# Power MOSFET, N Channel, 55 V, 75 A, 0.0039 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:2062056/)

**URL**: https://novapart.co/products/AUIRF2805/power-mosfet-n-channel-55-v-75-a-00039-ohm-to
**SKU**: AUIRF2805
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.6300
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Qualification | AEC-Q101 |
| Power Dissipation | 330W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 330W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.0039ohm |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 75A |
| Drain Source On State Resistance | 0.0039ohm |
| Automotive Qualification Standard | AEC-Q101 |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2062056/)

PD - 97690A 

## **AUTOMOTIVE GRADE** 

## AUIRF2805 

## **Features** 

## HEXFET[®] Power MOSFET 

|||D||**V(BR)DSS**<br>**RDS(on)   typ.**|**55V**<br>**3.9m**|
|---|---|---|---|---|---|
|G||S||**max**<br>**ID (Silicon Limited)**<br>**ID (Package Limited)**|**4.7m**<br>**175A**<br>**75A**|



## **Description** 

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D<br>ro<br>"<br>a ,<br>—~ NS D S<br>. G<br>TO-220AB<br>AUIRF2805<br>G D S<br>Gate Drain Source<br>i<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.   These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V(Silicon Limited)|175|A|
|ID@ TC= 100°C|Continuous Drain Current, VGS @ 10V(Silicon Limited)|120||
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V(Package Limited)|75||
|IDM|Pulsed Drain Current|700||
|PD@TC= 25°C|Power Dissipation|330|W|
||Linear Derating Factor<br>~~a~~|2.2<br>~~a~~|W/°C<br>~~a~~|
|VGS|Linear Derating Factor<br>Gate-to-Source Voltage<br>~~a~~|± 20<br>~~a~~|V<br>~~a~~|
|EAS<br>~~Ce~~|Single Pulse Avalanche Energy (ThermallyLimited)<br>~~a~~<br>~~Ce~~|450<br>~~a~~|mJ<br>~~a~~|
|EAS(tested)<br>~~Ce~~|Single Pulse Avalanche EnergyTested Value<br>~~Ce~~|1220||
|IAR<br>~~Ce~~|Avalanche Current<br>~~Cea~~|See Fig. 12a, 12b, 15, 16<br>~~a~~<br>~~ee~~|A|
|EAR<br>|Repetitive Avalanche Energy<br>~~a~~<br>~~re~~||mJ<br>~~ee~~|
|TJ<br>TSTG<br>|Operating Junction and<br>Storage Temperature Range<br>~~a~~<br>~~re~~|-55  to + 175<br>~~a~~<br>~~ee~~|°C<br>~~ee~~|
||Soldering Temperature, for 10 seconds (1.6mm from case )<br>~~re~~|300<br>~~ee~~||
||Soldering Temperature, for 10 seconds (1.6mm from case )<br>Mounting Torque, 6-32 or M3 screw<br>~~re ~~<br>~~GS~~|10 lbf in (1.1N m)<br> ~~ee~~<br>~~GS~~|~~ee~~<br>~~GS~~|



HEXFET[®] is a registered trademark of International Rectifier. 

***** Qualification standards can be found at http://www.irf.com/ 

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**Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|Qg|Total Gate Charge<br>~~es~~|–––<br>~~es~~|150<br>~~es~~|230<br>~~es~~|nC|ID= 104A<br>VDS= 44V<br>VGS= 10V<br>®|
|Qgs|Gate-to-Source Charge<br>~~es~~|–––<br>~~es~~|38<br>~~es~~|57<br>~~es~~|||
|Qgd|Gate-to-Drain("Miller")Charge|–––|52|78|||
|td(on)|Turn-On DelayTime<br>~~es~~|–––<br>~~es~~|14<br>~~es~~|–––<br>~~es~~|ns|VDD= 28V<br>ID= 104A<br>RG= 2.5<br>VGS= 10V|
|tr|Rise Time<br>~~es~~|–––<br>~~es~~<br>~~se~~|120<br>~~es~~<br>~~se~~|–––<br>~~es~~|||
|td(off)|Turn-Off DelayTime<br>~~es~~|–––<br>~~es~~<br>~~se~~|68<br>~~es~~<br>~~se~~|–––<br>~~es~~|||
|tf|Fall Time|–––<br>~~se~~|110<br>~~se~~|–––|||
|LD|Internal Drain Inductance|–––|4.5|–––|nH|S<br>D<br>G<br>Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact|
|LS|Internal Source Inductance|–––|7.5|–––|||
|Ciss|Input Capacitance<br>~~a~~|–––<br>~~a~~|5110<br>~~a~~|–––<br>~~a~~|pF<br>|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz, See Fig. 5|
|Coss|Output Capacitance<br>~~es~~|–––<br>~~es~~|1190<br>~~es~~|–––<br>~~es~~|||
|Crss|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~es~~|210<br>~~es~~|–––<br>~~es~~|||
|Coss<br>~~po~~|Output Capacitance<br>~~es~~<br>~~po~~|–––<br>~~es~~<br>~~po~~|6470<br>~~es~~<br>~~po~~|–––<br>~~es~~<br>~~po~~||VGS= 0V,  VDS= 1.0V,ƒ= 1.0MHz|
|Coss<br>~~po~~<br>~~a~~|Output Capacitance<br>~~po~~<br>~~a~~|–––<br>~~po~~<br>|860<br>~~po~~<br>|–––<br>~~po~~<br>||VGS= 0V,  VDS= 44V,ƒ= 1.0MHz<br>|
|Cosseff.<br>~~po~~<br>~~a~~|Effective Output Capacitance<br>~~po~~<br>~~a~~|–––<br>~~po~~<br>|1600<br>~~po~~<br>|–––<br>~~po~~<br>||VGS= 0V, VDS= 0V to 44V<br>|
|**Diode Characteristics**<br>~~a~~|||||||
|~~QO~~|**Parameter**<br>~~QO~~|**Min.**<br>~~QO~~|**Typ.**<br>~~QO~~|**Max. **<br>~~QO~~|**Units**<br>~~QO~~|**Conditions**<br>~~QO~~|
|IS|Continuous Source Current<br>(Body Diode)|–––|–––|175|A|S<br>D<br>G<br>showing  the<br>integral reverse<br>p-n junction diode.<br>MOSFET symbol|
|ISM|(Body Diode)<br>Pulsed Source Current<br>(Body Diode)|–––|–––|700|||
|VSD|(Body Diode)<br>Diode Forward Voltage<br>~~pf~~<br>~~**e**e~~|–––<br>~~pf~~<br>~~e~~|–––<br>~~pf~~<br>~~e~~|1.3<br>~~pf~~<br>~~ee~~|V<br>~~pf~~<br>~~ee~~|TJ= 25°C, IS= 104A, VGS= 0V<br>pn junction diode.<br>~~pf~~|
|trr|Reverse RecoveryTime<br>~~pf~~<br>~~**e**e~~<br>~~s~~|–––<br>~~pf~~<br>~~e~~|80<br>~~pf~~<br>~~e~~|120<br>~~pf~~<br>~~ee~~|ns<br>~~pf~~<br>~~ee~~|TJ= 25°C, IF= 104A<br>di/dt = 100A/μs<br>~~pf~~<br>~~®~~|
|Qrr|Reverse RecoveryCharge<br>~~**e**e~~<br>~~s~~|–––<br>~~e~~|290<br>~~e~~|430<br>~~ee~~|nC<br>~~ee~~||
|ton|Forward Turn-On Time<br>~~**e**e~~<br>~~s~~<br>~~a~~|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>~~e ee~~<br>~~®~~<br>~~DO~~|||||



> Notes: ) Repetitive rating;  pulse width limited by © Cossoss eff. is a fixed capacitance that gives the same charging time a max. junction temperature. (See fig. 11). as Coss while VDS is rising from 0 to 80% VDSS .oss while VDS is rising from 0 to 80% VDSS .while VDS is rising from 0 to 80% VDSS .DS is rising from 0 to 80% VDSS .is rising from 0 to 80% VDSS .DSS . . @ Starting TJ = 25°C, L = 0.08mH © Limited by TJmaxJmax , see Fig.12a, 12b, 15, 16 for typical repetitive RG = 25, IAS = 104A. (See Figure 12). avalanche performance. T ° ISD J  175°C 104A, di/dt  240A/μs, VDD V(BR)DSS, ®@ This value determined from sample failure population, starting ® Pulse width  400μs; duty cycle  2%. TJ = 25°C, L = 0.08mH, RG = 25, IAS = 104A.J = 25°C, L = 0.08mH, RG = 25, IAS = 104A.= 25°C, L = 0.08mH, RG = 25, IAS = 104A.G = 25, IAS = 104A.= 25, IAS = 104A., IAS = 104A., IAS = 104A.AS = 104A.= 104A. 

> © Cossoss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS .oss while VDS is rising from 0 to 80% VDSS .while VDS is rising from 0 to 80% VDSS .DS is rising from 0 to 80% VDSS .is rising from 0 to 80% VDSS .DSS . . 

© Limited by TJmaxJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. ®@ This value determined from sample failure population, starting TJ = 25°C, L = 0.08mH, RG = 25, IAS = 104A.J = 25°C, L = 0.08mH, RG = 25, IAS = 104A.= 25°C, L = 0.08mH, RG = 25, IAS = 104A.G = 25, IAS = 104A.= 25, IAS = 104A., IAS = 104A., IAS = 104A.AS = 104A.= 104A. Ris measured at Ty of approximately 90°C. 

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|**Qualification Information†**|**Qualification Information†**|||
|---|---|---|---|
|**Qualification Level**||Automotive<br>(per AEC-Q101)††||
|||Comments:<br>This part number(s) passed Automotive qualification.<br>IR’s<br>Industrial<br>and<br>Consumer<br>qualification<br>level<br>is<br>granted by<br>extension of the higher Automotive level.||
|**Moisture Sensitivity Level**||TO-220|N/A|
|**ESD**|Machine Model|Class M4 (+/- >800V)†††<br>AEC-Q101-002||
||Human Body Model|Class H3A (+/- 5000V)†††<br>AEC-Q101-001||
||Charged Device Model|Class C5 (+/- >2000V)†††<br>AEC-Q101-005||
|**RoHS Compliant**||Yes||



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1000<br>VGS<br>TOP          15V<br>                  10V<br>                  8.0V<br>                  7.0V<br>                  6.0V | aE al<br>                  5.5V<br>100                   5.0V eI<br>BOTTOM 4.5V<br>a<br>4.5V<br>VG Y aor ||<br>VY<br>10<br>BnFEE<br>SS ee<br>20μs PULSE WIDTH<br>a Tj = 25°C aa<br>1<br>aniline<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000<br>T = 25°C<br>J<br>P| | | | Lge T J  = 175°C<br>A<br>PAL<br>100<br>PA EE<br>PY | | ft ft Py yt ft ft<br>Poof | | tt<br>V = 25V<br>DS<br>20μs PULSE WIDTH<br>10<br>4.0 5.0 6.0 7.0 8.0 9.0 10.0<br>VGS, Gate-to-Source Voltage (V)<br>A)<br><br>ID, Drain-to-Source Current<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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1000<br>VGS<br>TOP          15V<br>                  10V<br>                  8.0V<br>                  7.0V<br>                  6.0V TL AAI<br>                  5.5V<br>                  5.0V A<br>BOTTOM 4.5V<br>WM ec<br>100<br>eee, | 4.5V el<br>ey’ey (oeieee ema|<br>ey A a<br>20μs PULSE WIDTH<br>7 Ai Tj = 175°C<br>10<br>PLL il<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 2.** Typical Output Characteristics 

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200<br>160<br>TJ = 175°C oT<br>120<br>T = 25°C<br>80 fy J<br>40<br>V = 25V<br>DS<br>20μs PULSE WIDTH<br>0<br>0 40 80 120 160 200<br>ID, Drain-to-Source Current (A)<br>Gfs, Forward Transconductance (S)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Typical Forward Transconductance Vs. Drain Current 

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10000 20<br>V C SHORTEDGS   iss   = 0V,       f = 1 MHZ    = C gs  + C gd ,   C ds  I D = 104A VVDS= 28V DS = 44V<br>8000 |i| | C   = C 16 pap| ak}PX]<br>rss   gd<br>Coss    = Cds  + Cgd<br><i 12 eer<br>6000 mM ee VA<br>Ciss<br>PNT EHH 8 | | ||<br>4000<br>PONE Baal 4 ff<br>SN | 4 Aa<br>2000<br>pe | A<br>Coss<br>Crss 0<br>0 || st tr —_E LO<br>0 40 80 120 160 200 240<br>1 10 100<br> QG  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000.0 10000<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>T J  = 175°C<br>100.0 1000<br>10.0 100<br>100μsec<br>T = 25°C 1msec<br>J<br>1.0 10<br>Tc = 25°C<br>a Tj = 175°C Pe 10msec Sette<br>0.1 Fissese VGS GS  ee = 0V ee 1 Sin eel: gle Pulse<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1 10 100 1000<br>VSD, Source-toDrain Voltage (V) VDS  , Drain-toSource Voltage (V)<br>ISD, Reverse Drain Current (A)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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1000.0<br>T J  = 175°C<br>100.0<br>10.0<br>T = 25°C<br>J<br>1.0<br>a<br>0.1 Fissese VGS GS  ee = 0V<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8<br>VSD, Source-toDrain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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3.0<br>IDD = 175A<br>2.5 PETEE ETTEE ET ET EE<br>Pt tT tee tT Ty<br>2.0 Pt tt tee TT yt i<br>PtERRtTERRtTtT teRReeeeETEeRReeeeETEeETEeEe<br>1.5<br>ERRPi]Pi] te | preAesAes<br>1.0 PtEeetT tT | Ereeee<br>EeetT aaeeeeEreeee<br>0.5 HT}Pt Tt}tT tT tTtytetyytyyy tetyytyyy tyyy<br>Pt tT tT tytetyytyyy yytyyy yy<br>V GS = 10V<br>0.0 PEE eT TT [[Tt]]]<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>T  , Junction TemperatureJJ (    C)°°<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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180<br>IDD = 175A<br>150 aa LIMITED BY PACKAGE naan 2.5 PETEE ETTEE ET ET EE<br>| \ || [| Pt tT tee tT Ty<br>120 | | | RAE EY po 2.0 Pt tt tee TT yt i<br>PT| {|| || A repoCRE PtERRtTERRtTtT teRReeeeETEeRReeeeETEeETEeEe<br>90 1.5<br>peBRN ERRPi]Pi] te | preAesAes<br>60 PEtPT tT ttEETyt yyEE EATN 1.0 PtEeetT | aaeeeeEreeee<br>30 PetPet teeEET EEEE EN 0.5 HT}Pt tT Tt}tT tT tTtytetyytyyy<br>V GS = 10V<br>0 PTT} eT TE tt 0.0 PEE eT TT [[Tt]]]<br>25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>T   , Case TemperatureC (  C)° T  , Junction TemperatureJJ (    C)°°<br>Fig 9.   Maximum Drain Current Vs. Fig 10.   Normalized On-Resistance<br>Vs. Temperature<br>Case Temperature<br> 1<br>nel<br>D = 0.50<br>ee EEL ee eee<br>0.1 0.20<br>0.10<br>SS eee eeees<br>0.05<br>ee ae<br>0.02 SINGLE PULSE<br>0.01 (THERMAL RESPONSE) P DM<br>0.01 =2 FayTT TITCh t 1<br>t 2<br>a<br>Notes:<br>1. Duty factor D = t   / t1 2<br>Pei 2. Peak T J = P DM x  Z thJC + T C<br>0.001 i<br>0.00001 0.0001 0.001 0.01 0.1<br>t  , Rectangular Pulse Duration (sec)1<br>(Normalized)<br>I   , Drain Current (A)D<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>thJC<br>(Z          )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>w el<br>2V0VGS<br>E o+k tp 0.01<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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V(BR)DSS<br>tp<br>/ |<br>IAS<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

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QG —- 3<br>bee QGS QGD<br>VG<br>Charge<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

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Current Regulator<br>a Same Type as D.U.T.<br>50K<br>12V .2F<br>.3F<br>+<br>The D.U.T. | -VDS<br>VGS<br>3mA<br>a |<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


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1000<br>I D<br>Pi] [tt] TOP 43A<br>87A<br>800 BOTTOM 104A<br>foaeeeNESE ce<br>600<br>ENE<br>ERNE<br>400 RIN|<br>BSNEXUREee<br>200 SERSNONEEEEeptyOSS A<br>Pt rE<br>0 SS<br>25 50 75 100 125 150 175<br>Starting Tj, Junction Temperature (   C)°<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

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4.0<br>EEL EEE ID = 250μA E EE<br>3.0<br>PPS<br>LLANE<br>2.0<br>PEEP<br>1.0 EELS<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 14.** Threshold Voltage Vs. Temperature 

**Fig 13b.** Gate Charge Test Circuit 

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10000<br>Duty Cycle = Single Pulse<br>1000 cc IEITIP Allowed avalanche Current vs<br>avalanche pulsewidth, tav<br>| assuming avalanche losses. Note: In no  Tj = 25°C due to  cr<br>0.01<br>100 TE case should Tj be allowed to<br>exceed Tjmax<br>0.05<br>0 .10<br>10  .<br>1 en i<br>1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.   Typical Avalanche Current Vs.Pulsewidth<br>500<br>Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>Bani TOP          Single Pulse<br>(For further info, see AN-1005 at www.irf.com)<br>BOTTOM   10% Duty Cycle<br>1. Avalanche failures assumption:<br>400 ID = 104A<br>Naa   Purely a thermal phenomenon and failure occurs at a<br>    temperature far in excess of Tjmax. This is validated for<br>    every part type.<br>300 2. Safe operation in Avalanche is allowed as long asTjmax is<br>a. NEEee<br>  not exceeded.<br>P T NE 3. Equation below based on circuit and waveforms shown in<br>a EE EE TE   Figures 12a, 12b.<br>200<br>4. PD (ave) = Average power dissipation per single<br>PT TTTeaNe [NEEL]  eee     avalanche pulse.<br>5. BV = Rated breakdown voltage (1.3 factor accounts for<br>100 Pit TT NEETLLL     voltage increase during avalanche).<br>6. Iav = Allowable avalanche current.<br>SRRRRREDNGae 7. T = Allowable rise in junction temperature, not to exceed<br>0 PEE TT TT | NU     Tjmax (assumed as 25°C in Figure 15, 16).<br>25 50 75 100 125 150 175   tav = Average time in avalanche.<br>  D = Duty cycle in avalanche =  tav ·f<br>Starting TJ , Junction Temperature (°C)   ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


- ZthJC(D, tav) = Transient thermal resistance, see figure 11) 

   - **PD (ave) = 1/2 ( 1.3·BV·Iav) =** A **T/ ZthJC Iav = 2** A **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

**Fig 16.** Maximum Avalanche Energy Vs. Temperature 

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Driver Gate Drive<br>P.W.<br>D.U.T + {¢$ P.W. Period —— | D = —— Period<br>) [©)] Circuit  Layout Considerations | V i t GS=10V<br>| — -  LowGroundStray Inductance Plane<br>owLeakage Inductance @ D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - [1] Current Transformer - ® + Current r Current di/dt NN<br>® D.U.T. VDS Waveform<br>Diode Recoverydv/dt ‘ ’<br>00 - VDD<br>ay<br> Re-Applied<br>Re (4  spvidt controlledriversame controlledtype as by by DutyRgD.U.T. Factor"D" Vo p +- Voltage ® Inductor Curent Body Diode  Forward Drop<br><br>D.U.T. - Device Under Test Ripple   5% e s ISD ee<br>**----- End of picture text -----**<br>


## **Fig 17.** eak Diode Recovery dv/dt Test Circuit or N-Channel HEXFET ® ower MOSFETs 

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 s<br><br>**----- End of picture text -----**<br>


**Fig 18a.** Switching Time Test Circuit 

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VDS<br>90%<br>10%<br>VGS |\< v l > !\ r i e<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Switching Time Waveforms 

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## **Ordering Information** 

|**Base part**<br>**number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Complete Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|AUIRF2805|TO-220|Tube|**Quantity**<br>50|AUIRF2805|



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## **WORLD HEADQUARTERS:** 

101 N. Sepulveda Blvd., El Segundo, California 90245 Tel: (310) 252-7105 

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## Links

- [View this product on Novapart](https://novapart.co/products/AUIRF2805/power-mosfet-n-channel-55-v-75-a-00039-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/auirf2805/mosfet-n-ch-55v-75a-to-220ab/dp/2062056)
---

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