# Power MOSFET, N Channel, 55 V, 150 A, 0.0037 ohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:1857358/)

**URL**: https://novapart.co/products/AUIRF1405ZS/power-mosfet-n-channel-55-v-150-a-00037-ohm-to-263
**SKU**: AUIRF1405ZS
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €2.1100
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 2Pins |
| Channel Type | N Channel |
| Qualification | AEC-Q101 |
| Power Dissipation | 230W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 230W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.0037ohm |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 150A |
| Drain Source On State Resistance | 0.0037ohm |
| Automotive Qualification Standard | AEC-Q101 |
| Gate Source Threshold Voltage Max | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1857358/)

AUIRF1405ZS AUIRF1405ZL ~~po~~ 

**AUTOMOTIVE GRADE** 

HEXFET[® ] Power MOSFET 

## ~~Cinfin eon~~ 

## **Features** 

 Advanced Process Technology **VDSS 55V**  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching **RDS(on)   max. 4.9m**   Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant ~~——~~ **ID 150A**  Automotive Qualified * D **Description** D Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing S S techniques to achieve extremely low on-resistance per silicon G G[D ] area.  Additional features of this design  are a 175°C junction operating temperature, fast switching speed and improved D[2] Pak TO-262 AUIRF1405ZS AUIRF1405ZL repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other **G D S** applications. Gate Drain Source ~~a~~ 

|**Base part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|AUIRF1405ZL|TO-262|Tube|50|AUIRF1405ZL|
|AUIRF1405ZS|D2-Pak|Tube|50|AUIRF1405ZS|
|||Tape and Reel Left|800|AUIRF1405ZSTRL|



## **Absolute Maximum Ratings** 

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.   These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. 

|**Symbol**|**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V|150|A|
|ID @TC= 100°C|Continuous Drain Current,VGS @10V|110||
|IDM|Pulsed Drain Current|600||
|PD@TC= 25°C|Maximum Power Dissipation|230|W|
|~~—~~|Linear DeratingFactor<br>|1.5<br>|W/°C<br>|
|VGS<br>~~—~~|Gate-to-SourceVoltage<br>|±20<br>|V<br>|
|EAS<br>~~—~~|Single Pulse Avalanche Energy (ThermallyLimited) <br>|270<br>|mJ<br>|
|EAS(tested)<br>~~—~~|Single Pulse Avalanche EnergyTested Value<br>|420<br>||
|IAR<br>~~sf~~|Avalanche Current<br>~~sf~~|See Fig.15,16, 12a, 12b<br>~~sf~~|A<br>~~sf~~|
|EAR<br>~~sf~~|Repetitive Avalanche Energy <br>~~sf~~||mJ<br>~~sf~~|
|TJ<br>TSTG<br>~~a a~~|Operating Junction and<br>Storage Temperature Range<br>~~a~~|-55  to + 175|°C|
|~~a a~~|SolderingTemperature,for 10 seconds(1.6mm from case)<br>~~a~~|300||



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**Static @ TJ = 25°C (unless otherwise specified)** 

|Qg<br>~~e~~~~**s**~~|Total Gate Charge|–––|120|180|nC<br>~~Pf~~|ID= 75A<br>VDS= 44V<br>VGS= 10V<br>~~Pf~~|
|---|---|---|---|---|---|---|
|g<br>Qgs<br>~~e~~~~**s**~~<br>~~R~~|Gate-to-Source Charge|–––|31|–––|||
|Qgd<br>~~e~~~~**s**~~<br>~~R~~<br>~~Rs~~|Gate-to-Drain Charge|–––|46|–––|||
|gd<br>td(on)<br>~~R~~<br>~~Rs~~|Turn-On Delay Time|–––|18|–––|ns|VDD= 25V<br>ID= 75A<br>RG= 4.4<br>VGS= 10V|
|d(on)<br>tr<br>~~Rs~~<br>~~es~~|RiseTime|–––|110|–––|||
|td(off)<br>~~es~~<br>~~es~~|Turn-Off DelayTime<br>|–––<br>|48<br>|–––<br>|||
|d(off)<br>tf<br>~~es~~<br>~~es~~|Fall Time<br>|–––<br>|82<br>|–––<br>|||
|LD<br>~~es+},~~|Internal Drain Inductance<br>~~+},~~|–––<br>~~+},~~|4.5<br>~~+},~~|–––<br>~~+},~~|nH<br>)|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>&<br>~~ee~~|
|LS<br>~~+},~~<br>~~es~~|Internal Source Inductance<br>~~+},~~|–––<br>~~+},~~|7.5<br>~~+},~~|–––<br>~~+},~~|||
|Ciss<br>~~es~~<br>~~**es**~~|Input Capacitance|–––|4780|–––|pF<br>~~;~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz<br>~~ee~~<br>~~PO~~|
|Coss<br>~~es~~<br>~~**es**~~|Output Capacitance|–––|770|–––|||
|Crss<br>~~es~~<br>~~**es**~~<br>~~es~~|ReverseTransferCapacitance|–––|410|–––|||
|Coss<br>~~es~~<br>~~**es**~~<br>~~es~~<br>~~es~~|Output Capacitance|–––|2730|–––||VGS=0V,VDS= 1.0Vƒ= 1.0MHz<br>~~ee~~<br>~~PO~~<br>~~Po~~|
|Coss<br>~~**es**~~<br>~~es~~<br>~~es~~|Output Capacitance|–––|600|–––||VGS =0V, VDS =44V ƒ=1.0MHz<br>~~PO~~<br>~~Po~~<br>~~ee~~|
|Coss eff.<br>~~**es**~~<br>~~es~~|Effective Output Capacitance|–––|910|–––||VGS=0V,VDS=0Vto44V<br>~~Po~~<br>~~ee~~|
|**Diode Characteristics**<br>~~**es**~~<br>~~;~~<br>~~ee~~<br>~~po~~|||||||
|~~po4,~~|**Parameter **<br>~~4,~~|**Min.**<br>~~4,~~|**Typ. M**<br>~~4,~~|**. Max.**<br>~~4,~~|**Units**<br>~~},~~|**Conditions**<br>~~},~~<br>~~&~~|
|IS<br>~~po4,~~|Continuous Source Current<br>(Body Diode)<br>~~4,~~|–––<br>~~4,~~|–––<br>~~4,~~|75<br>~~4,~~|A<br>~~},~~<br>~~DR~~<br>~~S(O~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>~~},~~<br>~~&~~<br>~~DR~~|
|ISM<br>~~4,~~<br>~~es~~|Pulsed Source Current<br>(Body Diode)<br>~~4,~~<br>~~DR~~|–––<br>~~4,~~<br>~~DR~~|–––<br>~~4,~~<br>~~DR~~|600<br>~~4,~~<br>~~DR~~<br>~~S(O~~|||
|VSD<br>~~4,~~<br>~~es~~|Diode Forward Voltage<br>~~4,~~<br>~~DR~~|–––<br>~~4,~~<br>~~DR~~|–––<br>~~4,~~<br>~~DR~~|1.3<br>~~4, ~~<br>~~DR~~<br>~~S(O~~|V<br> ~~},~~<br>~~DR~~<br>~~S(O~~|TJ =25°C,IS=75A,VGS =0V<br>~~},~~<br>~~&~~<br>~~DR~~|
|trr<br>~~es~~<br>~~eee~~|Reverse Recovery Time<br>~~DR~~<br>~~eee~~|–––<br>~~DR~~<br>~~eee~~|30<br>~~DR~~<br>~~eee~~|46<br>~~DR~~<br>~~S(O~~<br>~~eee~~|ns<br>~~DR~~<br>~~S(O~~<br>~~eee~~|TJ= 25°C ,IF= 75A, VDD= 25V<br>nC   di/dt = 100A/µs<br>~~DR~~<br>~~eee~~<br>~~Df~~|
|Qrr<br>~~eee~~<br>~~es~~|Reverse RecoveryCharge<br>~~eee~~<br>~~Df~~|–––<br>~~eee~~<br>~~Df~~|30<br>~~eee~~<br>~~Df~~|45<br>~~eee~~<br>~~Df~~|nC   di/dt = 100A/<br>~~eee~~<br>~~Df~~||
|ton<br>~~es~~|Forward Turn-On Time<br>~~Df~~|Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>~~Df~~|||||



## **Notes:** 

>  Repetitive rating;  pulse width limited by max. junction temperature. (See fig. 11) 

-  Limited by TJmax, starting  TJ = 25°C, L = 0.10mH, RG = 25, IAS = 75A, VGS =10V. Part not recommended for use above this value.  Pulse width 1.0ms; duty cycle  2%. 

-  Coss eff.  is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

-   Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. 

-  This value determined from sample failure population, starting TJ = 25°C, L = 0.10mH, RG = 25, IAS = 75A, VGS =10V. 

-  This is applied to D[2] Pak When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 

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1000<br>VGS<br>TOP           15V Pu<br>10V<br>8.0V<br>7.0V<br>6.0V<br>5.5V<br>100 5.0V rial<br>BOTTOM 4.5V<br>10 ACI 4.5V<br>20µs PULSE WIDTH<br>Tj = 25°C<br>1 Filvill<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig. 1** Typical Output Characteristics 

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1000<br>TJ = 150°C<br>100<br>4<br>TJ = 25°C<br>10<br>V DS  = 25V<br>20µs PULSE WIDTH<br>1<br>4 6 8 10 12<br>VGS, Gate-to-Source Voltage (V)<br>)<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig. 3** Typical Transfer Characteristics 

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1000<br>VGS<br>TOP           15V<br>10V |<br>8.0V<br>7.0V<br>6.0V<br>5.5V<br>100 5.0V fa<br>BOTTOM 4.5V<br>4.5V<br>10<br>YW<br>20µs PULSE WIDTH<br>Tj = 175°C<br>1 ZeeBi<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig. 2** Typical Output Characteristics 

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200<br>175 Pt Et<br>150<br>TJ = 25°C<br>125 ie ae<br>100<br>TJ = 175°C<br>4<br>75<br>50 MITi | tt<br>25<br>AGREE<br>0<br>0 25 50 75 100 125 150 175 200<br>ID,Drain-to-Source Current (A)<br>Gfs, Forward Transconductance (S)<br>**----- End of picture text -----**<br>


**Fig. 4** Typical Forward Trans conductance vs. Drain Current 

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100000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss    = C gs + Cgd,  C ds SHORTED<br>C rss    = C gd<br>Coss   = Cds + Cgd<br>10000 ce<br>ee<br>Ciss<br>1000 lL Coss IT<br>Crss<br>Bill Hi<br>100 Lill aii<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

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1000.00<br>100.00 TJ = 175 ° C<br>10.00<br>1.00 T J  = 25°C<br>V GS  = 0V<br>fp<br>0.10 Lica<br>0.0 0.5 1.0 1.5 2.0 2.5<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig. 7** Typical Source-to-Drain Diode 

Forward Voltage 

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12.0<br>ID= 75A<br>10.0 VDS= 44V<br>VDS= 28V<br>8.0 tT,<br>an Se<br>6.0<br>4.0 TV<br>2.0<br>0.0 ALZane<br>0 20 40 60 80 100 120<br> QG  Total Gate Charge (nC)<br>Fig 6.  Typical Gate Charge vs.<br>      Gate-to-Source Voltage<br>10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>1000<br>100<br>100µsec<br>10<br>Tc = 25°C<br>Tj = 175°C 1msec<br>Single Pulse<br>sie 10msec<br>1 |<br>1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>VGS, Gate-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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150<br>125<br>ST<br>100<br>HPN<br>75<br>CINE<br>50<br>CONCH<br>25<br>EEETEEN<br>0<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


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2.5<br>ID = 75A<br>V GS  = 10V<br>2.0 TTL<br>1.5 TTT<br>Wt<br>1.0 TET<br>LerTh THT<br>0.5<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current vs. Case Temperature 

**Fig 10.** Normalized On-Resistance vs. Temperature 

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1<br>D = 0.50<br>WE ETN FF<br>0.20<br>0.1<br>0.10<br>apis al ly Bl il<br>0.05 oeral<br>0.02<br>0.01<br>0.01<br>SINGLE PULSE<br>( THERMAL RESPONSE )<br>Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001 EAN od od of of<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z  thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>L DRIVER<br>VDS<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V<br>ys tp 0.01<br>weat |<br>Fig 12a.   Unclamped Inductive Test Circuit<br>1<br>V(BR)DSS<br>tp<br>.<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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**----- Start of picture text -----**<br>
IAS<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

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**----- Start of picture text -----**<br>
Id<br>Vds<br>Vgs<br>Vgs(th)<br>fre<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 13a.** Gate Charge Waveform 

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500<br>ID<br>TOP         31A<br>400 53A<br>BOTTOM 75A<br>300<br>Naa<br>SNNEEL<br>200<br>NN<br>100<br>PN<br>oS<br>0<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>Fig 12c.  Maximum Avalanche Energy<br> vs. Drain Current<br>4.0<br>3.5<br>3.0 ESUHHEEREEE<br>LEANE<br>ID = 250µA<br>2.5<br>PNG<br>2.0 ELEN<br>1.5<br>1.0<br>CACECEEEEE<br>-75 -50 -25 0 25 50 75 100 125 150 175 200<br>TJ , Temperature ( °C )<br>EAS , Single Pulse Avalanche Energy (mJ)<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 14.** Threshold Voltage vs. Temperature 

**Fig 13b.** Gate Charge Test Circuit 

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10000<br>Duty Cycle = Single Pulse<br>1000 Allowed avalanche Current vs<br>avalanche  pulsewidth,  tav<br>assuming  Tj = 25°C due to<br>avalanche losses<br>100 i 0.01<br>0.05<br>10 0.10<br>1 A)<br>1.0E-08 1.0E-07 1.0E-06 A 1.0E-05 EPPS 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 15.** Typical Avalanche Current vs. Pulse width 

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300<br>TOP          Single Pulse<br>BOTTOM   10% Duty Cycle<br>250 I D  = 75A<br>wT...<br>200<br>PN eee<br>150<br>INTETT<br>100<br>TENET<br>50<br>CUNT<br>LETT TPN<br>0<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.infineon.com)** 

1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 

3.  Equation below based on circuit and waveforms shown in Figures 12a, 12b. 

4.  PD (ave) = Average power dissipation per single avalanche pulse. 

5.  BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

6.  Iav = Allowable avalanche current. 

7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). 

   - tav = Average time in avalanche. 

   - D = Duty cycle in avalanche =  tav ·f 

   - ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =**  **T/ ZthJC Iav = 2**  **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

**Fig 16.** Maximum Avalanche Energy vs. Temperature 

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AUIRF1405ZS/L ~~p~~ 

**Fig 17.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs 

**Fig 18a.** Switching Time Test Circuit 

**Fig 18b.** Switching Time Waveforms 

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**D[2] Pak (TO-263AB) Package Outline** (Dimensions are shown in millimeters (inches)) 

## **D[2] Pak (TO-263AB) Part Marking Information** 

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Part Number  AUIRF1405ZS<br>Date Code<br>IR Logo  I éaR YWWA  Y= Year<br>WW= Work Week<br><br>XX         XX<br>a<br>Lot Code<br>**----- End of picture text -----**<br>


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## **TO-262 Package Outline** (Dimensions are shown in millimeters (inches) 

## **TO-262 Part Marking Information** 

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Part Number  AUIRF1405ZL<br>Date Code<br>IR Logo  I GOR YWWA  Y= Year<br>WW= Work Week<br><br>XX         XX<br>——<br>Lot Code<br>**----- End of picture text -----**<br>


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## **D[2] Pak (TO-263AB) Tape & Reel Information** (Dimensions are shown in millimeters (inches)) 

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TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)<br>3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>**----- End of picture text -----**<br>


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13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418.<br>26.40 (1.039) 4<br>2.   CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)<br>3.   DIMENSION MEASURED @ HUB.<br>3<br>**----- End of picture text -----**<br>


4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 

11 2015-11-11 ~~TT~~ 

AUIRF1405ZS/L ~~es »8»}==§»™vvcrcrc~~ **Qualification Information** 

|**Qualification Information**|**Qualification Information**|||
|---|---|---|---|
|**Qualification Level**||Automotive<br>(per AEC-Q101)||
|||Comments: This part number(s) passed Automotive qualification. Infineon’s<br>Industrial and Consumer qualification level is granted by extension of the higher<br>Automotive level.||
|**Moisture Sensitivity Level**||TO-262|MSL1|
|||D2-Pak||
|**ESD**|Machine Model|Class M4 (+/-425)† <br>AEC-Q101-002||
||Human Body Model|Class H1C (+/-2000V)†<br>AEC-Q101-001||
||Charged Device Model|Class C5 (+/-1125V)† <br>AEC-Q101-005||
|**RoHS Compliant**||Yes||



- Highest passing voltage. 

## **Revision History** 

|**Date**|||**Comments**|
|---|---|---|---|
|11/11/2015||Updated datasheet with corporate template||
|||Corrected ordering table onpage1.||



**Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved.** 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

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2015-11-11 



## Links

- [View this product on Novapart](https://novapart.co/products/AUIRF1405ZS/power-mosfet-n-channel-55-v-150-a-00037-ohm-to-263)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/auirf1405zs/mosfet-n-ch-sch-diode-55v-150a/dp/1857358)
---

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