# Power MOSFET, N Channel, 40 V, 240 A, 1600 µohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:1813395/)

**URL**: https://novapart.co/products/AUIRF2804S-7P/power-mosfet-n-channel-40-v-240-a-1600-ohm-to-263
**SKU**: AUIRF2804S-7P
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.4400
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:240A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; P

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| No. Of Pins | 7Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | AEC-Q101 |
| Power Dissipation | 300W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 240A |
| Drain Source On State Resistance | 1600µohm |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1813395/)

## **AUTOMOTIVE GRADE** 

## **Features** 

- Advanced Process Technology 

- Ultra Low On-Resistance 

- 175°C Operating Temperature 

- Fast Switching 

- Repetitive Avalanche Allowed up to Tjmax 

- Lead-Free, RoHS Compliant 

- Automotive Qualified * 

## AUIRF2804S-7P HEXFET[®] Power MOSFET 

|**V(BR)DSS**|**40V**|
|---|---|
|**RDS(on)   max.**|**1.6m**<br>~~ae~~|
|**ID (Silicon Limited)**<br>~~|~~|**320A**<br>~~ae~~<br>~~O°~~<br>~~|~~|
|**ID (Package Limited)**<br>~~|~~|**240A**<br>~~|~~|



## **Description** 

Specifically designed for Automotive applications, this HEXFET[®] Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.  Additional features of this design  are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. 

|**G**|**D**|**S**|
|---|---|---|
|Gate|Drain|Source|



## **Absolute Maximum Ratings** 

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.   These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. 

||**Parameter**<br>~~————~~|**Max.**<br>~~————~~|**Units**<br>~~ae~~|
|---|---|---|---|
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V (Silicon Limited)<br>~~a~~<br>~~————~~|320<br>~~a~~<br>~~————~~|A<br>~~ae~~|
|ID@ TC= 100°C|Continuous Drain Current, VGS@ 10V (Silicon Limited)<br>~~a~~<br>~~————~~|230<br>~~a~~<br>~~————~~||
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V (Package Limited)<br>~~a~~<br>~~————~~|240<br>~~a~~<br>~~————~~||
|IDM<br>~~TT~~|Pulsed Drain Current<br>~~————~~<br>~~TT~~|1360<br>~~————~~||
|PD@TC= 25°C<br>~~TT~~<br>~~—~~|Maximum Power Dissipation<br>~~————~~<br>~~TT~~<br>~~TeeeeeeesseseseseSHsese~~<br>~~—~~|330<br>~~———— ~~<br>~~TeeeeeeesseseseseSHsese~~|W<br> ~~ae~~<br>~~TeeeeeeesseseseseSHsese~~<br>~~xT~~|
|~~TT~~<br>~~—~~|Linear Derating Factor<br>~~TT~~<br>~~—~~<br>~~eOFROEHTNE-.->sot_~~|2.2<br>~~eOFROEHTNE-.->sot_~~|W/°C<br>~~eOFROEHTNE-.->sot_~~<br>~~xT~~|
|VGS<br>~~—~~|Linear Derating Factor<br>Gate-to-Source Voltage<br>~~—~~<br>~~**a**~~|± 20<br>~~**a**~~|V<br>~~xT~~<br>~~**a**~~|
|EAS|Single Pulse Avalanche Energy (ThermallyLimited)<br>~~**a**~~<br>~~ee~~|630<br>~~**a**~~<br>~~ee~~|mJ<br>~~**a**~~<br>~~ee~~|
|EAS(tested)|Single Pulse Avalanche Energy Tested Value<br>~~ee~~|1050<br>~~ee~~||
|IAR|Avalanche Current<br>~~ee~~|See Fig.12a,12b,15,16<br>~~ee~~|A<br>~~ee~~|
|EAR<br>~~po~~|Repetitive Avalanche Energy<br>~~ee~~<br>~~po~~||mJ<br>~~ee~~|
|TJ<br>TSTG<br>~~po~~|Operating Junction and<br>Storage Temperature Range<br>~~po~~|-55  to + 175|°C|
|~~po~~|Soldering Temperature, for 10 seconds (1.6mm from case )<br>~~po~~|300||



HEXFET[®] is a registered trademark of International Rectifier. 

***** Qualification standards can be found at http://www.irf.com/ 

www.irf.com 

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**Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**<br>~~a~~|**Min.**<br>~~es~~|**Typ.**<br>~~es~~|**Max. **<br>~~Qs~~<br>~~OO~~|**Units**<br>~~Qs~~<br>~~OO~~|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~GO~~|40<br>~~GO~~|–––<br>~~GO~~|–––<br>~~GO~~<br>~~OO~~|V<br>~~GO~~<br>~~OO~~|VGS= 0V,ID= 250μA<br>~~GO~~|
|VDSS/TJ|Breakdown Voltage Temp. Coefficient<br>~~ss~~|–––<br>~~ss~~|0.028<br>~~ss~~|–––<br>~~OO~~<br>~~ss~~|V/°C<br>~~OO~~<br>~~ss~~|Reference to 25°C,ID= 1mA<br>~~ss~~|
|RDS(on) SMD|Static Drain-to-Source On-Resistance<br>~~ss~~<br>~~es~~|–––<br>~~ss~~<br>~~es~~|1.2<br>~~ss~~<br>~~es~~|1.6<br>~~ss~~<br>~~es~~|m<br>~~ss~~<br>~~es~~|VGS= 10V,ID= 160A<br>~~ss~~<br>~~es~~|
|VGS(th)|Gate Threshold Voltage<br>~~es~~<br>~~es~~|2.0<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~es~~|4.0<br>~~es~~<br>~~es~~|V<br>~~es~~<br>~~es~~|VDS= VGS,ID= 250μA<br>~~es~~<br>~~es~~|
|gfs|Forward Transconductance<br>~~es~~<br>~~Gs~~|220<br>~~es~~<br>~~Gs~~<br>~~ee~~|–––<br>~~es~~<br>~~Gs~~<br>~~ee~~|–––<br>~~es~~<br>~~Gs~~<br>~~ee~~|S<br>~~es~~<br>~~Gs~~<br>~~ee~~|VDS= 10V,ID= 160A<br>~~es~~<br>~~Gs~~<br>~~ee~~|
|IDSS|Drain-to-Source Leakage Current<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~|~~|–––<br>~~ee~~<br>~~ee~~<br>~~||~~|20<br>~~ee~~<br>~~ee~~<br>~~|~~|μA<br>~~ee~~<br>~~ee~~|VDS= 40V,VGS= 0V<br>~~ee~~<br>~~ee~~|
|||–––<br>~~ee~~<br>~~ee~~<br>~~|~~|–––<br>~~ee~~<br>~~ee~~<br>~~||~~|250<br>~~ee~~<br>~~ee~~<br>~~|~~||VDS= 40V,VGS= 0V,TJ= 125°C<br>~~ee~~<br>~~ee~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~ee~~|–––<br>~~ee ~~<br>~~|~~<br>~~ee~~|–––<br> ~~ee~~<br>~~| |~~<br>~~ee~~|200<br>~~ee~~<br>~~|~~<br>~~ee~~|nA<br>~~ee ~~<br>~~ee~~|VGS= 20V<br> ~~ee~~<br>~~ee~~|
||Gate-to-Source Reverse Leakage<br>~~ee~~|–––<br>~~ee~~|–––<br>~~ee~~|-200<br>~~ee~~||VGS= -20V<br>~~ee~~|
|**Dynamic Electrical Characteristics @ TJ = 25°C(unless otherwise specified)**<br>~~ee~~|||||||
||**Parameter**<br>~~sD~~|**Min.**<br>~~sD~~|**Typ.**<br>~~sD~~|**Max. **<br>~~sD~~|**Units**<br>~~sD~~|**Conditions**<br>~~sD~~|
|Qg|Total Gate Charge<br>~~ee~~|–––<br>~~ee~~|170<br>~~ee~~|260<br>~~ee~~|nC|ID= 160A<br>VDS= 32V<br>VGS= 10V<br>@|
|Qgs|Gate-to-Source Charge<br>~~a~~|–––<br>~~a~~|63<br>~~a~~|–––<br>~~a~~|||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~a~~|–––<br>~~a~~|71<br>~~a~~|–––<br>~~a~~|||
|td(on)|Turn-On DelayTime<br>~~a~~|–––<br>~~a~~<br>~~ee~~|17<br>~~a~~|–––<br>~~a~~|ns<br>||RG= 2.6<br>VDD= 20V<br>ID= 160A<br>VGS= 10V<br>~~@~~|
|tr|Rise Time<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|150<br>~~ee~~|–––<br>~~ee~~|||
|td(off)|Turn-Off DelayTime<br>~~a~~|–––<br>~~ee~~<br>~~a~~|110<br>~~a~~|–––<br>~~a~~|||
|tf|Fall Time|–––|100|–––|||
|LD|Internal Drain Inductance|–––|4.5|–––|nH<br>||S<br>D<br>G<br>Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>~~@~~|
|LS|Internal Source Inductance|–––<br>~~ee~~|7.5|–––|||
|Ciss|Input Capacitance<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|6930<br>~~ee~~|–––<br>~~ee~~|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz,See Fig. 5<br>~~PO~~|
|Coss|Output Capacitance<br>~~a~~|–––<br>~~ee~~<br>~~a~~|1750<br>~~a~~|–––<br>~~a~~|||
|Crss|Reverse Transfer Capacitance<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|970<br>~~ee~~|–––<br>~~ee~~|||
|Coss|Output Capacitance<br>~~ee~~|–––|5740|–––||VGS= 0V,VDS= 1.0V, ƒ= 1.0MHz<br>~~PO~~|
|Coss|Output Capacitance<br>~~ee~~<br>~~a~~|–––|1570|–––||VGS= 0V,VDS= 32V, ƒ= 1.0MHz<br>~~PO~~<br>~~PO~~|
|Cosseff.|Effective Output Capacitance<br>~~a~~<br>~~OG~~|–––<br>~~OG~~|2340<br>~~OG~~|–––<br>~~OG~~||VGS= 0V,VDS= 0V to 32V<br>~~PO~~|



Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 240A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. 

Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

© Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. 

® Repetitive rating;  pulse width limited by max. junction temperature. (See fig. 11). @ Limited by TJmax, starting TJ = 25°C, 

L=0.049mH, RG = 25, IAS = 160A, VGS =10V. Part not recommended for use above this value. 

starting TJ = 25°C, L=0.049mH, RG = 25, IAS = 160A, VGS =10V. This is applied to D[2] Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).  For recommended footprint and soldering techniques refer to application note #AN-994. Ris measured at Ty of approximately 90°C. 

Pulse width  1.0ms; duty cycle  2%. 

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## **Qualification Information[†]** 

|**Qualification Information[†]**|**Qualification Information[†]**|||
|---|---|---|---|
|**Qualification Level**||Automotive<br>(per AEC-Q101)††||
|||Comments:<br>This part number(s) passed Automotive<br>qualification. IR’s Industrial and Consumer qualification<br>level is granted by extension of the higher Automotive<br>level.||
|**Moisture Sensitivity Level**||D2Pak 7 Pin|MSL1|
|**ESD**|Machine Model|Class M4<br>AEC-Q101-002||
||Human Body Model|Class H3A<br>AEC-Q101-001||
||Charged Device<br>Model|Class C5<br>AEC-Q101-005||
|**RoHS Compliant**||Yes||



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10000<br>VGS<br>TOP           15V<br>10V<br>8.0V7.0V FPL<br>6.0V<br>5.5V<br>1000 5.0V<br>BOTTOM 4.5V failaii mal<br>el) nn ll<br>a ot el<br>100 OP ee |<br>GAL<br>Zo ee ee |<br>4.5V   60μs PULSE WIDTH<br>Tj = 25°C<br>10 CATHT ssw | LILI<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000.0 TS)es es ee a ee<br>100.0<br>T = 175°C<br>Yr J<br>Se<br>10.0 A<br>BAR T J  = 25°C<br>1.0<br>| V = 20V<br>DS<br>Ey i ee  60μs PULSE WIDTH<br>0.1<br>caine<br>2.0 3.0 4.0 5.0 6.0 7.0 8.0<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>)<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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10000<br>VGS<br>TOP           15V<br>10V<br>8.0V7.0V FPL<br>6.0V<br>5.5V<br>1000 5.0V<br>BOTTOM 4.5V Hil imatl<br>Ser<br>ee|<br>a)<br>100 | gee ZaneTN al|<br>4.5V<br>| AA<br>Y CAME ee ee ee |<br> 60μs PULSE WIDTH<br>ati Tj = 175°C<br>10 TCvwELLL<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>240<br>TJ = 25°C<br>200 fooPee—<br>160<br>< SS aan<br>T = 175°C<br>| KA J<br>120 ea<br>80 Wa oo<br>40<br>Vi VDS = 10V<br>380μs PULSE WIDTH<br>0 [| |<br>0 20 40 60 80 100 120 140<br>ID, Drain-to-Source Current (A)<br>Gfs, Forward Transconductance (S)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 4.** Typical Forward Transconductance vs. Drain Current 

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14000 20<br>VCGS  iss   = C = 0V,       f = 1 MHZgs + Cgd,  Cds SHORTED ID= 160A VDS= 32V<br>12000 Crss   = Cgd  16 VDS= 20V<br>TT] Coss  = Cds + Cgd poy<br>10000<br>12<br>8000 Ciss<br>Sto) =  ECC<br>6000 pa ned 8 y<br>CTS = |Le<br>4000 Coss<br>SUIT | a a<br>4<br>2000 Crss<br>Datel 0<br>0<br>0 50 100 150 200 250 300<br>1 10 100<br> QG  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>VGS, Gate-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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1000.0<br>T = 175°C<br>J<br>100.0<br>10.0<br>T J  = 25°C<br>1.0<br>VGS = 0V<br>0.1<br>0.0 0.4 0.8 1.2 1.6 2.0 2.4<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


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10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>1000<br>100μsec<br>100<br>10<br>1msec<br>1 Tc = 25°C<br>Tj = 175°C 10msec<br>Single Pulse DC<br>0.1<br>0 1 10 100 1000<br>VDS  , Drain-toSource Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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350 2.0<br>ID = 160A<br>300 Limited By Package V GS  = 10V<br>250<br>1.5<br>pai] (i<br>200<br>LA<br>150<br>) ce<br>1.0<br>100<br>aeeNe Suan<br>aaa at<br>50<br>0 TEEPE IN 0.5 PEEL EEE<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C) TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current vs. Case Temperature 

**Fig 10.** Normalized On-Resistance vs. Temperature 

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1<br>D = 0.50<br>rrr tt<br>0.1 0.20<br>0.10<br>eae se eg ee ed eee ee eel<br>-— 0.05 sao _|_L ea R 1 R1 R 2 R2 or Ri (°C/W)    oe  i (sec)<br>0.01 0.020.01 J J1  1 22 C 0.1951     0.0007430.3050 0.008219<br>ee ae ee ee Ci= CiiRiiRi sd |<br>0.001<br>pt er<br>SINGLE PULSE Notes:<br>rT ( THERMAL RESPONSE ) 0 1. Duty Factor D = t1/t2<br>PE 2. Peak Tj = P dm x Zthjc + Tc<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>2V0VGS<br>tp 0.01<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit V(BR)DSS ~~_.~~ tp IAS ~~aA~~ lL 

**Fig 12b.** Unclamped Inductive Waveforms 

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w y QG<br>QGS QGD<br>VG<br>/<br>Charge<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

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L<br>VCC<br>DUT<br>0<br>1K<br>n ed}<br>Fig 13b.   Gate Charge Test Circuit<br>www.irf.com<br>**----- End of picture text -----**<br>


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2500<br>                 I<br>D<br>TOP          21A<br>2000                 33A<br>BOTTOM   160A<br>NO<br>1500<br>1000<br>500<br>BNNSEe<br>0<br>(|<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>Fig 12c.   Maximum Avalanche Energy<br>SS vs. Drain Current<br>4.5<br>4.0 PR<br>3.5 Pi}PeEEE<br>3.0 Ss| PEAS<br>ID = 1.0A<br>2.5<br>ID = 1.0mA<br>2.0 ID = 250μA aaaNNG<br>PoP<br>1.5 ETT ISS<br>1.0<br>0.5 PE ETT TTT Ey<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>SERRE<br>VGS(th) Gate threshold Voltage (V)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 14.** Threshold Voltage vs. Temperature 

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10000<br>Duty Cycle = Single Pulse<br>1000<br>Allowed avalanche Current vs<br>avalanche  pulsewidth,  tav<br>100 0.01 assuming  Tj = 25 ° C due to<br>avalanche losses. Note: In no<br>0.05<br>case should Tj be allowed to<br>0.10 exceed Tjmax<br>10<br>1 |<br>0.1 PE<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.   Typical Avalanche Current vs.Pulsewidth<br>Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>800 (For further info, see AN-1005 at www.irf.com)<br>TOP          Single Pulse                 1. Avalanche failures assumption:<br>BOTTOM   1% Duty Cycle   Purely a thermal phenomenon and failure occurs at a<br>ID = 160A     temperature far in excess of Tjmax. This is validated for<br>600     every part type.<br>2. Safe operation in Avalanche is allowed as long asTjmax is<br>  not exceeded.<br>3. Equation below based on circuit and waveforms shown in<br>400 RUPAN   Figures 12a, 12b.<br>4. PD (ave) = Average power dissipation per single<br>    avalanche pulse.<br>5. BV = Rated breakdown voltage (1.3 factor accounts for<br>200 NSU     voltage increase during avalanche).<br>6. Iav = Allowable avalanche current.<br>7. T = Allowable rise in junction temperature, not to exceed<br>TAS     Tjmax (assumed as 25°C in Figure 15, 16).<br>0 ELLE   tav = Average time in avalanche.<br>25 50 75 100 125 150 175   D = Duty cycle in avalanche =  tav ·f<br>  ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy vs. Temperature 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =** A **T/ ZthJC Iav = 2** A **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

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**==> picture [415 x 490] intentionally omitted <==**

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Driver Gate Drive<br>P.W.<br>D.U.T + {¢$ P.W. Period —— | D = —— Period<br>) [©)] Circuit  Layout Considerations | V i t GS=10V<br><br>| =] - LowGround StrayPla I n eductance<br> Low Leakage Inductance @ D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - [l] Current Transformer - ® + Current r Current di/dt NN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘ '<br>00 _ VDD<br>ay<br> Re-Applied<br> Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re (A  vidt controlled by Rg Vo p - Inductor Curent<br> D.U.T. - Device Under Test e s ee<br>Isp controlled by Duty Factor "D" ® Ripple   5% ISD<br>* Vgg = 5V for Logic Level Devices<br>Fig 17. eak Diode Recovery dv/dt Test Circuit or N-Channel<br>HEXFET ® ower MOSFETs<br>Rp<br>Vv D.UT.<br>Re<br>° DD<br>)¢ 10V<br>Pulse Width  s<br>Duty Factor <br>Fig 18a.   Switching Time Test Circuit<br>VDS<br>90%<br>|<br>|<br>|<br>10%<br>VGS | |<br>la h > ! ab l e<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Switching Time Waveforms 

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## D[2] Pak - 7 Pin Package Outline 

Dimensions are shown in millimeters (inches) 

## D[2] Pak - 7 Pin Part Marking Information 

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## D[2] Pak - 7 Pin Tape and Reel 

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## **Ordering Information** 

|**Base part**<br>**number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Complete Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|AUIRF2804S-7P|D2Pak 7 Pin|Tube|**Quantity**<br>75|AUIRF2804S-7P|
|||Tape and Reel Left|800|AUIRF2804STRL7P|
|||Tape and Reel Left<br>Tape and Reel Right|800|AUIRF2804STRR7P|



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## Links

- [View this product on Novapart](https://novapart.co/products/AUIRF2804S-7P/power-mosfet-n-channel-40-v-240-a-1600-ohm-to-263)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/auirf2804s-7p/mosfet-n-ch-40v-240a-d2pak-7p/dp/1813395)
---

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