|–––<br>~~es~~<br>~~I~~<br>~~ee~~<br>|33<br>~~es~~<br>~~Us~~<br>~~ee~~<br>|50<br>~~es~~<br>~~Us~~<br>~~ee~~<br>|ns<br>~~es~~<br>~~QO~~<br>~~ee~~<br>|TJ= 25°C ,IF= 22A, VDD= 50V<br>nC   di/dt = 100A/µs<br>~~es~~<br>~~ee~~<br>|
|Qrr<br>~~Cee~~<br>~~es~~|Reverse RecoveryCharge<br>~~ee~~<br>|–––<br>~~I~~<br>~~ee~~<br>|41<br>~~Us~~<br>~~ee~~<br>|62<br>~~Us~~<br>~~ee~~<br>|nC   di/dt = 100A/<br>~~QO~~<br>~~ee~~<br>||
|ton<br>~~Cee ~~<br>~~es~~|Forward Turn-On Time<br> ~~ee~~<br>~~Df~~|Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>~~I UsQO~~<br>~~ee~~<br>~~Df~~|||||



 Limited by TJmax , starting TJ = 25°C, L = 0.46mH, RG = 25, IAS = 20A, VGS =10V. Part not recommended for use above this value. 

-  Pulse width 1.0ms; duty cycle  2%. 

-  Coss eff.  is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

 Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. 

  This value determined from sample failure population, TJ = 25°C, L = 0.46mH, RG = 25, IAS = 20A, VGS =10V. 

-  This is only applied to TO-220AB package. 

-  This is applied to D[2] Pak When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 

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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>7.0V<br>6.0V<br>5.5V<br>100<br>5.0V<br>BOTTOM 4.5V<br>10 ee<br>4.5V<br>60µs PULSE WIDTH<br>Tj = 25°C<br>1<br>Ce ree<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig. 1** Typical Output Characteristics 

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1000<br>100<br>T = 175°C<br>J<br>iy<br>10<br>wail<br>T = 25°C<br>/ J<br>V DS  = 25V<br>60µs PULSE WIDTH<br>1<br>E4ueee<br>4.0 5.0 6.0 7.0<br>VGS, Gate-to-Source Voltage (V)<br>)<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig. 3** Typical Transfer Characteristics 

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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>7.0V<br>6.0V<br>5.5V<br>100<br>5.0V<br>BOTTOM 4.5V<br>4.5V<br>10 | ae<br>60µs PULSE WIDTH<br>Tj = 175°C<br>1 ZellMat<br>0.10 11 1010 100100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig. 2** Typical Output Characteristics 

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80<br>TJ = 175°C<br>60<br>fee<br>40<br>TJ = 25°C<br>ann<br>20<br>VDS = 10V<br>380µs PULSE WIDTH<br>0<br>Yo<br>0 10 20 30 40 50<br>ID, Drain-to-Source Current (A)<br>Gfs, Forward Transconductance (S)<br>**----- End of picture text -----**<br>


**Fig. 4** Typical Forward Transconductance vs. Drain Current 

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## ~~Cinfin eon~~ 

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3000 20<br>VGS   = 0V,       f = 1 MHZ I = 22A<br>D<br>Ciss    = Cgs  + Cgd,  Cds  SHORTED<br>2500 Crss    = Cgd  VDS= 80V<br>Coss   = Cds  + Cgd 16 VDS= 50V<br>VDS= 20V<br>2000 es Ss<br>Ciss<br>Tt FS<br>12<br>1500 Staion Ye<br>8<br>1000<br>ont fo<br>4<br>500 Coss<br>FOR TEST CIRCUIT<br>Crss SEE FIGURE 13<br>0 = s=t 0 ZLpF Ef<br>1 10 100 0 10 20 30 40 50 60<br>VDS, Drain-to-Source Voltage (V)  QG  Total Gate Charge (nC)<br>Fig 5.  Typical Capacitance vs.   Fig 6.  Typical Gate Charge vs.<br>      Drain-to-Source Voltage       Gate-to-Source Voltage<br>1000.0 1000<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>100.0 100<br>EEGEee<br>TJ = 175J = 175= 175 ° C<br>10.0 10 100µsec<br>HA) 1 ORR<br>1.0<br>TJ = 25°CJ = 25°C= 25°C Tc = 25°C 1msec<br>VGS = 0VGS = 0V= 0V Tj = 175Single Pulse°C 10msec<br>0.1<br>0.1 FoLeee TE<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 1000<br>VDS  , Drain-toSource Voltage (V)<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


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1000.0<br>100.0<br>EEGEee<br>TJ = 175J = 175= 175 ° C<br>10.0<br>HA)<br>1.0<br>TJ = 25°CJ = 25°C= 25°C<br>VGS = 0VGS = 0V= 0V<br>0.1 FoLeee<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD, Source-toDrain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig. 7** Typical Source-to-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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40<br>30<br>20 Pee<br>iiss<br>10 CLL EEEEN<br>PL EEELEA\<br>0<br>25 50 75 100 125 150 175<br>TJ , Junction Temperature (°C)<br>ID  , Drain Current (A)<br>**----- End of picture text -----**<br>


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3.0<br>ID = 22A<br>VGS = 10V<br>2.5<br>2.0<br>TTT<br>1.5 ATT<br>ye<br>1.0<br>0.5 T TTEE<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current vs. Case Temperature 

**Fig 10.** Normalized On-Resistance vs. Temperature 

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10<br>1 D = 0.50 HAA T E LTTE<br>0.20<br>0.10<br>0.1 0.05 eT<br>0.02<br>0.01<br>eee || ||<br>0.01 SINGLE PULSE<br>( THERMAL RESPONSE )<br>0.001 sii TTALEE| FT LL ETTE LET TH<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z  thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>L DRIVER<br>VDS<br>R G D.U.T +<br>_ - [V][DD]<br>IAS<br>20V<br>tp 0.01<br>: hk |y |<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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V(BR)DSS<br>. tp |<br> Unclamped Inductive Waveforms<br>Id<br>Vds<br>Vgs<br>Vgs(th)<br>U N =<br>Qgs1 Qgs2 Qgd Qgodr<br>a<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
IAS<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

**Fig 13a.** Gate Charge Waveform 

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180<br>160 EERE ID<br>140 NEREEEE TOP         8.3A14A<br>BOTTOM 20A<br>120 PNTTL<br>100<br>NON EEE EE<br>80<br>NAAN EET<br>60<br>PANNE<br>40<br>BERRNNNGEEEE<br>20<br>SR RRERSNNEEE<br>0 PLT | | |ASA<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>Fig 12c.  Maximum Avalanche Energy<br> vs. Drain Current<br>4.0<br>3.5<br>PNET TT<br>3.0 ID = 250µA<br>N\<br>PST<br>2.5<br>HELEN<br>2.0<br>LETT LENG<br>cS<br>1.5<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>EAS , Single Pulse Avalanche Energy (mJ)<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 14.** Threshold Voltage vs. Temperature 

**Fig 13b.** Gate Charge Test Circuit 

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1000<br>Duty Cycle = Single Pulse<br>100 Allowed avalanche Current vs<br>avalanche  pulsewidth,  tav<br>Fre 0.01 assuming  Tj = 25°C due to<br>avalanche losses<br>10<br>0.05<br>ee ee<br>0.10<br>1 Po ee al<br>sataee meeBeva BUati eee<br>0.1<br>1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 15.** Typical Avalanche Current vs. Pulse width 

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100<br>TOP          Single Pulse<br>90 To<br>BOTTOM   10% Duty Cycle<br>80 I D  = 20A<br>70<br>60 PIN<br>TT TT TT<br>50 COON<br>40 COON<br>30 COON<br>20 COON<br>10<br>Pit TTT TT NET<br>CCPC<br>0<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.infineon.com)** 

1. Avalanche failures assumption: 

   - Purely a thermal phenomenon and failure occurs at a temperature far in 

   - excess of Tjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 

3.  Equation below based on circuit and waveforms shown in Figures 12a, 12b. 

4.  PD (ave) = Average power dissipation per single avalanche pulse. 

5.  BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

6.  Iav = Allowable avalanche current. 

7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). 

   - tav = Average time in avalanche. 

   - D = Duty cycle in avalanche =  tav ·f 

   - ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =**  **T/ ZthJC Iav = 2**  **T/ [1.3·BV·Zth]** 

**EAS (AR) = PD (ave)·tav** 

**Fig 16.** Maximum Avalanche Energy vs. Temperature 

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**Fig 17.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs 

**Fig 18a.** Switching Time Test Circuit 

**Fig 18b.** Switching Time Waveforms 

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**TO-220AB Package Outline** (Dimensions are shown in millimeters (inches)) 

## **TO-220AB Part Marking Information** 

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Part Number  AUF540Z<br>Date Code<br>IR Logo  T éaR YWWA  Y= Year<br>WW= Work Week<br><br>XX         XX<br>a<br>Lot Code<br>**----- End of picture text -----**<br>


TO-220AB  package is not recommended for Surface Mount Application. 

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**D[2] Pak (TO-263AB) Package Outline** (Dimensions are shown in millimeters (inches)) 

## **D[2] Pak (TO-263AB) Part Marking Information** 

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Part Number  AUF540ZS<br>Date Code<br>IR Logo  T ézR YWWA  Y= Year<br>WW= Work Week<br><br>XX         XX<br>[|Sd<br>Lot Code<br>**----- End of picture text -----**<br>


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~~Cinfineon~~ 

AUIRF540Z/S ~~LL~~ 

## **D[2] Pak (TO-263AB) Tape & Reel Information** (Dimensions are shown in millimeters (inches)) 

**==> picture [385 x 163] intentionally omitted <==**

**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)<br>3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>**----- End of picture text -----**<br>


**==> picture [70 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
FEED DIRECTION<br>**----- End of picture text -----**<br>


**==> picture [377 x 189] intentionally omitted <==**

**----- Start of picture text -----**<br>
13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418.<br>26.40 (1.039) 4<br>2.   CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)<br>3.   DIMENSION MEASURED @ HUB. 3<br>**----- End of picture text -----**<br>


4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 

11 

2015-9-30 

~~“ee~~ 

AUIRF540Z/S ~~& &»«=€=5 =a~~ 

## **Qualification Information** 

|**Qualification Information**|**Qualification Information**|||
|---|---|---|---|
|**Qualification Level**||Automotive<br>(per AEC-Q101)||
|||Comments: This part number(s) passed Automotive qualification. Infineon’s<br>Industrial and Consumer qualification level is granted by extension of the higher<br>Automotive level.||
|**Moisture Sensitivity Level**||TO-220AB|N/A|
|||D2-Pak|MSL1|
|**ESD**|Machine Model|Class M4 (400V)† <br>AEC-Q101-002||
||Human Body Model|Class H1B (1000V)†<br>AEC-Q101-001||
||Charged Device Model|Class C3 (750V)† <br>AEC-Q101-005||
|**RoHS Compliant**||Yes||



- Highest passing voltage. 

## **Revision History** 

|**Date**|||**Comments**|
|---|---|---|---|
|9/30/2015||Updated datasheet with corporate template||
|||Corrected orderingtable onpage 1.||



**Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.** 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not ~~_~~ be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

12 

2015-9-30 



## Links

- [View this product on Novapart](https://novapart.co/products/AUIRF540Z/power-mosfet-n-channel-100-v-36-a-00265-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/auirf540z/mosfet-n-ch-100v-36a-to220ab/dp/1864534)
---

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